Abstract

The electrical and optical characteristics of a 1.3 $\mu$ m GaNAsSbGaAs p-i-n waveguide photodetector (WGPD), consisting of GaAs inner and Al $_{\rm x}$ Ga $_{1 - {\rm x}}$ As outer cladding layers, were simulated using a lumped-element model and finite difference beam propagation method (BPM). The effect of multiple cladding layers' thicknesses and aluminum composition on the quantum efficiency was investigated to provide design guide and deduce the range of parameters needed for achieving quantum efficiency higher than 89%. The simulation shows that a p-i-n waveguide structure with 10 $\mu$ m length, 4 $\mu$ m ridge width, 2.4 $\mu$ m ridge height and 0.4 $\mu$ m GaN $_{0.033}$ As $_{0.887}$ Sb $_{0.08}$ core layer thickness can exhibit a theoretical cut-off frequency limit of over 80 GHz. Maximum quantum efficiency of 91.5% can be obtained for this structure with cladding layer thickness of 0.5 $\mu$ m for GaAs and 0.5 $\mu$ m for Al $_{0.7}$ Ga $_{0.3}$ As.

© 2009 IEEE

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