Abstract

We present the use of a “double optical pump” technique in terahertz time-domain emission spectroscopy as an alternative method to investigate the lifetime of photo-excited carriers in semiconductors. Compared to the commonly employed optical pump-probe transient photo-reflectance, this non-contact and room temperature characterization technique allows relative ease in achieving optical alignment. The technique was implemented to evaluate the carrier lifetime in low temperature-grown gallium arsenide (LT-GaAs). The carrier lifetime values deduced from “double optical pump” THz emission decay curves show good agreement with data obtained from standard transient photo-reflectance measurements on the same LT-GaAs samples grown at 250 °C and 310 °C.

© 2016 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
  24. H. Murakami, S. Fujiwara, I. Kawayama, and M. Tonouchi, “Study of photoexcited-carrier dynamics in GaAs photoconductive switches using dynamic terahertz emission microscopy,” Photon. Res. 4(3), A9–A15 (2016).
    [Crossref]
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    [Crossref]

2016 (1)

2013 (2)

Y. Kawano, “Terahertz Waves: A tool for condensed matter, the life sciences and astronomy,” Contemp. Phys. 54(3), 143–165 (2013).
[Crossref]

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

2007 (1)

V. Ortiz, J. Nagle, J. F. Lampin, E. Péronne, and A. Alexandrou, “Low-temperature-grown GaAs: Modeling of transient reflectivity experiments,” J. Appl. Phys. 102(4), 043515 (2007).
[Crossref]

2006 (2)

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

2002 (2)

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

M. Tonouchi, N. Kawasaki, T. Yoshimura, H. Wald, and P. Seidel, “Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L706–L709 (2002).
[Crossref]

2001 (2)

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Sub-picosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved THz spectroscopy,” J. Appl. Phys. 90(12), 5915–5923 (2001).
[Crossref]

1999 (1)

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, “Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates,” Appl. Phys. Lett. 75(17), 2575–2577 (1999).
[Crossref]

1998 (1)

A. Othonos, “Probing ultrafast carrier and phonon dynamics in semiconductors,” J. Appl. Phys. 83(4), 1789–1830 (1998).
[Crossref]

1997 (2)

S. S. Prahbu, S. E. Ralph, M. R. Melloch, and E. S. Harmon, “Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy,” Appl. Phys. Lett. 70(18), 2419–2421 (1997).
[Crossref]

M. Tani, K. Sakai, and H. Mimura, “Ultrafast Photoconductive Detectors Based on Semi-insulating GaAs and InP,” Jpn. J. Appl. Phys. 36(Part 2, No. 9A/B), L1175–L1178 (1997).
[Crossref]

1996 (1)

U. Siegner, R. Fluck, G. Zhang, and U. Keller, “Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide,” Appl. Phys. Lett. 69(17), 2566–2568 (1996).
[Crossref]

1995 (1)

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

1994 (1)

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

1993 (4)

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

M. Y. Frankel, B. Tadayon, and T. F. Carruthers, “Integration of low-temperature GaAs on Si substrates,” Appl. Phys. Lett. 62(3), 255–257 (1993).
[Crossref]

T. Dekorsy, T. Pfeifer, W. Kütt, and H. Kurz, “Subpicosecond carrier transport in GaAs surface-space-charge fields,” Phys. Rev. B Condens. Matter 47(7), 3842–3849 (1993).
[Crossref] [PubMed]

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

1992 (1)

X.-C. Zhang and D. H. Auston, “Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics,” J. Appl. Phys. 71(1), 326–338 (1992).
[Crossref]

1991 (1)

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

1990 (1)

B. R. Bennett, R. A. Soref, and J. A. del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26(1), 113–122 (1990).
[Crossref]

Abe, H.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Abe, Y.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Alexandrou, A.

V. Ortiz, J. Nagle, J. F. Lampin, E. Péronne, and A. Alexandrou, “Low-temperature-grown GaAs: Modeling of transient reflectivity experiments,” J. Appl. Phys. 102(4), 043515 (2007).
[Crossref]

Auston, D. H.

X.-C. Zhang and D. H. Auston, “Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics,” J. Appl. Phys. 71(1), 326–338 (1992).
[Crossref]

Beard, M. C.

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Sub-picosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved THz spectroscopy,” J. Appl. Phys. 90(12), 5915–5923 (2001).
[Crossref]

Beere, H. E.

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

Bennett, B. R.

B. R. Bennett, R. A. Soref, and J. A. del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26(1), 113–122 (1990).
[Crossref]

Bowers, J. E.

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, “Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates,” Appl. Phys. Lett. 75(17), 2575–2577 (1999).
[Crossref]

Calawa, A. R.

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

Carruthers, T. F.

M. Y. Frankel, B. Tadayon, and T. F. Carruthers, “Integration of low-temperature GaAs on Si substrates,” Appl. Phys. Lett. 62(3), 255–257 (1993).
[Crossref]

Cheng, H. J.

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

Chuang, S. L.

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

Cullis, A. G.

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

Cunningham, J. E.

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

Dekorsy, T.

T. Dekorsy, T. Pfeifer, W. Kütt, and H. Kurz, “Subpicosecond carrier transport in GaAs surface-space-charge fields,” Phys. Rev. B Condens. Matter 47(7), 3842–3849 (1993).
[Crossref] [PubMed]

del Alamo, J. A.

B. R. Bennett, R. A. Soref, and J. A. del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26(1), 113–122 (1990).
[Crossref]

Docherty, C. J.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Dohler, G.

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

Evans, M. J.

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

Farrer, I.

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

Fleischer, S. B.

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, “Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates,” Appl. Phys. Lett. 75(17), 2575–2577 (1999).
[Crossref]

Fluck, R.

U. Siegner, R. Fluck, G. Zhang, and U. Keller, “Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide,” Appl. Phys. Lett. 69(17), 2566–2568 (1996).
[Crossref]

Frankel, M. Y.

M. Y. Frankel, B. Tadayon, and T. F. Carruthers, “Integration of low-temperature GaAs on Si substrates,” Appl. Phys. Lett. 62(3), 255–257 (1993).
[Crossref]

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

Fujiwara, S.

Gao, Q.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Gossard, A. C.

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, “Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates,” Appl. Phys. Lett. 75(17), 2575–2577 (1999).
[Crossref]

Gregory, I. S.

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

Gupta, S.

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

Hangyo, M.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Harima, H.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Harmon, E. S.

S. S. Prahbu, S. E. Ralph, M. R. Melloch, and E. S. Harmon, “Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy,” Appl. Phys. Lett. 70(18), 2419–2421 (1997).
[Crossref]

Herz, L. M.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Hu, B. B.

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

Hvam, J. M.

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Ibbetson, J. P.

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, “Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates,” Appl. Phys. Lett. 75(17), 2575–2577 (1999).
[Crossref]

Jacob, F.

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

Jagadish, C.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Johnston, M. B.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Joyce, H. J.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Kadow, C.

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, “Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates,” Appl. Phys. Lett. 75(17), 2575–2577 (1999).
[Crossref]

Kanamoto, K.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Kawano, Y.

Y. Kawano, “Terahertz Waves: A tool for condensed matter, the life sciences and astronomy,” Contemp. Phys. 54(3), 143–165 (2013).
[Crossref]

Kawasaki, N.

M. Tonouchi, N. Kawasaki, T. Yoshimura, H. Wald, and P. Seidel, “Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L706–L709 (2002).
[Crossref]

Kawayama, I.

Keiding, S. R.

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Keller, U.

U. Siegner, R. Fluck, G. Zhang, and U. Keller, “Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide,” Appl. Phys. Lett. 69(17), 2566–2568 (1996).
[Crossref]

Khazan, M.

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

Kiesel, P.

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

Knox, W. H.

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

Kurz, H.

T. Dekorsy, T. Pfeifer, W. Kütt, and H. Kurz, “Subpicosecond carrier transport in GaAs surface-space-charge fields,” Phys. Rev. B Condens. Matter 47(7), 3842–3849 (1993).
[Crossref] [PubMed]

Kütt, W.

T. Dekorsy, T. Pfeifer, W. Kütt, and H. Kurz, “Subpicosecond carrier transport in GaAs surface-space-charge fields,” Phys. Rev. B Condens. Matter 47(7), 3842–3849 (1993).
[Crossref] [PubMed]

Kužel, P.

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

Kuznetsov, A. V.

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

Lampin, J. F.

V. Ortiz, J. Nagle, J. F. Lampin, E. Péronne, and A. Alexandrou, “Low-temperature-grown GaAs: Modeling of transient reflectivity experiments,” J. Appl. Phys. 102(4), 043515 (2007).
[Crossref]

Liliental-Weber, Z.

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

Lindelof, P. E.

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Lloyd-Hughes, J.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Loffler, T.

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

Lyssenko, V. G.

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Ma, S.

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

Melloch, M. R.

S. S. Prahbu, S. E. Ralph, M. R. Melloch, and E. S. Harmon, “Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy,” Appl. Phys. Lett. 70(18), 2419–2421 (1997).
[Crossref]

Mimura, H.

M. Tani, K. Sakai, and H. Mimura, “Ultrafast Photoconductive Detectors Based on Semi-insulating GaAs and InP,” Jpn. J. Appl. Phys. 36(Part 2, No. 9A/B), L1175–L1178 (1997).
[Crossref]

Mourou, G. A.

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

Murakami, H.

Nagle, J.

V. Ortiz, J. Nagle, J. F. Lampin, E. Péronne, and A. Alexandrou, “Low-temperature-grown GaAs: Modeling of transient reflectivity experiments,” J. Appl. Phys. 102(4), 043515 (2007).
[Crossref]

Nakashima, S.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Nemec, H.

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

Nichols, K.

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

Nuss, M. C.

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

Ortiz, V.

V. Ortiz, J. Nagle, J. F. Lampin, E. Péronne, and A. Alexandrou, “Low-temperature-grown GaAs: Modeling of transient reflectivity experiments,” J. Appl. Phys. 102(4), 043515 (2007).
[Crossref]

Othonos, A.

A. Othonos, “Probing ultrafast carrier and phonon dynamics in semiconductors,” J. Appl. Phys. 83(4), 1789–1830 (1998).
[Crossref]

Pashkin, A.

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

Pedersen, J. E.

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Péronne, E.

V. Ortiz, J. Nagle, J. F. Lampin, E. Péronne, and A. Alexandrou, “Low-temperature-grown GaAs: Modeling of transient reflectivity experiments,” J. Appl. Phys. 102(4), 043515 (2007).
[Crossref]

Pfeifer, T.

T. Dekorsy, T. Pfeifer, W. Kütt, and H. Kurz, “Subpicosecond carrier transport in GaAs surface-space-charge fields,” Phys. Rev. B Condens. Matter 47(7), 3842–3849 (1993).
[Crossref] [PubMed]

Prahbu, S. S.

S. S. Prahbu, S. E. Ralph, M. R. Melloch, and E. S. Harmon, “Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy,” Appl. Phys. Lett. 70(18), 2419–2421 (1997).
[Crossref]

Ralph, S. E.

S. S. Prahbu, S. E. Ralph, M. R. Melloch, and E. S. Harmon, “Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy,” Appl. Phys. Lett. 70(18), 2419–2421 (1997).
[Crossref]

Roskos, H. G.

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

Sakai, K.

M. Tani, K. Sakai, and H. Mimura, “Ultrafast Photoconductive Detectors Based on Semi-insulating GaAs and InP,” Jpn. J. Appl. Phys. 36(Part 2, No. 9A/B), L1175–L1178 (1997).
[Crossref]

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Schmuttenmaer, C. A.

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Sub-picosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved THz spectroscopy,” J. Appl. Phys. 90(12), 5915–5923 (2001).
[Crossref]

Schnüll, S.

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

Segschneider, G.

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

Seidel, P.

M. Tonouchi, N. Kawasaki, T. Yoshimura, H. Wald, and P. Seidel, “Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L706–L709 (2002).
[Crossref]

Shi, Y.

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

Siegner, U.

U. Siegner, R. Fluck, G. Zhang, and U. Keller, “Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide,” Appl. Phys. Lett. 69(17), 2566–2568 (1996).
[Crossref]

Smith, F. W.

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

Soref, R. A.

B. R. Bennett, R. A. Soref, and J. A. del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26(1), 113–122 (1990).
[Crossref]

Sorensen, C. B.

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Tadayon, B.

M. Y. Frankel, B. Tadayon, and T. F. Carruthers, “Integration of low-temperature GaAs on Si substrates,” Appl. Phys. Lett. 62(3), 255–257 (1993).
[Crossref]

Tan, H. H.

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Tani, M.

M. Tani, K. Sakai, and H. Mimura, “Ultrafast Photoconductive Detectors Based on Semi-insulating GaAs and InP,” Jpn. J. Appl. Phys. 36(Part 2, No. 9A/B), L1175–L1178 (1997).
[Crossref]

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Tautzz, S.

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

Tey, C. M.

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

Tokuda, Y.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Tonouchi, M.

H. Murakami, S. Fujiwara, I. Kawayama, and M. Tonouchi, “Study of photoexcited-carrier dynamics in GaAs photoconductive switches using dynamic terahertz emission microscopy,” Photon. Res. 4(3), A9–A15 (2016).
[Crossref]

M. Tonouchi, N. Kawasaki, T. Yoshimura, H. Wald, and P. Seidel, “Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L706–L709 (2002).
[Crossref]

Tsukada, N.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

Turner, G. M.

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Sub-picosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved THz spectroscopy,” J. Appl. Phys. 90(12), 5915–5923 (2001).
[Crossref]

Uhd Jepsen, P.

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Valdmanis, J. A.

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

Wald, H.

M. Tonouchi, N. Kawasaki, T. Yoshimura, H. Wald, and P. Seidel, “Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L706–L709 (2002).
[Crossref]

Wang, L.

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

Whitaker, J.

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

Whitaker, J. F.

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

Wilke, I.

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

Xu, X.

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

Yan, W.

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

Yang, Y.

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

Yoshimura, T.

M. Tonouchi, N. Kawasaki, T. Yoshimura, H. Wald, and P. Seidel, “Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L706–L709 (2002).
[Crossref]

Zhang, G.

U. Siegner, R. Fluck, G. Zhang, and U. Keller, “Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide,” Appl. Phys. Lett. 69(17), 2566–2568 (1996).
[Crossref]

Zhang, X.-C.

X.-C. Zhang and D. H. Auston, “Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics,” J. Appl. Phys. 71(1), 326–338 (1992).
[Crossref]

Appl. Phys. Lett. (7)

Y. Shi, X. Xu, Y. Yang, W. Yan, S. Ma, and L. Wang, “Anomalous enhancement of terahertz radiation from semi-insulating GaAs surfaces induced by optical pump,” Appl. Phys. Lett. 89(8), 081129 (2006).
[Crossref]

S. S. Prahbu, S. E. Ralph, M. R. Melloch, and E. S. Harmon, “Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy,” Appl. Phys. Lett. 70(18), 2419–2421 (1997).
[Crossref]

U. Siegner, R. Fluck, G. Zhang, and U. Keller, “Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide,” Appl. Phys. Lett. 69(17), 2566–2568 (1996).
[Crossref]

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, “Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates,” Appl. Phys. Lett. 75(17), 2575–2577 (1999).
[Crossref]

M. Y. Frankel, B. Tadayon, and T. F. Carruthers, “Integration of low-temperature GaAs on Si substrates,” Appl. Phys. Lett. 62(3), 255–257 (1993).
[Crossref]

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59(25), 3276–3278 (1991).
[Crossref]

J. E. Pedersen, V. G. Lyssenko, J. M. Hvam, P. Uhd Jepsen, S. R. Keiding, C. B. Sorensen, and P. E. Lindelof, “Ultrafast local field dynamics in photoconductive THz antennas,” Appl. Phys. Lett. 62(11), 1265–1267 (1993).
[Crossref]

Contemp. Phys. (1)

Y. Kawano, “Terahertz Waves: A tool for condensed matter, the life sciences and astronomy,” Contemp. Phys. 54(3), 143–165 (2013).
[Crossref]

IEEE J. Quantum Electron. (1)

B. R. Bennett, R. A. Soref, and J. A. del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26(1), 113–122 (1990).
[Crossref]

J. Appl. Phys. (5)

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Sub-picosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved THz spectroscopy,” J. Appl. Phys. 90(12), 5915–5923 (2001).
[Crossref]

V. Ortiz, J. Nagle, J. F. Lampin, E. Péronne, and A. Alexandrou, “Low-temperature-grown GaAs: Modeling of transient reflectivity experiments,” J. Appl. Phys. 102(4), 043515 (2007).
[Crossref]

H. Nĕmec, A. Pashkin, P. Kužel, M. Khazan, S. Schnüll, and I. Wilke, “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy,” J. Appl. Phys. 90(3), 1303–1306 (2001).
[Crossref]

A. Othonos, “Probing ultrafast carrier and phonon dynamics in semiconductors,” J. Appl. Phys. 83(4), 1789–1830 (1998).
[Crossref]

X.-C. Zhang and D. H. Auston, “Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics,” J. Appl. Phys. 71(1), 326–338 (1992).
[Crossref]

J. Electron. Mater. (1)

Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, “Structure and carrier lifetime in LT-GaAs,” J. Electron. Mater. 22(12), 1465–1469 (1993).
[Crossref]

Jpn. J. Appl. Phys. (3)

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films,” Jpn. J. Appl. Phys. 33(Part 1, No. 9A), 4807–4811 (1994).
[Crossref]

M. Tani, K. Sakai, and H. Mimura, “Ultrafast Photoconductive Detectors Based on Semi-insulating GaAs and InP,” Jpn. J. Appl. Phys. 36(Part 2, No. 9A/B), L1175–L1178 (1997).
[Crossref]

M. Tonouchi, N. Kawasaki, T. Yoshimura, H. Wald, and P. Seidel, “Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L706–L709 (2002).
[Crossref]

Nanotechnology (1)

H. J. Joyce, C. J. Docherty, Q. Gao, H. H. Tan, C. Jagadish, J. Lloyd-Hughes, L. M. Herz, and M. B. Johnston, “Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy,” Nanotechnology 24(21), 214006 (2013).
[Crossref] [PubMed]

Photon. Res. (1)

Phys. Rev. B (2)

G. Segschneider, F. Jacob, T. Loffler, H. G. Roskos, S. Tautzz, P. Kiesel, and G. Dohler, “Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain THz spectroscopy,” Phys. Rev. B 65(12), 125205 (2002).
[Crossref]

I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, “Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature,” Phys. Rev. B 73(19), 195201 (2006).
[Crossref]

Phys. Rev. B Condens. Matter (1)

T. Dekorsy, T. Pfeifer, W. Kütt, and H. Kurz, “Subpicosecond carrier transport in GaAs surface-space-charge fields,” Phys. Rev. B Condens. Matter 47(7), 3842–3849 (1993).
[Crossref] [PubMed]

Phys. Rev. Lett. (1)

B. B. Hu, W. H. Knox, J. E. Cunningham, M. C. Nuss, A. V. Kuznetsov, S. L. Chuang, S. L. Chuang, and de Souza EA, “Identifying the distinct phases of carrier transport in semiconductors with 10 fs resolution,” Phys. Rev. Lett. 74(9), 1689–1692 (1995).
[Crossref] [PubMed]

Other (1)

P. Gu and M. Tani, “Terahertz Radiation from Semiconductor Surfaces” in Terahertz Optoelectronics, K. Sakai, ed. (Springer-Verlag, 2005).

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Figures (7)

Fig. 1
Fig. 1 Schematic of the “double optical pump” terahertz time-domain emission spectroscopy (DOP THz-TDES) setup. The THz waveform is generated first by scanning the time delay (t1) between the signal-generation pump and probe pulses. Carrier lifetime is measured by fixing the probe pulse delay at the THz emission peak and measuring the time evolution of the signal strength as a function of the time delay (t2) between the carrier-injection pump and signal-generation pump pulses.
Fig. 2
Fig. 2 The THz waveforms of the LT-GaAs samples grown by MBE at 180 °C, 250 °C, and 310 °C. The arrows indicate the THz peak positions. The polarity of the THz waveform of the LT-GaAs sample grown at 180 °C is opposite to the polarity of the THz waveforms of the other two LT-GaAs samples. The THz emission intensity decreased with decreasing growth temperature.
Fig. 3
Fig. 3 The normalized transient photo-reflectance, ΔR/R, curves of the LT-GaAs samples grown by MBE at 180 °C, 250 °C, and 310 °C. The ΔR/R for LT-GaAs grown at 180 °C exhibited polarity reversal with respect to the ΔR/R of the other two LT-GaAs samples.
Fig. 4
Fig. 4 Comparison of the normalized THz emission by DOP THz-TDES and the normalized ΔR/R of the LT-GaAs sample grown by MBE at 310 °C. The exponential fits applied to the curves are also plotted and the calculated time decay constants, τ1 and τ2, for each curve are indicated.
Fig. 5
Fig. 5 Comparison of the normalized THz emission by DOP THz-TDES versus the normalized -ΔR/R of the LT-GaAs sample grown by MBE at 250 °C. The exponential fits applied to the curves are also presented. The calculated τ1 and τ2 decay constants for each curve are also indicated.
Fig. 6
Fig. 6 The normalized THz emission by DOP THz-TDES and the normalized transient photo-reflectance of the LT-GaAs sample grown by MBE at 180 °C. The exponential fits applied to the curves are also plotted. The calculated τ1 and τ2 decay constants for each curve are also presented.
Fig. 7
Fig. 7 Pump power dependence of the carrier lifetime values for the LT-GaAs sample grown at 310 °C. The calculated lifetimes of the THz emission by double optical pump THz-TDS increased with increased signal-generation pump power.

Tables (1)

Tables Icon

Table 1 Summary of the results from the exponential fits applied to the THz emission by DOP THz-TDES and transient photo-reflectance decay curves of the LT-GaAs samples grown at 180 °C, 250 °C, and 310 °Ca

Equations (2)

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E THz J t
f(x)= y 0 + A 1 e (x x 0 )/ τ 1 + A 2 e (x x 0 )/ τ 2

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