Abstract

A measurement based on the modulation response of laser cavities with InGaN quantum wells as the gain medium is proposed to study microscopic scattering rates, which are of great importance when investigating the efficiency droop problem. Using semiconductor Bloch equations, an analytical equation is derived, establishing the relationship between the microscopic semiconductor processes and the modulation response of lasers. The carrier density dependence of microscopic scattering rates is also investigated by considering the correlation effects at the limit of Maxwell–Boltzmann statistics. Furthermore, the relaxation oscillation frequency is estimated as the laser cavity quality factor is varied by design.

© 2014 Optical Society of America

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