Abstract

We report on 1270 nm vertical-external-cavity surface-emitting lasers (VECSELs) with up to 59% conversion efficiency and maximum output power of 8.5 W (pump limited), at 5°C heat sink temperature. These VECSELs comprised wafer-fused gain mirrors in the flip-chip (thin-disk) heat dissipation scheme. The reflected pump light from the gain mirror surface was found to depend considerably on temperature and pump power.

© 2015 Optical Society of America

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
    [Crossref]
  2. P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
    [Crossref]
  3. L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
    [Crossref]
  4. G. Baili, L. Morvan, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, and A. Garnache, “Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations,” Opt. Lett. 34(21), 3421–3423 (2009).
    [Crossref] [PubMed]
  5. S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
    [Crossref] [PubMed]
  6. J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
  7. K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
    [Crossref]
  8. B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
    [Crossref]
  9. E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).
  10. S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
    [Crossref]
  11. J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).
  12. M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
    [Crossref]
  13. A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).
  14. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
    [Crossref] [PubMed]
  15. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
    [Crossref] [PubMed]
  16. A. Sirbu, A. Rantamäki, E. J. Saarinen, V. Iakovlev, A. Mereuta, J. Lyytikäinen, A. Caliman, N. Volet, O. G. Okhotnikov, and E. Kapon, “High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband,” Opt. Express 22(24), 29398–29403 (2014).
    [Crossref] [PubMed]
  17. A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
    [PubMed]
  18. J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).
  19. M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
    [Crossref]
  20. J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
    [Crossref]

2015 (1)

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

2014 (4)

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

A. Sirbu, A. Rantamäki, E. J. Saarinen, V. Iakovlev, A. Mereuta, J. Lyytikäinen, A. Caliman, N. Volet, O. G. Okhotnikov, and E. Kapon, “High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband,” Opt. Express 22(24), 29398–29403 (2014).
[Crossref] [PubMed]

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[PubMed]

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

2013 (2)

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
[Crossref]

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

2012 (2)

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

2011 (2)

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

2009 (2)

2008 (1)

2007 (1)

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

2005 (2)

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

2004 (2)

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[Crossref] [PubMed]

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

1997 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Alouini, M.

Baili, G.

Beaudoin, G.

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
[Crossref]

Bretenaker, F.

Brown, E. A.

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[Crossref] [PubMed]

Brown, S. B.

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[Crossref] [PubMed]

Burns, D.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Butkus, M.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Cacciani, P.

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

Caliman, A.

Calvez, S.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Caprara, A. L.

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

Cermák, P.

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

Cerutti, L.

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
[Crossref]

Chilla, J. L.

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

Cho, S.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

Cosléou, J.

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

Dawson, M. D.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Devautour, M.

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
[Crossref]

Dineen, C. A.

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

Dolfi, D.

El Romh, J.

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

Fallahi, M.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Fan, L.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Garnache, A.

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
[Crossref]

G. Baili, L. Morvan, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, and A. Garnache, “Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations,” Opt. Lett. 34(21), 3421–3423 (2009).
[Crossref] [PubMed]

Govorkov, S. V.

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

Guina, M.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

Hader, J.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Hamilton, C. J.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Heikkinen, J.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Heinen, B.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Hopkins, J. M.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Hovorka, J.

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

Iakovlev, V.

Jeon, C. W.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Jouhti, T.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Kaneda, Y.

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

Kantola, E.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

Kapon, E.

Kaspar, S.

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

Khelkhal, M.

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

Kim, G.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

Kim, J.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

Kim, K. S.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

Kim, T.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

Koch, M.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Koch, S. W.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Köhler, K.

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

Kolesik, M.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Krestnikov, I. L.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Kunert, B.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Lee, S.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

Leinonen, T.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

Livshits, D. A.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Lyytikainen, J.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Lyytikäinen, J.

Malcolm, G. P. A.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Manz, C.

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

Mereuta, A.

Michon, A.

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
[Crossref]

Micovic, Z.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Mikhrin, S. S.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Moloney, J. V.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Morvan, L.

Murray, J. T.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Okhotnikov, O. G.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

A. Sirbu, A. Rantamäki, E. J. Saarinen, V. Iakovlev, A. Mereuta, J. Lyytikäinen, A. Caliman, N. Volet, O. G. Okhotnikov, and E. Kapon, “High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband,” Opt. Express 22(24), 29398–29403 (2014).
[Crossref] [PubMed]

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[PubMed]

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[Crossref] [PubMed]

Park, Y.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
[Crossref]

Penttinen, J.-P.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

Pessa, M.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Peyghambarian, N.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Pierscinski, K.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Qiu, T.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Rafailov, E. U.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Ranta, S.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

Rantamaki, A.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Rantamäki, A.

Rattunde, M.

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

Rautiainen, J.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[Crossref] [PubMed]

Reed, M. K.

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

Saarinen, E. J.

Sagnes, I.

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
[Crossref]

G. Baili, L. Morvan, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, and A. Garnache, “Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations,” Opt. Lett. 34(21), 3421–3423 (2009).
[Crossref] [PubMed]

Schulzgen, A.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Schwarz, U.

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

Shou, Q.-Z.

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

Sirbu, A.

Smith, S. A.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Sparenberg, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Spinelli, L.

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Stolz, W.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

Sun, H. D.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

Tavast, M.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

Toikkanen, L.

Töpper, T.

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

Veis, P.

P. Čermák, J. Hovorka, P. Veis, P. Cacciani, J. Cosléou, J. El Romh, and M. Khelkhal, “Spectroscopy of 14NH3 and 15NH3 in the 2.3 µm spectral range with a new VECSEL laser source,” J. Quant. Spectrosc. Radiat. Transf. 137, 13–22 (2014).
[Crossref]

Volet, N.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

A. Sirbu, A. Rantamäki, E. J. Saarinen, V. Iakovlev, A. Mereuta, J. Lyytikäinen, A. Caliman, N. Volet, O. G. Okhotnikov, and E. Kapon, “High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband,” Opt. Express 22(24), 29398–29403 (2014).
[Crossref] [PubMed]

Wagner, J.

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
[Crossref]

Walker, I.

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[Crossref] [PubMed]

Wang, T.-L.

J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

Weber, A.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Weiss, E.

J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

Yarborough, J. M.

J. Hader, T.-L. Wang, J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, and S. W. Koch, “VECSEL optimization using microscopic many-body physics,” IEEE J. Sel. Top. Quantum Electron. 17, 1753 (2011).

Yoo, J.

K. S. Kim, J. Yoo, G. Kim, S. Lee, S. Cho, J. Kim, T. Kim, and Y. Park, “920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature,” IEEE Photon. Technol. Lett. 19(20), 1655–1657 (2007).
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J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

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L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray, “Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,” Appl. Phys. Lett. 86(21), 211116 (2005).
[Crossref]

S. Kaspar, M. Rattunde, T. Töpper, U. Schwarz, C. Manz, K. Köhler, and J. Wagner, “Electro-optically cavity dumped 2m semiconductor disk laser emitting 3ns pulses of 30 W peak power,” Appl. Phys. Lett. 101(14), 141121 (2012).
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J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 um,” Electron. Lett. 40(1), 30–31 (2004).

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M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache, “Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1701108 (2013).
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[Crossref]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
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J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz, “On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 113(15), 153102 (2013).
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J. L. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q.-Z. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, J.-P. Penttinen, and M. Guina, “1180nm VECSEL with 50 W output power,” Proc. SPIE 9349, 93490U (2015).

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. G. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

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Figures (5)

Fig. 1
Fig. 1 Left: A schematic cross-section of the gain mirror structure. Varying the thickness of the Ti adhesion layer changes the optical performance. Right: Direct cavity VECSEL in flip-chip configuration on a water-cooled heat sink (HS), with the reflected light being discarded in a beam dump (BD). We detect, in situ, the pumped (with detector DP), and reflected (DR) beams, using partially reflecting beam samplers, as well as the emitted (E) power (see text for details).
Fig. 2
Fig. 2 Light-light characteristics for gain mirrors with thick (left) and thin (right) Ti layer, respectively. The insets list the maximally achieved output powers and conversion efficiencies corresponding to the data at different temperatures.
Fig. 3
Fig. 3 Reflectivity (r = R/P) of samples with thick (left) and thin (right) Ti layer, respectively, versus absorbed power
Fig. 4
Fig. 4 Summaries of base reflectivity (indicated by dot-dashed lines in Fig. 3) (left) and conversion efficiencies (dashed lines of Fig. 2) (right), versus heat sink temperature. Expressions for the linear fit are also shown. Inset: Reflectivity versus absorbed power of the thick Ti layer sample with (black) and without (grey, line) output coupler, for three temperatures.
Fig. 5
Fig. 5 Emission spectra of the VECSELs employing the thick (left) and thin (right) Ti layers in the gain mirrors, for different heat sink temperatures, measured under conditions where the peak output is achieved. The values of these peak powers are indicated for each heat sink temperature.

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