Abstract

This paper discusses the structural changes induced by laser radiation with wavelength λ=800nm, pulse width τ=100fs, and repetition rate f=80MHz in bulk samples of glassy semiconductors. As a result of this work, waveguide structures were created in As<sub>2</sub>S<sub>3</sub> and 0.15(Ga<sub>2</sub>S<sub>3</sub>)-0.85(GeS<sub>2</sub>):Er<sup>3+</sup>[C(Er<sup>3+</sup>)=1.2at%] glasses under various conditions of laser action (the recording method, the speed and number of scans). The structural changes induced by femtosecond laser radiation in a sample of As<sub>2</sub>S<sub>3</sub> glass were investigated by Raman scattering.

© 2009 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription