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[Crossref]
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[Crossref]
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[Crossref]
H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, F. Suarez, J. S. Ng, M. Hopkinson, and J. P. R. David, “Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer,” J. Appl. Phys. 99(4), 046104 (2006).
[Crossref]
H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, P. Navaretti, K. M. Groom, M. Hopkinson, and R. A. Hogg, “Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” Appl. Phys. Lett. 86(14), 143108 (2005).
[Crossref]
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[Crossref]
G. Balakrishnan, S. Huang, T. J. Rotter, A. Stintz, L. R. Dawson, K. J. Malloy, H. Xu, and D. L. Huffaker, “2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer,” Appl. Phys. Lett. 84(12), 2058 (2004).
K. Y. Ban, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence,” J. Appl. Phys. 111(10), 104302 (2012).
K.Y. Ban, S. N. Dahal, L. Nataraj, S. P. Bremner, S. G. Cloutier, and C. B. Honsberg, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” J. Vac. Sci. Technol. B 28, C3I6 (2010).
M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. A. Bert, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, I. P. Soshnikov, and P. Werner, “Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm,” Appl. Phys. Lett. 75(16), 2347 (1999).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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K.Y. Ban, S. N. Dahal, L. Nataraj, S. P. Bremner, S. G. Cloutier, and C. B. Honsberg, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” J. Vac. Sci. Technol. B 28, C3I6 (2010).
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T. T. Chen, C. L. Cheng, Y. F. Chen, F. Chang, H. Lin, C.-T. Wu, and C.-H. Chen, “Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies,” Phys. Rev. B 75(3), 033310 (2007).
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T. T. Chen, C. L. Cheng, Y. F. Chen, F. Chang, H. Lin, C.-T. Wu, and C.-H. Chen, “Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies,” Phys. Rev. B 75(3), 033310 (2007).
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W. T. Hsu, Y. A. Liao, S. K. Lu, S. J. Cheng, P. C. Chiu, J. I. Chyi, and W. H. Cheng, “Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1−xSbx type-II quantum dots,” Physica E 42(10), 2524–2528 (2010).
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W. T. Hsu, Y. A. Liao, S. K. Lu, S. J. Cheng, P. C. Chiu, J. I. Chyi, and W. H. Cheng, “Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1−xSbx type-II quantum dots,” Physica E 42(10), 2524–2528 (2010).
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W. T. Hsu, Y. A. Liao, S. K. Lu, S. J. Cheng, P. C. Chiu, J. I. Chyi, and W. H. Cheng, “Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1−xSbx type-II quantum dots,” Physica E 42(10), 2524–2528 (2010).
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[Crossref]
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W.-S. Liu, H. M. Wu, Y. A. Liao, J. I. Chyi, W. Y. Chen, and T. M. Hsu, “High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers,” J. Cryst. Growth 323(1), 164–166 (2011).
[Crossref]
W. T. Hsu, Y. A. Liao, S. K. Lu, S. J. Cheng, P. C. Chiu, J. I. Chyi, and W. H. Cheng, “Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1−xSbx type-II quantum dots,” Physica E 42(10), 2524–2528 (2010).
[Crossref]
Y. A. Liao, W. T. Hsu, P. C. Chiu, J. I. Chyi, and W. H. Chang, “Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots,” Appl. Phys. Lett. 94(5), 053101 (2009).
[Crossref]
W. H. Chang, Y. A. Liao, W. T. Hsu, M. C. Lee, P. C. Chiu, and J. I. Chyi, “Carrier dynamics of type-II InAs/GaAs quantum dots covered by a thin GaAs1−xSbx layer,” Appl. Phys. Lett. 93(3), 033107 (2008).
[Crossref]
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[Crossref]
T. M. Hsu, Y. S. Lan, W. H. Chang, N. T. Yeh, and J. I. Chyi, “Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing,” Appl. Phys. Lett. 76(6), 691 (2000).
[Crossref]
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[Crossref]
M. A. Majid, D. T. D. Childs, H. Shahid, S. C. Chen, K. Kennedy, R. J. Airey, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray, “Excited state bilayer quantum dot lasers at 1.3 µm,” Jpn. J. Appl. Phys. 50, 04DG10 (2011).
K.Y. Ban, S. N. Dahal, L. Nataraj, S. P. Bremner, S. G. Cloutier, and C. B. Honsberg, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” J. Vac. Sci. Technol. B 28, C3I6 (2010).
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J. S. Ng, H. Y. Liu, M. J. Steer, M. Hopkinson, and J. P. R. David, “Photoluminescence beyond 1.5 μm from InAs quantum dots,” Microelectron. J. 37(12), 1468–1470 (2006).
[Crossref]
H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, F. Suarez, J. S. Ng, M. Hopkinson, and J. P. R. David, “Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer,” J. Appl. Phys. 99(4), 046104 (2006).
[Crossref]
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[Crossref]
G. Balakrishnan, S. Huang, T. J. Rotter, A. Stintz, L. R. Dawson, K. J. Malloy, H. Xu, and D. L. Huffaker, “2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer,” Appl. Phys. Lett. 84(12), 2058 (2004).
J. M. Ulloa, R. Gargallo-Caballero, M. Bozkurt, M. del Moral, A. Guz-mán, P. M. Koenraad, and A. Hierro, “GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations,” Phys. Rev. B 81(16), 165305 (2010).
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C. S. Lee, P. Bhattacharya, T. Frost, and W. Guo, “Characteristics of a high speed 1.22μm tunnel injection p-doped quantum dot excited state laser,” Appl. Phys. Lett. 98(1), 011103 (2011).
[Crossref]
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[Crossref]
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[Crossref]
D. Guimard, Y. Arakawa, M. Ishida, S. Tsukamoto, M. Nishioka, Y. Nakata, H. Sudo, T. Yamamoto, and M. Sugawara, “Ground state lasing at 1.34 μm from InAs/GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(24), 241110 (2007).
[Crossref]
C. S. Lee, P. Bhattacharya, T. Frost, and W. Guo, “Characteristics of a high speed 1.22μm tunnel injection p-doped quantum dot excited state laser,” Appl. Phys. Lett. 98(1), 011103 (2011).
[Crossref]
J. M. Ulloa, R. Gargallo-Caballero, M. Bozkurt, M. del Moral, A. Guz-mán, P. M. Koenraad, and A. Hierro, “GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations,” Phys. Rev. B 81(16), 165305 (2010).
[Crossref]
S. Sengupta, N. Halder, and S. Chakrabarti, “Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness,” Mater. Res. Bull. 45(11), 1593–1597 (2010).
[Crossref]
J. M. Ulloa, R. Gargallo-Caballero, M. Bozkurt, M. del Moral, A. Guz-mán, P. M. Koenraad, and A. Hierro, “GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations,” Phys. Rev. B 81(16), 165305 (2010).
[Crossref]
M. A. Majid, D. T. D. Childs, H. Shahid, S. C. Chen, K. Kennedy, R. J. Airey, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray, “Excited state bilayer quantum dot lasers at 1.3 µm,” Jpn. J. Appl. Phys. 50, 04DG10 (2011).
B. J. Stevens, D. T. D. Childs, H. Shahid, and R. A. Hogg, “Direct modulation of excited state quantum dot lasers,” Appl. Phys. Lett. 95(6), 061101 (2009).
[Crossref]
H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, P. Navaretti, K. M. Groom, M. Hopkinson, and R. A. Hogg, “Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” Appl. Phys. Lett. 86(14), 143108 (2005).
[Crossref]
K. Y. Ban, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence,” J. Appl. Phys. 111(10), 104302 (2012).
K.Y. Ban, S. N. Dahal, L. Nataraj, S. P. Bremner, S. G. Cloutier, and C. B. Honsberg, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” J. Vac. Sci. Technol. B 28, C3I6 (2010).
C. Y. Jin, H. Y. Liu, S. Y. Zhang, Q. Jiang, S. L. Liew, M. Hopkinson, T. J. Badcock, E. Nabavi, and D. J. Mowbray, “Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” Appl. Phys. Lett. 91(2), 021102 (2007).
[Crossref]
J. M. Ulloa, I. W. D. Drouzas, P. M. Koenraad, D. J. Mowbray, M. J. Steer, H. Y. Liu, and M. Hopkinson, “Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer,” Appl. Phys. Lett. 90(21), 213105 (2007).
[Crossref]
H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, F. Suarez, J. S. Ng, M. Hopkinson, and J. P. R. David, “Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer,” J. Appl. Phys. 99(4), 046104 (2006).
[Crossref]
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