Abstract

An internal space-charge electric field is established when two mutually coherent optical fields interfere inside an intrinsic photoconductive semiconductor containing deep-level recombination centers with band-gap energy smaller than the incident photon energy. Dc photocurrents are generated when the two optical fields have unequal center frequencies. A mathematical characterization of the behavior of the dc photocurrent, which can be used to characterize the host photoconductive material, is presented and verified experimentally for a Si sample.

© 1997 Optical Society of America

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