Abstract

We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/cm<sup>2</sup> at unity reverse bias and high responsivities of 200 mA/W at 1.55 ┬Ám. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s.

© 2008 IEEE

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