Abstract

We investigated the effect of nitrogen flow rate during the sputtering on the performances of tin silicon oxide (TSO) thin film transistors (TFTs) through comparing to the TFTs with different oxygen flow rates. Increasing nitrogen flow rate as well as oxygen flow rate can reduce the carrier concentration and shift turn on voltage to the positive direction, indicating that nitrogen can be a good carrier suppressor of the TSO channel layer. The oxygen vacancies can be filled with nitrogen atoms resulting in less electron donors. Correspondingly, the mobility decreases due to the percolation conduction model. Besides, the TSO channel layer is amorphous regardless of nitrogen flow rate, which is important to ensure uniformity of oxide TFTs.

© 2016 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription