Abstract

An investigation of the effect of high-intensity radiation at frequencies below the fundamental absorption edge on the refractive index of a compound semiconductor must include consideration of effects due to generated carriers and effects due to heating. The latter include the change of band-gap energy with temperature and thermal expansion, both of which change the refractive index. A calculation of the refractive index of a semiconductor with the band structure of the Kane theory is given for the case of arbitrary spin–orbit splitting energy. Theoretical results are expressed in terms of the following experimental parameters: band-gap energy, effective electron mass, effective hole masses of the three valence bands, the spin–orbit splitting energy, and the lattice constant. An expression for the thermo-optic coefficient dn/dT is given that makes possible the numerical evaluation of the refractive index as a function of temperature. The nonlinear intensity-dependent refractive index is calculated, assuming that the change in carrier concentration is generated by an applied radiation field of high intensity, and theoretical results are compared with experiment for InAs and InSb.

© 1985 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Refractive index of hexagonal II–VI compounds CdSe, CdS, and CdSeXS1–X

B. Jensen and A. Torabi
J. Opt. Soc. Am. B 3(6) 857-863 (1986)

Temperature dependence of the refractive index in semiconductors

Mario Bertolotti, Victor Bogdanov, Aldo Ferrari, Andrei Jascow, Natalia Nazorova, Alexander Pikhtin, and Luigi Schirone
J. Opt. Soc. Am. B 7(6) 918-922 (1990)

Photoexcited-carrier-induced refractive index change in small bandgap semiconductors

Z. G. Yu, Srini Krishnamurthy, and Shekhar Guha
J. Opt. Soc. Am. B 23(11) 2356-2360 (2006)

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Tables (7)

You do not have subscription access to this journal. Article tables are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Equations (53)

You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Metrics

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription