S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, and G. Koblmüller, “Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy,” J. Appl. Phys. 108(11), 114316 (2010).
[Crossref]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C.-H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]
S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, and G. Koblmüller, “Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy,” J. Appl. Phys. 108(11), 114316 (2010).
[Crossref]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
M. Moewe, L. C. Chuang, S. Crankshaw, K. W. Ng, and C. Chang-Hasnain, “Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission,” Opt. Express 17(10), 7831–7836 (2009).
[Crossref]
[PubMed]
M. Moewe, L. C. Chuang, S. Crankshaw, C. Chase, and C. Chang-Hasnain, “Atomically sharp catalyst-free wurtzite GaAs/AlGaAs nanoneedles grown on silicon,” Appl. Phys. Lett. 93(2), 023116 (2008).
[Crossref]
M. Moewe, L. C. Chuang, S. Crankshaw, C. Chase, and C. Chang-Hasnain, “Atomically sharp catalyst-free wurtzite GaAs/AlGaAs nanoneedles grown on silicon,” Appl. Phys. Lett. 93(2), 023116 (2008).
[Crossref]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C.-H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
M. Moewe, L. C. Chuang, S. Crankshaw, K. W. Ng, and C. Chang-Hasnain, “Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission,” Opt. Express 17(10), 7831–7836 (2009).
[Crossref]
[PubMed]
M. Moewe, L. C. Chuang, S. Crankshaw, C. Chase, and C. Chang-Hasnain, “Atomically sharp catalyst-free wurtzite GaAs/AlGaAs nanoneedles grown on silicon,” Appl. Phys. Lett. 93(2), 023116 (2008).
[Crossref]
A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref]
[PubMed]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref]
[PubMed]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
M. Moewe, L. C. Chuang, S. Crankshaw, K. W. Ng, and C. Chang-Hasnain, “Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission,” Opt. Express 17(10), 7831–7836 (2009).
[Crossref]
[PubMed]
M. Moewe, L. C. Chuang, S. Crankshaw, C. Chase, and C. Chang-Hasnain, “Atomically sharp catalyst-free wurtzite GaAs/AlGaAs nanoneedles grown on silicon,” Appl. Phys. Lett. 93(2), 023116 (2008).
[Crossref]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref]
[PubMed]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, and G. Koblmüller, “Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy,” J. Appl. Phys. 108(11), 114316 (2010).
[Crossref]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref]
[PubMed]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, and G. Koblmüller, “Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy,” J. Appl. Phys. 108(11), 114316 (2010).
[Crossref]
H. Takeuchi, A. Wung, X. Sun, R. T. Howe, and T.-J. King, “Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices,” IEEE Trans. Electron. Dev. 52(9), 2081–2086 (2005).
[Crossref]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C.-H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]
A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref]
[PubMed]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref]
[PubMed]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
H. Takeuchi, A. Wung, X. Sun, R. T. Howe, and T.-J. King, “Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices,” IEEE Trans. Electron. Dev. 52(9), 2081–2086 (2005).
[Crossref]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, and G. Koblmüller, “Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy,” J. Appl. Phys. 108(11), 114316 (2010).
[Crossref]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C.-H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref]
[PubMed]
Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C.-H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]
D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166–1185 (2009).
[Crossref]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
M. Moewe, L. C. Chuang, S. Crankshaw, K. W. Ng, and C. Chang-Hasnain, “Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission,” Opt. Express 17(10), 7831–7836 (2009).
[Crossref]
[PubMed]
M. Moewe, L. C. Chuang, S. Crankshaw, C. Chase, and C. Chang-Hasnain, “Atomically sharp catalyst-free wurtzite GaAs/AlGaAs nanoneedles grown on silicon,” Appl. Phys. Lett. 93(2), 023116 (2008).
[Crossref]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
M. Moewe, L. C. Chuang, S. Crankshaw, K. W. Ng, and C. Chang-Hasnain, “Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission,” Opt. Express 17(10), 7831–7836 (2009).
[Crossref]
[PubMed]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref]
[PubMed]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref]
[PubMed]
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005).
[Crossref]
[PubMed]
S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, and G. Koblmüller, “Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy,” J. Appl. Phys. 108(11), 114316 (2010).
[Crossref]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
H. Takeuchi, A. Wung, X. Sun, R. T. Howe, and T.-J. King, “Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices,” IEEE Trans. Electron. Dev. 52(9), 2081–2086 (2005).
[Crossref]
H. Takeuchi, A. Wung, X. Sun, R. T. Howe, and T.-J. King, “Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices,” IEEE Trans. Electron. Dev. 52(9), 2081–2086 (2005).
[Crossref]
L. C. Chuang, F. G. Sedgwick, R. Chen, W. S. Ko, M. Moewe, K. W. Ng, T.-T. D. Tran, and C. Chang-Hasnain, “GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate,” Nano Lett. 11(2), 385–390 (2011).
[Crossref]
[PubMed]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref]
[PubMed]
H. Takeuchi, A. Wung, X. Sun, R. T. Howe, and T.-J. King, “Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices,” IEEE Trans. Electron. Dev. 52(9), 2081–2086 (2005).
[Crossref]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]
J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C.-Z. Ning, J. A. Rogers, J.-M. Zuo, and X. Li, “InxGa₁-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics,” Nano Lett. 11(11), 4831–4838 (2011).
[Crossref]
[PubMed]