Abstract

A novel tunable dual mode laser is proposed based on a double-layer Bragg grating structure, named double-layer grating distributed Bragg reflector (DLG-DBR) laser. With controlling the gain saturation condition, different oscillating states can be observed. The nonlinear dynamics characteristics including bifurcation of the laser under optical injection with two different start-up sequences are analyzed with numerical simulations. Furthermore, we investigate the lasing wavelength bistability of the laser combined with its tuning characteristics theoretically. Optical memory operation based on the external optical injection locking bistability of the dual mode device is proposed. The memory operation can be achieved in the whole wavelength window with a 10 nm tuning range. A mode suppression ratio (MSR) of more than 45 dB is achieved between the two bistable states.

© 2016 Optical Society of America

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  1. S. Osborne, K. Buckley, A. Amann, and S. O’Brien, “All-optical memory based on the injection locking bistability of a two-color laser diode,” Opt. Express 17(8), 6293–6300 (2009).
    [Crossref] [PubMed]
  2. C. Laperle, M. Svilans, M. Poirier, and M. Tetu, “Frequency multiplication of microwave signals by sideband optical injection locking using a monolithic dual-wavelength DFB laser device,” IEEE Trans. Microw. Theory Tech. 47(7), 1219–1224 (1999).
    [Crossref]
  3. P. Heinricht, N. Brandonisio, S. O’Brien, and S. Osborne, “Fast Wavelength Switching of a Dual-Contact Two-Color Semiconductor Laser With Current Modulation,” IEEE Photonics Technol. Lett. 23(8), 513–515 (2011).
    [Crossref]
  4. F. Pozzi, R. M. De La Rue, and M. Sorel, “Dual-Wavelength InAlGaAs–InP Laterally Coupled Distributed Feedback Laser,” IEEE Photonics Technol. Lett. 18(24), 2563–2565 (2006).
  5. S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
    [Crossref]
  6. S. Shutts, P. M. Smowton, and A. B. Krysa, “Dual-wavelength InP quantum dot lasers,” Appl. Phys. Lett. 104(24), 241106 (2014).
    [Crossref]
  7. R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
    [Crossref]
  8. P. K. A. Wai, L. Xu, L. F. K. Lui, L. Y. Chan, C. C. Lee, H. Y. Tam, and M. S. Demokan, “All-optical add-drop node for optical packet-switched networks,” Opt. Lett. 30(12), 1515–1517 (2005).
    [Crossref] [PubMed]
  9. Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
    [Crossref]
  10. L. Gan, J. Liu, F. Li, and P. K. A. Wai, “An Optical Millimeter-wave Generator Using Optical Higher-order Sideband Injection Locking in a Fabry-Pérot Laser Diode,” J. Lightwave Technol. 33(23), 4985–4996 (2015).
    [Crossref]
  11. A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).
  12. K. Huybrechts, G. Morthier, and R. Baets, “Fast all-optical flip-flop based on a single distributed feedback laser diode,” Opt. Express 16(15), 11405–11410 (2008).
    [Crossref] [PubMed]
  13. K. Inoue and M. Yoshino, “Bistability and wave-form reshaping in a DFB-LD with side-mode light injection,” IEEE Photonics Technol. Lett. 7(2), 164–166 (1995).
    [Crossref]
  14. I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
    [Crossref]
  15. A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm Vertical-Cavity Surface-Emitting Lasers (VCSELs),” Opt. Express 18(9), 9423–9428 (2010).
    [Crossref] [PubMed]
  16. R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
    [Crossref]
  17. K. Huybrechts, R. Baets, and G. Morthier, “All-Optical Flip-Flop Operation in a Standard Tunable DBR Laser Diode,” IEEE Photonics Technol. Lett. 21(24), 1873–1875 (2009).
    [Crossref]
  18. T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
    [Crossref]
  19. H. Kawaguchi, “Bistable Laser Diodes and Their Applications: State of the Art,” IEEE J. Sel. Top. Quantum Electron. 3(5), 1254–1270 (1997).
    [Crossref]
  20. A. Murakami, “Phase Locking and Chaos Synchronization in Injection-Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 39(3), 438–447 (2003).
    [Crossref]
  21. E. K. Lau, H.-K. Sung, and M. C. Wu, “Frequency Response Enhancement of Optical Injection-Locked Lasers,” IEEE J. Quantum Electron. 44(1), 90–99 (2008).
    [Crossref]
  22. L. Zhang and J. C. Cartledge, “Fast Wavelength Switching of Three-Section DBR Lasers,” IEEE J. Quantum Electron. 31(1), 75–81 (1995).
    [Crossref]
  23. H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
    [Crossref]
  24. J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
    [Crossref]
  25. M. M. Krstić, J. V. Crnjanski, and D. M. Gvozdic, “Injection Power and Detuning-Dependent Bistability in Fabry-Perot Laser Diodes,” IEEE J. Sel. Top. Quantum Electron. 18(2), 826–833 (2012).
    [Crossref]
  26. A. Murakami, “Synchronization of chaos due to linear response in optically driven semiconductor lasers,” Phys. Rev. E Stat. Nonlin. Soft Matter Phys. 65(5), 056617 (2002).
    [Crossref] [PubMed]
  27. T. Erneux, V. Kovanis, A. Gavrielides, and P. M. Alsing, “Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection,” Phys. Rev. A 53(6), 4372–4380 (1996).
    [Crossref] [PubMed]
  28. S. Wieczorek, B. Krauskopf, T. B. Simpson, and D. Lenstra, “The dynamical complexity of optically injected semiconductor lasers,” Phys. Rep. 416(1-2), 1–128 (2005).
    [Crossref]
  29. E. K. Lau, L. J. Wong, and M. C. Wu, “Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial,” IEEE J. Sel. Top. Quantum Electron. 15(3), 618–633 (2009).
    [Crossref]
  30. Y. An, A. L. Riesgo, C. Peucheret, and G. Morthier, “Wavelength Tunable Flip-Flop Operation of a Modulated Grating Y-branch Laser,” Proceedings of International Conference on Photonics in Switching, (Ajaccio, 2012), pp. 1–4.

2015 (2)

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

L. Gan, J. Liu, F. Li, and P. K. A. Wai, “An Optical Millimeter-wave Generator Using Optical Higher-order Sideband Injection Locking in a Fabry-Pérot Laser Diode,” J. Lightwave Technol. 33(23), 4985–4996 (2015).
[Crossref]

2014 (2)

S. Shutts, P. M. Smowton, and A. B. Krysa, “Dual-wavelength InP quantum dot lasers,” Appl. Phys. Lett. 104(24), 241106 (2014).
[Crossref]

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

2013 (2)

A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).

J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
[Crossref]

2012 (1)

M. M. Krstić, J. V. Crnjanski, and D. M. Gvozdic, “Injection Power and Detuning-Dependent Bistability in Fabry-Perot Laser Diodes,” IEEE J. Sel. Top. Quantum Electron. 18(2), 826–833 (2012).
[Crossref]

2011 (3)

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

P. Heinricht, N. Brandonisio, S. O’Brien, and S. Osborne, “Fast Wavelength Switching of a Dual-Contact Two-Color Semiconductor Laser With Current Modulation,” IEEE Photonics Technol. Lett. 23(8), 513–515 (2011).
[Crossref]

2010 (1)

2009 (3)

S. Osborne, K. Buckley, A. Amann, and S. O’Brien, “All-optical memory based on the injection locking bistability of a two-color laser diode,” Opt. Express 17(8), 6293–6300 (2009).
[Crossref] [PubMed]

E. K. Lau, L. J. Wong, and M. C. Wu, “Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial,” IEEE J. Sel. Top. Quantum Electron. 15(3), 618–633 (2009).
[Crossref]

K. Huybrechts, R. Baets, and G. Morthier, “All-Optical Flip-Flop Operation in a Standard Tunable DBR Laser Diode,” IEEE Photonics Technol. Lett. 21(24), 1873–1875 (2009).
[Crossref]

2008 (2)

E. K. Lau, H.-K. Sung, and M. C. Wu, “Frequency Response Enhancement of Optical Injection-Locked Lasers,” IEEE J. Quantum Electron. 44(1), 90–99 (2008).
[Crossref]

K. Huybrechts, G. Morthier, and R. Baets, “Fast all-optical flip-flop based on a single distributed feedback laser diode,” Opt. Express 16(15), 11405–11410 (2008).
[Crossref] [PubMed]

2007 (1)

R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
[Crossref]

2006 (2)

F. Pozzi, R. M. De La Rue, and M. Sorel, “Dual-Wavelength InAlGaAs–InP Laterally Coupled Distributed Feedback Laser,” IEEE Photonics Technol. Lett. 18(24), 2563–2565 (2006).

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
[Crossref]

2005 (2)

P. K. A. Wai, L. Xu, L. F. K. Lui, L. Y. Chan, C. C. Lee, H. Y. Tam, and M. S. Demokan, “All-optical add-drop node for optical packet-switched networks,” Opt. Lett. 30(12), 1515–1517 (2005).
[Crossref] [PubMed]

S. Wieczorek, B. Krauskopf, T. B. Simpson, and D. Lenstra, “The dynamical complexity of optically injected semiconductor lasers,” Phys. Rep. 416(1-2), 1–128 (2005).
[Crossref]

2003 (1)

A. Murakami, “Phase Locking and Chaos Synchronization in Injection-Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 39(3), 438–447 (2003).
[Crossref]

2002 (1)

A. Murakami, “Synchronization of chaos due to linear response in optically driven semiconductor lasers,” Phys. Rev. E Stat. Nonlin. Soft Matter Phys. 65(5), 056617 (2002).
[Crossref] [PubMed]

2000 (1)

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

1999 (1)

C. Laperle, M. Svilans, M. Poirier, and M. Tetu, “Frequency multiplication of microwave signals by sideband optical injection locking using a monolithic dual-wavelength DFB laser device,” IEEE Trans. Microw. Theory Tech. 47(7), 1219–1224 (1999).
[Crossref]

1997 (1)

H. Kawaguchi, “Bistable Laser Diodes and Their Applications: State of the Art,” IEEE J. Sel. Top. Quantum Electron. 3(5), 1254–1270 (1997).
[Crossref]

1996 (1)

T. Erneux, V. Kovanis, A. Gavrielides, and P. M. Alsing, “Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection,” Phys. Rev. A 53(6), 4372–4380 (1996).
[Crossref] [PubMed]

1995 (2)

L. Zhang and J. C. Cartledge, “Fast Wavelength Switching of Three-Section DBR Lasers,” IEEE J. Quantum Electron. 31(1), 75–81 (1995).
[Crossref]

K. Inoue and M. Yoshino, “Bistability and wave-form reshaping in a DFB-LD with side-mode light injection,” IEEE Photonics Technol. Lett. 7(2), 164–166 (1995).
[Crossref]

Adams, M. J.

A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm Vertical-Cavity Surface-Emitting Lasers (VCSELs),” Opt. Express 18(9), 9423–9428 (2010).
[Crossref] [PubMed]

Al-Seyab, R.

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

Alsing, P. M.

T. Erneux, V. Kovanis, A. Gavrielides, and P. M. Alsing, “Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection,” Phys. Rev. A 53(6), 4372–4380 (1996).
[Crossref] [PubMed]

Amann, A.

An, Y.

Y. An, A. L. Riesgo, C. Peucheret, and G. Morthier, “Wavelength Tunable Flip-Flop Operation of a Modulated Grating Y-branch Laser,” Proceedings of International Conference on Photonics in Switching, (Ajaccio, 2012), pp. 1–4.

Baets, R.

K. Huybrechts, R. Baets, and G. Morthier, “All-Optical Flip-Flop Operation in a Standard Tunable DBR Laser Diode,” IEEE Photonics Technol. Lett. 21(24), 1873–1875 (2009).
[Crossref]

K. Huybrechts, G. Morthier, and R. Baets, “Fast all-optical flip-flop based on a single distributed feedback laser diode,” Opt. Express 16(15), 11405–11410 (2008).
[Crossref] [PubMed]

Barry, L. P.

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

Brandonisio, N.

P. Heinricht, N. Brandonisio, S. O’Brien, and S. Osborne, “Fast Wavelength Switching of a Dual-Contact Two-Color Semiconductor Laser With Current Modulation,” IEEE Photonics Technol. Lett. 23(8), 513–515 (2011).
[Crossref]

Buckley, K.

Buesa, J.

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
[Crossref]

Cartledge, J. C.

L. Zhang and J. C. Cartledge, “Fast Wavelength Switching of Three-Section DBR Lasers,” IEEE J. Quantum Electron. 31(1), 75–81 (1995).
[Crossref]

Chan, L. Y.

Coleman, J. J.

R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
[Crossref]

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

Crnjanski, J. V.

M. M. Krstić, J. V. Crnjanski, and D. M. Gvozdic, “Injection Power and Detuning-Dependent Bistability in Fabry-Perot Laser Diodes,” IEEE J. Sel. Top. Quantum Electron. 18(2), 826–833 (2012).
[Crossref]

De La Rue, R. M.

F. Pozzi, R. M. De La Rue, and M. Sorel, “Dual-Wavelength InAlGaAs–InP Laterally Coupled Distributed Feedback Laser,” IEEE Photonics Technol. Lett. 18(24), 2563–2565 (2006).

Demokan, M. S.

Elarde, V. C.

R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
[Crossref]

Erneux, T.

T. Erneux, V. Kovanis, A. Gavrielides, and P. M. Alsing, “Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection,” Phys. Rev. A 53(6), 4372–4380 (1996).
[Crossref] [PubMed]

Gan, L.

L. Gan, J. Liu, F. Li, and P. K. A. Wai, “An Optical Millimeter-wave Generator Using Optical Higher-order Sideband Injection Locking in a Fabry-Pérot Laser Diode,” J. Lightwave Technol. 33(23), 4985–4996 (2015).
[Crossref]

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

Gatare, I.

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
[Crossref]

Gavrielides, A.

T. Erneux, V. Kovanis, A. Gavrielides, and P. M. Alsing, “Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection,” Phys. Rev. A 53(6), 4372–4380 (1996).
[Crossref] [PubMed]

Gvozdic, D. M.

M. M. Krstić, J. V. Crnjanski, and D. M. Gvozdic, “Injection Power and Detuning-Dependent Bistability in Fabry-Perot Laser Diodes,” IEEE J. Sel. Top. Quantum Electron. 18(2), 826–833 (2012).
[Crossref]

Hamamoto, K.

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

Heinricht, P.

P. Heinricht, N. Brandonisio, S. O’Brien, and S. Osborne, “Fast Wavelength Switching of a Dual-Contact Two-Color Semiconductor Laser With Current Modulation,” IEEE Photonics Technol. Lett. 23(8), 513–515 (2011).
[Crossref]

Henning, I. D.

A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

Hu, S.

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
[Crossref]

Huber, A. E.

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

Hughes, J. S.

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

Hurtado, A.

A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm Vertical-Cavity Surface-Emitting Lasers (VCSELs),” Opt. Express 18(9), 9423–9428 (2010).
[Crossref] [PubMed]

Huybrechts, K.

K. Huybrechts, R. Baets, and G. Morthier, “All-Optical Flip-Flop Operation in a Standard Tunable DBR Laser Diode,” IEEE Photonics Technol. Lett. 21(24), 1873–1875 (2009).
[Crossref]

K. Huybrechts, G. Morthier, and R. Baets, “Fast all-optical flip-flop based on a single distributed feedback laser diode,” Opt. Express 16(15), 11405–11410 (2008).
[Crossref] [PubMed]

Inoue, K.

K. Inoue and M. Yoshino, “Bistability and wave-form reshaping in a DFB-LD with side-mode light injection,” IEEE Photonics Technol. Lett. 7(2), 164–166 (1995).
[Crossref]

Kakitsuka, T.

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

Kawaguchi, H.

H. Kawaguchi, “Bistable Laser Diodes and Their Applications: State of the Art,” IEEE J. Sel. Top. Quantum Electron. 3(5), 1254–1270 (1997).
[Crossref]

Khan, N. A.

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

Kovanis, V.

T. Erneux, V. Kovanis, A. Gavrielides, and P. M. Alsing, “Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection,” Phys. Rev. A 53(6), 4372–4380 (1996).
[Crossref] [PubMed]

Krauskopf, B.

S. Wieczorek, B. Krauskopf, T. B. Simpson, and D. Lenstra, “The dynamical complexity of optically injected semiconductor lasers,” Phys. Rep. 416(1-2), 1–128 (2005).
[Crossref]

Krstic, M. M.

M. M. Krstić, J. V. Crnjanski, and D. M. Gvozdic, “Injection Power and Detuning-Dependent Bistability in Fabry-Perot Laser Diodes,” IEEE J. Sel. Top. Quantum Electron. 18(2), 826–833 (2012).
[Crossref]

Krysa, A. B.

S. Shutts, P. M. Smowton, and A. B. Krysa, “Dual-wavelength InP quantum dot lasers,” Appl. Phys. Lett. 104(24), 241106 (2014).
[Crossref]

Laperle, C.

C. Laperle, M. Svilans, M. Poirier, and M. Tetu, “Frequency multiplication of microwave signals by sideband optical injection locking using a monolithic dual-wavelength DFB laser device,” IEEE Trans. Microw. Theory Tech. 47(7), 1219–1224 (1999).
[Crossref]

Lau, E. K.

E. K. Lau, L. J. Wong, and M. C. Wu, “Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial,” IEEE J. Sel. Top. Quantum Electron. 15(3), 618–633 (2009).
[Crossref]

E. K. Lau, H.-K. Sung, and M. C. Wu, “Frequency Response Enhancement of Optical Injection-Locked Lasers,” IEEE J. Quantum Electron. 44(1), 90–99 (2008).
[Crossref]

Lee, C. C.

Lenstra, D.

S. Wieczorek, B. Krauskopf, T. B. Simpson, and D. Lenstra, “The dynamical complexity of optically injected semiconductor lasers,” Phys. Rep. 416(1-2), 1–128 (2005).
[Crossref]

Lester, L. F.

A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).

Li, F.

L. Gan, J. Liu, F. Li, and P. K. A. Wai, “An Optical Millimeter-wave Generator Using Optical Higher-order Sideband Injection Locking in a Fabry-Pérot Laser Diode,” J. Lightwave Technol. 33(23), 4985–4996 (2015).
[Crossref]

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

Liu, J.

L. Gan, J. Liu, F. Li, and P. K. A. Wai, “An Optical Millimeter-wave Generator Using Optical Higher-order Sideband Injection Locking in a Fabry-Pérot Laser Diode,” J. Lightwave Technol. 33(23), 4985–4996 (2015).
[Crossref]

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

Lu, C.

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

Lui, L. F. K.

Luo, Y.

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

Matsuo, S.

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

Morthier, G.

K. Huybrechts, R. Baets, and G. Morthier, “All-Optical Flip-Flop Operation in a Standard Tunable DBR Laser Diode,” IEEE Photonics Technol. Lett. 21(24), 1873–1875 (2009).
[Crossref]

K. Huybrechts, G. Morthier, and R. Baets, “Fast all-optical flip-flop based on a single distributed feedback laser diode,” Opt. Express 16(15), 11405–11410 (2008).
[Crossref] [PubMed]

Y. An, A. L. Riesgo, C. Peucheret, and G. Morthier, “Wavelength Tunable Flip-Flop Operation of a Modulated Grating Y-branch Laser,” Proceedings of International Conference on Photonics in Switching, (Ajaccio, 2012), pp. 1–4.

Murakami, A.

A. Murakami, “Phase Locking and Chaos Synchronization in Injection-Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 39(3), 438–447 (2003).
[Crossref]

A. Murakami, “Synchronization of chaos due to linear response in optically driven semiconductor lasers,” Phys. Rev. E Stat. Nonlin. Soft Matter Phys. 65(5), 056617 (2002).
[Crossref] [PubMed]

Nami, M.

A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).

O’Brien, S.

P. Heinricht, N. Brandonisio, S. O’Brien, and S. Osborne, “Fast Wavelength Switching of a Dual-Contact Two-Color Semiconductor Laser With Current Modulation,” IEEE Photonics Technol. Lett. 23(8), 513–515 (2011).
[Crossref]

S. Osborne, K. Buckley, A. Amann, and S. O’Brien, “All-optical memory based on the injection locking bistability of a two-color laser diode,” Opt. Express 17(8), 6293–6300 (2009).
[Crossref] [PubMed]

Osborne, S.

P. Heinricht, N. Brandonisio, S. O’Brien, and S. Osborne, “Fast Wavelength Switching of a Dual-Contact Two-Color Semiconductor Laser With Current Modulation,” IEEE Photonics Technol. Lett. 23(8), 513–515 (2011).
[Crossref]

S. Osborne, K. Buckley, A. Amann, and S. O’Brien, “All-optical memory based on the injection locking bistability of a two-color laser diode,” Opt. Express 17(8), 6293–6300 (2009).
[Crossref] [PubMed]

Panajotov, K.

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
[Crossref]

Pesquera, L.

Peucheret, C.

Y. An, A. L. Riesgo, C. Peucheret, and G. Morthier, “Wavelength Tunable Flip-Flop Operation of a Modulated Grating Y-branch Laser,” Proceedings of International Conference on Photonics in Switching, (Ajaccio, 2012), pp. 1–4.

Ping, K. A. W.

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

Poirier, M.

C. Laperle, M. Svilans, M. Poirier, and M. Tetu, “Frequency multiplication of microwave signals by sideband optical injection locking using a monolithic dual-wavelength DFB laser device,” IEEE Trans. Microw. Theory Tech. 47(7), 1219–1224 (1999).
[Crossref]

Pozzi, F.

F. Pozzi, R. M. De La Rue, and M. Sorel, “Dual-Wavelength InAlGaAs–InP Laterally Coupled Distributed Feedback Laser,” IEEE Photonics Technol. Lett. 18(24), 2563–2565 (2006).

Price, R. K.

R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
[Crossref]

Quirce, A.

Riesgo, A. L.

Y. An, A. L. Riesgo, C. Peucheret, and G. Morthier, “Wavelength Tunable Flip-Flop Operation of a Modulated Grating Y-branch Laser,” Proceedings of International Conference on Photonics in Switching, (Ajaccio, 2012), pp. 1–4.

Roh, S. D.

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

Schires, K.

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

Sciamanna, M.

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
[Crossref]

Segawa, T.

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

Shutts, S.

S. Shutts, P. M. Smowton, and A. B. Krysa, “Dual-wavelength InP quantum dot lasers,” Appl. Phys. Lett. 104(24), 241106 (2014).
[Crossref]

Simpson, T. B.

S. Wieczorek, B. Krauskopf, T. B. Simpson, and D. Lenstra, “The dynamical complexity of optically injected semiconductor lasers,” Phys. Rep. 416(1-2), 1–128 (2005).
[Crossref]

Smowton, P. M.

S. Shutts, P. M. Smowton, and A. B. Krysa, “Dual-wavelength InP quantum dot lasers,” Appl. Phys. Lett. 104(24), 241106 (2014).
[Crossref]

Sorel, M.

F. Pozzi, R. M. De La Rue, and M. Sorel, “Dual-Wavelength InAlGaAs–InP Laterally Coupled Distributed Feedback Laser,” IEEE Photonics Technol. Lett. 18(24), 2563–2565 (2006).

Sung, H.-K.

E. K. Lau, H.-K. Sung, and M. C. Wu, “Frequency Response Enhancement of Optical Injection-Locked Lasers,” IEEE J. Quantum Electron. 44(1), 90–99 (2008).
[Crossref]

Suzuki, H.

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

Svilans, M.

C. Laperle, M. Svilans, M. Poirier, and M. Tetu, “Frequency multiplication of microwave signals by sideband optical injection locking using a monolithic dual-wavelength DFB laser device,” IEEE Trans. Microw. Theory Tech. 47(7), 1219–1224 (1999).
[Crossref]

Swint, R. B.

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

Takahashi, R.

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

Tam, H. Y.

Tang, Y.

J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
[Crossref]

Tetu, M.

C. Laperle, M. Svilans, M. Poirier, and M. Tetu, “Frequency multiplication of microwave signals by sideband optical injection locking using a monolithic dual-wavelength DFB laser device,” IEEE Trans. Microw. Theory Tech. 47(7), 1219–1224 (1999).
[Crossref]

Thienpont, H.

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
[Crossref]

Tobin, K. E.

R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
[Crossref]

Valle, A.

Verma, V. B.

R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
[Crossref]

Wai, P. K. A.

Wieczorek, S.

S. Wieczorek, B. Krauskopf, T. B. Simpson, and D. Lenstra, “The dynamical complexity of optically injected semiconductor lasers,” Phys. Rep. 416(1-2), 1–128 (2005).
[Crossref]

Wong, L. J.

E. K. Lau, L. J. Wong, and M. C. Wu, “Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial,” IEEE J. Sel. Top. Quantum Electron. 15(3), 618–633 (2009).
[Crossref]

Woo, C. Y.

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

Wu, M. C.

E. K. Lau, L. J. Wong, and M. C. Wu, “Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial,” IEEE J. Sel. Top. Quantum Electron. 15(3), 618–633 (2009).
[Crossref]

E. K. Lau, H.-K. Sung, and M. C. Wu, “Frequency Response Enhancement of Optical Injection-Locked Lasers,” IEEE J. Quantum Electron. 44(1), 90–99 (2008).
[Crossref]

Xu, L.

Yeoh, T. S.

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

Yoshino, M.

K. Inoue and M. Yoshino, “Bistability and wave-form reshaping in a DFB-LD with side-mode light injection,” IEEE Photonics Technol. Lett. 7(2), 164–166 (1995).
[Crossref]

Yu, Y.

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
[Crossref]

Zhang, L.

L. Zhang and J. C. Cartledge, “Fast Wavelength Switching of Three-Section DBR Lasers,” IEEE J. Quantum Electron. 31(1), 75–81 (1995).
[Crossref]

Zhao, H.

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
[Crossref]

Zhao, J.

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
[Crossref]

Zhu, Y.

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

Appl. Phys. Lett. (2)

S. Shutts, P. M. Smowton, and A. B. Krysa, “Dual-wavelength InP quantum dot lasers,” Appl. Phys. Lett. 104(24), 241106 (2014).
[Crossref]

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov, “Nonlinear dynamics accompanying polar-ization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection,” Appl. Phys. Lett. 88(10), 101106 (2006).
[Crossref]

IEEE J. Quantum Electron. (3)

A. Murakami, “Phase Locking and Chaos Synchronization in Injection-Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 39(3), 438–447 (2003).
[Crossref]

E. K. Lau, H.-K. Sung, and M. C. Wu, “Frequency Response Enhancement of Optical Injection-Locked Lasers,” IEEE J. Quantum Electron. 44(1), 90–99 (2008).
[Crossref]

L. Zhang and J. C. Cartledge, “Fast Wavelength Switching of Three-Section DBR Lasers,” IEEE J. Quantum Electron. 31(1), 75–81 (1995).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (5)

H. Kawaguchi, “Bistable Laser Diodes and Their Applications: State of the Art,” IEEE J. Sel. Top. Quantum Electron. 3(5), 1254–1270 (1997).
[Crossref]

M. M. Krstić, J. V. Crnjanski, and D. M. Gvozdic, “Injection Power and Detuning-Dependent Bistability in Fabry-Perot Laser Diodes,” IEEE J. Sel. Top. Quantum Electron. 18(2), 826–833 (2012).
[Crossref]

A. Hurtado, M. Nami, I. D. Henning, M. J. Adams, and L. F. Lester, “Two-Wavelength Switching With a 1310-nm Quantum Dot Distributed Feedback Laser,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1900708 (2013).

R. Al-Seyab, K. Schires, N. A. Khan, A. Hurtado, I. D. Henning, and M. J. Adams, “Dynamics of Polarized Optical Injection in 1550-nm VCSELs: Theory and Experiments,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1242–1249 (2011).
[Crossref]

E. K. Lau, L. J. Wong, and M. C. Wu, “Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial,” IEEE J. Sel. Top. Quantum Electron. 15(3), 618–633 (2009).
[Crossref]

IEEE Photonics J. (2)

H. Zhao, S. Hu, J. Zhao, Y. Zhu, Y. Yu, and L. P. Barry, “Chirp-Compensated DBR Lasers for TWDM-PON Applications,” IEEE Photonics J. 7(1), 7900809 (2015).
[Crossref]

J. Zhao, S. Hu, Y. Tang, H. Zhao, and Y. Yu, “Widely Tunable Semiconductor Laser Based on Digital Concatenated Grating With Multiple Phase Shifts,” IEEE Photonics J. 5(5), 1502008 (2013).
[Crossref]

IEEE Photonics Technol. Lett. (8)

K. Huybrechts, R. Baets, and G. Morthier, “All-Optical Flip-Flop Operation in a Standard Tunable DBR Laser Diode,” IEEE Photonics Technol. Lett. 21(24), 1873–1875 (2009).
[Crossref]

T. Kakitsuka, S. Matsuo, K. Hamamoto, T. Segawa, H. Suzuki, and R. Takahashi, “Injection-Locked Flip-Flop Operation of a DBR Laser,” IEEE Photonics Technol. Lett. 23(17), 1261–1263 (2011).
[Crossref]

R. K. Price, V. B. Verma, K. E. Tobin, V. C. Elarde, and J. J. Coleman, “Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning,” IEEE Photonics Technol. Lett. 19(20), 1610–1612 (2007).
[Crossref]

Y. Luo, F. Li, J. Liu, L. Gan, C. Lu, and K. A. W. Ping, “10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry–Pérot Laser Diodes,” IEEE Photonics Technol. Lett. 26(22), 2299–2302 (2014).
[Crossref]

P. Heinricht, N. Brandonisio, S. O’Brien, and S. Osborne, “Fast Wavelength Switching of a Dual-Contact Two-Color Semiconductor Laser With Current Modulation,” IEEE Photonics Technol. Lett. 23(8), 513–515 (2011).
[Crossref]

F. Pozzi, R. M. De La Rue, and M. Sorel, “Dual-Wavelength InAlGaAs–InP Laterally Coupled Distributed Feedback Laser,” IEEE Photonics Technol. Lett. 18(24), 2563–2565 (2006).

S. D. Roh, T. S. Yeoh, R. B. Swint, A. E. Huber, C. Y. Woo, J. S. Hughes, and J. J. Coleman, “Dual-Wavelength InGaAs–GaAs Ridge Waveguide Distributed Bragg Reflector Lasers with Tunable Mode Separation,” IEEE Photonics Technol. Lett. 12(10), 1307–1309 (2000).
[Crossref]

K. Inoue and M. Yoshino, “Bistability and wave-form reshaping in a DFB-LD with side-mode light injection,” IEEE Photonics Technol. Lett. 7(2), 164–166 (1995).
[Crossref]

IEEE Trans. Microw. Theory Tech. (1)

C. Laperle, M. Svilans, M. Poirier, and M. Tetu, “Frequency multiplication of microwave signals by sideband optical injection locking using a monolithic dual-wavelength DFB laser device,” IEEE Trans. Microw. Theory Tech. 47(7), 1219–1224 (1999).
[Crossref]

J. Lightwave Technol. (1)

Opt. Express (3)

Opt. Lett. (1)

Phys. Rep. (1)

S. Wieczorek, B. Krauskopf, T. B. Simpson, and D. Lenstra, “The dynamical complexity of optically injected semiconductor lasers,” Phys. Rep. 416(1-2), 1–128 (2005).
[Crossref]

Phys. Rev. A (1)

T. Erneux, V. Kovanis, A. Gavrielides, and P. M. Alsing, “Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection,” Phys. Rev. A 53(6), 4372–4380 (1996).
[Crossref] [PubMed]

Phys. Rev. E Stat. Nonlin. Soft Matter Phys. (1)

A. Murakami, “Synchronization of chaos due to linear response in optically driven semiconductor lasers,” Phys. Rev. E Stat. Nonlin. Soft Matter Phys. 65(5), 056617 (2002).
[Crossref] [PubMed]

Other (1)

Y. An, A. L. Riesgo, C. Peucheret, and G. Morthier, “Wavelength Tunable Flip-Flop Operation of a Modulated Grating Y-branch Laser,” Proceedings of International Conference on Photonics in Switching, (Ajaccio, 2012), pp. 1–4.

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Figures (9)

Fig. 1
Fig. 1 (a) Schematic of the DLG-DBR laser. (b) The reflectivity spectrum of the double-layer Bragg grating with double grating periods Λ1 = 228 nm and Λ2 = 229 nm.
Fig. 2
Fig. 2 Flow diagrams of two-mode competition for (a) strong coupling (εself = 0.7 × 10−23 m3, εcross = 1 × 10−23 m3) and (b) weak coupling (εself = 1 × 10−23 m3, εcross = 0.7 × 10−23 m3) at four different phase currents Ip.
Fig. 3
Fig. 3 The wavelength tuning characteristics of the laser in the moderate coupling case (εself = εcross = 1 × 10−23 m3). (a) and (b) show variations of the peak positions of the two lasing modes with the increasing of phase current and grating current, respectively. The higher and lower power modes are indicated by red and blue circle marks. (c) and (d) show the power variations of the two lasing modes versus phase current and grating current respectively. The grating current is fixed to 10 mA in (a) and (c) and the phase current is fixed to 6 mA in (b) and (d).
Fig. 4
Fig. 4 A representative configuration of an optical injected double-layer grating DBR laser.
Fig. 5
Fig. 5 Bifurcation diagram showing the equilibrium state extrema of the dimensionless field magnitude indicating the two lasing modes of the optically-injected DLG-DBR laser. For strong coupling case, εself = 0.7 × 10−23 m3,εcross = 1 × 10−23 m3; for moderate coupling case, εself = εcross = 1 × 10−23 m3. The value of injection ratio Rinj = 0.13. The current of phase and grating section are biased at 6 mA and 10 mA respectively.
Fig. 6
Fig. 6 Bifurcation diagram as a function of injection ratio indicating the two lasing modes of the optically-injected DLG-DBR laser. For strong coupling case, εself = 0.7 × 10−23 m3,εcross = 1 × 10−23 m3; for moderate coupling case, εself = εcross = 1 × 10−23 m3. The value of detuning frequency Δf = −20GHz. The current of phase and grating section are biased at 6 mA and 10 mA respectively.
Fig. 7
Fig. 7 Region of multiple stationary points on the injection-locking diagram
Fig. 8
Fig. 8 The bistability characteristics of the injection locked double-layer grating DBR laser for the grating current Ig changes from 10 mA to 24 mA .The phase current is biased at 6 mA. The detuning frequency Δf = −20 GHz. The four insets indicate the spectrum of the modes in the laser which operates at unlocked state.
Fig. 9
Fig. 9 Left panel: The bistability characteristics of the injection locked double-layer grating DBR laser, Ip = 6 mA, Ig = 10 mA. Right panels: Numerical intensity time traces of the injection ratio and of the two primary modes of the laser.

Tables (1)

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Table 1 The values of parameters used in the model

Equations (6)

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d E m dt = 1 2 ( 1+iα )[ G n ( N N 0 ) 1+ j ε m,j S j 1 τ m + β sp R sp S m ] E m +κ A inj exp( iΔ ω m t ),
dN dt = I a qV ( AN+B N 2 +C N 3 ) n G n ( N N 0 ) S n 1+ k ε n,k S k ,
d S m dt =[ G n ( N N 0 ) 1+ j ε m,j S j 1 τ m ] S m +2κ S S inj m cos ϕ m + β sp R sp ,
d S k dt =[ G n ( N N 0 ) 1+ j ε k,j S j 1 τ k ] S k + β sp R sp ,
d ϕ m dt = α 2 [ G n ( N N 0 ) 1+ j ε m,j S j 1 τ m ]κ S inj S m sin ϕ m Δω
P inj ( t )={ P 0/1 ± 1 2 ( P 1 P 0 ){ 1+ tμ s + 1 π sin tμ s π },rising/faillingedge P 0/1 ,pulse duration

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