Abstract

The temperature coefficients of the refractive indices of Ge, Si, InAs, GaAs, InP, GaP, CdSe, ZnSe, and ZnS are measured by a prism technique in spectral ranges of up to λ = 12 μm at 15–35°C. Numerical values of equivalent oscillator parameters describing the n(λ) dispersion, as well as the high-frequency and low-frequency 0 dielectric constants, are determined with precision. Taking into account the band structure of the above semiconductors, the values dn/dT have been calculated and show good agreement with experimental data.

© 1990 Optical Society of America

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