Abstract

Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have been extensively investigated as potential replacements for current polar c-plane LEDs. High-power and low-efficiency-droop blue LEDs have been demonstrated on nonpolar and semipolar planes III-nitride due to the advantages of eliminated or reduced polarization-related electric field and homoepitaxial growth. Semipolar (202¯1) and (202¯1¯) LEDs have contributed to bridging “green gap” (low efficiency in green spectral region) by incorporating high indium compositions, reducing polarization effects, and suppressing defects. Other properties, such as low thermal droop, narrow spectral linewidth, small wavelength shift, and polarized emission, have also been reported for nonpolar and semipolar LEDs. In this paper we review the theoretical background, device performance, material properties, and physical mechanisms for nonpolar and semipolar III-nitride semiconductors and associated blue and green LEDs. The latest progress on topics including efficiency droop, thermal droop, green-gap, and three-dimensional nanostructures is detailed. Future challenges, potential solutions, and applications will also be covered.

© 2018 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

Hongjian Li, Matthew S. Wong, Michel Khoury, Bastien Bonef, Haojun Zhang, YiChao Chow, Panpan Li, Jared Kearns, Aidan A. Taylor, Philippe De Mierry, Zainuriah Hassan, Shuji Nakamura, and Steven P. DenBaars
Opt. Express 27(17) 24154-24160 (2019)

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

Serdal Okur, Mohsen Nami, Ashwin K. Rishinaramangalam, Sang H. Oh, Steve P. DenBaars, Sheng Liu, Igal Brener, and Daniel F. Feezell
Opt. Express 25(3) 2178-2186 (2017)

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Hongping Zhao, Guangyu Liu, Jing Zhang, Jonathan D. Poplawsky, Volkmar Dierolf, and Nelson Tansu
Opt. Express 19(S4) A991-A1007 (2011)

References

  • View by:
  • |
  • |
  • |

  1. S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, 2000).
  2. S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
    [Crossref]
  3. V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, “Effects of macroscopic polarization in III–V nitride multiple quantum wells,” Phys. Rev. B 60, 8849–8858 (1999).
    [Crossref]
  4. P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
    [Crossref]
  5. M. B. Mclaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, “Basal plane stacking-fault related anisotropy in x-ray rocking curve widths of m-plane GaN,” Jpn. J. Appl. Phys. 47, 5429–5431 (2008).
    [Crossref]
  6. F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
    [Crossref]
  7. M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
    [Crossref]
  8. K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
    [Crossref]
  9. R. M. Farrell, E. C. Yong, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27, 024001 (2012).
    [Crossref]
  10. K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
    [Crossref]
  11. K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
    [Crossref]
  12. M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
    [Crossref]
  13. Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
    [Crossref]
  14. Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
    [Crossref]
  15. C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
    [Crossref]
  16. D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
    [Crossref]
  17. C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
    [Crossref]
  18. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
    [Crossref]
  19. J. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photon. Rev. 7, 408–421 (2013).
    [Crossref]
  20. C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
    [Crossref]
  21. J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electricali: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110, 177406 (2013).
    [Crossref]
  22. J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi A 207, 2217–2225 (2010).
    [Crossref]
  23. D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
    [Crossref]
  24. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
    [Crossref]
  25. Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
    [Crossref]
  26. Y. Zhao, R. M. Farrell, Y. R. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53, 100206 (2014).
    [Crossref]
  27. A. Romanov, T. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).
    [Crossref]
  28. V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov, and Yu. N. Makarov, “Modelling study of MQW LED operation,” Phys. Status Solidi C 2, 2928–2931 (2005).
    [Crossref]
  29. H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications,” J. Appl. Phys. 119, 174502 (2016).
    [Crossref]
  30. H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well,” J. Appl. Phys. 121, 014501 (2017).
    [Crossref]
  31. T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, “A GaN bulk crystal with improved structural quality grown by the ammonothermal method,” Nat. Mater. 6, 568–571 (2007).
    [Crossref]
  32. F. Scholz, “Semipolar GaN grown on foreign substrates: a review,” Semicond. Sci. Technol. 27, 024002 (2012).
    [Crossref]
  33. X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
    [Crossref]
  34. B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, “Improved quality (110) a-plane GaN with sidewall lateral epitaxial overgrowth,” Appl. Phys. Lett. 88, 061908 (2006).
    [Crossref]
  35. T. Wang, “Topical review: development of overgrown semipolar GaN for high efficiency green/yellow emission,” Semicond. Sci. Technol. 31, 093003 (2016).
    [Crossref]
  36. T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl, “Semipolar GaN grown on m-plane sapphire using MOVPE,” Phys. Status Solidi C 5, 1815–1817 (2008).
    [Crossref]
  37. N. Okada and K. Tadatomo, “Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates,” Semicond. Sci. Technol. 27, 024003 (2012).
    [Crossref]
  38. N. Okada, A. Kurisu, K. Murakami, and K. Tadatomo, “Growth of semipolar (112) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate,” Appl. Phys. Express 2, 091001 (2009).
    [Crossref]
  39. N. Okada, H. Oshita, A. Kurisu, and K. Tadatomo, “Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates,” Jpn. J. Appl. Phys. 50, 035602 (2011).
    [Crossref]
  40. B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
    [Crossref]
  41. N. Okada, H. Oshita, K. Yamane, and K. Tadatomo, “High-quality {201} GaN layers on patterned sapphire substrate with wide-terrace,” Appl. Phys. Lett. 99, 242103 (2011).
    [Crossref]
  42. T. Meisch, M. Alimoradi-Jazi, M. Klein, and F. Scholz, “(201) MOVPE and HVPE GaN grown on 2 inch patterned sapphire substrates,” Phys. Status Solidi C 11, 537–540 (2014).
    [Crossref]
  43. B. Leung, D. Wang, Y. S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi B 253, 23–35 (2016).
    [Crossref]
  44. B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
    [Crossref]
  45. A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
    [Crossref]
  46. R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
    [Crossref]
  47. R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
    [Crossref]
  48. A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
    [Crossref]
  49. D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
    [Crossref]
  50. D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. B 30, 041513 (2012).
    [Crossref]
  51. A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
    [Crossref]
  52. E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.
  53. Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
    [Crossref]
  54. K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
    [Crossref]
  55. A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
    [Crossref]
  56. K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
    [Crossref]
  57. Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
    [Crossref]
  58. H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
    [Crossref]
  59. D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
    [Crossref]
  60. H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
    [Crossref]
  61. A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
    [Crossref]
  62. Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
    [Crossref]
  63. J. W. Matthews and A. E. Blakeslee, “Defects in epitaxial multilayers,” J. Cryst. Growth 27, 118–125 (1974).
    [Crossref]
  64. J. P. Hirth and J. Lothe, “The influence of lattice periodicity,” in Theory of Dislocations (Wiley, 1982), Chap. 8, pp. 231–278.
  65. P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
    [Crossref]
  66. H. Y. Ryu, D. S. Shin, and J. I. Shim, “Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material,” Appl. Phys. Lett. 100, 131109 (2012).
    [Crossref]
  67. J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degrees of carrier localization,” Appl. Phys. Lett. 97, 201112 (2010).
    [Crossref]
  68. A. David and M. J. Grundmann, “Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis,” Appl. Phys. Lett. 96, 103504 (2010).
    [Crossref]
  69. H. Fu, Z. Lu, X. Zhao, Y. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20) InGaN light-emitting diodes by time-resolved photoluminescence,” J. Disp. Technol. 12, 736–741 (2016).
    [Crossref]
  70. H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6, 065013 (2016).
    [Crossref]
  71. E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indriect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98, 161107 (2011).
    [Crossref]
  72. Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
    [Crossref]
  73. M. Meneghini, N. Trivellin, G. Meneghesso, and E. Zanoni, “A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes,” J. Appl. Phys. 106, 114508 (2009).
    [Crossref]
  74. A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based light emitters,” IEEE Trans. Electron Devices 57, 79–87 (2010).
    [Crossref]
  75. F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97, 231118 (2010).
    [Crossref]
  76. J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
    [Crossref]
  77. K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94, 191109 (2009).
    [Crossref]
  78. G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
    [Crossref]
  79. Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
    [Crossref]
  80. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
    [Crossref]
  81. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
    [Crossref]
  82. S. Nakamura and M. R. Krames, “History of Gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
    [Crossref]
  83. J. Hader, J. V. Moloney, and S. W. Koch, “Beyond the ABC: carrier recombinations in semiconductor lasers,” Proc. SPIE 6115, 61151T (2006).
    [Crossref]
  84. Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
    [Crossref]
  85. M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Y. Evstratov, and S. Y. Karpov, “Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity,” Appl. Phys. Lett. 97, 051904 (2010).
    [Crossref]
  86. P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
    [Crossref]
  87. S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
    [Crossref]
  88. Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
    [Crossref]
  89. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
    [Crossref]
  90. A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
    [Crossref]
  91. C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
    [Crossref]
  92. S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
    [Crossref]
  93. Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
    [Crossref]
  94. R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11, 628–631 (2014).
    [Crossref]
  95. J. I. Hwang, R. Hashimoto, S. Saito, and S. Nunoue, “Development of InGaN-based red LED grown on (0001) polar surface,” Appl. Phys. Express 7, 071003 (2014).
    [Crossref]
  96. D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emittiing at 530–590  nm with AlGaN interlayers,” J. Cryst. Growth 415, 57–64 (2015).
    [Crossref]
  97. M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
    [Crossref]
  98. F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
    [Crossref]
  99. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
    [Crossref]
  100. Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
    [Crossref]
  101. H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
    [Crossref]
  102. S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
    [Crossref]
  103. Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
    [Crossref]
  104. K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
    [Crossref]
  105. H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
    [Crossref]
  106. E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
    [Crossref]
  107. A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
    [Crossref]
  108. S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6, 1808–1811 (2006).
    [Crossref]
  109. Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23, 465601 (2012).
    [Crossref]
  110. S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys. 111, 071101 (2012).
    [Crossref]
  111. C. H. Liao, W. M. Chang, H. S. Chen, C. Y. Chen, Y. F. Yao, H. T. Chen, C. Y. Su, S. Y. Ting, Y. W. Kiang, and C. C. Yang, “Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod,” Opt. Express 20, 15859–15871 (2012).
    [Crossref]
  112. C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
    [Crossref]
  113. Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
    [Crossref]
  114. Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19, 25528–25534 (2011).
    [Crossref]
  115. Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
    [Crossref]
  116. M. R. Zhang, Q. M. Jiang, S. H. Zhang, Z. G. Wang, F. Hou, and G. B. Pan, “Fabrication of gallium nitride nanowires by metal-assisted photochemical etching,” Appl. Surf. Sci. 422, 216–220 (2017).
    [Crossref]
  117. S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
    [Crossref]
  118. T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
    [Crossref]
  119. S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, “Threading defect elimination in GaN nanowires,” J. Mater. Res. 26, 2293–2298 (2011).
    [Crossref]
  120. L. Chen, A. Yin, J. S. Im, A. V. Nurmikko, J. M. Xu, and J. Han, “Fabrication of 50–100  nm patterned InGaN blue light emitting heterostructures,” Phys. Status Solidi A 188, 135–138 (2001).
    [Crossref]
  121. H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
    [Crossref]
  122. S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
    [Crossref]
  123. C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16, 10549–10556 (2008).
    [Crossref]
  124. J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
    [Crossref]
  125. J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
    [Crossref]
  126. C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
    [Crossref]
  127. C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
    [Crossref]
  128. J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
    [Crossref]
  129. J. J. Wierer, Q. M. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, “III-nitride core-shell nanowire arrayed solar cells,” Nanotechnology 23, 194007 (2012).
    [Crossref]
  130. M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
    [Crossref]
  131. C. H. Liao, W. M. Chang, Y. F. Yao, H. T. Chen, C. Y. Su, C. Y. Chen, C. Hsieh, H. S. Chen, C. G. Tu, Y. W. Kiang, C. C. Yang, and T. C. Hsu, “Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays,” J. Appl. Phys. 113, 054315 (2013).
    [Crossref]
  132. C. H. Liao, C. G. Tu, W. M. Chang, C. Y. Su, P. Y. Shih, H. T. Chen, Y. F. Yao, C. Hsieh, H. S. Chen, C. H. Lin, C. K. Yu, Y. W. Kiang, and C. C. Yang, “Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition,” Opt. Express 22, 17303–17319 (2014).
    [Crossref]
  133. J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
    [Crossref]
  134. C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
    [Crossref]
  135. S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
    [Crossref]
  136. T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
    [Crossref]
  137. C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
    [Crossref]
  138. X. Zhang, C.-G. Tu, Y.-W. Kiang, and C. Yang, “Structure variation of a sidewall quantum well on a GaN nanorod,” Nanotechnology 28, 045203 (2017).
    [Crossref]
  139. E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
    [Crossref]
  140. B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
    [Crossref]
  141. G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs,” Phys. Status Solidi A 211, 748–751 (2014).
    [Crossref]
  142. Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
    [Crossref]
  143. M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
    [Crossref]
  144. C. G. Tu, C. H. Liao, Y. F. Yao, H. S. Chen, C. H. Lin, C. Y. Su, P. Y. Shih, W. H. Chen, E. Zhu, Y. W. Kiang, and C. C. Yang, “Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array,” Opt. Express 22, A1799–A1809 (2014).
    [Crossref]
  145. T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
    [Crossref]
  146. C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
    [Crossref]
  147. S. P. Chang, K. P. Sou, C. H. Chen, Y. J. Cheng, J. K. Huang, C. H. Lin, H. C. Kuo, C. Y. Chang, and W. F. Hsieh, “Lasing action in gallium nitride quasicrystal nanorod arrays,” Opt. Express 20, 12457–12462 (2012).
    [Crossref]
  148. J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
    [Crossref]
  149. Y. Nakajima, Y. Lin, and P. D. Dapkus, “Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs,” Phys. Status Solidi A 213, 2452–2460 (2016).
    [Crossref]
  150. T. W. Yeh, Y. T. Lin, B. Ahn, L. S. Stewart, D. P. Dapkus, and S. R. Nutt, “Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets,” Appl. Phys. Lett. 100, 033119 (2012).
    [Crossref]
  151. A. K. Rishinaramangalam, M. N. Fairchild, S. M. U. Masabih, D. M. Shima, G. Balakrishnan, and D. F. Feezell, “In selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes,” in Conference on Lasers and Electro-Optics (CLEO) (2014).
  152. T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
    [Crossref]
  153. T. Kuykendall, P. Pauzauskie, S. K. Lee, Y. F. Zhang, J. Goldberger, and P. D. Yang, “Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections,” Nano Lett. 3, 1063–1066 (2003).
    [Crossref]
  154. Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Adv. Mater. 21, 2416–2420 (2009).
    [Crossref]
  155. K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
    [Crossref]
  156. Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
    [Crossref]
  157. F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5, 2287–2291 (2005).
    [Crossref]
  158. F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
    [Crossref]
  159. Q. M. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10, 1554–1558 (2010).
    [Crossref]
  160. A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92, 093105 (2008).
    [Crossref]
  161. A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
    [Crossref]
  162. A. Armstrong, G. T. Wang, and A. A. Talin, “Depletion-mode photoconductivity study of deep levels in GaN nanowires,” J. Electron. Mater. 38, 484–489 (2009).
    [Crossref]
  163. Q. Li and G. T. Wang, “Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films,” Appl. Phys. Lett. 93, 043119 (2008).
    [Crossref]
  164. Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
    [Crossref]
  165. Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
    [Crossref]
  166. Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
    [Crossref]
  167. S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth,” Electrochem. Solid-State Lett. 15, H47–H50 (2011).
    [Crossref]
  168. C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
    [Crossref]
  169. I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
    [Crossref]
  170. J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
    [Crossref]
  171. B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
    [Crossref]
  172. S. P. Chang, J. R. Chang, K. P. Sou, M. C. Liu, Y. J. Cheng, H. C. Kuo, and C. Y. Chang, “Electrically driven green, olivine, and amber color nanopyramid light emitting diodes,” Opt. Express 21, 23030–23035 (2013).
    [Crossref]
  173. T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
    [Crossref]
  174. K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
    [Crossref]
  175. A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
    [Crossref]
  176. S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
    [Crossref]
  177. S. H. Lim, Y. H. Ko, C. Rodriguez, S. H. Gong, and Y. H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light Sci. Appl. 5, e16030 (2016).
    [Crossref]
  178. F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
    [Crossref]
  179. T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
    [Crossref]
  180. P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
    [Crossref]
  181. H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103, 014908 (2008).
    [Crossref]
  182. W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
    [Crossref]
  183. R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
    [Crossref]
  184. Y. Nakajima and P. D. Dapkus, “The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures,” Appl. Phys. Lett. 109, 083101 (2016).
    [Crossref]
  185. M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
    [Crossref]
  186. S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
    [Crossref]
  187. C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
    [Crossref]
  188. C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
    [Crossref]
  189. H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24, A856–A867 (2016).
    [Crossref]
  190. H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photon. J. 9, 8200828 (2017).
    [Crossref]
  191. S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
    [Crossref]
  192. J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
    [Crossref]
  193. Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
    [Crossref]
  194. H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
    [Crossref]
  195. A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
    [Crossref]
  196. R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
    [Crossref]
  197. C. Shen, C. Lee, T. K. Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. EI-Desouki, and B. S. Ooi, “High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth,” Opt. Express 24, 20281–20286 (2016).
    [Crossref]
  198. D. V. Dinh, Z. Quan, B. Roycroft, P. J. Parbrook, and B. Corbett, “GHz bandwidth semipolar (112) InGaN/GaN light-emitting diodes,” Opt. Lett. 41, 5752–5755 (2016).
    [Crossref]
  199. H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).
    [Crossref]
  200. D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
    [Crossref]
  201. H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
    [Crossref]
  202. H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763–766 (2017).
    [Crossref]
  203. X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
    [Crossref]
  204. H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758–31773 (2017).
    [Crossref]
  205. Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).
  206. Y. J. Lee, Z. P. Yang, P. G. Chen, Y. A. Hsieh, Y. C. Yao, M. H. Liao, M. H. Lee, M. T. Wand, and J. M. Hwang, “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors,” Opt. Express 22, A1589–A1595 (2014).
    [Crossref]
  207. Z. Liu, J. Ma, T. Huang, C. Liu, and K. M. Lau, “Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors,” Appl. Phys. Lett. 104, 091103 (2014).
    [Crossref]

2017 (15)

H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well,” J. Appl. Phys. 121, 014501 (2017).
[Crossref]

M. R. Zhang, Q. M. Jiang, S. H. Zhang, Z. G. Wang, F. Hou, and G. B. Pan, “Fabrication of gallium nitride nanowires by metal-assisted photochemical etching,” Appl. Surf. Sci. 422, 216–220 (2017).
[Crossref]

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
[Crossref]

X. Zhang, C.-G. Tu, Y.-W. Kiang, and C. Yang, “Structure variation of a sidewall quantum well on a GaN nanorod,” Nanotechnology 28, 045203 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photon. J. 9, 8200828 (2017).
[Crossref]

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).
[Crossref]

H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763–766 (2017).
[Crossref]

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758–31773 (2017).
[Crossref]

2016 (25)

H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24, A856–A867 (2016).
[Crossref]

C. Shen, C. Lee, T. K. Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. EI-Desouki, and B. S. Ooi, “High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth,” Opt. Express 24, 20281–20286 (2016).
[Crossref]

D. V. Dinh, Z. Quan, B. Roycroft, P. J. Parbrook, and B. Corbett, “GHz bandwidth semipolar (112) InGaN/GaN light-emitting diodes,” Opt. Lett. 41, 5752–5755 (2016).
[Crossref]

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

S. H. Lim, Y. H. Ko, C. Rodriguez, S. H. Gong, and Y. H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light Sci. Appl. 5, e16030 (2016).
[Crossref]

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Y. Nakajima and P. D. Dapkus, “The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures,” Appl. Phys. Lett. 109, 083101 (2016).
[Crossref]

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Y. Nakajima, Y. Lin, and P. D. Dapkus, “Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs,” Phys. Status Solidi A 213, 2452–2460 (2016).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

T. Wang, “Topical review: development of overgrown semipolar GaN for high efficiency green/yellow emission,” Semicond. Sci. Technol. 31, 093003 (2016).
[Crossref]

H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications,” J. Appl. Phys. 119, 174502 (2016).
[Crossref]

B. Leung, D. Wang, Y. S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi B 253, 23–35 (2016).
[Crossref]

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

H. Fu, Z. Lu, X. Zhao, Y. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20) InGaN light-emitting diodes by time-resolved photoluminescence,” J. Disp. Technol. 12, 736–741 (2016).
[Crossref]

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6, 065013 (2016).
[Crossref]

2015 (10)

C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
[Crossref]

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
[Crossref]

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emittiing at 530–590  nm with AlGaN interlayers,” J. Cryst. Growth 415, 57–64 (2015).
[Crossref]

K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
[Crossref]

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

2014 (16)

G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs,” Phys. Status Solidi A 211, 748–751 (2014).
[Crossref]

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Z. Liu, J. Ma, T. Huang, C. Liu, and K. M. Lau, “Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors,” Appl. Phys. Lett. 104, 091103 (2014).
[Crossref]

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

C. H. Liao, C. G. Tu, W. M. Chang, C. Y. Su, P. Y. Shih, H. T. Chen, Y. F. Yao, C. Hsieh, H. S. Chen, C. H. Lin, C. K. Yu, Y. W. Kiang, and C. C. Yang, “Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition,” Opt. Express 22, 17303–17319 (2014).
[Crossref]

Y. J. Lee, Z. P. Yang, P. G. Chen, Y. A. Hsieh, Y. C. Yao, M. H. Liao, M. H. Lee, M. T. Wand, and J. M. Hwang, “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors,” Opt. Express 22, A1589–A1595 (2014).
[Crossref]

C. G. Tu, C. H. Liao, Y. F. Yao, H. S. Chen, C. H. Lin, C. Y. Su, P. Y. Shih, W. H. Chen, E. Zhu, Y. W. Kiang, and C. C. Yang, “Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array,” Opt. Express 22, A1799–A1809 (2014).
[Crossref]

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11, 628–631 (2014).
[Crossref]

J. I. Hwang, R. Hashimoto, S. Saito, and S. Nunoue, “Development of InGaN-based red LED grown on (0001) polar surface,” Appl. Phys. Express 7, 071003 (2014).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

Y. Zhao, R. M. Farrell, Y. R. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53, 100206 (2014).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
[Crossref]

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

T. Meisch, M. Alimoradi-Jazi, M. Klein, and F. Scholz, “(201) MOVPE and HVPE GaN grown on 2 inch patterned sapphire substrates,” Phys. Status Solidi C 11, 537–540 (2014).
[Crossref]

2013 (16)

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
[Crossref]

J. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photon. Rev. 7, 408–421 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electricali: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110, 177406 (2013).
[Crossref]

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

C. H. Liao, W. M. Chang, Y. F. Yao, H. T. Chen, C. Y. Su, C. Y. Chen, C. Hsieh, H. S. Chen, C. G. Tu, Y. W. Kiang, C. C. Yang, and T. C. Hsu, “Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays,” J. Appl. Phys. 113, 054315 (2013).
[Crossref]

S. Nakamura and M. R. Krames, “History of Gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
[Crossref]

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
[Crossref]

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).

S. P. Chang, J. R. Chang, K. P. Sou, M. C. Liu, Y. J. Cheng, H. C. Kuo, and C. Y. Chang, “Electrically driven green, olivine, and amber color nanopyramid light emitting diodes,” Opt. Express 21, 23030–23035 (2013).
[Crossref]

C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
[Crossref]

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
[Crossref]

2012 (23)

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

S. P. Chang, K. P. Sou, C. H. Chen, Y. J. Cheng, J. K. Huang, C. H. Lin, H. C. Kuo, C. Y. Chang, and W. F. Hsieh, “Lasing action in gallium nitride quasicrystal nanorod arrays,” Opt. Express 20, 12457–12462 (2012).
[Crossref]

C. H. Liao, W. M. Chang, H. S. Chen, C. Y. Chen, Y. F. Yao, H. T. Chen, C. Y. Su, S. Y. Ting, Y. W. Kiang, and C. C. Yang, “Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod,” Opt. Express 20, 15859–15871 (2012).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23, 465601 (2012).
[Crossref]

S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys. 111, 071101 (2012).
[Crossref]

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

J. J. Wierer, Q. M. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, “III-nitride core-shell nanowire arrayed solar cells,” Nanotechnology 23, 194007 (2012).
[Crossref]

T. W. Yeh, Y. T. Lin, B. Ahn, L. S. Stewart, D. P. Dapkus, and S. R. Nutt, “Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets,” Appl. Phys. Lett. 100, 033119 (2012).
[Crossref]

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

N. Okada and K. Tadatomo, “Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates,” Semicond. Sci. Technol. 27, 024003 (2012).
[Crossref]

F. Scholz, “Semipolar GaN grown on foreign substrates: a review,” Semicond. Sci. Technol. 27, 024002 (2012).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

R. M. Farrell, E. C. Yong, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27, 024001 (2012).
[Crossref]

P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
[Crossref]

H. Y. Ryu, D. S. Shin, and J. I. Shim, “Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material,” Appl. Phys. Lett. 100, 131109 (2012).
[Crossref]

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. B 30, 041513 (2012).
[Crossref]

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

2011 (15)

N. Okada, H. Oshita, K. Yamane, and K. Tadatomo, “High-quality {201} GaN layers on patterned sapphire substrate with wide-terrace,” Appl. Phys. Lett. 99, 242103 (2011).
[Crossref]

N. Okada, H. Oshita, A. Kurisu, and K. Tadatomo, “Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates,” Jpn. J. Appl. Phys. 50, 035602 (2011).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indriect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98, 161107 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, “Threading defect elimination in GaN nanowires,” J. Mater. Res. 26, 2293–2298 (2011).
[Crossref]

S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth,” Electrochem. Solid-State Lett. 15, H47–H50 (2011).
[Crossref]

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19, 25528–25534 (2011).
[Crossref]

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

2010 (21)

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Y. Evstratov, and S. Y. Karpov, “Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity,” Appl. Phys. Lett. 97, 051904 (2010).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
[Crossref]

Q. M. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10, 1554–1558 (2010).
[Crossref]

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi A 207, 2217–2225 (2010).
[Crossref]

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based light emitters,” IEEE Trans. Electron Devices 57, 79–87 (2010).
[Crossref]

F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97, 231118 (2010).
[Crossref]

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degrees of carrier localization,” Appl. Phys. Lett. 97, 201112 (2010).
[Crossref]

A. David and M. J. Grundmann, “Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis,” Appl. Phys. Lett. 96, 103504 (2010).
[Crossref]

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

2009 (12)

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
[Crossref]

N. Okada, A. Kurisu, K. Murakami, and K. Tadatomo, “Growth of semipolar (112) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate,” Appl. Phys. Express 2, 091001 (2009).
[Crossref]

Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Adv. Mater. 21, 2416–2420 (2009).
[Crossref]

A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
[Crossref]

A. Armstrong, G. T. Wang, and A. A. Talin, “Depletion-mode photoconductivity study of deep levels in GaN nanowires,” J. Electron. Mater. 38, 484–489 (2009).
[Crossref]

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

M. Meneghini, N. Trivellin, G. Meneghesso, and E. Zanoni, “A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes,” J. Appl. Phys. 106, 114508 (2009).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94, 191109 (2009).
[Crossref]

2008 (13)

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

Q. Li and G. T. Wang, “Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films,” Appl. Phys. Lett. 93, 043119 (2008).
[Crossref]

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92, 093105 (2008).
[Crossref]

T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl, “Semipolar GaN grown on m-plane sapphire using MOVPE,” Phys. Status Solidi C 5, 1815–1817 (2008).
[Crossref]

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

M. B. Mclaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, “Basal plane stacking-fault related anisotropy in x-ray rocking curve widths of m-plane GaN,” Jpn. J. Appl. Phys. 47, 5429–5431 (2008).
[Crossref]

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103, 014908 (2008).
[Crossref]

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16, 10549–10556 (2008).
[Crossref]

2007 (13)

Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
[Crossref]

T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, “A GaN bulk crystal with improved structural quality grown by the ammonothermal method,” Nat. Mater. 6, 568–571 (2007).
[Crossref]

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
[Crossref]

2006 (10)

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Beyond the ABC: carrier recombinations in semiconductor lasers,” Proc. SPIE 6115, 61151T (2006).
[Crossref]

S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6, 1808–1811 (2006).
[Crossref]

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

A. Romanov, T. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).
[Crossref]

B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, “Improved quality (110) a-plane GaN with sidewall lateral epitaxial overgrowth,” Appl. Phys. Lett. 88, 061908 (2006).
[Crossref]

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[Crossref]

2005 (3)

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov, and Yu. N. Makarov, “Modelling study of MQW LED operation,” Phys. Status Solidi C 2, 2928–2931 (2005).
[Crossref]

F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5, 2287–2291 (2005).
[Crossref]

2004 (2)

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

2003 (1)

T. Kuykendall, P. Pauzauskie, S. K. Lee, Y. F. Zhang, J. Goldberger, and P. D. Yang, “Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections,” Nano Lett. 3, 1063–1066 (2003).
[Crossref]

2002 (1)

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

2001 (1)

L. Chen, A. Yin, J. S. Im, A. V. Nurmikko, J. M. Xu, and J. Han, “Fabrication of 50–100  nm patterned InGaN blue light emitting heterostructures,” Phys. Status Solidi A 188, 135–138 (2001).
[Crossref]

2000 (1)

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

1999 (2)

V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, “Effects of macroscopic polarization in III–V nitride multiple quantum wells,” Phys. Rev. B 60, 8849–8858 (1999).
[Crossref]

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
[Crossref]

1998 (1)

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

1994 (1)

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

1974 (1)

J. W. Matthews and A. E. Blakeslee, “Defects in epitaxial multilayers,” J. Cryst. Growth 27, 118–125 (1974).
[Crossref]

Abare, A.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Adachi, M.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Ahn, B.

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

T. W. Yeh, Y. T. Lin, B. Ahn, L. S. Stewart, D. P. Dapkus, and S. R. Nutt, “Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets,” Appl. Phys. Lett. 100, 033119 (2012).
[Crossref]

Akasaki, I.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Akita, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Albert, S.

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Albrecht, F.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Alimoradi-Jazi, M.

T. Meisch, M. Alimoradi-Jazi, M. Klein, and F. Scholz, “(201) MOVPE and HVPE GaN grown on 2 inch patterned sapphire substrates,” Phys. Status Solidi C 11, 537–540 (2014).
[Crossref]

Allerman, A. A.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

Allsopp, D.

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Allsopp, D. W. E.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
[Crossref]

Alyamani, A. Y.

Amano, H.

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Anderson, R. J.

A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92, 093105 (2008).
[Crossref]

Aragon, A.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

Armstrong, A.

A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
[Crossref]

A. Armstrong, G. T. Wang, and A. A. Talin, “Depletion-mode photoconductivity study of deep levels in GaN nanowires,” J. Electron. Mater. 38, 484–489 (2009).
[Crossref]

Asamizu, H.

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

Avramescu, A.

C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Avrutin, V.

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

Babichev, A. V.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Bae, S. Y.

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth,” Electrochem. Solid-State Lett. 15, H47–H50 (2011).
[Crossref]

Baek, J. H.

S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth,” Electrochem. Solid-State Lett. 15, H47–H50 (2011).
[Crossref]

Baker, T.

A. Romanov, T. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).
[Crossref]

Balakrishnan, G.

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

A. K. Rishinaramangalam, M. N. Fairchild, S. M. U. Masabih, D. M. Shima, G. Balakrishnan, and D. F. Feezell, “In selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes,” in Conference on Lasers and Electro-Optics (CLEO) (2014).

Baranowski, I.

H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758–31773 (2017).
[Crossref]

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).
[Crossref]

Barbagini, F.

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

Baski, A. A.

X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
[Crossref]

Baur, J.

A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based light emitters,” IEEE Trans. Electron Devices 57, 79–87 (2010).
[Crossref]

Becerra, D. L.

K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
[Crossref]

Beirne, G. J.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Bellotti, E.

F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97, 231118 (2010).
[Crossref]

Bengoechea-Encabo, A.

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Benz, A.

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Bernardini, F.

V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, “Effects of macroscopic polarization in III–V nitride multiple quantum wells,” Phys. Rev. B 60, 8849–8858 (1999).
[Crossref]

Bertazzi, F.

F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97, 231118 (2010).
[Crossref]

Bertram, F.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Bhat, R.

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

Bichler, D.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Blakeslee, A. E.

J. W. Matthews and A. E. Blakeslee, “Defects in epitaxial multilayers,” J. Cryst. Growth 27, 118–125 (1974).
[Crossref]

Bogart, K. H. A.

A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
[Crossref]

Bonanno, P. L.

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Boubanga-Tombet, S.

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

Bowen, C. R.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Brandt, P. O.

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Brener, I.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

Brinkley, S.

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

Brinkley, S. E.

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

Bross, A. S.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

Browne, D. A.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. B 30, 041513 (2012).
[Crossref]

Brückner, P.

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Brueck, S.

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

Brueck, S. R.

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
[Crossref]

Brueck, S. R. J.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
[Crossref]

Bryant, B. N.

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emittiing at 530–590  nm with AlGaN interlayers,” J. Cryst. Growth 415, 57–64 (2015).
[Crossref]

Bulashevich, K. A.

V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov, and Yu. N. Makarov, “Modelling study of MQW LED operation,” Phys. Status Solidi C 2, 2928–2931 (2005).
[Crossref]

Burghammer, M.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

Cai, Z. H.

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Calleja, E.

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Campione, S.

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

Chakraborty, A.

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

Chan, C. C. S.

C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
[Crossref]

Chandolu, A.

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

Chang, C. H.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

Chang, C. Y.

Chang, J. R.

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

S. P. Chang, J. R. Chang, K. P. Sou, M. C. Liu, Y. J. Cheng, H. C. Kuo, and C. Y. Chang, “Electrically driven green, olivine, and amber color nanopyramid light emitting diodes,” Opt. Express 21, 23030–23035 (2013).
[Crossref]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

Chang, S. P.

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

S. P. Chang, J. R. Chang, K. P. Sou, M. C. Liu, Y. J. Cheng, H. C. Kuo, and C. Y. Chang, “Electrically driven green, olivine, and amber color nanopyramid light emitting diodes,” Opt. Express 21, 23030–23035 (2013).
[Crossref]

S. P. Chang, K. P. Sou, C. H. Chen, Y. J. Cheng, J. K. Huang, C. H. Lin, H. C. Kuo, C. Y. Chang, and W. F. Hsieh, “Lasing action in gallium nitride quasicrystal nanorod arrays,” Opt. Express 20, 12457–12462 (2012).
[Crossref]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

Chang, W. M.

Chaudhuri, A.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

Chen, C. D.

H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
[Crossref]

Chen, C. H.

Chen, C. P.

Chen, C. Q.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Chen, C. Y.

C. H. Liao, W. M. Chang, Y. F. Yao, H. T. Chen, C. Y. Su, C. Y. Chen, C. Hsieh, H. S. Chen, C. G. Tu, Y. W. Kiang, C. C. Yang, and T. C. Hsu, “Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays,” J. Appl. Phys. 113, 054315 (2013).
[Crossref]

C. H. Liao, W. M. Chang, H. S. Chen, C. Y. Chen, Y. F. Yao, H. T. Chen, C. Y. Su, S. Y. Ting, Y. W. Kiang, and C. C. Yang, “Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod,” Opt. Express 20, 15859–15871 (2012).
[Crossref]

H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
[Crossref]

Chen, D.

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Chen, H.

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photon. J. 9, 8200828 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758–31773 (2017).
[Crossref]

H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
[Crossref]

H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
[Crossref]

H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well,” J. Appl. Phys. 121, 014501 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763–766 (2017).
[Crossref]

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications,” J. Appl. Phys. 119, 174502 (2016).
[Crossref]

H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24, A856–A867 (2016).
[Crossref]

Chen, H. S.

Chen, H. T.

Chen, L.

L. Chen, A. Yin, J. S. Im, A. V. Nurmikko, J. M. Xu, and J. Han, “Fabrication of 50–100  nm patterned InGaN blue light emitting heterostructures,” Phys. Status Solidi A 188, 135–138 (2001).
[Crossref]

Chen, L. Y.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16, 10549–10556 (2008).
[Crossref]

Chen, P.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Chen, P. G.

Chen, W. H.

Chen, X.

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

Chen, Z.

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

Cheng, Y.

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

Cheng, Y. J.

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

S. P. Chang, J. R. Chang, K. P. Sou, M. C. Liu, Y. J. Cheng, H. C. Kuo, and C. Y. Chang, “Electrically driven green, olivine, and amber color nanopyramid light emitting diodes,” Opt. Express 21, 23030–23035 (2013).
[Crossref]

S. P. Chang, K. P. Sou, C. H. Chen, Y. J. Cheng, J. K. Huang, C. H. Lin, H. C. Kuo, C. Y. Chang, and W. F. Hsieh, “Lasing action in gallium nitride quasicrystal nanorod arrays,” Opt. Express 20, 12457–12462 (2012).
[Crossref]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

Cheng, Y. W.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16, 10549–10556 (2008).
[Crossref]

Cheng, Z.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

Cherns, D.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Chhajed, S.

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

Chichibu, S. F.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Cho, J.

J. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photon. Rev. 7, 408–421 (2013).
[Crossref]

G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[Crossref]

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

Cho, Y.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
[Crossref]

Cho, Y. H.

S. H. Lim, Y. H. Ko, C. Rodriguez, S. H. Gong, and Y. H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light Sci. Appl. 5, e16030 (2016).
[Crossref]

Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
[Crossref]

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

Choi, J. W.

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Chow, T. P.

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).

Chow, W. W.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

Christen, J.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Chuang, C. Y.

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

Chun, H.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Chung, H. J.

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

Chung, R. B.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

Chung, U. I.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
[Crossref]

Chuvilin, A.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

Ciechonski, R.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Colby, R.

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

Coltrin, M. E.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

Corbett, B.

Cornish, M.

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

Coulon, P. M.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Craford, M. G.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Crawford, M. H.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19, 25528–25534 (2011).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

Creighton, J. R.

Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Adv. Mater. 21, 2416–2420 (2009).
[Crossref]

Cross, K. C.

Dai, Q.

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

Dai, T.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103, 014908 (2008).
[Crossref]

Dapkus, D. P.

T. W. Yeh, Y. T. Lin, B. Ahn, L. S. Stewart, D. P. Dapkus, and S. R. Nutt, “Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets,” Appl. Phys. Lett. 100, 033119 (2012).
[Crossref]

Dapkus, P. D.

Y. Nakajima, Y. Lin, and P. D. Dapkus, “Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs,” Phys. Status Solidi A 213, 2452–2460 (2016).
[Crossref]

Y. Nakajima and P. D. Dapkus, “The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures,” Appl. Phys. Lett. 109, 083101 (2016).
[Crossref]

Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23, 465601 (2012).
[Crossref]

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

David, A.

A. David and M. J. Grundmann, “Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis,” Appl. Phys. Lett. 96, 103504 (2010).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

Davis, R. W.

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

Dawson, M. D.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

de Mierry, P.

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

Delaney, K. T.

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indriect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98, 161107 (2011).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94, 191109 (2009).
[Crossref]

Della Sala, F.

V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, “Effects of macroscopic polarization in III–V nitride multiple quantum wells,” Phys. Rev. B 60, 8849–8858 (1999).
[Crossref]

DenBaars, S. P.

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

H. Fu, Z. Lu, X. Zhao, Y. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20) InGaN light-emitting diodes by time-resolved photoluminescence,” J. Disp. Technol. 12, 736–741 (2016).
[Crossref]

C. Shen, C. Lee, T. K. Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. EI-Desouki, and B. S. Ooi, “High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth,” Opt. Express 24, 20281–20286 (2016).
[Crossref]

K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
[Crossref]

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
[Crossref]

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

R. M. Farrell, E. C. Yong, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27, 024001 (2012).
[Crossref]

P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, “Improved quality (110) a-plane GaN with sidewall lateral epitaxial overgrowth,” Appl. Phys. Lett. 88, 061908 (2006).
[Crossref]

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Detchprohm, T.

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
[Crossref]

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).

Di Carlo, A.

V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, “Effects of macroscopic polarization in III–V nitride multiple quantum wells,” Phys. Rev. B 60, 8849–8858 (1999).
[Crossref]

Ding, Y.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

Dinh, D. V.

Dong, Y.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

Downey, B. P.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

Dräger, A. D.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Durnev, M. V.

M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Y. Evstratov, and S. Y. Karpov, “Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity,” Appl. Phys. Lett. 97, 051904 (2010).
[Crossref]

Durniak, M. T.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

Edwards, P. R.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

EI-Desouki, M. M.

Elsaesser, D.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

Elsass, C. R.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Enya, Y.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Evstratov, I. Y.

M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Y. Evstratov, and S. Y. Karpov, “Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity,” Appl. Phys. Lett. 97, 051904 (2010).
[Crossref]

Ewoldt, D. A.

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

Fairchild, M. N.

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, “Threading defect elimination in GaN nanowires,” J. Mater. Res. 26, 2293–2298 (2011).
[Crossref]

A. K. Rishinaramangalam, M. N. Fairchild, S. M. U. Masabih, D. M. Shima, G. Balakrishnan, and D. F. Feezell, “In selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes,” in Conference on Lasers and Electro-Optics (CLEO) (2014).

Fan, Y.

Fang, H.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103, 014908 (2008).
[Crossref]

Fareed, R. S. Q.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Farrell, R. M.

Y. Zhao, R. M. Farrell, Y. R. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53, 100206 (2014).
[Crossref]

R. M. Farrell, E. C. Yong, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27, 024001 (2012).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

Fasol, G.

S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, 2000).

Fathololoumi, S.

Faulkner, G.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Fay, P.

D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
[Crossref]

Feezell, D.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

Feezell, D. F.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

A. K. Rishinaramangalam, M. N. Fairchild, S. M. U. Masabih, D. M. Shima, G. Balakrishnan, and D. F. Feezell, “In selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes,” in Conference on Lasers and Electro-Optics (CLEO) (2014).

Fellows, N.

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

Fellows, N. N.

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

Feneberg, M.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

Feng, W.

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

Ferreira, R. X. G.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Ficher, A. J.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

Fichtenbaum, N. A.

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

Figiel, J. J.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs,” Phys. Status Solidi A 211, 748–751 (2014).
[Crossref]

Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19, 25528–25534 (2011).
[Crossref]

Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Adv. Mater. 21, 2416–2420 (2009).
[Crossref]

Fini, P. T.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Fiorentini, V.

V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, “Effects of macroscopic polarization in III–V nitride multiple quantum wells,” Phys. Rev. B 60, 8849–8858 (1999).
[Crossref]

Fischer, A. J.

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emittiing at 530–590  nm with AlGaN interlayers,” J. Cryst. Growth 415, 57–64 (2015).
[Crossref]

Fu, B.

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

Fu, H.

H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well,” J. Appl. Phys. 121, 014501 (2017).
[Crossref]

H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763–766 (2017).
[Crossref]

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photon. J. 9, 8200828 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758–31773 (2017).
[Crossref]

H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
[Crossref]

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24, A856–A867 (2016).
[Crossref]

H. Fu, Z. Lu, X. Zhao, Y. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20) InGaN light-emitting diodes by time-resolved photoluminescence,” J. Disp. Technol. 12, 736–741 (2016).
[Crossref]

H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications,” J. Appl. Phys. 119, 174502 (2016).
[Crossref]

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6, 065013 (2016).
[Crossref]

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

Fujii, T.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

Fujimura, I.

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

Fujito, K.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
[Crossref]

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

Funato, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

Fündling, S.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Fuoss, P. H.

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Furukawa, M.

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
[Crossref]

Gaevski, M. E.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Gallinat, C. S.

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

Gao, X.

D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
[Crossref]

Gao, Y.

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]

Garcia, R. W.

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

Gardner, N. F.

Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
[Crossref]

Gelzinyte, K.

K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
[Crossref]

Gilbert, T.

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

Gîrgel, I.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Goano, M.

F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97, 231118 (2010).
[Crossref]

Goldberger, J.

T. Kuykendall, P. Pauzauskie, S. K. Lee, Y. F. Zhang, J. Goldberger, and P. D. Yang, “Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections,” Nano Lett. 3, 1063–1066 (2003).
[Crossref]

Gong, S. H.

S. H. Lim, Y. H. Ko, C. Rodriguez, S. H. Gong, and Y. H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light Sci. Appl. 5, e16030 (2016).
[Crossref]

Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
[Crossref]

Gradecak, S.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5, 2287–2291 (2005).
[Crossref]

Grahn, H. T.

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Griffiths, I.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Grundmann, M. J.

A. David and M. J. Grundmann, “Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis,” Appl. Phys. Lett. 96, 103504 (2010).
[Crossref]

Gu, E.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Guo, S.

D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
[Crossref]

Ha, J. S.

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

Haas, H.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

Hader, J.

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Beyond the ABC: carrier recombinations in semiconductor lasers,” Proc. SPIE 6115, 61151T (2006).
[Crossref]

Haeger, D. A.

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

Hahn, B.

A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based light emitters,” IEEE Trans. Electron Devices 57, 79–87 (2010).
[Crossref]

Han, J.

B. Leung, D. Wang, Y. S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi B 253, 23–35 (2016).
[Crossref]

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

L. Chen, A. Yin, J. S. Im, A. V. Nurmikko, J. M. Xu, and J. Han, “Fabrication of 50–100  nm patterned InGaN blue light emitting heterostructures,” Phys. Status Solidi A 188, 135–138 (2001).
[Crossref]

Han, P.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Hangleiter, A.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Hanke, M.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

Hao, Z.

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degrees of carrier localization,” Appl. Phys. Lett. 97, 201112 (2010).
[Crossref]

Harbers, G.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Hardy, M. T.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
[Crossref]

Hartmann, J.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Hashimoto, R.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11, 628–631 (2014).
[Crossref]

J. I. Hwang, R. Hashimoto, S. Saito, and S. Nunoue, “Development of InGaN-based red LED grown on (0001) polar surface,” Appl. Phys. Express 7, 071003 (2014).
[Crossref]

Hashimoto, T.

T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, “A GaN bulk crystal with improved structural quality grown by the ammonothermal method,” Nat. Mater. 6, 568–571 (2007).
[Crossref]

Haskell, B. A.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

Heinz, D.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Herrnsdorf, J.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

Hersee, S. D.

S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, “Threading defect elimination in GaN nanowires,” J. Mater. Res. 26, 2293–2298 (2011).
[Crossref]

S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6, 1808–1811 (2006).
[Crossref]

Hirai, A.

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

M. B. Mclaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, “Basal plane stacking-fault related anisotropy in x-ray rocking curve widths of m-plane GaN,” Jpn. J. Appl. Phys. 47, 5429–5431 (2008).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

Hiramatsu, K.

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
[Crossref]

Hirasawa, H.

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

Hirth, J. P.

J. P. Hirth and J. Lothe, “The influence of lattice periodicity,” in Theory of Dislocations (Wiley, 1982), Chap. 8, pp. 231–278.

Hoffmann, V.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

Holtz, M.

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

Honda, Y.

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

Hong, S. Y.

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Hong, Y. J.

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

Hou, F.

M. R. Zhang, Q. M. Jiang, S. H. Zhang, Z. G. Wang, F. Hou, and G. B. Pan, “Fabrication of gallium nitride nanowires by metal-assisted photochemical etching,” Appl. Surf. Sci. 422, 216–220 (2017).
[Crossref]

Hsieh, C.

C. H. Liao, C. G. Tu, W. M. Chang, C. Y. Su, P. Y. Shih, H. T. Chen, Y. F. Yao, C. Hsieh, H. S. Chen, C. H. Lin, C. K. Yu, Y. W. Kiang, and C. C. Yang, “Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition,” Opt. Express 22, 17303–17319 (2014).
[Crossref]

C. H. Liao, W. M. Chang, Y. F. Yao, H. T. Chen, C. Y. Su, C. Y. Chen, C. Hsieh, H. S. Chen, C. G. Tu, Y. W. Kiang, C. C. Yang, and T. C. Hsu, “Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays,” J. Appl. Phys. 113, 054315 (2013).
[Crossref]

Hsieh, M. Y.

Hsieh, W. F.

Hsieh, Y. A.

Hsiung, C. L.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

Hsu, P.

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

Hsu, P. S.

P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

Hsu, T. C.

C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
[Crossref]

C. H. Liao, W. M. Chang, Y. F. Yao, H. T. Chen, C. Y. Su, C. Y. Chen, C. Hsieh, H. S. Chen, C. G. Tu, Y. W. Kiang, C. C. Yang, and T. C. Hsu, “Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays,” J. Appl. Phys. 113, 054315 (2013).
[Crossref]

Hu, E. L.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

Hu, Q.

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

Hua, X.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Huang, C.

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

Huang, C. F.

H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
[Crossref]

Huang, C. Y.

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

Huang, J.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16, 10549–10556 (2008).
[Crossref]

Huang, J. K.

S. P. Chang, K. P. Sou, C. H. Chen, Y. J. Cheng, J. K. Huang, C. H. Lin, H. C. Kuo, C. Y. Chang, and W. F. Hsieh, “Lasing action in gallium nitride quasicrystal nanorod arrays,” Opt. Express 20, 12457–12462 (2012).
[Crossref]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

Huang, S.

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

Huang, T.

Z. Liu, J. Ma, T. Huang, C. Liu, and K. M. Lau, “Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors,” Appl. Phys. Lett. 104, 091103 (2014).
[Crossref]

Huang, X.

H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well,” J. Appl. Phys. 121, 014501 (2017).
[Crossref]

H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
[Crossref]

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763–766 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).
[Crossref]

H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758–31773 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photon. J. 9, 8200828 (2017).
[Crossref]

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24, A856–A867 (2016).
[Crossref]

H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications,” J. Appl. Phys. 119, 174502 (2016).
[Crossref]

Huang, Y. Y.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

Huckenbeck, B.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Hugauer, H. J.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Humphreys, C. J.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Hurni, C. A.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. B 30, 041513 (2012).
[Crossref]

Hurtado, A.

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

Hwang, J.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11, 628–631 (2014).
[Crossref]

Hwang, J. I.

J. I. Hwang, R. Hashimoto, S. Saito, and S. Nunoue, “Development of InGaN-based red LED grown on (0001) polar surface,” Appl. Phys. Express 7, 071003 (2014).
[Crossref]

Hwang, J. M.

Hwang, S. M.

D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
[Crossref]

Ichihara, J.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[Crossref]

Ichikawa, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Im, J. S.

L. Chen, A. Yin, J. S. Im, A. V. Nurmikko, J. M. Xu, and J. Han, “Fabrication of 50–100  nm patterned InGaN blue light emitting heterostructures,” Phys. Status Solidi A 188, 135–138 (2001).
[Crossref]

Imer, B.

B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, “Improved quality (110) a-plane GaN with sidewall lateral epitaxial overgrowth,” Appl. Phys. Lett. 88, 061908 (2006).
[Crossref]

Iso, K.

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

Iveland, J.

C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
[Crossref]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electricali: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110, 177406 (2013).
[Crossref]

Iyechika, Y.

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
[Crossref]

Iza, M.

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
[Crossref]

Izyumskaya, N.

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

Jacopin, G.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Jagadamma, L. K.

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Jahn, U.

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Jenisch, S.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Jetter, M.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Jia, W.

C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
[Crossref]

Jia, Z.

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

Jiang, F.

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Jiang, Q. M.

M. R. Zhang, Q. M. Jiang, S. H. Zhang, Z. G. Wang, F. Hou, and G. B. Pan, “Fabrication of gallium nitride nanowires by metal-assisted photochemical etching,” Appl. Surf. Sci. 422, 216–220 (2017).
[Crossref]

Jiang, Y. B.

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
[Crossref]

Jin, L. H.

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

Julien, F. H.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Jung, B. O.

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

Kaiser, U.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

Kamiyama, S.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Kang, J.

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

Karlicek, R. F.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).

Karpov, S. Y.

M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Y. Evstratov, and S. Y. Karpov, “Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity,” Appl. Phys. Lett. 97, 051904 (2010).
[Crossref]

Karpov, S. Yu.

V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov, and Yu. N. Makarov, “Modelling study of MQW LED operation,” Phys. Status Solidi C 2, 2928–2931 (2005).
[Crossref]

Katzer, D. S.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

Kawaguchi, Y.

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

Kawakami, Y.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

Kazimirov, A.

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Ke, M. Y.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16, 10549–10556 (2008).
[Crossref]

Kelchner, K. M.

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

Keller, S.

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Kelly, A. E.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Kenissl, M.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Khan, M. A.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Kiang, Y. W.

Kiang, Y.-W.

X. Zhang, C.-G. Tu, Y.-W. Kiang, and C. Yang, “Structure variation of a sidewall quantum well on a GaN nanorod,” Nanotechnology 28, 045203 (2017).
[Crossref]

Kim, D. H.

S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth,” Electrochem. Solid-State Lett. 15, H47–H50 (2011).
[Crossref]

Kim, D. S.

D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
[Crossref]

Kim, D. Y.

D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
[Crossref]

Kim, J.

Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
[Crossref]

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
[Crossref]

Kim, J. H.

Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
[Crossref]

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

Kim, J. K.

J. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photon. Rev. 7, 408–421 (2013).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

Kim, K. C.

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

Kim, M.

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

Kim, M. H.

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

Kim, M.-H.

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

Kim, S. Y.

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

Kim, T.

Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
[Crossref]

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
[Crossref]

Kioupakis, E.

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indriect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98, 161107 (2011).
[Crossref]

Kiyomi, K.

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

Klein, M.

T. Meisch, M. Alimoradi-Jazi, M. Klein, and F. Scholz, “(201) MOVPE and HVPE GaN grown on 2 inch patterned sapphire substrates,” Phys. Status Solidi C 11, 537–540 (2014).
[Crossref]

Knauer, A.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

Kneissl, M.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl, “Semipolar GaN grown on m-plane sapphire using MOVPE,” Phys. Status Solidi C 5, 1815–1817 (2008).
[Crossref]

Knyrim, J. S.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Ko, S. M.

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

Ko, Y. H.

S. H. Lim, Y. H. Ko, C. Rodriguez, S. H. Gong, and Y. H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light Sci. Appl. 5, e16030 (2016).
[Crossref]

Y. H. Ko, J. H. Kim, S. H. Gong, J. Kim, T. Kim, and Y. H. Cho, “Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures,” ACS Photon. 2, 515–520 (2015).
[Crossref]

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

Koch, S. W.

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Beyond the ABC: carrier recombinations in semiconductor lasers,” Proc. SPIE 6115, 61151T (2006).
[Crossref]

Koleske, D. D.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emittiing at 530–590  nm with AlGaN interlayers,” J. Cryst. Growth 415, 57–64 (2015).
[Crossref]

G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs,” Phys. Status Solidi A 211, 748–751 (2014).
[Crossref]

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

J. J. Wierer, Q. M. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, “III-nitride core-shell nanowire arrayed solar cells,” Nanotechnology 23, 194007 (2012).
[Crossref]

Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19, 25528–25534 (2011).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

Kolesker, D. D.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

Kopp, D.

D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
[Crossref]

Koslow, I.

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

Kosugi, T.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

Kotula, P. G.

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emittiing at 530–590  nm with AlGaN interlayers,” J. Cryst. Growth 415, 57–64 (2015).
[Crossref]

Kovac, J.

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Koyama, T.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Krames, M. R.

S. Nakamura and M. R. Krames, “History of Gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
[Crossref]

Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
[Crossref]

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Krause, F. F.

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

Krause, T.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

Kryliouk, O.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Kubo, S.

K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
[Crossref]

Kuo, H. C.

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

S. P. Chang, J. R. Chang, K. P. Sou, M. C. Liu, Y. J. Cheng, H. C. Kuo, and C. Y. Chang, “Electrically driven green, olivine, and amber color nanopyramid light emitting diodes,” Opt. Express 21, 23030–23035 (2013).
[Crossref]

S. P. Chang, K. P. Sou, C. H. Chen, Y. J. Cheng, J. K. Huang, C. H. Lin, H. C. Kuo, C. Y. Chang, and W. F. Hsieh, “Lasing action in gallium nitride quasicrystal nanorod arrays,” Opt. Express 20, 12457–12462 (2012).
[Crossref]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

Kuo, Y. S.

B. Leung, D. Wang, Y. S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi B 253, 23–35 (2016).
[Crossref]

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Kuokstis, E.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Kurisu, A.

N. Okada, H. Oshita, A. Kurisu, and K. Tadatomo, “Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates,” Jpn. J. Appl. Phys. 50, 035602 (2011).
[Crossref]

N. Okada, A. Kurisu, K. Murakami, and K. Tadatomo, “Growth of semipolar (112) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate,” Appl. Phys. Express 2, 091001 (2009).
[Crossref]

Kuryatkov, V. V.

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

Kuykendall, T.

T. Kuykendall, P. Pauzauskie, S. K. Lee, Y. F. Zhang, J. Goldberger, and P. D. Yang, “Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections,” Nano Lett. 3, 1063–1066 (2003).
[Crossref]

Kvit, A. V.

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

Kwon, B. J.

Y. H. Ko, J. H. Kim, L. H. Jin, S. M. Ko, B. J. Kwon, J. Kim, T. Kim, and Y. H. Cho, “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23, 5364–5369 (2011).
[Crossref]

Kyono, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Lai, E.

A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92, 093105 (2008).
[Crossref]

Lan, D.

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

Lang, J. R.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. B 30, 041513 (2012).
[Crossref]

Latifi, K.

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Lau, K. M.

Z. Liu, J. Ma, T. Huang, C. Liu, and K. M. Lau, “Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors,” Appl. Phys. Lett. 104, 091103 (2014).
[Crossref]

Laubsch, A.

A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based light emitters,” IEEE Trans. Electron Devices 57, 79–87 (2010).
[Crossref]

Lauhon, L. J.

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

Lavenus, P.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Le Boulbar, E. D.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Ledig, J.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Lee, C.

Lee, C. H.

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

Lee, D. S.

D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
[Crossref]

S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth,” Electrochem. Solid-State Lett. 15, H47–H50 (2011).
[Crossref]

Lee, J. Y.

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

Lee, M. H.

Lee, S.

B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode,” Nano. Res. Lett. 11, 215 (2016).
[Crossref]

D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
[Crossref]

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
[Crossref]

Lee, S. C.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
[Crossref]

Lee, S. J.

S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth,” Electrochem. Solid-State Lett. 15, H47–H50 (2011).
[Crossref]

Lee, S. K.

T. Kuykendall, P. Pauzauskie, S. K. Lee, Y. F. Zhang, J. Goldberger, and P. D. Yang, “Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections,” Nano Lett. 3, 1063–1066 (2003).
[Crossref]

Lee, S. M.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

Lee, S. R.

Lee, Y. J.

Lester, L.

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Lester, L. F.

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

Lester, S.

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

Leung, B.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

B. Leung, D. Wang, Y. S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi B 253, 23–35 (2016).
[Crossref]

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

Leute, R. A. R.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Li, C.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

Li, C. K.

C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
[Crossref]

Li, H.

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

Li, J.

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

Li, Q.

G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs,” Phys. Status Solidi A 211, 748–751 (2014).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19, 25528–25534 (2011).
[Crossref]

A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
[Crossref]

Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Adv. Mater. 21, 2416–2420 (2009).
[Crossref]

Q. Li and G. T. Wang, “Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films,” Appl. Phys. Lett. 93, 043119 (2008).
[Crossref]

Li, Q. M.

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

J. J. Wierer, Q. M. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, “III-nitride core-shell nanowire arrayed solar cells,” Nanotechnology 23, 194007 (2012).
[Crossref]

Q. M. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10, 1554–1558 (2010).
[Crossref]

Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
[Crossref]

Li, S.

S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys. 111, 071101 (2012).
[Crossref]

Li, X.

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

Li, Y.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5, 2287–2291 (2005).
[Crossref]

Li, Y. J.

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

Li, Y. L.

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

Li, Z.

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

Liang, Z.

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

Liao, C. H.

Liao, K. Y.

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

Liao, M. H.

Lieber, C. M.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5, 2287–2291 (2005).
[Crossref]

Lim, S. H.

S. H. Lim, Y. H. Ko, C. Rodriguez, S. H. Gong, and Y. H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light Sci. Appl. 5, e16030 (2016).
[Crossref]

Lin, C. H.

Lin, G. B.

G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[Crossref]

Lin, Y.

Y. Nakajima, Y. Lin, and P. D. Dapkus, “Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs,” Phys. Status Solidi A 213, 2452–2460 (2016).
[Crossref]

A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
[Crossref]

Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Adv. Mater. 21, 2416–2420 (2009).
[Crossref]

Lin, Y. D.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

Lin, Y. T.

T. W. Yeh, Y. T. Lin, B. Ahn, L. S. Stewart, D. P. Dapkus, and S. R. Nutt, “Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets,” Appl. Phys. Lett. 100, 033119 (2012).
[Crossref]

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23, 465601 (2012).
[Crossref]

Linder, N.

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

Lipski, F.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Liu, A. S.

C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
[Crossref]

Liu, B.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Liu, C.

Z. Liu, J. Ma, T. Huang, C. Liu, and K. M. Lau, “Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors,” Appl. Phys. Lett. 104, 091103 (2014).
[Crossref]

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Liu, H. Y.

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

Liu, M. C.

Liu, R.

Liu, S.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Liu, X.

Liu, Z.

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

Z. Liu, J. Ma, T. Huang, C. Liu, and K. M. Lau, “Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors,” Appl. Phys. Lett. 104, 091103 (2014).
[Crossref]

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

Lohr, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Lopez-Romero, D.

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Lothe, J.

J. P. Hirth and J. Lothe, “The influence of lattice periodicity,” in Theory of Dislocations (Wiley, 1982), Chap. 8, pp. 231–278.

Lu, H.

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

Lu, P.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

Lu, Y. C.

H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
[Crossref]

Lu, Y. H.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

Lu, Z.

H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).
[Crossref]

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763–766 (2017).
[Crossref]

H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
[Crossref]

H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well,” J. Appl. Phys. 121, 014501 (2017).
[Crossref]

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photon. J. 9, 8200828 (2017).
[Crossref]

H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
[Crossref]

H. Fu, Z. Lu, X. Zhao, Y. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20) InGaN light-emitting diodes by time-resolved photoluminescence,” J. Disp. Technol. 12, 736–741 (2016).
[Crossref]

H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications,” J. Appl. Phys. 119, 174502 (2016).
[Crossref]

H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24, A856–A867 (2016).
[Crossref]

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6, 065013 (2016).
[Crossref]

Lugauer, H. J.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Lugli, P.

V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, “Effects of macroscopic polarization in III–V nitride multiple quantum wells,” Phys. Rev. B 60, 8849–8858 (1999).
[Crossref]

Luk, T. S.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

Luo, Y.

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degrees of carrier localization,” Appl. Phys. Lett. 97, 201112 (2010).
[Crossref]

Lutgen, S.

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

Ma, J.

Z. Liu, J. Ma, T. Huang, C. Liu, and K. M. Lau, “Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors,” Appl. Phys. Lett. 104, 091103 (2014).
[Crossref]

Ma, P.

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

Mack, M.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Maeda, T.

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
[Crossref]

Makarov, Yu. N.

V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov, and Yu. N. Makarov, “Modelling study of MQW LED operation,” Phys. Status Solidi C 2, 2928–2931 (2005).
[Crossref]

Mandl, M.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Marcinkevicius, S.

K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
[Crossref]

Martens, M.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Martin, R. W.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Martinelli, L.

C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
[Crossref]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electricali: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110, 177406 (2013).
[Crossref]

Martinez, J. A.

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

Masabih, S. M. U.

A. K. Rishinaramangalam, M. N. Fairchild, S. M. U. Masabih, D. M. Shima, G. Balakrishnan, and D. F. Feezell, “In selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes,” in Conference on Lasers and Electro-Optics (CLEO) (2014).

Masui, H.

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

Matthews, J. W.

J. W. Matthews and A. E. Blakeslee, “Defects in epitaxial multilayers,” J. Cryst. Growth 27, 118–125 (1974).
[Crossref]

Max, B.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

McConkie, T. O.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

McGroddy, K.

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

Mckendry, J. D.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Mckendry, J. J. D.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

Mclaurin, M. B.

M. B. Mclaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, “Basal plane stacking-fault related anisotropy in x-ray rocking curve widths of m-plane GaN,” Jpn. J. Appl. Phys. 47, 5429–5431 (2008).
[Crossref]

Mehrtens, T.

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

Meisch, T.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

T. Meisch, M. Alimoradi-Jazi, M. Klein, and F. Scholz, “(201) MOVPE and HVPE GaN grown on 2 inch patterned sapphire substrates,” Phys. Status Solidi C 11, 537–540 (2014).
[Crossref]

Melo, T.

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

Meneghesso, G.

M. Meneghini, N. Trivellin, G. Meneghesso, and E. Zanoni, “A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes,” J. Appl. Phys. 106, 114508 (2009).
[Crossref]

Meneghini, M.

M. Meneghini, N. Trivellin, G. Meneghesso, and E. Zanoni, “A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes,” J. Appl. Phys. 106, 114508 (2009).
[Crossref]

Menniger, J.

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Metzner, S.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

Meyaard, D.

G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[Crossref]

Meyaard, D. S.

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

Meyer, D. J.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

Mi, Z.

Michler, P.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Mishkat-Ul-Masabih, S.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

Mishra, U. K.

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

Miyake, H.

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
[Crossref]

Mochizuki, T.

K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
[Crossref]

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

Moloney, J. V.

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Beyond the ABC: carrier recombinations in semiconductor lasers,” Proc. SPIE 6115, 61151T (2006).
[Crossref]

Monavarian, M.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

Montes, J.

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1  kV,” IEEE Electron Device Lett. 38, 1286–1289 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photon. J. 9, 8200828 (2017).
[Crossref]

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

Montes, J. A.

H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
[Crossref]

H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758–31773 (2017).
[Crossref]

Morkoc, H.

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
[Crossref]

Motogaito, A.

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
[Crossref]

Mounir, C.

C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
[Crossref]

Mueller, G. O.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Mueller-Mach, R.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Mukai, T.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

Muller, M.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Müller, G. O.

Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
[Crossref]

Müller, M.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

Müller-Caspary, K.

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

Munkholm, A.

Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
[Crossref]

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Murakami, K.

N. Okada, A. Kurisu, K. Murakami, and K. Tadatomo, “Growth of semipolar (112) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate,” Appl. Phys. Express 2, 091001 (2009).
[Crossref]

Mymrin, V. F.

V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov, and Yu. N. Makarov, “Modelling study of MQW LED operation,” Phys. Status Solidi C 2, 2928–2931 (2005).
[Crossref]

Nagao, S.

K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
[Crossref]

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

Nagaoka, H.

K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
[Crossref]

Nakagawa, D.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[Crossref]

Nakajima, Y.

Y. Nakajima, Y. Lin, and P. D. Dapkus, “Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs,” Phys. Status Solidi A 213, 2452–2460 (2016).
[Crossref]

Y. Nakajima and P. D. Dapkus, “The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures,” Appl. Phys. Lett. 109, 083101 (2016).
[Crossref]

Nakamura, S.

X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).
[Crossref]

C. Shen, C. Lee, T. K. Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. EI-Desouki, and B. S. Ooi, “High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth,” Opt. Express 24, 20281–20286 (2016).
[Crossref]

H. Fu, Z. Lu, X. Zhao, Y. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20) InGaN light-emitting diodes by time-resolved photoluminescence,” J. Disp. Technol. 12, 736–741 (2016).
[Crossref]

K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
[Crossref]

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
[Crossref]

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

S. Nakamura and M. R. Krames, “History of Gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
[Crossref]

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, “A GaN bulk crystal with improved structural quality grown by the ammonothermal method,” Nat. Mater. 6, 568–571 (2007).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

A. Romanov, T. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, 2000).

Nami, M.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

Namita, H.

K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, “Bulk GaN crystals grown by HVPE,” J. Cryst. Growth 311, 3011–3014 (2009).
[Crossref]

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

Narukawa, Y.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

Nepal, N.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

Netzel, C.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl, “Semipolar GaN grown on m-plane sapphire using MOVPE,” Phys. Status Solidi C 5, 1815–1817 (2008).
[Crossref]

Neufeld, C. J.

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

Ng, T. K.

Ni, X.

X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
[Crossref]

Niehle, M.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

Nikishin, S. A.

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

Nishiyama, K.

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi A 176, 535–543 (1999).
[Crossref]

Nunoue, S.

J. I. Hwang, R. Hashimoto, S. Saito, and S. Nunoue, “Development of InGaN-based red LED grown on (0001) polar surface,” Appl. Phys. Express 7, 071003 (2014).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11, 628–631 (2014).
[Crossref]

Nurmikko, A. V.

L. Chen, A. Yin, J. S. Im, A. V. Nurmikko, J. M. Xu, and J. Han, “Fabrication of 50–100  nm patterned InGaN blue light emitting heterostructures,” Phys. Status Solidi A 188, 135–138 (2001).
[Crossref]

Nutt, S. R.

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

T. W. Yeh, Y. T. Lin, B. Ahn, L. S. Stewart, D. P. Dapkus, and S. R. Nutt, “Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets,” Appl. Phys. Lett. 100, 033119 (2012).
[Crossref]

O’Brien, D.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

O’Brien, D. C.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

O’Brien, J. D.

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

O’Malley, S. M.

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Oh, S. H.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

Ohta, H.

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[Crossref]

Okada, N.

N. Okada and K. Tadatomo, “Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates,” Semicond. Sci. Technol. 27, 024003 (2012).
[Crossref]

N. Okada, H. Oshita, A. Kurisu, and K. Tadatomo, “Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates,” Jpn. J. Appl. Phys. 50, 035602 (2011).
[Crossref]

N. Okada, H. Oshita, K. Yamane, and K. Tadatomo, “High-quality {201} GaN layers on patterned sapphire substrate with wide-terrace,” Appl. Phys. Lett. 99, 242103 (2011).
[Crossref]

N. Okada, A. Kurisu, K. Murakami, and K. Tadatomo, “Growth of semipolar (112) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate,” Appl. Phys. Express 2, 091001 (2009).
[Crossref]

Okamoto, K.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[Crossref]

Okur, S.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

Omelchenko, A. V.

M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Y. Evstratov, and S. Y. Karpov, “Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity,” Appl. Phys. Lett. 97, 051904 (2010).
[Crossref]

Onuma, T.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Ooi, B. S.

Oota, H.

K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, “High-quality nonpolar m-plane GaN substrates grown by HVPE,” Phys. Status Solidi A 205, 1056–1059 (2008).
[Crossref]

Oshita, H.

N. Okada, H. Oshita, K. Yamane, and K. Tadatomo, “High-quality {201} GaN layers on patterned sapphire substrate with wide-terrace,” Appl. Phys. Lett. 99, 242103 (2011).
[Crossref]

N. Okada, H. Oshita, A. Kurisu, and K. Tadatomo, “Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates,” Jpn. J. Appl. Phys. 50, 035602 (2011).
[Crossref]

Ozgur, U.

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
[Crossref]

Padalkar, S.

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

Palacios, T.

D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, “300-GHz InAlN/GaN HEMTs with InGaN back barrier,” IEEE Electron Device Lett. 32, 1525–1527 (2011).
[Crossref]

Pan, C. C.

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

Pan, G. B.

M. R. Zhang, Q. M. Jiang, S. H. Zhang, Z. G. Wang, F. Hou, and G. B. Pan, “Fabrication of gallium nitride nanowires by metal-assisted photochemical etching,” Appl. Surf. Sci. 422, 216–220 (2017).
[Crossref]

Pandikunta, M.

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

Parbrook, P. J.

Park, H.-G.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

Park, S. H.

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Park, Y.

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {112} InGaN multiquantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97, 241111 (2010).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

Park, Y. J.

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

Pasenow, B.

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

Pauzauskie, P.

T. Kuykendall, P. Pauzauskie, S. K. Lee, Y. F. Zhang, J. Goldberger, and P. D. Yang, “Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections,” Nano Lett. 3, 1063–1066 (2003).
[Crossref]

Pearton, S. J.

S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, 2000).

Peng, L. H.

Penty, R. V.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Peretti, J.

C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
[Crossref]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electricali: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110, 177406 (2013).
[Crossref]

Peter, M.

A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based light emitters,” IEEE Trans. Electron Devices 57, 79–87 (2010).
[Crossref]

Peterson, E. J.

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

Petroff, P. M.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Pfaff, N.

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

Piccardo, M.

C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
[Crossref]

Piprek, J.

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi A 207, 2217–2225 (2010).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

Ploch, S.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Ploog, K. H.

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Podolskaya, N. I.

V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov, and Yu. N. Makarov, “Modelling study of MQW LED operation,” Phys. Status Solidi C 2, 2928–2931 (2005).
[Crossref]

Pohl-Klein, B.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Prasankumar, R. P.

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

Pristovsek, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Pynn, C. D.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105, 171106 (2014).
[Crossref]

Qian, F.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5, 2287–2291 (2005).
[Crossref]

Quan, Z.

Rajbhandari, S.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Ramsteiner, M.

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Rashidi, A.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

Rass, J.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

Reiche, M.

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Reid, B. P. L.

C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
[Crossref]

Rettig, O.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Riley, J. R.

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

Rinke, P.

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indriect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98, 161107 (2011).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94, 191109 (2009).
[Crossref]

Rishinaramangalam, A.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High speed nonpolar InGaN/GaN LEDs for visible-light communication,” IEEE Photon. Technol. Lett. 29, 381–384 (2017).
[Crossref]

Rishinaramangalam, A. K.

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, “Threading defect elimination in GaN nanowires,” J. Mater. Res. 26, 2293–2298 (2011).
[Crossref]

A. K. Rishinaramangalam, M. N. Fairchild, S. M. U. Masabih, D. M. Shima, G. Balakrishnan, and D. F. Feezell, “In selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes,” in Conference on Lasers and Electro-Optics (CLEO) (2014).

Rodriguez, C.

S. H. Lim, Y. H. Ko, C. Rodriguez, S. H. Gong, and Y. H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light Sci. Appl. 5, e16030 (2016).
[Crossref]

Romanov, A.

A. Romanov, T. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).
[Crossref]

Romanov, A. E.

P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

Rosenauer, A.

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

Rosenthal, M.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

Rosner, S. J.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Rossbach, G.

C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
[Crossref]

Roycroft, B.

Ryu, H. Y.

H. Y. Ryu, D. S. Shin, and J. I. Shim, “Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material,” Appl. Phys. Lett. 100, 131109 (2012).
[Crossref]

Sabathil, M.

A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based light emitters,” IEEE Trans. Electron Devices 57, 79–87 (2010).
[Crossref]

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92, 261103 (2008).
[Crossref]

Sacchez-García, M. A.

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Saito, M.

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

Saito, S.

J. I. Hwang, R. Hashimoto, S. Saito, and S. Nunoue, “Development of InGaN-based red LED grown on (0001) polar surface,” Appl. Phys. Express 7, 071003 (2014).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11, 628–631 (2014).
[Crossref]

Sakong, T.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

Sands, T. D.

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

Sang, L. W.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103, 014908 (2008).
[Crossref]

Sanga, D.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Sano, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Sarkissian, R.

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

Satio, M.

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

Sato, H.

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

Schaake, C.

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

Schade, L.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Schimpke, T.

C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Schmidt, G.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Schmidt, M. C.

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

Scholz, F.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

T. Meisch, M. Alimoradi-Jazi, M. Klein, and F. Scholz, “(201) MOVPE and HVPE GaN grown on 2 inch patterned sapphire substrates,” Phys. Status Solidi C 11, 537–540 (2014).
[Crossref]

F. Scholz, “Semipolar GaN grown on foreign substrates: a review,” Semicond. Sci. Technol. 27, 024002 (2012).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Schubert, E. F.

J. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photon. Rev. 7, 408–421 (2013).
[Crossref]

G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[Crossref]

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

Schubert, M. F.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91, 183507 (2007).
[Crossref]

Schwaiger, S.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Schwarz, U.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

Schwarz, U. T.

C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Senoh, M.

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

Seo, Y. G.

D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
[Crossref]

Seong, H. K.

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

Shahmohammadi, M.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Shan, Q.

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

Sharma, R.

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photon-enhanced chemical wet etching,” Jpn. J. Appl. Phys. 43, L637–L639 (2004).
[Crossref]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]

Sharma, S. K.

D. S. Kim, S. Lee, D. Y. Kim, S. K. Sharma, S. M. Hwang, and Y. G. Seo, “Highly stable blue-emission in semipolar (112) InGaN/GaN multi-quantum well light-emitting diode,” Appl. Phys. Lett. 103, 021111 (2013).
[Crossref]

Shchekin, O. B.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Shen, C.

Shen, Y. C.

Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
[Crossref]

Shen, Y. J.

C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
[Crossref]

Shields, P.

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Shields, P. A.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
[Crossref]

Shih, P. Y.

Shim, H.

G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[Crossref]

Shim, J. I.

H. Y. Ryu, D. S. Shin, and J. I. Shim, “Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material,” Appl. Phys. Lett. 100, 131109 (2012).
[Crossref]

Shima, D. M.

A. K. Rishinaramangalam, M. Nami, M. N. Fairchild, D. M. Shima, G. Balakrishnan, S. Brueck, and D. F. Feezell, “Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire,” Appl. Phys. Express 9, 032101 (2016).
[Crossref]

A. K. Rishinaramangalam, M. N. Fairchild, S. M. U. Masabih, D. M. Shima, G. Balakrishnan, and D. F. Feezell, “In selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes,” in Conference on Lasers and Electro-Optics (CLEO) (2014).

Shin, D. S.

H. Y. Ryu, D. S. Shin, and J. I. Shim, “Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material,” Appl. Phys. Lett. 100, 131109 (2012).
[Crossref]

Si, Z.

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

Simin, G.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Sirenko, A. A.

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Smith, D. J.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
[Crossref]

Smith, M. L.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

Sonada, J.

Y. Zhao, J. Sonada, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (10) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
[Crossref]

Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device structures for bright blue semipolar (10) light emitting diodes via metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 49, 070206 (2010).
[Crossref]

Sone, C.

G. B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[Crossref]

Y. J. Hong, C. H. Lee, A. Yoon, M. Kim, H. K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G. C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. 23, 3284–3288 (2011).
[Crossref]

D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M. H. Kim, and C. Sone, “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 99, 041112 (2011).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

Song, D. Y.

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, and M. Holtz, “Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy,” J. Appl. Phys. 104, 103530 (2008).
[Crossref]

Song, J.

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Sonobe, M.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[Crossref]

Sonoda, J.

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

Sota, T.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Sou, K. P.

Y. J. Li, J. R. Chang, S. P. Chang, K. P. Sou, Y. J. Cheng, H. C. Kuo, and C. Y. Chuang, “InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes,” Appl. Phys. Express 8, 042101 (2015).
[Crossref]

S. P. Chang, J. R. Chang, K. P. Sou, M. C. Liu, Y. J. Cheng, H. C. Kuo, and C. Y. Chang, “Electrically driven green, olivine, and amber color nanopyramid light emitting diodes,” Opt. Express 21, 23030–23035 (2013).
[Crossref]

S. P. Chang, K. P. Sou, C. H. Chen, Y. J. Cheng, J. K. Huang, C. H. Lin, H. C. Kuo, C. Y. Chang, and W. F. Hsieh, “Lasing action in gallium nitride quasicrystal nanorod arrays,” Opt. Express 20, 12457–12462 (2012).
[Crossref]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100, 261103 (2012).
[Crossref]

Speck, J. S.

C. Shen, C. Lee, T. K. Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. EI-Desouki, and B. S. Ooi, “High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth,” Opt. Express 24, 20281–20286 (2016).
[Crossref]

K. Gelzinyte, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (201) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117, 023111 (2015).
[Crossref]

C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
[Crossref]

Y. Zhao, R. M. Farrell, Y. R. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53, 100206 (2014).
[Crossref]

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electricali: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110, 177406 (2013).
[Crossref]

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

R. M. Farrell, E. C. Yong, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27, 024001 (2012).
[Crossref]

P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stress relaxation and critical thickness for misfit dislocation formation in (100) and (30) InGaN/GaN heteroepitaxy,” Appl. Phys. Lett. 100, 171917 (2012).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. B 30, 041513 (2012).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, C. S. Gallinat, R. W. Davis, M. Cornish, K. Fujito, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates,” Appl. Phys. Lett. 96, 231907 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

R. M. Farrell, D. A. Haeger, X. Chen, M. Iza, A. Hirai, K. M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” J. Cryst. Growth 313, 1–7 (2010).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-lane InGaN light emitting diodes,” Appl. Phys. Lett. 94, 261108 (2009).
[Crossref]

M. B. Mclaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, “Basal plane stacking-fault related anisotropy in x-ray rocking curve widths of m-plane GaN,” Jpn. J. Appl. Phys. 47, 5429–5431 (2008).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High power and high external efficincey m-plane light emitting diodes,” Jpn. J. Appl. Phys. 46, L126–L128 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito, “Formation and reduction of pyramidal hillocks on m-plane {100} GaN,” Appl. Phys. Lett. 91, 191906 (2007).
[Crossref]

T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, “A GaN bulk crystal with improved structural quality grown by the ammonothermal method,” Nat. Mater. 6, 568–571 (2007).
[Crossref]

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Growth and characterization of N-polar In Ga N/Ga N multiquantum wells,” Appl. Phys. Lett. 90, 191908 (2007).
[Crossref]

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

A. Romanov, T. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).
[Crossref]

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, “Improved quality (110) a-plane GaN with sidewall lateral epitaxial overgrowth,” Appl. Phys. Lett. 88, 061908 (2006).
[Crossref]

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44, L173–L175 (2005).
[Crossref]

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Šstka, A.

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Stach, E. A.

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

Stark, C. J. M.

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
[Crossref]

Steib, F.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Stephenson, G. B.

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Stewart, L. S.

T. W. Yeh, Y. T. Lin, B. Ahn, L. S. Stewart, D. P. Dapkus, and S. R. Nutt, “Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets,” Appl. Phys. Lett. 100, 033119 (2012).
[Crossref]

T. W. Yeh, Y. T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O’Brien, B. Ahn, and S. R. Nutt, “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. 12, 3257–3262 (2012).
[Crossref]

Stoll, I.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Storm, D. F.

D. F. Storm, M. T. Hardy, D. S. Katzer, N. Nepal, B. P. Downey, D. J. Meyer, T. O. McConkie, L. Zhou, and D. J. Smith, “Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates,” J. Cryst. Growth 456, 121–132 (2016).
[Crossref]

Strassburg, M.

C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. 121, 025701 (2017).
[Crossref]

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

Straßburg, M.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Strassbury, M.

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

Strehle, S.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

Streiffer, S. K.

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Su, C. Y.

Subramania, G.

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Subramania, G. S.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

Sumitomo, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Sun, Q.

B. Leung, Y. Zhang, C. D. Yerino, J. Han, Q. Sun, Z. Chen, S. Lester, K. Y. Liao, and Y. L. Li, “Optical emission characteristics of semipolar GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire,” Semicond. Sci. Technol. 27, 024016 (2012).
[Crossref]

Sun, W. H.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Sun, X. Y.

S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6, 1808–1811 (2006).
[Crossref]

Sun, Y. H.

Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22, 045202 (2011).
[Crossref]

Swartzentruber, B. S.

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

Tadatomo, K.

N. Okada and K. Tadatomo, “Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates,” Semicond. Sci. Technol. 27, 024003 (2012).
[Crossref]

N. Okada, H. Oshita, A. Kurisu, and K. Tadatomo, “Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates,” Jpn. J. Appl. Phys. 50, 035602 (2011).
[Crossref]

N. Okada, H. Oshita, K. Yamane, and K. Tadatomo, “High-quality {201} GaN layers on patterned sapphire substrate with wide-terrace,” Appl. Phys. Lett. 99, 242103 (2011).
[Crossref]

N. Okada, A. Kurisu, K. Murakami, and K. Tadatomo, “Growth of semipolar (112) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate,” Appl. Phys. Express 2, 091001 (2009).
[Crossref]

Takahashi, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

Takasu, H.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane single crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[Crossref]

Talin, A. A.

A. Armstrong, G. T. Wang, and A. A. Talin, “Depletion-mode photoconductivity study of deep levels in GaN nanowires,” J. Electron. Mater. 38, 484–489 (2009).
[Crossref]

A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
[Crossref]

A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92, 093105 (2008).
[Crossref]

Tanaka, S.

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in thermal droop using thick single-quantum-well structure in semipolar (20) blue light-emitting diodes,” Appl. Phys. Express 5, 102103 (2012).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar InGaN/GaN light-emitting diodes with low efficiency droop up at 200A/cm2,” Appl. Phys. Express 4, 082104 (2011).
[Crossref]

Tang, T. Y.

H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
[Crossref]

Taylor, R. A.

C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102, 111906 (2013).
[Crossref]

Tchernycheva, M.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Thalmair, J.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Thompson, C.

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Thonke, K.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

Tian, P.

Ting, S. Y.

Tokuyama, S.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Trampert, A.

T. Krause, M. Hanke, Z. Cheng, M. Niehle, A. Trampert, M. Rosenthal, M. Burghammer, J. Ledig, J. Hartmann, and H. Zhou, “Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In, Ga) N/GaN rod light-emitting diodes,” Nanotechnology 27, 325707 (2016).
[Crossref]

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sacchez-García, and E. Calleja, “Selective area growth and characterization of GaN nanocolumns with and without an InGaN insertion on semipolar (112) GaN templates,” Appl. Phys. Lett. 103, 241905 (2013).
[Crossref]

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

E. Calleja, A. Bengoechea-Encabo, S. Albert, M. A. Sacchez-García, D. Lopez-Romero, A. Trampert, U. Jahn, F. Bertram, and J. Christen, “Selective area growth of III-nitrides on polar and semipolar orientations: from light emitters to pseudo-substrates,” in IEEE Photonics Society Summer Topical Meeting Series (2014), p. 34.

Tran, C. A.

X. Ni, U. Ozgur, A. A. Baski, H. Morkoc, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (112) semipolar GaN on (100) m-plane sapphire by metalorgainic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).
[Crossref]

Trivellin, N.

M. Meneghini, N. Trivellin, G. Meneghesso, and E. Zanoni, “A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes,” J. Appl. Phys. 106, 114508 (2009).
[Crossref]

Tsao, J. Y.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

Tu, C. G.

Tu, C.-G.

X. Zhang, C.-G. Tu, Y.-W. Kiang, and C. Yang, “Structure variation of a sidewall quantum well on a GaN nanorod,” Nanotechnology 28, 045203 (2017).
[Crossref]

Tyagi, A.

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

P. S. Hsu, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Blue InGaN/GaN laser diodes grown on (30) free-standing GaN substrates,” Phys. Status Solidi C 8, 2390–2392 (2011).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency semipolar InGaN light emitting diodes,” J. Light Visual Environ. 32, 107–110 (2008).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate,” Appl. Phys. Lett. 90, 233504 (2007).
[Crossref]

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (112) bulk GaN substrate,” Electron. Lett. 43, 825–827 (2007).
[Crossref]

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Satio, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate,” Phys. Status Solidi (RRL) 1, 162–164 (2007).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High brightness, violet InGaN/GaN light emitting diodes on semipolar (10) bulk GaN substrates,” Jpn. J. Appl. Phys. 46, L129–L131 (2007).
[Crossref]

Ueda, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {112} GaN bulk substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[Crossref]

Uedono, A.

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Ymaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, “Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors,” Nat. Mater. 5, 810–816 (2006).
[Crossref]

Ueno, M.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, and S. Tokuyama, “531  nm green lasing of InGaN based laser diodes on semipolar {201} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Uherek, F.

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Vajargah, S. H.

E. D. Le Boulbar, P. R. Edwards, S. H. Vajargah, I. Griffiths, I. Gîrgel, P. M. Coulon, D. Cherns, R. W. Martin, C. J. Humphreys, C. R. Bowen, D. W. E. Allsopp, and P. A. Shields, “Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods,” Cryst. Growth Des. 16, 1907–1916 (2016).
[Crossref]

Vampola, K. J.

K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates,” Phys. Status Solidi A 206, 200–202 (2009).
[Crossref]

Van de Walle, C. G.

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indriect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98, 161107 (2011).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94, 191109 (2009).
[Crossref]

Varangis, P.

S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, “Threading defect elimination in GaN nanowires,” J. Mater. Res. 26, 2293–2298 (2011).
[Crossref]

Varghese, T.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Veit, P.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

M. Müller, P. Veit, F. F. Krause, T. Schimpke, S. Metzner, F. Bertram, T. Mehrtens, K. Müller-Caspary, A. Avramescu, M. Strassbury, A. Rosenauer, and J. Christen, “Nanoscopic insights into InGaN/GaN core-shell nanorods: structure, composition, and luminescence,” Nano Lett. 16, 5340–5346 (2016).
[Crossref]

Vescovi, G.

M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, “InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact,” Nano Lett. 14, 2456–2465 (2014).
[Crossref]

Vierheilig, C.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Voyles, P. M.

A. B. Yankovichi, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, U. Ozgur, H. Morkoc, and P. M. Voyles, “Hexagonal-based pyramid void defects in GaN and InGaN,” J. Appl. Phys. 111, 023517 (2012).
[Crossref]

Waag, A.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-Klein, D. Bichler, F. Zwaschka, J. S. Knyrim, B. Huckenbeck, B. Max, M. Muller, P. Veit, F. Bertram, J. Christen, J. Hartmann, A. Waag, H. J. Lugauer, and M. Strassburg, “Phosphor-converted white light from blue-emitting InGaN microrod LEDs,” Phys. Status Solidi A 213, 1577–1584 (2016).
[Crossref]

S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys. 111, 071101 (2012).
[Crossref]

Waldron, J.

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).

Walterweit, P.

P. Walterweit, P. O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Wand, M. T.

Wang, C. Y.

Wang, D.

B. Leung, D. Wang, Y. S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi B 253, 23–35 (2016).
[Crossref]

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Wang, G.

J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, and G. Wang, “Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes,” Appl. Phys. Express 6, 072102 (2013).
[Crossref]

Wang, G. T.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

C. Li, S. Liu, T. S. Luk, J. J. Figiel, I. Brener, S. Brueck, and G. T. Wang, “Intrinsic polarization control in rectangular GaN nanowire lasers,” Nanoscale 8, 5682–5687 (2016).
[Crossref]

S. Liu, C. Li, J. J. Figiel, S. R. Brueck, I. Brener, and G. T. Wang, “Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure,” Nanoscale 7, 9581–9588 (2015).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs,” Phys. Status Solidi A 211, 748–751 (2014).
[Crossref]

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

J. J. Wierer, Q. M. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, “III-nitride core-shell nanowire arrayed solar cells,” Nanotechnology 23, 194007 (2012).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19, 25528–25534 (2011).
[Crossref]

Q. M. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10, 1554–1558 (2010).
[Crossref]

Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
[Crossref]

A. Armstrong, G. T. Wang, and A. A. Talin, “Depletion-mode photoconductivity study of deep levels in GaN nanowires,” J. Electron. Mater. 38, 484–489 (2009).
[Crossref]

A. Armstrong, Q. Li, K. H. A. Bogart, Y. Lin, G. T. Wang, and A. A. Talin, “Deep level optical spectroscopy of GaN nanorods,” J. Appl. Phys. 106, 053712 (2009).
[Crossref]

Q. Li, Y. Lin, J. R. Creighton, J. J. Figiel, and G. T. Wang, “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Adv. Mater. 21, 2416–2420 (2009).
[Crossref]

A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92, 093105 (2008).
[Crossref]

Q. Li and G. T. Wang, “Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films,” Appl. Phys. Lett. 93, 043119 (2008).
[Crossref]

Wang, H.

Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971–17981 (2017).
[Crossref]

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Wang, H. M.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Wang, J.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, “Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 97, 133507 (2010).
[Crossref]

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degrees of carrier localization,” Appl. Phys. Lett. 97, 201112 (2010).
[Crossref]

Wang, L.

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degrees of carrier localization,” Appl. Phys. Lett. 97, 201112 (2010).
[Crossref]

Wang, R. V.

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, and C. Thompson, “Indium adsorption on GaN under metal-organic chemical vapor deposition conditions,” Appl. Phys. Lett. 89, 161915 (2006).
[Crossref]

Wang, T.

T. Wang, “Topical review: development of overgrown semipolar GaN for high efficiency green/yellow emission,” Semicond. Sci. Technol. 31, 093003 (2016).
[Crossref]

Wang, W.

C. Liu, A. Šstka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2, 121002 (2009).
[Crossref]

Wang, X.

S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6, 1808–1811 (2006).
[Crossref]

Wang, Y.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103, 014908 (2008).
[Crossref]

Wang, Z. G.

M. R. Zhang, Q. M. Jiang, S. H. Zhang, Z. G. Wang, F. Hou, and G. B. Pan, “Fabrication of gallium nitride nanowires by metal-assisted photochemical etching,” Appl. Surf. Sci. 422, 216–220 (2017).
[Crossref]

Wang, Z. L.

F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. Dong, Y. Ding, Z. L. Wang, and C. M. Lieber, “Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers,” Nat. Mater. 7, 701–706 (2008).
[Crossref]

Watanabe, S.

Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91, 141101 (2007).
[Crossref]

Watson, I. M.

S. Rajbhandari, J. J. D. Mckendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multigigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32, 023001 (2017).
[Crossref]

Watson, S.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Wehmann, H. H.

J. Hartmann, F. Steib, H. Zhou, J. Ledig, S. Fündling, F. Albrecht, T. Schimpke, A. Avramescu, T. Varghese, H. H. Wehmann, M. Straßburg, H. J. Hugauer, and A. Waag, “High aspect ratio GaN fin microstructures with nonpolar sidewalls by continuous mode metalorganic vapor phase epitaxy,” Cryst. Growth Des. 16, 1458–1462 (2016).
[Crossref]

Wei, T.

B. Fu, Y. Cheng, Z. Si, T. Wei, X. Zeng, G. Yuan, Z. Liu, H. Lu, X. Yi, J. Li, and J. Wang, “Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,” RSC Adv. 5, 100646 (2015).
[Crossref]

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

Wei, X.

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

Weisbuch, C.

C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi A 212, 899–913 (2015).
[Crossref]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electricali: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110, 177406 (2013).
[Crossref]

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

Wen, C. Y.

F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5, 2287–2291 (2005).
[Crossref]

Wernicke, T.

R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kenissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, and F. Scholz, “Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells,” Phys. Status Solidi B 253, 180–185 (2016).
[Crossref]

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl, “Semipolar GaN grown on m-plane sapphire using MOVPE,” Phys. Status Solidi C 5, 1815–1817 (2008).
[Crossref]

Westlake, K. R.

Wetzel, C.

M. T. Durniak, A. S. Bross, D. Elsaesser, A. Chaudhuri, M. L. Smith, A. A. Allerman, S. C. Lee, S. R. J. Brueck, and C. Wetzel, “Green emitting cubic GaInN/GaN quantum well stripes on micropatterned Si(001) and their strain analysis,” Adv. Electron. Mater. 2, 1500327 (2016).
[Crossref]

S. C. Lee, N. Youngblood, Y. B. Jiang, E. J. Peterson, C. J. M. Stark, T. Detchprohm, C. Wetzel, and S. R. J. Brueck, “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition,” Appl. Phys. Lett. 107, 231905 (2015).
[Crossref]

C. J. M. Stark, T. Detchprohm, S. C. Lee, Y. B. Jiang, S. R. J. Brueck, and C. Wetzel, “Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100),” Appl. Phys. Lett. 103, 232107 (2013).
[Crossref]

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, and T. P. Chow, “Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” Appl. Phys. Lett. 102, 192107 (2013).

Weyers, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27, 024014 (2012).
[Crossref]

T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl, “Semipolar GaN grown on m-plane sapphire using MOVPE,” Phys. Status Solidi C 5, 1815–1817 (2008).
[Crossref]

White, I. H.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Wierer, J. J.

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emittiing at 530–590  nm with AlGaN interlayers,” J. Cryst. Growth 415, 57–64 (2015).
[Crossref]

G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs,” Phys. Status Solidi A 211, 748–751 (2014).
[Crossref]

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Ficher, D. D. Kolesker, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2, 809–836 (2014).
[Crossref]

J. R. Riley, S. Padalkar, Q. M. Li, P. Lu, D. D. Koleske, J. J. Wierer, G. T. Wang, and L. J. Lauhon, “Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array,” Nano Lett. 13, 4317–4325 (2013).
[Crossref]

J. J. Wierer, Q. M. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, “III-nitride core-shell nanowire arrayed solar cells,” Nanotechnology 23, 194007 (2012).
[Crossref]

Wildeson, I. H.

I. H. Wildeson, R. Colby, D. A. Ewoldt, Z. Liang, D. N. Zakharov, N. J. Zaluzec, R. W. Garcia, E. A. Stach, and T. D. Sands, “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 108, 044303 (2010).
[Crossref]

Williams, M. R. C.

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

Wright, J. B.

C. Li, J. B. Wright, S. Liu, P. Lu, J. J. Figiel, B. Leung, W. W. Chow, I. Brener, D. D. Koleske, T. S. Luk, D. F. Feezell, S. R. J. Brueck, and G. T. Wang, “Nonpolar InGaN/GaN core-shell single nanowire lasers,” Nano Lett. 17, 1049–1055 (2017).
[Crossref]

S. Boubanga-Tombet, J. B. Wright, P. Lu, M. R. C. Williams, C. Li, G. T. Wang, and R. P. Prasankumar, “Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires,” ACS Photon. 3, 2237–2242 (2016).
[Crossref]

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Q. Li, J. B. Wright, W. W. Chow, T. S. Luk, I. Brener, L. F. Lester, and G. T. Wang, “Single-mode GaN nanowire lasers,” Opt. Express 20, 17873–17879 (2012).
[Crossref]

Wu, C. S.

H. S. Chen, D. M. Yeh, Y. C. Lu, C. Y. Chen, C. F. Huang, T. Y. Tang, C. C. Yang, C. S. Wu, and C. D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454–1458 (2006).
[Crossref]

Wu, F.

M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photon. Technol. Lett. 26, 43–46 (2014).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6, 062102 (2013).
[Crossref]

Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Suppressing void defects in long wavelength semipolar (20) InGaN quantum wells by growth rate optimization,” Appl. Phys. Lett. 102, 091905 (2013).
[Crossref]

R. M. Farrell, E. C. Yong, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27, 024001 (2012).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power low-efficiency-droop semipolar single-quantum-well blue light-emitting diodes,” Appl. Phys. Express 5, 062103 (2012).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109, 103522 (2011).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Lattice tilt and misfit dislocations in (112) semipolar GaN heteroepitaxy,” Appl. Phys. Express 3, 011004 (2010).
[Crossref]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96, 231912 (2010).
[Crossref]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905 (2009).
[Crossref]

M. B. Mclaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, “Basal plane stacking-fault related anisotropy in x-ray rocking curve widths of m-plane GaN,” Jpn. J. Appl. Phys. 47, 5429–5431 (2008).
[Crossref]

T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, “A GaN bulk crystal with improved structural quality grown by the ammonothermal method,” Nat. Mater. 6, 568–571 (2007).
[Crossref]

B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, “Improved quality (110) a-plane GaN with sidewall lateral epitaxial overgrowth,” Appl. Phys. Lett. 88, 061908 (2006).
[Crossref]

Wu, H. M.

Wu, K.

K. Wu, T. Wei, H. Zheng, D. Lan, X. Wei, Q. Hu, H. Lu, J. Wang, Y. Luo, and J. Li, “Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,” J. Appl. Phys. 115, 123101 (2014).
[Crossref]

Wu, X. H.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72, 692–694 (1998).
[Crossref]

Wu, Y.

S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100, 054314 (2006).
[Crossref]

Wu, Y. R.

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

Y. Zhao, R. M. Farrell, Y. R. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53, 100206 (2014).
[Crossref]

C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
[Crossref]

Wu, Z.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Wunderer, T.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248, 549–560 (2011).
[Crossref]

F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen, “GaInN-based LED structures on selectively grown semipolar crystal facets,” Phys. Status Solidi A 207, 1407–1413 (2010).
[Crossref]

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, and F. Scholz, “Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction,” Appl. Phys. Lett. 92, 123106 (2008).
[Crossref]

Xie, E.

R. X. G. Ferreira, E. Xie, J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,” IEEE Photon. Technol. Lett. 28, 2023–2026 (2016).
[Crossref]

Xie, Z.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Xiong, K.

B. Leung, D. Wang, Y. S. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, and J. Han, “Semipolar (201) GaN and InGaN quantum wells on sapphire substrates,” Appl. Phys. Lett. 104, 262105 (2014).
[Crossref]

Xiu, X.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Xu, H.

C. Li, S. Liu, A. Hurtado, J. B. Wright, H. Xu, T. S. Luk, J. J. Figiel, I. Brener, S. R. Brueck, and G. T. Wang, “Annular-shaped emission from gallium nitride nanotube lasers,” ACS Photon. 2, 1025–1029 (2015).
[Crossref]

J. B. Wright, S. Campione, S. Liu, J. A. Martinez, H. Xu, T. S. Luk, Q. Li, G. T. Wang, B. S. Swartzentruber, L. F. Lester, and I. Brener, “Distributed feedback gallium nitride nanowire lasers,” Appl. Phys. Lett. 104, 041107 (2014).
[Crossref]

J. B. Wright, S. Liu, G. T. Wang, Q. Li, A. Benz, D. D. Koleske, P. Lu, H. Xu, L. Lester, T. S. Luk, I. Brener, and G. Subramania, “Multi-colour nanowire photonic crystal laser pixels,” Sci. Rep. 3, 2982 (2013).
[Crossref]

Xu, J.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008).
[Crossref]

Xu, J. M.

L. Chen, A. Yin, J. S. Im, A. V. Nurmikko, J. M. Xu, and J. Han, “Fabrication of 50–100  nm patterned InGaN blue light emitting heterostructures,” Phys. Status Solidi A 188, 135–138 (2001).
[Crossref]

Xu, Q.

S. Zhang, X. Xiu, H. Wang, Q. Xu, Z. Wu, X. Hua, P. Chen, Z. Xie, B. Liu, Y. Zhou, P. Han, R. Zhang, and Y. Zheng, “Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template,” Mater. Lett. 180, 298–301 (2016).
[Crossref]

Yakovlev, E. V.

M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Y. Evstratov, and S. Y. Karpov, “Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity,” Appl. Phys. Lett. 97, 051904 (2010).
[Crossref]

Yamada, H.

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46, L960–L962 (2007).
[Crossref]

Yamamoto, S.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3, 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semiopolar (201) GaN substrates,” Appl. Phys. Express 3, 122102 (2010).
[Crossref]

Yamane, K.

N. Okada, H. Oshita, K. Yamane, and K. Tadatomo, “High-quality {201} GaN layers on patterned sapphire substrate with wide-terrace,” Appl. Phys. Lett. 99, 242103 (2011).
[Crossref]

Yan, Q.

C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187–1189 (2015).
[Crossref]

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100, 201108 (2012).
[Crossref]

Yang, C.

X. Zhang, C.-G. Tu, Y.-W. Kiang, and C. Yang, “Structure variation of a sidewall quantum well on a GaN nanorod,” Nanotechnology 28, 045203 (2017).
[Crossref]

Yang, C. C.

Yang, H. C.

C. K. Li, H. C. Yang, T. C. Hsu, Y. J. Shen, A. S. Liu, and Y. R. Wu, “Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes,” J. Appl. Phys. 113, 183104 (2013).
[Crossref]

Yang, J. W.

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, and M. A. Khan, “GaN homoepitaxy on freestanding (100) oriented GaN substrates,” Appl. Phys. Lett. 81, 3194–3196 (2002).
[Crossref]

Ya