Abstract

We investigated the carrier generation mechanism in the stacked film of fluorinated silicon nitride $({SiN}_{x}{:F})$ on InGaZnO $({IGZO/SiN}_{x}{:F})$ through post-annealing and compared its mechanism to that of the ${SiO}_{x}$ stack $({IGZO/SiO}_{x})$ . The resistivity $(\rho)$ and carrier concentration $(n)$ of two types of the stacked films through post-annealing were measured by the Hall measurement. The as-deposited ${n}^{+}$ a-IGZO film with the ${SiN}_{x}\{:F}$ stack showed $\rho$ of 3.3 $\times{ 10} ^{-3}~\Omega\cdot{cm}$ and $n$ of 1.0 $\times { 10} ^{20}~{cm}^{-3}$ , which was approximately one order of magnitude higher than that with the ${SiO}_{x}$ stack. X-ray photoelectron spectroscopy (XPS) analyses indicated that ${\rm V}_{\rm O}$ defect was the main source of free electrons in both of the as-deposited ${IGZO/SiO}_{x}$ and ${IGZO/SiN}_{x}{:F}$ stacks. After post-annealing at 300 $^{\circ}{C}$ , the carrier generation mechanism in the ${IGZO/SiN}_{x}{:F}$ stack changed from defects related to ${\rm V}_{\rm O}$ to the fluorine doping. XPS depth profile analyses also revealed that fluorine in IGZO film passivated ${\rm V}_{\rm O}$ and substituted metal–oxygen to thermally stable metal–fluorine (M-F) bonds simultaneously. As a consequence, the thermal stability of $n$ in the ${IGZO/SiN}_{x}{:F}$ stack drastically improved, as compared with that in the ${IGZO/SiO}_{x}$ stack. Therefore, we consider that this fluorine doping method in IGZO is suitable for achieving self-aligned thin-film transistors to improve operation speed of system-in-display.

© 2015 IEEE

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