Abstract

We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor (Ge and Si) plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity. The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at 589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.

© 2016 Chinese Laser Press

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription