Abstract

We investigated numerically and experimentally the achievement of strongly localized electric field and significantly enhanced second harmonic generation (SHG) in two-dimensional (2D) materials by using dielectric-metal hybrid substrates. Based on the theory of thin film interference, it was revealed that the strongest localization of electric field in a 2D material, which corresponds to the largest absorption in the metal film, could be achieved by minimizing the reflection of the combined structure (i.e., 2D material + hybrid substrate) because the transmission through the combined structure was negligible. By using MoS2 as an example, it was demonstrated that a SHG enhancement factor of ~6 could be achieved in the 17-nm-thick MoS2 layer on an Au/SiO2 substrate as compared with the single-layer MoS2 on the commonly used SiO2/Si substrates with highly efficient SHG. By employing a SiO2-SnO2/Ag/SiO2 substrate in which a 20-nm-thick dielectric film of SiO2-SnO2 was inserted in between the MoS2 layer and the Ag film, a SHG enhancement factor as large as ~18 could be realized in the 9-nm-thick MoS2 layer. Numerical simulations based on the finite-difference time-domain technique were employed to derive the enhancement factors for SHG and it was revealed that for thick MoS2 layers the SHG intensity is dominated mainly by the localization of electric field induced by the dielectric-metal hybrid substrates. The dependence of the SHG enhancement factor on the thickness of the MoS2 layer was found to be modified when the dielectric-metal hybrid substrates were adopted.

© 2015 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Second harmonic generation spectroscopy on two-dimensional materials [Invited]

Ying Wang, Jun Xiao, Sui Yang, Yuan Wang, and Xiang Zhang
Opt. Mater. Express 9(3) 1136-1149 (2019)

3D SERS substrate based on Au-Ag bi-metal nanoparticles/MoS2 hybrid with pyramid structure

Jihua Xu, Chonghui Li, Haipeng Si, Xiaofei Zhao, Lin Wang, Shouzhen Jiang, Dongmei Wei, Jing Yu, Xianwu Xiu, and Chao Zhang
Opt. Express 26(17) 21546-21557 (2018)

Nanoscale plasmonic phenomena in CVD-grown MoS2 monolayer revealed by ultra-broadband synchrotron radiation based nano-FTIR spectroscopy and near-field microscopy

Piotr Patoka, Georg Ulrich, Ariana E. Nguyen, Ludwig Bartels, Peter A. Dowben, Volodymyr Turkowski, Talat S. Rahman, Peter Hermann, Bernd Kästner, Arne Hoehl, Gerhard Ulm, and Eckart Rühl
Opt. Express 24(2) 1154-1164 (2016)

References

  • View by:
  • |
  • |
  • |

  1. L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors,” IEEE Trans. Electron. Dev. 58(9), 3042–3047 (2011).
    [Crossref]
  2. Y. Yoon, K. Ganapathi, and S. Salahuddin, “How good can monolayer MoS₂ transistors be?” Nano Lett. 11(9), 3768–3773 (2011).
    [Crossref] [PubMed]
  3. H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
    [Crossref] [PubMed]
  4. B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
    [Crossref] [PubMed]
  5. S. Bertolazzi, J. Brivio, and A. Kis, “Stretching and breaking of ultrathin MoS2.,” ACS Nano 5(12), 9703–9709 (2011).
    [Crossref] [PubMed]
  6. Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
    [Crossref] [PubMed]
  7. J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
    [Crossref] [PubMed]
  8. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
    [Crossref] [PubMed]
  9. H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
    [Crossref] [PubMed]
  10. M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell,” Appl. Phys. Lett. 100(15), 153901 (2012).
    [Crossref]
  11. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
    [Crossref] [PubMed]
  12. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
    [Crossref] [PubMed]
  13. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
    [Crossref] [PubMed]
  14. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
    [Crossref] [PubMed]
  15. K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol. 7(8), 494–498 (2012).
    [Crossref] [PubMed]
  16. H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
    [Crossref] [PubMed]
  17. T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
    [Crossref] [PubMed]
  18. S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
    [Crossref] [PubMed]
  19. R. Ganatra and Q. Zhang, “Few-layer MoS2: a promising layered semiconductor,” ACS Nano 8(5), 4074–4099 (2014).
    [Crossref] [PubMed]
  20. H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
    [Crossref] [PubMed]
  21. Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
    [Crossref] [PubMed]
  22. R. W. Boyd, Nonlinear Optics, 3rd ed. (Academic, 2008).
  23. N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
    [Crossref]
  24. L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
    [Crossref]
  25. Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
    [Crossref] [PubMed]
  26. D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
    [Crossref]
  27. H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
    [PubMed]
  28. M. Grüning and C. Attaccalite, “Second harmonic generation in h-BN and MoS2 monolayers: role of electron-hole interaction,” Phys. Rev. B 89(8), 081102 (2014).
    [Crossref]
  29. M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
    [Crossref] [PubMed]
  30. G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
    [Crossref] [PubMed]
  31. J. Bardeen, “Electron correlation and screening effects in related to surface physics,” Surf. Sci. 2(6), 381–388 (1964).
    [Crossref]
  32. K. S. Yee, “Numerical solution of boundary value problems involving Maxwell’s equations in isotropic media,” IEEE Trans. Antenn. Propag. 14(3), 302–307 (1966).
    [Crossref]
  33. C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6(12), 125801 (2013).
    [Crossref]
  34. R. A. Neville and B. L. Evans, “The band edge excitons in 2H-MoS2,” Phys. Status Solidi 73(2), 597–606 (1976).
    [Crossref]
  35. C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
    [Crossref]
  36. M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, “Nanometre optical coatings based on strong interference effects in highly absorbing media,” Nat. Mater. 12(1), 20–24 (2012).
    [Crossref] [PubMed]
  37. M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
    [Crossref]
  38. M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, “Thin-film interference in lossy, ultra-thin layers,” Opt. Photonics News 25(1), 40–47 (2014).
    [Crossref]
  39. J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
    [Crossref] [PubMed]
  40. H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
    [Crossref]

2015 (2)

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

2014 (6)

M. Grüning and C. Attaccalite, “Second harmonic generation in h-BN and MoS2 monolayers: role of electron-hole interaction,” Phys. Rev. B 89(8), 081102 (2014).
[Crossref]

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, “Thin-film interference in lossy, ultra-thin layers,” Opt. Photonics News 25(1), 40–47 (2014).
[Crossref]

R. Ganatra and Q. Zhang, “Few-layer MoS2: a promising layered semiconductor,” ACS Nano 8(5), 4074–4099 (2014).
[Crossref] [PubMed]

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

2013 (6)

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
[Crossref]

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6(12), 125801 (2013).
[Crossref]

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

2012 (13)

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, “Nanometre optical coatings based on strong interference effects in highly absorbing media,” Nat. Mater. 12(1), 20–24 (2012).
[Crossref] [PubMed]

K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol. 7(8), 494–498 (2012).
[Crossref] [PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell,” Appl. Phys. Lett. 100(15), 153901 (2012).
[Crossref]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

2011 (4)

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

S. Bertolazzi, J. Brivio, and A. Kis, “Stretching and breaking of ultrathin MoS2.,” ACS Nano 5(12), 9703–9709 (2011).
[Crossref] [PubMed]

L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors,” IEEE Trans. Electron. Dev. 58(9), 3042–3047 (2011).
[Crossref]

Y. Yoon, K. Ganapathi, and S. Salahuddin, “How good can monolayer MoS₂ transistors be?” Nano Lett. 11(9), 3768–3773 (2011).
[Crossref] [PubMed]

2010 (2)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

2007 (1)

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

2005 (1)

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

2004 (1)

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

1976 (1)

R. A. Neville and B. L. Evans, “The band edge excitons in 2H-MoS2,” Phys. Status Solidi 73(2), 597–606 (1976).
[Crossref]

1966 (1)

K. S. Yee, “Numerical solution of boundary value problems involving Maxwell’s equations in isotropic media,” IEEE Trans. Antenn. Propag. 14(3), 302–307 (1966).
[Crossref]

1964 (1)

J. Bardeen, “Electron correlation and screening effects in related to surface physics,” Surf. Sci. 2(6), 381–388 (1964).
[Crossref]

Adam, P. M.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Aizenberg, J.

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

Ajayan, P. M.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Alencar, T. V.

L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
[Crossref]

Ataca, C.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Attaccalite, C.

M. Grüning and C. Attaccalite, “Second harmonic generation in h-BN and MoS2 monolayers: role of electron-hole interaction,” Phys. Rev. B 89(8), 081102 (2014).
[Crossref]

Bachelot, R.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Baillargeat, D.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Balicas, L.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Bansal, T.

M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell,” Appl. Phys. Lett. 100(15), 153901 (2012).
[Crossref]

Barboza, A. P. M.

L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
[Crossref]

Bardeen, J.

J. Bardeen, “Electron correlation and screening effects in related to surface physics,” Surf. Sci. 2(6), 381–388 (1964).
[Crossref]

Bertolazzi, S.

S. Bertolazzi, J. Brivio, and A. Kis, “Stretching and breaking of ultrathin MoS2.,” ACS Nano 5(12), 9703–9709 (2011).
[Crossref] [PubMed]

Billot, L.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Blanchard, R.

M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, “Thin-film interference in lossy, ultra-thin layers,” Opt. Photonics News 25(1), 40–47 (2014).
[Crossref]

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, “Nanometre optical coatings based on strong interference effects in highly absorbing media,” Nat. Mater. 12(1), 20–24 (2012).
[Crossref] [PubMed]

Booth, T. J.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Bradley, A. J.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Brivio, J.

S. Bertolazzi, J. Brivio, and A. Kis, “Stretching and breaking of ultrathin MoS2.,” ACS Nano 5(12), 9703–9709 (2011).
[Crossref] [PubMed]

Byrnes, S. J.

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

Cannuccia, E.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Cao, T.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Capasso, F.

M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, “Thin-film interference in lossy, ultra-thin layers,” Opt. Photonics News 25(1), 40–47 (2014).
[Crossref]

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, “Nanometre optical coatings based on strong interference effects in highly absorbing media,” Nat. Mater. 12(1), 20–24 (2012).
[Crossref] [PubMed]

Ceballos, F.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

Chang, Y. G.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Chen, X.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Chim, C. Y.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Chin, M. L.

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Cho, H.-Y.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Chung, K.-H.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Clark, D. J.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Crommie, M. F.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Cui, Q.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

Cui, X.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

da Jornada, F. H.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Dai, J.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Dai, Q.

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

de Paula, A. M.

L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
[Crossref]

Dean, C. R.

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

Dorkenoo, K. D.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Dresselhaus, M. S.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

Dubey, M.

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Dubonos, S. V.

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Durcan, C. A.

M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell,” Appl. Phys. Lett. 100(15), 153901 (2012).
[Crossref]

Edwin, T. H. T.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Evans, B. L.

R. A. Neville and B. L. Evans, “The band edge excitons in 2H-MoS2,” Phys. Status Solidi 73(2), 597–606 (1976).
[Crossref]

Fan, H.

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

Feng, J.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Firsov, A. A.

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Ford, A.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Galli, G.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Ganapathi, K.

Y. Yoon, K. Ganapathi, and S. Salahuddin, “How good can monolayer MoS₂ transistors be?” Nano Lett. 11(9), 3768–3773 (2011).
[Crossref] [PubMed]

Ganatra, R.

R. Ganatra and Q. Zhang, “Few-layer MoS2: a promising layered semiconductor,” ACS Nano 8(5), 4074–4099 (2014).
[Crossref] [PubMed]

Gao, G.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Gao, W.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Geim, A. K.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Genevet, P.

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, “Nanometre optical coatings based on strong interference effects in highly absorbing media,” Nat. Mater. 12(1), 20–24 (2012).
[Crossref] [PubMed]

Gindre, D.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Grand, J.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Grigorieva, I. V.

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Grossman, J. C.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Grüning, M.

M. Grüning and C. Attaccalite, “Second harmonic generation in h-BN and MoS2 monolayers: role of electron-hole interaction,” Phys. Rev. B 89(8), 081102 (2014).
[Crossref]

Guo, J.

L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors,” IEEE Trans. Electron. Dev. 58(9), 3042–3047 (2011).
[Crossref]

Gupta, B. K.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Han, W.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

He, K.

K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol. 7(8), 494–498 (2012).
[Crossref] [PubMed]

He, Q.

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

He, R.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Heinz, T. F.

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol. 7(8), 494–498 (2012).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Hone, J.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Hsu, A.

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Hsu, A. L.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

Hsu, Y. T.

C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6(12), 125801 (2013).
[Crossref]

Huang, S.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

Huang, X.

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

Hubert, C.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Hussain, Z.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Im, S.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Iwasa, Y.

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

Jang, J. I.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Jiang, D.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Jiang, L.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Kats, M. A.

M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, “Thin-film interference in lossy, ultra-thin layers,” Opt. Photonics News 25(1), 40–47 (2014).
[Crossref]

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, “Nanometre optical coatings based on strong interference effects in highly absorbing media,” Nat. Mater. 12(1), 20–24 (2012).
[Crossref] [PubMed]

Khotkevich, V. V.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Kim, H.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Kim, J.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Kim, J. H.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Kim, Y. S.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Kis, A.

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

S. Bertolazzi, J. Brivio, and A. Kis, “Stretching and breaking of ultrathin MoS2.,” ACS Nano 5(12), 9703–9709 (2011).
[Crossref] [PubMed]

Kolle, M.

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

Kong, J.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Kumar, N.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

Kumar, S. B.

L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors,” IEEE Trans. Electron. Dev. 58(9), 3042–3047 (2011).
[Crossref]

Lan, S.

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

Le, C. T.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Lee, C.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Lee, H. S.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Lee, Y. H.

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Lee, Y.-H.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

Li, H.

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Li, J.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Li, L. J.

C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6(12), 125801 (2013).
[Crossref]

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Li, T.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Li, Y.

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

Lin, Y.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

Ling, X.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

Liu, B.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Liu, G.-B.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Liu, H. L.

C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6(12), 125801 (2013).
[Crossref]

Liu, K. K.

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

Liu, L.

L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors,” IEEE Trans. Electron. Dev. 58(9), 3042–3047 (2011).
[Crossref]

Liu, M.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Liu, Z.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Lo, K.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Lou, J.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

Louie, S. G.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Lu, G.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Mak, K. F.

L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
[Crossref]

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol. 7(8), 494–498 (2012).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Malard, L. M.

L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
[Crossref]

Mathkar, A.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Matthews, T. S.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Min, S. W.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Mo, S. K.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Morozov, S. V.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Najmaei, S.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

Nam, T.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Narayanan, T. N.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Neville, R. A.

R. A. Neville and B. L. Evans, “The band edge excitons in 2H-MoS2,” Phys. Status Solidi 73(2), 597–606 (1976).
[Crossref]

Niu, Q.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Novoselov, K. S.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Olivier, A.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Ouyang, Y.

L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors,” IEEE Trans. Electron. Dev. 58(9), 3042–3047 (2011).
[Crossref]

Palacios, T.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Park, M. K.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Peng, J.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Pu, J.

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

Qiu, D. Y.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Radisavljevic, B.

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

Ramanathan, S.

M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, “Thin-film interference in lossy, ultra-thin layers,” Opt. Photonics News 25(1), 40–47 (2014).
[Crossref]

Rao, Y.

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

Royer, P.

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

Ruan, W.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Rubio, A.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Ryu, S.

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Salahuddin, S.

Y. Yoon, K. Ganapathi, and S. Salahuddin, “How good can monolayer MoS₂ transistors be?” Nano Lett. 11(9), 3768–3773 (2011).
[Crossref] [PubMed]

Schedin, F.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Senthilkumar, V.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Seong, M.-J.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Shan, J.

K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol. 7(8), 494–498 (2012).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Shanmugam, M.

M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell,” Appl. Phys. Lett. 100(15), 153901 (2012).
[Crossref]

Shen, C. C.

C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6(12), 125801 (2013).
[Crossref]

Shen, Z. X.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Shi, J.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Shi, S.-F.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Shi, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Sim, Y.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Splendiani, A.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Sun, L.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Sun, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Taha-Tijerina, J.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Takenobu, T.

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

Tan, P.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Tay, B. K.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Tie, S.

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

Tongay, S.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Ugeda, M. M.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

Ullah, F.

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

Wang, E.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Wang, F.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Wang, G.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Wang, H.

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Wang, S.

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

Wang, Y.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Whitwick, M. B.

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

Wong, Z. J.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Wu, J.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Wu, S.

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

Xiao, D.

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Xiao, J.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Xie, L.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Xiong, S.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Xu, S.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Yan, Y.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Yao, W.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Yap, C. C. R.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Ye, H.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Ye, Y.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Ye, Z.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Yee, K. S.

K. S. Yee, “Numerical solution of boundary value problems involving Maxwell’s equations in isotropic media,” IEEE Trans. Antenn. Propag. 14(3), 302–307 (1966).
[Crossref]

Yin, X.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Yin, Y.

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Yin, Z.

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Yomogida, Y.

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

Yoon, Y.

Y. Yoon, K. Ganapathi, and S. Salahuddin, “How good can monolayer MoS₂ transistors be?” Nano Lett. 11(9), 3768–3773 (2011).
[Crossref] [PubMed]

You, Y.

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

Yu, B.

M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell,” Appl. Phys. Lett. 100(15), 153901 (2012).
[Crossref]

Yu, L.

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

Yuan, M.

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

Yuan, W.

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

Zeng, H.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Zeng, J.

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

Zeng, Z.

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

Zhang, H.

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Zhang, Q.

R. Ganatra and Q. Zhang, “Few-layer MoS2: a promising layered semiconductor,” ACS Nano 8(5), 4074–4099 (2014).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Zhang, X.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

Zhang, Y.

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Zhao, H.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

Zhou, J.

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Zhu, B.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Zhu, C.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Zhu, H.

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

ACS Nano (4)

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

S. Bertolazzi, J. Brivio, and A. Kis, “Stretching and breaking of ultrathin MoS2.,” ACS Nano 5(12), 9703–9709 (2011).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

R. Ganatra and Q. Zhang, “Few-layer MoS2: a promising layered semiconductor,” ACS Nano 8(5), 4074–4099 (2014).
[Crossref] [PubMed]

Adv. Funct. Mater. (1)

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Appl. Phys. Express (1)

C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6(12), 125801 (2013).
[Crossref]

Appl. Phys. Lett. (4)

C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford, “Role of surface plasmon in second harmonic generation from gold nanorods,” Appl. Phys. Lett. 90(18), 181105 (2007).
[Crossref]

D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, and J. I. Jang, “Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates,” Appl. Phys. Lett. 107(13), 131113 (2015).
[Crossref]

M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell,” Appl. Phys. Lett. 100(15), 153901 (2012).
[Crossref]

M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, “Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings,” Appl. Phys. Lett. 103(10), 101104 (2013).
[Crossref]

IEEE Trans. Antenn. Propag. (1)

K. S. Yee, “Numerical solution of boundary value problems involving Maxwell’s equations in isotropic media,” IEEE Trans. Antenn. Propag. 14(3), 302–307 (1966).
[Crossref]

IEEE Trans. Electron. Dev. (1)

L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors,” IEEE Trans. Electron. Dev. 58(9), 3042–3047 (2011).
[Crossref]

Nano Lett. (9)

Y. Yoon, K. Ganapathi, and S. Salahuddin, “How good can monolayer MoS₂ transistors be?” Nano Lett. 11(9), 3768–3773 (2011).
[Crossref] [PubMed]

H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS₂ transistors,” Nano Lett. 12(9), 4674–4680 (2012).
[Crossref] [PubMed]

H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, “Highly flexible MoS2 thin-film transistors with ion gel dielectrics,” Nano Lett. 12(8), 4013–4017 (2012).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS₂,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, “Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.,” Nano Lett. 12(11), 5576–5580 (2012).
[Crossref] [PubMed]

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13(7), 3329–3333 (2013).
[Crossref] [PubMed]

Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, “Dielectric screening of excitons and trions in single-layer MoS2.,” Nano Lett. 14(10), 5569–5576 (2014).
[Crossref] [PubMed]

G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, “Artificially stacked atomic layers: toward new van der Waals solids,” Nano Lett. 12(7), 3518–3525 (2012).
[Crossref] [PubMed]

Nanoscale (1)

J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, “Enhanced second harmonic generation of MoS2 layers on a thin gold film,” Nanoscale 7(32), 13547–13553 (2015).
[Crossref] [PubMed]

Nat. Commun. (1)

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3(2), 887 (2012).
[Crossref] [PubMed]

Nat. Mater. (2)

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, “Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor,” Nat. Mater. 13(12), 1091–1095 (2014).
[Crossref] [PubMed]

M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, “Nanometre optical coatings based on strong interference effects in highly absorbing media,” Nat. Mater. 12(1), 20–24 (2012).
[Crossref] [PubMed]

Nat. Nanotechnol. (3)

H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, “Observation of piezoelectricity in free-standing monolayer MoS₂,” Nat. Nanotechnol. 10(2), 151–155 (2014).
[Crossref] [PubMed]

K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol. 7(8), 494–498 (2012).
[Crossref] [PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Opt. Photonics News (1)

M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, “Thin-film interference in lossy, ultra-thin layers,” Opt. Photonics News 25(1), 40–47 (2014).
[Crossref]

Phys. Rev. B (3)

M. Grüning and C. Attaccalite, “Second harmonic generation in h-BN and MoS2 monolayers: role of electron-hole interaction,” Phys. Rev. B 89(8), 081102 (2014).
[Crossref]

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87(16), 161403 (2013).
[Crossref]

L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, “Observation of intense second harmonic generation from MoS2 atomic crystals,” Phys. Rev. B 87(20), 201401 (2013).
[Crossref]

Phys. Rev. Lett. (1)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: A new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Phys. Status Solidi (1)

R. A. Neville and B. L. Evans, “The band edge excitons in 2H-MoS2,” Phys. Status Solidi 73(2), 597–606 (1976).
[Crossref]

Proc. Natl. Acad. Sci. U.S.A. (1)

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Sci. Rep. (1)

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3(7444), 1608 (2013).
[PubMed]

Science (1)

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Small (1)

Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, “Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,” Small 8(19), 2994–2999 (2012).
[Crossref] [PubMed]

Surf. Sci. (1)

J. Bardeen, “Electron correlation and screening effects in related to surface physics,” Surf. Sci. 2(6), 381–388 (1964).
[Crossref]

Other (1)

R. W. Boyd, Nonlinear Optics, 3rd ed. (Academic, 2008).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1 Schematic showing the localization of electric field in the 17-nm-thick MoS2 layer on the Au/SiO2 substrate (a) and in the 9-nm-thick MoS2 layer on the SiO2-SnO2/Ag/SiO2 substrate (b). The electric field intensity (|E|2) distributions and the corresponding enhancement factors in the two structures calculated at 800 and 400 nm are also presented.
Fig. 2
Fig. 2 Thickness dependence of reflection, transmission and absorption spectra calculated for the MoS2 layer on the Au/SiO2 (a) and SiO2-SnO2/Ag/SiO2 (b) substrates at the wavelength of 800 nm. A comparison of the thickness dependence of the SHG enhancement factor calculated for the three types of substrates is shown (c). The relative SHG intensities measured for the MoS2 layers with different thicknesses on the Au/SiO2 and SiO2-SnO2/Ag/SiO2 substrates are also provided.
Fig. 3
Fig. 3 Nonlinear response spectra measured for the single-layer and bulk MoS2 on the SiO2/Si substrate (a), the MoS2 layers with different thicknesses (s1: ~3.5 nm, s2: ~8 nm, s3: ~10 nm, s4: ~17 nm, s5: ~30 nm, s6: ~50 nm) on the Au/SiO2 substrate (b), and the MoS2 layers with different thicknesses (s1: ~2.6 nm, s2: ~9 nm, s3: ~30 nm, s4: ~40 nm, s5: ~45 nm, s6: ~50 nm) on the SiO2-SnO2/Ag/SiO2 substrate (c). A comparison of the nonlinear response spectra for the single-layer MoS2 on the SiO2/Si substrate, the 17-nm-thick MoS2 layer on the Au/SiO2 substrate and the 9-nm-thick MoS2 layer on the SiO2-SnO2/Ag/SiO2 substrate is presented in (d). In each case, the microscope images for the MoS2 layers with different thicknesses are presented on the top of the figure.
Fig. 4
Fig. 4 (a) Complex refractive index of MoS2 used in the calculation. (b) and (c) show the reflection spectra calculated for the MoS2 samples (see s1−s6 in Fig. 3(b)) on the Au/SiO2 substrate and for the MoS2 samples (see s1−s6 in Fig. 3(c)) on the SiO2-SnO2/Ag/SiO2 substrate. The chromaticity coordinates calculated for the MoS2 samples (s1−s6) on the Au/SiO2 and SiO2-SnO2/Ag/SiO2 substrates based on the reflection spectra are shown in (d) and (e) (s1: isosceles triangle; s2: rhombus; s3: right triangle; s4: circle; s5: square; s6: cross star). The calculated chromaticity coordinates are in good agreement with the color shown in Figs. 3(b) and 3(c).
Fig. 5
Fig. 5 Raman scattering spectra measured for the single-layer MoS2 on the SiO2/Si substrate, the 17-nm-thick MoS2 layer on the Au/SiO2 substrate and the 9-nm-thick MoS2 layer on the SiO2-SnO2/Ag/SiO2 substrate.
Fig. 6
Fig. 6 Nonlinear response spectra measured at different irradiation times for the 17-nm-thick MoS2 layer on the Au/SiO2 substrate (a) and the 9-nm-thick MoS2 layer on the SiO2-SnO2/Ag/SiO2 substrate (b). The dependences of the SHG intensity on the irradiation time and the microscope images before and after the ablation for the two cases are shown in the insets.

Tables (1)

Tables Icon

Table 1 Complex refractive indexes of MoS2 (including single-layer and bulk MoS2), Au, Ag, SiO2-SnO2, SiO2 and Si used in the calculation of the electric field intensity distributions in the MoS2 layers with different thicknesses on the SiO2/Si, Au/SiO2, and SiO2- SnO2/Ag/SiO2 substrates

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

I SHG f 4 (λ) f 2 (λ/2 ) I in

Metrics