Abstract

Laser-induced irreversible changes of luminescence intensity and lifetime have been systematically investigated in CdSxSe1–x-doped glass in order to clarify the laser-induced carrier-recombination process. These changes proceed at different rates, depending on the laser’s irradiation time, intensity, and sample temperature. A new phenomenological model for this laser-induced process is proposed in which a new recombination route for carriers is created in the trapping state by activation of a distributed potential barrier of this state.

© 1990 Optical Society of America

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