Abstract

The large off-state drain–source leakage current of the thin-film transistor (TFT) in active-matrix electrophoretic display (AMEPD) may cause severe crosstalk and long pixel refresh time. Multiple-gate amorphous silicon TFT (a-Si TFT) is a common use to overcome this issue. In this paper, we show that the leakage current of multiple-gate a-Si TFT can be computed from the $I$–$V$ characteristics of a single TFT by an analytical current model. The predicted leakage currents show good agreement with the expected values in SPICE simulation. This model is also applicable for the multiple-gate a-Si TFTs used in other high voltage driven devices.

© 2008 IEEE

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