Abstract

Back-channel etched (BCE) thin-film transistors (TFTs) are developed using a novel oxide semiconducting material, In-W-Zn-O (IWZO). A bi-layer structure for the IWZO oxide semiconductor layer is proposed to realize both high resistance to back-channel etching damage and high TFT mobility. The developed IWZO BCE-TFTs exhibit high mobilities of up to 20.2 ${{cm}}^{2}/{{V}}\cdot{{s}}$ .

© 2015 IEEE

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