Abstract

Transverse effects are discussed that are related to optical diffraction and carrier diffusion in a bistable semiconductor Fabry–Perot interferometer with optical nonlinearity arising from variations in carrier concentrations. The system instability with respect to the homogeneous self-oscillations and self-focusing stratification is considered. The formation and pulsation of the structures are investigated in the numerical simulation.

© 1990 Optical Society of America

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