Abstract

The photoluminescence (PL) properties of silicon-on-insulator (SOI) samples, modified by the Si+ self-ion-implantation (SII) into Si thin film followed by annealing, have been well investigated. The well-known W-line can also be observed in SII SOI samples, its emitting behavior and structural evolution have been discussed in this article. The parallel PL pattern trend and the similar changes of temperature-dependent intensity suggest that luminescence center of I1 and I2 peaks located in the near-infrared band originates from the same interstitial-clusters (InCs). The PL peak at 1.762 eV can be ascribed to the quantum confinement (QC) from small-sized Si nanocrystals. Based on the electron spin resonance (ESR) experiments and the variation of normalized PL intensities at different annealing temperature (TA), the neutral oxygen vacancy (NOV) [O3≡Si-Si≡O3] is proposed to be responsible for the blue emission of P2 and P3 peaks, whose intensity can be restrained by the existence of the paramagnetic E1' defects [O3≡Si+]. The density of E1' defect is found to reduce with the increase of annealing temperature (TA). Our results provide a useful method to identify the origin of luminescence centers and pave a way for the application of new type optical defects on silicon based light emitting devices (LEDs).

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers

Hisashi Sumikura, Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, and Masaya Notomi
Opt. Express 19(25) 25255-25262 (2011)

Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals

Akhilesh K. Singh, Karol G. Gryczynski, and Arup Neogi
Opt. Mater. Express 2(5) 501-509 (2012)

ESR study of samarium doped fluorophosphate glasses for high-dose, high-resolution dosimetry

Shahrzad Vahedi, Go Okada, Cyril Koughia, Ramaswami Sammynaiken, Andy Edgar, and Safa Kasap
Opt. Mater. Express 4(6) 1244-1256 (2014)

References

  • View by:
  • |
  • |
  • |

  1. G. Davies, “The optical properties of luminescence centres in silicon,” Phys. Rep. 176(3-4), 83–188 (1989).
    [Crossref]
  2. D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical Properties of Si Nanocrystals,” Phys. Status Solidi 215(2), 871–932 (1999).
    [Crossref]
  3. C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
    [Crossref]
  4. P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
    [Crossref]
  5. Y. Yasutake, J. Igarashi, N. Tana-ami, and S. Fukatsu, “An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K,” Opt. Express 17(19), 16739–16744 (2009).
    [Crossref] [PubMed]
  6. P. K. Giri, “Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon,” Semicond. Sci. Technol. 20(6), 638–644 (2005).
    [Crossref]
  7. A. G. Hernández, A. E. Escobosa-Echavarría, and Y. Kudriavtsev, “White luminescence emission from silicon implanted germanium,” Appl. Surf. Sci. 428, 1098–1105 (2018).
    [Crossref]
  8. L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
    [Crossref]
  9. W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).
  10. B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
    [Crossref]
  11. Y. Yang, J. Bao, C. Wang, and M. J. Aziz, “Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing,” J. Appl. Phys. 107(12), 123109 (2010).
    [Crossref]
  12. J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15, 6727–6733 (2007).
  13. F. Wei, Y. Z. Li, G. Z. Ran, and G. G. Qin, “1.54 µm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)3phen as emitter and Bphen as electron transport material,” Opt. Express 18(13), 13542–13546 (2010).
    [Crossref] [PubMed]
  14. H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
    [Crossref]
  15. H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
    [Crossref]
  16. H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B 60(23), 15910–15918 (1999).
    [Crossref]
  17. H. Z. Song and X. M. Bao, “Visible photoluminescence from silicon-ion-implanted SiO2 film and its multiple mechanisms,” Phys. Rev. B 55(11), 6988–6993 (1997).
    [Crossref]
  18. G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
    [Crossref]
  19. T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
    [Crossref] [PubMed]
  20. C. Huh, T.-Y. Kim, C.-G. Ahn, and B. K. Kim, “Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film,” Appl. Phys. Lett. 106(21), 211103 (2015).
    [Crossref]
  21. N.-M. Park, T.-S. Kim, and S.-J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
    [Crossref]
  22. J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
    [Crossref] [PubMed]
  23. M. Suezawa, Y. Sasaki, and K. Sumino, “Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals,” Phys. Status Solidi 79(1), 173–181 (1983).
    [Crossref]
  24. M. Tajima and S. Ibuka, “Luminescence due to electron-hole condensation in silicon-on-insulator,” J. Appl. Phys. 84(4), 2224–2228 (1998).
    [Crossref]
  25. B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
    [Crossref]
  26. D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
    [Crossref] [PubMed]
  27. C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
    [Crossref]
  28. N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
    [Crossref]
  29. S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
    [Crossref]
  30. C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
    [Crossref]
  31. R. A. B. Devine, The Physics and Technology of Amorphous SiO2 (Springer, 1988).
  32. L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
    [Crossref]

2018 (2)

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

A. G. Hernández, A. E. Escobosa-Echavarría, and Y. Kudriavtsev, “White luminescence emission from silicon implanted germanium,” Appl. Surf. Sci. 428, 1098–1105 (2018).
[Crossref]

2017 (2)

L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
[Crossref]

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

2015 (2)

C. Huh, T.-Y. Kim, C.-G. Ahn, and B. K. Kim, “Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film,” Appl. Phys. Lett. 106(21), 211103 (2015).
[Crossref]

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

2011 (2)

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

2010 (2)

Y. Yang, J. Bao, C. Wang, and M. J. Aziz, “Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing,” J. Appl. Phys. 107(12), 123109 (2010).
[Crossref]

F. Wei, Y. Z. Li, G. Z. Ran, and G. G. Qin, “1.54 µm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)3phen as emitter and Bphen as electron transport material,” Opt. Express 18(13), 13542–13546 (2010).
[Crossref] [PubMed]

2009 (1)

2007 (1)

2005 (1)

P. K. Giri, “Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon,” Semicond. Sci. Technol. 20(6), 638–644 (2005).
[Crossref]

2004 (1)

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

2002 (2)

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[Crossref]

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

2001 (4)

B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
[Crossref]

N.-M. Park, T.-S. Kim, and S.-J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

1999 (5)

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
[Crossref]

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
[Crossref]

H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B 60(23), 15910–15918 (1999).
[Crossref]

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical Properties of Si Nanocrystals,” Phys. Status Solidi 215(2), 871–932 (1999).
[Crossref]

1998 (1)

M. Tajima and S. Ibuka, “Luminescence due to electron-hole condensation in silicon-on-insulator,” J. Appl. Phys. 84(4), 2224–2228 (1998).
[Crossref]

1997 (1)

H. Z. Song and X. M. Bao, “Visible photoluminescence from silicon-ion-implanted SiO2 film and its multiple mechanisms,” Phys. Rev. B 55(11), 6988–6993 (1997).
[Crossref]

1996 (1)

L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
[Crossref]

1995 (1)

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

1989 (1)

G. Davies, “The optical properties of luminescence centres in silicon,” Phys. Rep. 176(3-4), 83–188 (1989).
[Crossref]

1983 (1)

M. Suezawa, Y. Sasaki, and K. Sumino, “Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals,” Phys. Status Solidi 79(1), 173–181 (1983).
[Crossref]

Abbarchi, M.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Ahn, C.-G.

C. Huh, T.-Y. Kim, C.-G. Ahn, and B. K. Kim, “Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film,” Appl. Phys. Lett. 106(21), 211103 (2015).
[Crossref]

Altibelli, A.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Assayag, G. B.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Aziz, M. J.

Y. Yang, J. Bao, C. Wang, and M. J. Aziz, “Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing,” J. Appl. Phys. 107(12), 123109 (2010).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15, 6727–6733 (2007).

Bae, H. S.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

Bao, J.

Y. Yang, J. Bao, C. Wang, and M. J. Aziz, “Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing,” J. Appl. Phys. 107(12), 123109 (2010).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15, 6727–6733 (2007).

Bao, J.-M.

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

Bao, X. M.

H. Z. Song and X. M. Bao, “Visible photoluminescence from silicon-ion-implanted SiO2 film and its multiple mechanisms,” Phys. Rev. B 55(11), 6988–6993 (1997).
[Crossref]

L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
[Crossref]

Barr, S. A.

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

Beaufils, C.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Benali, A.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Benton, J. L.

S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
[Crossref]

Bonafos, C.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Briddon, P. R.

B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
[Crossref]

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
[Crossref]

Capasso, F.

Carrada, M.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Cassabois, G.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Charnvanichborikarn, S.

Chong, W.

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Chulapakorn, T.

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

Claverie, A.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Coffa, S.

S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
[Crossref]

Colombeau, B.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Coomer, B. J.

B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
[Crossref]

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
[Crossref]

Cowern, N. E. B.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Cristiano, F.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Davies, G.

G. Davies, “The optical properties of luminescence centres in silicon,” Phys. Rep. 176(3-4), 83–188 (1989).
[Crossref]

Dong, W.

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Doty, R. C.

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

Eaglesham, D. J.

S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
[Crossref]

Escobosa-Echavarría, A. E.

A. G. Hernández, A. E. Escobosa-Echavarría, and Y. Kudriavtsev, “White luminescence emission from silicon implanted germanium,” Appl. Surf. Sci. 428, 1098–1105 (2018).
[Crossref]

Fukatsu, S.

Garrido, B.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Giri, P. K.

P. K. Giri, “Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon,” Semicond. Sci. Technol. 20(6), 638–644 (2005).
[Crossref]

Gong, J.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[Crossref]

Goss, J. P.

B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
[Crossref]

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
[Crossref]

Guillois, O.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[Crossref]

Hallén, A.

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

Halliburton, K.

S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
[Crossref]

Hazzard, K. R. A.

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

He, P.

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

Heckler, H.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical Properties of Si Nanocrystals,” Phys. Status Solidi 215(2), 871–932 (1999).
[Crossref]

Hennig, R.

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

Hernández, A. G.

A. G. Hernández, A. E. Escobosa-Echavarría, and Y. Kudriavtsev, “White luminescence emission from silicon implanted germanium,” Appl. Surf. Sci. 428, 1098–1105 (2018).
[Crossref]

Herzig, T.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Holmes, J. D.

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

Huh, C.

C. Huh, T.-Y. Kim, C.-G. Ahn, and B. K. Kim, “Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film,” Appl. Phys. Lett. 106(21), 211103 (2015).
[Crossref]

Huisken, F.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[Crossref]

Huizing, H. G. A.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Ibuka, S.

M. Tajima and S. Ibuka, “Luminescence due to electron-hole condensation in silicon-on-insulator,” J. Appl. Phys. 84(4), 2224–2228 (1998).
[Crossref]

Ieki, A.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Igarashi, J.

Im, S.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

Ito, D.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Jacques, V.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Jaraíz, M.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

JiMing, B.

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Johnston, K. P.

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

Jones, R.

B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
[Crossref]

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
[Crossref]

Kim, B. K.

C. Huh, T.-Y. Kim, C.-G. Ahn, and B. K. Kim, “Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film,” Appl. Phys. Lett. 106(21), 211103 (2015).
[Crossref]

Kim, J.

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

Kim, T.

Kim, T. G.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

Kim, T.-S.

N.-M. Park, T.-S. Kim, and S.-J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

Kim, T.-Y.

C. Huh, T.-Y. Kim, C.-G. Ahn, and B. K. Kim, “Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film,” Appl. Phys. Lett. 106(21), 211103 (2015).
[Crossref]

Koch, F.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical Properties of Si Nanocrystals,” Phys. Status Solidi 215(2), 871–932 (1999).
[Crossref]

Korgel, B. A.

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

Kovalev, D.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical Properties of Si Nanocrystals,” Phys. Status Solidi 215(2), 871–932 (1999).
[Crossref]

Kudriavtsev, Y.

A. G. Hernández, A. E. Escobosa-Echavarría, and Y. Kudriavtsev, “White luminescence emission from silicon implanted germanium,” Appl. Surf. Sci. 428, 1098–1105 (2018).
[Crossref]

Kuznetsov, A. Y.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Ledoux, G.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[Crossref]

Li, C.

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

Li, L.

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

Li, N. S.

L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
[Crossref]

Li, Y. Z.

Liang, L.

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Liao, L. S.

L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
[Crossref]

Libertino, S.

S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
[Crossref]

Linnros, J.

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

Lopez, M.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Mannino, G.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Meijer, J.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Min, N. B.

L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
[Crossref]

Morante, J. R.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Nishikawa, H.

H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B 60(23), 15910–15918 (1999).
[Crossref]

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Oberg, S.

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
[Crossref]

Öberg, S.

B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
[Crossref]

Ohki, Y.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

OuYang, L.

L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
[Crossref]

Park, N.-M.

N.-M. Park, T.-S. Kim, and S.-J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

Park, S.-J.

N.-M. Park, T.-S. Kim, and S.-J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

Pell, L. E.

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

Perez-Rodriguez, A.

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Pezzagna, S.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Polisski, G.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical Properties of Si Nanocrystals,” Phys. Status Solidi 215(2), 871–932 (1999).
[Crossref]

Primetzhofer, D.

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

Qin, G. G.

Qiu, F.

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

Ran, G. Z.

Raynaud, C.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Redjem, W.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Reynaud, C.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[Crossref]

Richie, D. A.

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

Roozeboom, F.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Rousseau, E.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

RuiDong, Y.

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Sasaki, Y.

M. Suezawa, Y. Sasaki, and K. Sumino, “Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals,” Phys. Status Solidi 79(1), 173–181 (1983).
[Crossref]

Saveda Suvanam, S.

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

Song, H. Z.

H. Z. Song and X. M. Bao, “Visible photoluminescence from silicon-ion-implanted SiO2 film and its multiple mechanisms,” Phys. Rev. B 55(11), 6988–6993 (1997).
[Crossref]

Song, J. H.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

Stahlbush, R. E.

H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B 60(23), 15910–15918 (1999).
[Crossref]

Stathis, J. H.

H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B 60(23), 15910–15918 (1999).
[Crossref]

Stolk, P. A.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Suezawa, M.

M. Suezawa, Y. Sasaki, and K. Sumino, “Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals,” Phys. Status Solidi 79(1), 173–181 (1983).
[Crossref]

Sumino, K.

M. Suezawa, Y. Sasaki, and K. Sumino, “Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals,” Phys. Status Solidi 79(1), 173–181 (1983).
[Crossref]

Sychugov, I.

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

Tabbal, M.

Tajima, M.

M. Tajima and S. Ibuka, “Luminescence due to electron-hole condensation in silicon-on-insulator,” J. Appl. Phys. 84(4), 2224–2228 (1998).
[Crossref]

Takiyama, M.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Tana-ami, N.

van Berkum, J. G. M.

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

Voisin, C.

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

Wang, C.

L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
[Crossref]

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

Y. Yang, J. Bao, C. Wang, and M. J. Aziz, “Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing,” J. Appl. Phys. 107(12), 123109 (2010).
[Crossref]

Wang, R.

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

Watanabe, E.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Wei, F.

Whang, C. N.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

Wilkins, J. W.

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

Williams, J. S.

Xiong, F.

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

Yang, J.

L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
[Crossref]

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

Yang, R.-D.

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

Yang, Y.

L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
[Crossref]

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

Y. Yang, J. Bao, C. Wang, and M. J. Aziz, “Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing,” J. Appl. Phys. 107(12), 123109 (2010).
[Crossref]

Yasutake, Y.

YingXia, J.

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Yu, Y.

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Yun, J. S.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

Zheng, X. Q.

L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
[Crossref]

Zhou, M.

L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
[Crossref]

Ziegler, K. J.

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

Appl. Phys. Lett. (4)

C. Huh, T.-Y. Kim, C.-G. Ahn, and B. K. Kim, “Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film,” Appl. Phys. Lett. 106(21), 211103 (2015).
[Crossref]

N.-M. Park, T.-S. Kim, and S.-J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[Crossref]

L. S. Liao, X. M. Bao, X. Q. Zheng, N. S. Li, and N. B. Min, “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett. 68(6), 850–852 (1996).
[Crossref]

Appl. Surf. Sci. (1)

A. G. Hernández, A. E. Escobosa-Echavarría, and Y. Kudriavtsev, “White luminescence emission from silicon implanted germanium,” Appl. Surf. Sci. 428, 1098–1105 (2018).
[Crossref]

Chin. Phys. B (1)

C. Wang, Y. Yang, R.-D. Yang, L. Li, F. Xiong, and J.-M. Bao, “Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure,” Chin. Phys. B 20(2), 026802 (2011).
[Crossref]

J. Am. Chem. Soc. (1)

J. D. Holmes, K. J. Ziegler, R. C. Doty, L. E. Pell, K. P. Johnston, and B. A. Korgel, “Highly luminescent silicon nanocrystals with discrete optical transitions,” J. Am. Chem. Soc. 123(16), 3743–3748 (2001).
[Crossref] [PubMed]

J. Appl. Phys. (4)

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[Crossref]

M. Tajima and S. Ibuka, “Luminescence due to electron-hole condensation in silicon-on-insulator,” J. Appl. Phys. 84(4), 2224–2228 (1998).
[Crossref]

Y. Yang, J. Bao, C. Wang, and M. J. Aziz, “Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing,” J. Appl. Phys. 107(12), 123109 (2010).
[Crossref]

J. Phys. Condens. Matter (1)

B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the tetra-interstitial in silicon,” J. Phys. Condens. Matter 13(1), L1–L7 (2001).
[Crossref]

Micro & Nano Lett. (1)

L. OuYang, C. Wang, M. Zhou, J. Yang, and Y. Yang, “Light emitting from the self-interstitial clusters buried in the Si+ self-ion implanted Si films,” Micro & Nano Lett. 12(4), 205–208 (2017).
[Crossref]

Nanotechnology (1)

T. Chulapakorn, I. Sychugov, S. Saveda Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén, “Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2,” Nanotechnology 28(37), 375603 (2017).
[Crossref] [PubMed]

Nucl. Instrum. Methods Phys. Res. Section B (2)

S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res. Section B 148(1-4), 247–251 (1999).
[Crossref]

C. Bonafos, B. Colombeau, A. Altibelli, M. Carrada, G. B. Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, and A. Claverie, “Kinetic study of group IV nanoparticles ion beam synthesized in SiO2,” Nucl. Instrum. Methods Phys. Res. Section B 178(1-4), 17–24 (2001).
[Crossref]

Opt. Express (3)

Opt. Mater. (1)

P. He, C. Wang, C. Li, J. Yang, F. Qiu, R. Wang, and Y. Yang, “Optical properties of the low-energy Ge-implanted and annealed SiO2 films,” Opt. Mater. 46, 491–496 (2015).
[Crossref]

Phys. Rep. (1)

G. Davies, “The optical properties of luminescence centres in silicon,” Phys. Rep. 176(3-4), 83–188 (1989).
[Crossref]

Phys. Rev. B (3)

C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Y. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon,” Phys. Rev. B 97(3), 035303 (2018).
[Crossref]

H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B 60(23), 15910–15918 (1999).
[Crossref]

H. Z. Song and X. M. Bao, “Visible photoluminescence from silicon-ion-implanted SiO2 film and its multiple mechanisms,” Phys. Rev. B 55(11), 6988–6993 (1997).
[Crossref]

Phys. Rev. Lett. (2)

N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, “Energetics of Self-Interstitial Clusters in Si,” Phys. Rev. Lett. 82(22), 4460–4463 (1999).
[Crossref]

D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of small silicon self-interstitial defects,” Phys. Rev. Lett. 92(4), 045501 (2004).
[Crossref] [PubMed]

Phys. Status Solidi (2)

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical Properties of Si Nanocrystals,” Phys. Status Solidi 215(2), 871–932 (1999).
[Crossref]

M. Suezawa, Y. Sasaki, and K. Sumino, “Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals,” Phys. Status Solidi 79(1), 173–181 (1983).
[Crossref]

Physica B (1)

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, “Interstitial aggregates and a new model for the I-1/W optical centre in silicon,” Physica B 273, 505–508 (1999).
[Crossref]

Semicond. Sci. Technol. (1)

P. K. Giri, “Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon,” Semicond. Sci. Technol. 20(6), 638–644 (2005).
[Crossref]

Wuli Xuebao (1)

W. Chong, Y. Yu, Y. RuiDong, L. Liang, W. Dong, J. YingXia, and B. JiMing, “Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer,” Wuli Xuebao 60, 506–511 (2011).

Other (1)

R. A. B. Devine, The Physics and Technology of Amorphous SiO2 (Springer, 1988).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1 PL spectra of SOI samples with Si+ doses of 1.0 × 1015 cm−2 and annealed at 400 °C and 800 °C in N2 ambience for 30 min, the two curves above was recorded at 10 K. The empty circles are experimental values, solid lines are fitted values by Gaussian line-shape model. Inset shows the TR-dependent PL intensities [1000/TR vs. ln (Intes)] of D1 signatures and the maximal PL intensities at different TR had been normalized before plotting.
Fig. 2
Fig. 2 TR dependent PL intensities (1000/TR vs. ln (Intes)) of the I1-line, I2-line and W-line signatures of sample annealed at 400 °C. The maximal PL intensities at different TR had been normalized before plotting
Fig. 3
Fig. 3 (a) PL spectra of SII SOI samples recorded at room temperature with TA of 900 °C and the implantation doses of 1.0 × 1016 cm−2, 5.0 × 1016 cm−2, and 1.0 × 1017 cm−2 respectively and marked as P1, P2 and P3, the short dot lines are fitting value of each peaks, the empty circles are experimental values and solid lines are fitted values, Inset shows the normalized P1 peak intensity of 3 different implantation dose. (b) Normalized PL intensity of P2 and P3 at different TA.
Fig. 4
Fig. 4 ESR signals of the SOI samples. (a)-(g) samples implanted with a dose of 1 × 1017 cm−2 and annealed at 300, 400, 500, 600, 700, 800, and 900°C, respectively.

Metrics