Abstract

By simultaneously employing electro-optic (EO) modulator and Bi-doped GaAs, dual-loss-modulated Q-switched and mode-locked (QML) multi-segment composite Nd:YVO4/Nd:YVO4/Nd:YVO4/KTP sub-nanosecond green laser is demonstrated with low repetition rate and high peak power. When the incident pump power is up to 6.93 W, only one mode-locking pulse underneath a Q-switching envelope is generated with sub-nanosecond pulse duration at one kilohertz repetition rate. An average output power of 445 mW and a pulse duration of 399 ps are obtained with the incident pump power of 11.13 W, corresponding to a peak power of 1.115 MW which is the highest one in doubly QML sub-nanosecond green laser by now. The laser characteristics are better than those obtained with EO and GaAs. The experimental results indicate that Bi-GaAs is a promising saturable absorber for dual-loss-modulated QML laser.

© 2016 Optical Society of America

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    [Crossref]
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2015 (2)

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

S. X. Li, G. Q. Li, S. Z. Zhao, and X. M. Wang, “Theoretical and experimental study on high peak power sub-nanosecond pulse characteristics of multi-segment composite Nd:YVO4 laser,” IEEE J. Quantum Electron. 51(11), 1700708 (2015).
[Crossref]

2014 (1)

2013 (2)

H. J. Zhang, S. Z. Zhao, G. Q. Li, K. J. Yang, and D. C. Li, “single mode-locking pulse generation underneath the Q-switched envelope of the doubly QML green laser with EO and GaAs,” Opt. Laser Technol. 45, 118–124 (2013).
[Crossref]

H. Zhang, S. Zhao, K. Yang, G. Li, D. Li, J. Zhao, and Y. Wang, “Solid-state YVO4/Nd:YVO4/KTP green laser system for the generation of subnanosecond pulses with adjustable kilohertz repetition rate,” Appl. Opt. 52(27), 6776–6781 (2013).
[Crossref] [PubMed]

2012 (2)

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

D. Li, M. Yang, S. Zhao, Y. Cai, and Y. Feng, “First principles study of bismuth alloying effects in GaAs saturable absorber,” Opt. Express 20(10), 11574–11580 (2012).
[Crossref] [PubMed]

2010 (2)

T. Li, S. Zhao, Z. Zhuo, K. Yang, G. Li, and D. Li, “Dual-loss-modulated Q-switched and mode-locked YVO4/Nd:YVO4/KTP green laser with EO and Cr4+:YAG saturable absorber,” Opt. Express 18(10), 10315–10322 (2010).
[Crossref] [PubMed]

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

2008 (2)

C. Theobald, M. Weitz, R. Knappe, R. Wallenstein, and J. A. L’huillier, “Stable Q-switch mode-locking of Nd:YVO4 lasers with a semiconductor saturable absorber,” Appl. Phys. B 92(1), 1–3 (2008).
[Crossref]

J. H. Lin, K. H. Lin, H. H. Hsu, and W. F. Hsieh, “Q-switched and mode-locked pulses generation in Nd:GdVO4 laser with dual loss-modulation mechanism,” Laser Phys. Lett. 5(4), 276–280 (2008).
[Crossref]

2007 (2)

W. Tian, C. Wang, G. Wang, S. Liu, and J. Liu, “Performance of diode-pumped passively Q-switched mode-locking Nd:GdVO4/KTP green laser with Cr4+:YAG,” Laser Phys. Lett. 4(3), 196–199 (2007).
[Crossref]

M. Li, S. Zhao, K. Yang, G. Li, D. Li, J. Wang, J. An, and W. Qiao, “Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Appl. Phys. B 88(4), 531–537 (2007).
[Crossref]

2006 (1)

K. Yang, S. Zhao, G. Li, M. Li, D. Li, J. Wang, and J. An, “Diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4/KTP green laser with a GaAs wafer,” IEEE J. Quantum Electron. 42(7), 683–689 (2006).
[Crossref]

2004 (1)

2003 (2)

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

J. Y. Wang, Q. Zheng, Q. H. Xue, and H. M. Tan, “Diode-pumped Cr:YAG passively Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Chin. Opt. Lett. 1(10), 604–605 (2003).

2002 (1)

D. Weller, “Relating wideband DSO rise time to bandwidth: Lose the 0.35!” EDN 12, 89–94 (2002).

2000 (2)

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

L. Krainer, R. Paschotta, M. Moser, and U. Keller, “77 GHz soliton modelocked Nd:YVO4 laser,” Electron. Lett. 36(22), 1846–1848 (2000).
[Crossref]

1999 (1)

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

1998 (1)

1996 (1)

1983 (1)

P. M. Asbeck, D. L. Miller, E. J. Babcock, and C. G. Kirkpatrick, “Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett. 4(4), 81–84 (1983).
[Crossref]

Agnesi, A.

Alsous, M.

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

An, J.

M. Li, S. Zhao, K. Yang, G. Li, D. Li, J. Wang, J. An, and W. Qiao, “Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Appl. Phys. B 88(4), 531–537 (2007).
[Crossref]

K. Yang, S. Zhao, G. Li, M. Li, D. Li, J. Wang, and J. An, “Diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4/KTP green laser with a GaAs wafer,” IEEE J. Quantum Electron. 42(7), 683–689 (2006).
[Crossref]

Asbeck, P. M.

P. M. Asbeck, D. L. Miller, E. J. Babcock, and C. G. Kirkpatrick, “Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett. 4(4), 81–84 (1983).
[Crossref]

Aus der Au, J.

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

Babcock, E. J.

P. M. Asbeck, D. L. Miller, E. J. Babcock, and C. G. Kirkpatrick, “Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett. 4(4), 81–84 (1983).
[Crossref]

Bastiman, F.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Cai, Y.

Chen, Y. F.

Cheng, K.

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

Cong, W.

Das, S.

Datta, P.

David, J. P. R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Degiorgio, V.

Dhanjal, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Feng, Y.

Fluck, R.

Ge, H.

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

George, J.

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

Gupta, P.

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

Haring, R.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Hönninger, C.

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

Hoogland, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Hsieh, W. F.

J. H. Lin, K. H. Lin, H. H. Hsu, and W. F. Hsieh, “Q-switched and mode-locked pulses generation in Nd:GdVO4 laser with dual loss-modulation mechanism,” Laser Phys. Lett. 5(4), 276–280 (2008).
[Crossref]

Hsu, H. H.

J. H. Lin, K. H. Lin, H. H. Hsu, and W. F. Hsieh, “Q-switched and mode-locked pulses generation in Nd:GdVO4 laser with dual loss-modulation mechanism,” Laser Phys. Lett. 5(4), 276–280 (2008).
[Crossref]

Hunter, C. J.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Hwang, T. M.

Keller, U.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, “77 GHz soliton modelocked Nd:YVO4 laser,” Electron. Lett. 36(22), 1846–1848 (2000).
[Crossref]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

R. Fluck, K. J. Weingarten, M. Moser, G. Zhang, and U. Keller, “Diode-pumped passively mode-locked 1.3-µm Nd:YVO4 and Nd:YLF lasers by use of semiconductor saturable absorbers,” Opt. Lett. 21(17), 1378–1380 (1996).
[Crossref] [PubMed]

Kirkpatrick, C. G.

P. M. Asbeck, D. L. Miller, E. J. Babcock, and C. G. Kirkpatrick, “Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett. 4(4), 81–84 (1983).
[Crossref]

Knappe, R.

C. Theobald, M. Weitz, R. Knappe, R. Wallenstein, and J. A. L’huillier, “Stable Q-switch mode-locking of Nd:YVO4 lasers with a semiconductor saturable absorber,” Appl. Phys. B 92(1), 1–3 (2008).
[Crossref]

Kopf, D.

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

Krainer, L.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, “77 GHz soliton modelocked Nd:YVO4 laser,” Electron. Lett. 36(22), 1846–1848 (2000).
[Crossref]

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

L’huillier, J. A.

C. Theobald, M. Weitz, R. Knappe, R. Wallenstein, and J. A. L’huillier, “Stable Q-switch mode-locking of Nd:YVO4 lasers with a semiconductor saturable absorber,” Appl. Phys. B 92(1), 1–3 (2008).
[Crossref]

Li, D.

Li, D. C.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

H. J. Zhang, S. Z. Zhao, G. Q. Li, K. J. Yang, and D. C. Li, “single mode-locking pulse generation underneath the Q-switched envelope of the doubly QML green laser with EO and GaAs,” Opt. Laser Technol. 45, 118–124 (2013).
[Crossref]

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

Li, G.

H. Zhang, S. Zhao, K. Yang, G. Li, D. Li, J. Zhao, and Y. Wang, “Solid-state YVO4/Nd:YVO4/KTP green laser system for the generation of subnanosecond pulses with adjustable kilohertz repetition rate,” Appl. Opt. 52(27), 6776–6781 (2013).
[Crossref] [PubMed]

T. Li, S. Zhao, Z. Zhuo, K. Yang, G. Li, and D. Li, “Dual-loss-modulated Q-switched and mode-locked YVO4/Nd:YVO4/KTP green laser with EO and Cr4+:YAG saturable absorber,” Opt. Express 18(10), 10315–10322 (2010).
[Crossref] [PubMed]

M. Li, S. Zhao, K. Yang, G. Li, D. Li, J. Wang, J. An, and W. Qiao, “Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Appl. Phys. B 88(4), 531–537 (2007).
[Crossref]

K. Yang, S. Zhao, G. Li, M. Li, D. Li, J. Wang, and J. An, “Diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4/KTP green laser with a GaAs wafer,” IEEE J. Quantum Electron. 42(7), 683–689 (2006).
[Crossref]

Li, G. Q.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

S. X. Li, G. Q. Li, S. Z. Zhao, and X. M. Wang, “Theoretical and experimental study on high peak power sub-nanosecond pulse characteristics of multi-segment composite Nd:YVO4 laser,” IEEE J. Quantum Electron. 51(11), 1700708 (2015).
[Crossref]

H. J. Zhang, S. Z. Zhao, G. Q. Li, K. J. Yang, and D. C. Li, “single mode-locking pulse generation underneath the Q-switched envelope of the doubly QML green laser with EO and GaAs,” Opt. Laser Technol. 45, 118–124 (2013).
[Crossref]

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

Li, M.

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

M. Li, S. Zhao, K. Yang, G. Li, D. Li, J. Wang, J. An, and W. Qiao, “Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Appl. Phys. B 88(4), 531–537 (2007).
[Crossref]

K. Yang, S. Zhao, G. Li, M. Li, D. Li, J. Wang, and J. An, “Diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4/KTP green laser with a GaAs wafer,” IEEE J. Quantum Electron. 42(7), 683–689 (2006).
[Crossref]

Li, S. X.

S. X. Li, G. Q. Li, S. Z. Zhao, and X. M. Wang, “Theoretical and experimental study on high peak power sub-nanosecond pulse characteristics of multi-segment composite Nd:YVO4 laser,” IEEE J. Quantum Electron. 51(11), 1700708 (2015).
[Crossref]

Li, T.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

T. Li, S. Zhao, Z. Zhuo, K. Yang, G. Li, and D. Li, “Dual-loss-modulated Q-switched and mode-locked YVO4/Nd:YVO4/KTP green laser with EO and Cr4+:YAG saturable absorber,” Opt. Express 18(10), 10315–10322 (2010).
[Crossref] [PubMed]

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

Li, X.

Li, Y.

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

Lin, J. H.

J. H. Lin, K. H. Lin, H. H. Hsu, and W. F. Hsieh, “Q-switched and mode-locked pulses generation in Nd:GdVO4 laser with dual loss-modulation mechanism,” Laser Phys. Lett. 5(4), 276–280 (2008).
[Crossref]

Lin, K. H.

J. H. Lin, K. H. Lin, H. H. Hsu, and W. F. Hsieh, “Q-switched and mode-locked pulses generation in Nd:GdVO4 laser with dual loss-modulation mechanism,” Laser Phys. Lett. 5(4), 276–280 (2008).
[Crossref]

C. L. Wang, K. H. Lin, T. M. Hwang, Y. F. Chen, S. C. Wang, and C. L. Pan, “Mode-locked diode-pumped self-frequency-doubling neodymium yttrium aluminum borate Laser,” Appl. Opt. 37(15), 3282–3285 (1998).
[Crossref] [PubMed]

Liu, J.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

W. Tian, C. Wang, G. Wang, S. Liu, and J. Liu, “Performance of diode-pumped passively Q-switched mode-locking Nd:GdVO4/KTP green laser with Cr4+:YAG,” Laser Phys. Lett. 4(3), 196–199 (2007).
[Crossref]

Liu, S.

W. Tian, C. Wang, G. Wang, S. Liu, and J. Liu, “Performance of diode-pumped passively Q-switched mode-locking Nd:GdVO4/KTP green laser with Cr4+:YAG,” Laser Phys. Lett. 4(3), 196–199 (2007).
[Crossref]

Miller, D. L.

P. M. Asbeck, D. L. Miller, E. J. Babcock, and C. G. Kirkpatrick, “Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett. 4(4), 81–84 (1983).
[Crossref]

Mohmad, A. R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Morier-Genoud, F.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Moser, M.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, “77 GHz soliton modelocked Nd:YVO4 laser,” Electron. Lett. 36(22), 1846–1848 (2000).
[Crossref]

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

R. Fluck, K. J. Weingarten, M. Moser, G. Zhang, and U. Keller, “Diode-pumped passively mode-locked 1.3-µm Nd:YVO4 and Nd:YLF lasers by use of semiconductor saturable absorbers,” Opt. Lett. 21(17), 1378–1380 (1996).
[Crossref] [PubMed]

Mukhopadhyay, P.

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

Mukhopadhyay, S.

Nathan, T.

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

Ng, J. S.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Pan, C. L.

Paschotta, R.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, “77 GHz soliton modelocked Nd:YVO4 laser,” Electron. Lett. 36(22), 1846–1848 (2000).
[Crossref]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

Qiao, H.

Qiao, W.

M. Li, S. Zhao, K. Yang, G. Li, D. Li, J. Wang, J. An, and W. Qiao, “Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Appl. Phys. B 88(4), 531–537 (2007).
[Crossref]

Qiao, W. C.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

Ranganathan, K.

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

Richards, R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Roberts, J. S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Sharma, S.

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

Sweeney, S. J.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Tan, H. M.

Tartara, L.

Theobald, C.

C. Theobald, M. Weitz, R. Knappe, R. Wallenstein, and J. A. L’huillier, “Stable Q-switch mode-locking of Nd:YVO4 lasers with a semiconductor saturable absorber,” Appl. Phys. B 92(1), 1–3 (2008).
[Crossref]

Tian, W.

W. Tian, C. Wang, G. Wang, S. Liu, and J. Liu, “Performance of diode-pumped passively Q-switched mode-locking Nd:GdVO4/KTP green laser with Cr4+:YAG,” Laser Phys. Lett. 4(3), 196–199 (2007).
[Crossref]

Tropper, A. C.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Wallenstein, R.

C. Theobald, M. Weitz, R. Knappe, R. Wallenstein, and J. A. L’huillier, “Stable Q-switch mode-locking of Nd:YVO4 lasers with a semiconductor saturable absorber,” Appl. Phys. B 92(1), 1–3 (2008).
[Crossref]

Wang, C.

W. Tian, C. Wang, G. Wang, S. Liu, and J. Liu, “Performance of diode-pumped passively Q-switched mode-locking Nd:GdVO4/KTP green laser with Cr4+:YAG,” Laser Phys. Lett. 4(3), 196–199 (2007).
[Crossref]

Wang, C. L.

Wang, G.

W. Tian, C. Wang, G. Wang, S. Liu, and J. Liu, “Performance of diode-pumped passively Q-switched mode-locking Nd:GdVO4/KTP green laser with Cr4+:YAG,” Laser Phys. Lett. 4(3), 196–199 (2007).
[Crossref]

Wang, J.

M. Li, S. Zhao, K. Yang, G. Li, D. Li, J. Wang, J. An, and W. Qiao, “Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Appl. Phys. B 88(4), 531–537 (2007).
[Crossref]

K. Yang, S. Zhao, G. Li, M. Li, D. Li, J. Wang, and J. An, “Diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4/KTP green laser with a GaAs wafer,” IEEE J. Quantum Electron. 42(7), 683–689 (2006).
[Crossref]

Wang, J. Y.

Wang, S. C.

Wang, X. M.

S. X. Li, G. Q. Li, S. Z. Zhao, and X. M. Wang, “Theoretical and experimental study on high peak power sub-nanosecond pulse characteristics of multi-segment composite Nd:YVO4 laser,” IEEE J. Quantum Electron. 51(11), 1700708 (2015).
[Crossref]

Wang, Y.

Wang, Y. G.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

Weingarten, K. J.

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

R. Fluck, K. J. Weingarten, M. Moser, G. Zhang, and U. Keller, “Diode-pumped passively mode-locked 1.3-µm Nd:YVO4 and Nd:YLF lasers by use of semiconductor saturable absorbers,” Opt. Lett. 21(17), 1378–1380 (1996).
[Crossref] [PubMed]

Weitz, M.

C. Theobald, M. Weitz, R. Knappe, R. Wallenstein, and J. A. L’huillier, “Stable Q-switch mode-locking of Nd:YVO4 lasers with a semiconductor saturable absorber,” Appl. Phys. B 92(1), 1–3 (2008).
[Crossref]

Weller, D.

D. Weller, “Relating wideband DSO rise time to bandwidth: Lose the 0.35!” EDN 12, 89–94 (2002).

Xue, Q. H.

Yang, K.

Yang, K. J.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

H. J. Zhang, S. Z. Zhao, G. Q. Li, K. J. Yang, and D. C. Li, “single mode-locking pulse generation underneath the Q-switched envelope of the doubly QML green laser with EO and GaAs,” Opt. Laser Technol. 45, 118–124 (2013).
[Crossref]

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

Yang, M.

Zhang, G.

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

R. Fluck, K. J. Weingarten, M. Moser, G. Zhang, and U. Keller, “Diode-pumped passively mode-locked 1.3-µm Nd:YVO4 and Nd:YLF lasers by use of semiconductor saturable absorbers,” Opt. Lett. 21(17), 1378–1380 (1996).
[Crossref] [PubMed]

Zhang, H.

Zhang, H. J.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

H. J. Zhang, S. Z. Zhao, G. Q. Li, K. J. Yang, and D. C. Li, “single mode-locking pulse generation underneath the Q-switched envelope of the doubly QML green laser with EO and GaAs,” Opt. Laser Technol. 45, 118–124 (2013).
[Crossref]

Zhao, B.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

Zhao, J.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

H. Zhang, S. Zhao, K. Yang, G. Li, D. Li, J. Zhao, and Y. Wang, “Solid-state YVO4/Nd:YVO4/KTP green laser system for the generation of subnanosecond pulses with adjustable kilohertz repetition rate,” Appl. Opt. 52(27), 6776–6781 (2013).
[Crossref] [PubMed]

Zhao, S.

Zhao, S. Z.

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

S. X. Li, G. Q. Li, S. Z. Zhao, and X. M. Wang, “Theoretical and experimental study on high peak power sub-nanosecond pulse characteristics of multi-segment composite Nd:YVO4 laser,” IEEE J. Quantum Electron. 51(11), 1700708 (2015).
[Crossref]

H. J. Zhang, S. Z. Zhao, G. Q. Li, K. J. Yang, and D. C. Li, “single mode-locking pulse generation underneath the Q-switched envelope of the doubly QML green laser with EO and GaAs,” Opt. Laser Technol. 45, 118–124 (2013).
[Crossref]

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

Zheng, Q.

Zhuo, Z.

Appl. Opt. (2)

Appl. Phys. B (3)

M. Li, S. Zhao, K. Yang, G. Li, D. Li, J. Wang, J. An, and W. Qiao, “Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO4/KTP green laser,” Appl. Phys. B 88(4), 531–537 (2007).
[Crossref]

L. Krainer, R. Paschotta, J. Aus der Au, C. Hönninger, U. Keller, M. Moser, D. Kopf, and K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69(3), 245–247 (1999).
[Crossref]

C. Theobald, M. Weitz, R. Knappe, R. Wallenstein, and J. A. L’huillier, “Stable Q-switch mode-locking of Nd:YVO4 lasers with a semiconductor saturable absorber,” Appl. Phys. B 92(1), 1–3 (2008).
[Crossref]

Appl. Phys. Lett. (1)

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Chin. Opt. Lett. (1)

EDN (1)

D. Weller, “Relating wideband DSO rise time to bandwidth: Lose the 0.35!” EDN 12, 89–94 (2002).

Electron. Lett. (1)

L. Krainer, R. Paschotta, M. Moser, and U. Keller, “77 GHz soliton modelocked Nd:YVO4 laser,” Electron. Lett. 36(22), 1846–1848 (2000).
[Crossref]

IEEE Electron Device Lett. (1)

P. M. Asbeck, D. L. Miller, E. J. Babcock, and C. G. Kirkpatrick, “Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett. 4(4), 81–84 (1983).
[Crossref]

IEEE J. Quantum Electron. (2)

S. X. Li, G. Q. Li, S. Z. Zhao, and X. M. Wang, “Theoretical and experimental study on high peak power sub-nanosecond pulse characteristics of multi-segment composite Nd:YVO4 laser,” IEEE J. Quantum Electron. 51(11), 1700708 (2015).
[Crossref]

K. Yang, S. Zhao, G. Li, M. Li, D. Li, J. Wang, and J. An, “Diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4/KTP green laser with a GaAs wafer,” IEEE J. Quantum Electron. 42(7), 683–689 (2006).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

H. J. Zhang, J. Zhao, K. J. Yang, S. Z. Zhao, T. Li, G. Q. Li, D. C. Li, W. C. Qiao, Y. G. Wang, and B. Zhao, “Low repetition rate sub nanosecond pulse characteristics of Nd:Lu0.5Y0.5VO4/KTP green laser with EO and MWCNT,” IEEE J. Sel. Top. Quantum Electron. 21(1), 1100506 (2015).

IEEE Photonics Technol. Lett. (1)

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Laser Phys. Lett. (3)

J. H. Lin, K. H. Lin, H. H. Hsu, and W. F. Hsieh, “Q-switched and mode-locked pulses generation in Nd:GdVO4 laser with dual loss-modulation mechanism,” Laser Phys. Lett. 5(4), 276–280 (2008).
[Crossref]

S. Z. Zhao, G. Q. Li, D. C. Li, K. J. Yang, Y. Li, M. Li, T. Li, K. Cheng, G. Zhang, and H. Ge, “Dual-loss-modulated Q-switched and mode-locked Nd:GdVO4 laser with AO and Cr4+:YAG saturable absorber,” Laser Phys. Lett. 7(1), 29–33 (2010).
[Crossref]

W. Tian, C. Wang, G. Wang, S. Liu, and J. Liu, “Performance of diode-pumped passively Q-switched mode-locking Nd:GdVO4/KTP green laser with Cr4+:YAG,” Laser Phys. Lett. 4(3), 196–199 (2007).
[Crossref]

Opt. Commun. (1)

P. Mukhopadhyay, M. Alsous, K. Ranganathan, S. Sharma, P. Gupta, J. George, and T. Nathan, “Simultaneous Q-switching and mode-locking in an intra-cavity frequency doubled diode-pumped Nd:GdVO4/KTP with Cr4+:YAG,” Opt. Commun. 222(1–6), 399–404 (2003).
[Crossref]

Opt. Express (4)

Opt. Laser Technol. (1)

H. J. Zhang, S. Z. Zhao, G. Q. Li, K. J. Yang, and D. C. Li, “single mode-locking pulse generation underneath the Q-switched envelope of the doubly QML green laser with EO and GaAs,” Opt. Laser Technol. 45, 118–124 (2013).
[Crossref]

Opt. Lett. (1)

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Figures (5)

Fig. 1
Fig. 1 Experimental configuration for the composite Nd:YVO4/KTP green lasers. SA: GaAs or Bi-GaAs.
Fig. 2
Fig. 2 Pulse shapes of EOM and Bi-GaAs dual-loss-modulated green laser at different pump powers with 1 kHz repetition rate: (a) 4.35 W; (b) 6.08 W; (c) 7.77 W; (d) and (e) 11.13 W.
Fig. 3
Fig. 3 Average output power (a) and pulse duration (b) versus incident pump power.
Fig. 4
Fig. 4 Pulse shapes for different SAs: (a) EO + Bi-GaAs; (b) EO + GaAs.
Fig. 5
Fig. 5 Single pulse energy of two statuses versus incident pump power.

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