Abstract

Simple approximate relations are given for the reflectance of a weakly absorbing dielectric layer deposited as a quarter wave or a half-wave upon transparent and metallic substrates. These approximated relations are used in the infrared to calculate the optical constants n and k and the inhomogeneity ∂n of the index n of a material deposited as a thin film. A high degree of accuracy is sought for k. Two examples are given for ZnS and ThF4 in the 3–11-μm spectral range.

© 1992 Optical Society of America

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Analytical method of determining optical constants of a weakly absorbing thin film

Yanfei Zheng and Kazuo Kikuchi
Appl. Opt. 36(25) 6325-6328 (1997)

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