Abstract

This paper presents a study concerning the role of channel length scaling on IGZO TFT technology benchmark parameters, which are fabricated at temperatures not exceeding $180\, ^{\circ}$ C. The parameters under investigation are unity current-gain cutoff frequency, intrinsic voltage-gain, and on-resistance of the bottom-gate IGZO TFTs. As the channel length varies from 160 to 3 $\mu$ m, the measured cutoff frequency increases from 163 ${\rm kHz}$ to 111.5 ${\rm MHz}$ , which is a superior value compared to the other competing low-temperature thin-film technologies, such as organic TFTs. On the other hand, for the same transistor dimensions, the measured intrinsic voltage-gain is changing from 165 to 5.3 and the on-resistance is decreasing from 1135.6 to 26.1 k $\Omega$ . TFTs with smaller channel length (3 $\mu$ m) have shown a highly negative turn-on voltage and hump in the subthreshold region, which can be attributed to short channel effects. The results obtained here, together with their interpretation based on device physics, provide crucial information for accurate IC design, enabling an adequate selection of device dimensions to maximize the performance of different circuit building blocks assuring the multifunctionality demanded by system-on-panel concepts.

© 2016 IEEE

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