Abstract

Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) are emerging as promising devices for low-cost applications owing to their low manufacturing cost. Since LTPS TFTs can be fabricated on the insulating substrates such as plastic or glass, on-chip spiral inductors achieve high quality of characteristic. In this paper, we observed that inductors using LTPS TFT technology have a 14% higher $Q$ -factor and a 16% higher self-resonance frequency compared to corresponding CMOS-bulk technology from electromagnetic (EM) simulation. It allows compensating low trans-conductance $({g}_{m})$ of LTPS TFTs due to inherent grain boundaries (GBs) in the poly-Si channel. With the properly optimized dimension of LTPS TFT technology, we designed a low-noise amplifier (LNA) on glass substrate having a ${\rm gain}= 15.4~{{dB}}$ , noise figure $({\rm NF})=2.8~{{dB}}$ , and third-order input intercept point $({\rm IIP3})= 3.9~{{dBm}}$ at 2.4 GHz with a 2 V voltage supply. The results demonstrate that low-cost RF design with LTPS TFTs can achieve CMOS-like performance.

© 2014 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription