Abstract

In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N $_{2}$ and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm $^{2}$ V $^{-1}$ s $^{-1}$ with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology.

© 2014 IEEE

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