Abstract

A new accurate voltage-programmed pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays is presented. Composed of three TFTs and one storage capacitor, the proposed pixel circuit is implemented both in a-Si and a-IGZO TFT technologies for the same pixel size for fair comparison. The simulation result for the a-Si-based design shows that, during a programming time of ${{90}}~\mu {s}$ , the pixel circuit was able to compensate for a 3 V threshold voltage ( $V_{\rm th}$ ) shift of the drive TFT with almost no error. In contrast, the a-IGZO-based pixel circuit, has a larger current error (of around 8%), despite its proven three-fold higher speed.

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  1. G. R. Chaji, A. Nathan, "LTPS vs oxide backplanes for AMOLED displays: System design considerations and compensation techniques," SID Symp. Dig. Tech. Papers (2014) pp. 153-156.
  2. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
  3. J. Jang, M. Mativenga, J. Choi, "Stabilities of TFTs under bias-stress," ECS Trans. 33, 31-39 (2010).
  4. S. Jeon, "Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays," IEEE J. Solid-State. Circuits 39, 1477-1486 (2004).
  5. A. Nathan, A. Kumar, K. Sakariya, P. Servati, S. Sambandan, D. Striakhilev, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic," IEEE J. Solid-State. Circuits 39, 1477-1486 (2004).
  6. J. Goh, H.-J. Chung, J. Jang, "A new pixel circuit for active matrix organic light emitting diodes," IEEE Electron Device Lett. 23, 544-546 (2002).
  7. J. Goh, J. Jang, K. Cho, C. Kim, "A new a-Si:H thin-film transistor pixel circuits for active matrix organic light-emitting diodes," IEEE Electron Device. Lett. 24, 583-585 (2003).
  8. G. R. Chaji, P. Servati, A. Nathan, "driving scheme for stable operation of the 2-TFT a-Si AMOLED pixel," Electron. Lett. 41, 499500 (2005).
  9. B.-H. You, J.-H. Lee, M.-K. Han, "Polarity balanced driving scheme to suppress the degradation of Vth in a-Si:H TFT due to the positive gate bias stress for AMOLED," IEEE J. Display Technol. 3, 40-44 (2007).
  10. A. Nathan, R. Chaji, S-J. Ashtiani, "Driving schemes for a-Si and LTPS AMOLED displays," IEEE/OSA J. Display Technol. 1, 267-277 (2005).
  11. M. Bagheri, S. J. Ashtiani, A. Nathan, "A fast driving scheme voltage-programmed pixel structure for AMOLED displays," IEEE J. Display Technol. 6, 191-195 (2010).
  12. J. Jacobs, D. Hente, E. Waffenschmidt, "Driving for OLEDs," IEEE 42nd Industry Appl. Conf. (2007) pp. 1147-1152.
  13. P. Servati, D. Striakhilev, A. Nathan, "Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors," IEEE Trans. Electron Devices 50, 2227-2235 (2003).
  14. S. Lee, "Modeling sub-threshold current-voltage characteristics in thin film transistors," IEEE J. Display Technol. 9, (2013).
  15. S. Lee, "Late news paper: Modeling current voltage behaviour in oxide TFTs combining trap limited conduction with percolation," 2013 SID Int. Symp. Dig. Tech. Papers (2013) pp. 2225.
  16. S. Lee, "Analytical field-effect method for sub-gap states extraction in amorphous semiconductor thin film transistors," IEEE Electron Device Lett. 33, 1006-1008 (2012).

2013 (1)

S. Lee, "Modeling sub-threshold current-voltage characteristics in thin film transistors," IEEE J. Display Technol. 9, (2013).

2012 (1)

S. Lee, "Analytical field-effect method for sub-gap states extraction in amorphous semiconductor thin film transistors," IEEE Electron Device Lett. 33, 1006-1008 (2012).

2010 (2)

M. Bagheri, S. J. Ashtiani, A. Nathan, "A fast driving scheme voltage-programmed pixel structure for AMOLED displays," IEEE J. Display Technol. 6, 191-195 (2010).

J. Jang, M. Mativenga, J. Choi, "Stabilities of TFTs under bias-stress," ECS Trans. 33, 31-39 (2010).

2007 (1)

B.-H. You, J.-H. Lee, M.-K. Han, "Polarity balanced driving scheme to suppress the degradation of Vth in a-Si:H TFT due to the positive gate bias stress for AMOLED," IEEE J. Display Technol. 3, 40-44 (2007).

2005 (2)

A. Nathan, R. Chaji, S-J. Ashtiani, "Driving schemes for a-Si and LTPS AMOLED displays," IEEE/OSA J. Display Technol. 1, 267-277 (2005).

G. R. Chaji, P. Servati, A. Nathan, "driving scheme for stable operation of the 2-TFT a-Si AMOLED pixel," Electron. Lett. 41, 499500 (2005).

2004 (3)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

S. Jeon, "Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays," IEEE J. Solid-State. Circuits 39, 1477-1486 (2004).

A. Nathan, A. Kumar, K. Sakariya, P. Servati, S. Sambandan, D. Striakhilev, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic," IEEE J. Solid-State. Circuits 39, 1477-1486 (2004).

2003 (2)

J. Goh, J. Jang, K. Cho, C. Kim, "A new a-Si:H thin-film transistor pixel circuits for active matrix organic light-emitting diodes," IEEE Electron Device. Lett. 24, 583-585 (2003).

P. Servati, D. Striakhilev, A. Nathan, "Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors," IEEE Trans. Electron Devices 50, 2227-2235 (2003).

2002 (1)

J. Goh, H.-J. Chung, J. Jang, "A new pixel circuit for active matrix organic light emitting diodes," IEEE Electron Device Lett. 23, 544-546 (2002).

ECS Trans. (1)

J. Jang, M. Mativenga, J. Choi, "Stabilities of TFTs under bias-stress," ECS Trans. 33, 31-39 (2010).

Electron. Lett. (1)

G. R. Chaji, P. Servati, A. Nathan, "driving scheme for stable operation of the 2-TFT a-Si AMOLED pixel," Electron. Lett. 41, 499500 (2005).

IEEE Electron Device Lett. (2)

J. Goh, H.-J. Chung, J. Jang, "A new pixel circuit for active matrix organic light emitting diodes," IEEE Electron Device Lett. 23, 544-546 (2002).

S. Lee, "Analytical field-effect method for sub-gap states extraction in amorphous semiconductor thin film transistors," IEEE Electron Device Lett. 33, 1006-1008 (2012).

IEEE Electron Device. Lett. (1)

J. Goh, J. Jang, K. Cho, C. Kim, "A new a-Si:H thin-film transistor pixel circuits for active matrix organic light-emitting diodes," IEEE Electron Device. Lett. 24, 583-585 (2003).

IEEE J. Display Technol. (3)

B.-H. You, J.-H. Lee, M.-K. Han, "Polarity balanced driving scheme to suppress the degradation of Vth in a-Si:H TFT due to the positive gate bias stress for AMOLED," IEEE J. Display Technol. 3, 40-44 (2007).

M. Bagheri, S. J. Ashtiani, A. Nathan, "A fast driving scheme voltage-programmed pixel structure for AMOLED displays," IEEE J. Display Technol. 6, 191-195 (2010).

S. Lee, "Modeling sub-threshold current-voltage characteristics in thin film transistors," IEEE J. Display Technol. 9, (2013).

IEEE J. Solid-State. Circuits (2)

S. Jeon, "Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays," IEEE J. Solid-State. Circuits 39, 1477-1486 (2004).

A. Nathan, A. Kumar, K. Sakariya, P. Servati, S. Sambandan, D. Striakhilev, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic," IEEE J. Solid-State. Circuits 39, 1477-1486 (2004).

IEEE Trans. Electron Devices (1)

P. Servati, D. Striakhilev, A. Nathan, "Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors," IEEE Trans. Electron Devices 50, 2227-2235 (2003).

IEEE/OSA J. Display Technol. (1)

A. Nathan, R. Chaji, S-J. Ashtiani, "Driving schemes for a-Si and LTPS AMOLED displays," IEEE/OSA J. Display Technol. 1, 267-277 (2005).

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Other (3)

G. R. Chaji, A. Nathan, "LTPS vs oxide backplanes for AMOLED displays: System design considerations and compensation techniques," SID Symp. Dig. Tech. Papers (2014) pp. 153-156.

S. Lee, "Late news paper: Modeling current voltage behaviour in oxide TFTs combining trap limited conduction with percolation," 2013 SID Int. Symp. Dig. Tech. Papers (2013) pp. 2225.

J. Jacobs, D. Hente, E. Waffenschmidt, "Driving for OLEDs," IEEE 42nd Industry Appl. Conf. (2007) pp. 1147-1152.

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