Abstract

The ultrafast nonlinear optical properties of bulk TlGaS2 crystal, a semiconductor with a layered structure, are studied by combining intensity dependent transmission, time-resolved transient absorption, and optical Kerr effect coupled to optical heterodyne detection. TlGaS2 demonstrates obvious two-photon absorption and electronic nonlinearities at 800 nm. The two-photon absorption coefficient and the nonlinear refractive index are determined to be of the order of 10−10 cm/W and 10−14 cm2/W, respectively. Furthermore, both the real and imaginary parts of the complex third-order susceptibility tensor elements are extracted. The large ultrafast optical nonlinearities make TlGaS2 a promising material for application in photonic techniques.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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Corrections

19 December 2018: A correction was made to the funding section.


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2018 (2)

A. Autere, H. Jussila, Y. Dai, Y. Wang, H. Lipsanen, and Z. Sun, “Nonlinear optics with 2D layered materials,” Adv. Mater. 30(24), e1705963 (2018).
[Crossref] [PubMed]

F. Liu, X. Zhao, X.-Q. Yan, X. Xin, Z.-B. Liu, and J.-G. Tian, “Measuring third-order susceptibility tensor elements of monolayer MoS2 using the optical Kerr effect method,” Appl. Phys. Lett. 113(5), 051901 (2018).
[Crossref]

2017 (1)

E. Dremetsika and P. Kockaert, “Enhanced optical Kerr effect method for a detailed characterization of the third-order nonlinearity of two-dimensional materials applied to graphene,” Phys. Rev. B 96(23), 235422 (2017).
[Crossref]

2016 (6)

2015 (4)

2014 (2)

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

T. Kawabata, Y. Shim, K. Wakita, and N. Mamedov, “Dielectric function spectra and inter-band optical transitions in TlGaS2,” Thin Solid Films 571(3), 589–592 (2014).
[Crossref]

2013 (1)

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

2012 (1)

2011 (2)

A. A. Al Ghamdi, A. T. Nagat, F. S. Bahabri, R. H. Al Orainy, and S. E. Al Garni, “Study of the switching phenomena of TlGaS2 single crystals,” Appl. Surf. Sci. 257(8), 3205–3210 (2011).
[Crossref]

N. M. Gasanly, “Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals,” J. Optoelectron. Adv. Mater. 13(1), 49–52 (2011).

2010 (1)

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

2009 (1)

M. Acikgoz and F. A. Mikailzade, “Thermal and EPR investigations of thallium gallium disulphide single crystal,” Cryst. Res. Technol. 44(7), 763–768 (2009).
[Crossref]

2006 (1)

F. A. Mikailov, S. Kazan, B. Z. Rameev, A. M. Kulibekov, E. Kerimova, and B. Aktaş, “Twinned EPR spectra of Fe3+ centers in ternary layered TlGaS2 crystal,” Solid State Commun. 138(5), 239–241 (2006).
[Crossref]

2005 (3)

Q. Liu, X. Zhao, F. Gan, J. Mi, and S. Qian, “Femtosecond optical Kerr effect study of Ge10As40S30Se20 film,” Solid State Commun. 134(8), 513–517 (2005).
[Crossref]

S. Duman and B. Gürbulak, “Urbach tail and optical absorption in layered semiconductor TlGaSe 2(1- x) S 2 x single crystals,” Phys. Scr. 72(1), 79–86 (2005).
[Crossref]

A. F. Qasrawi and N. M. Gasanly, “Optoelectronic and electrical properties of TlGaS2 single crystal,” Phys. Status Solidi 202(13), 2501–2507 (2005).
[Crossref]

2004 (1)

I. M. Ashraf, “Photophysical properties of TlGaS2 layered single crystals,” J. Phys. Chem. B 108(30), 10765–10769 (2004).
[Crossref]

2003 (1)

A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
[Crossref]

1998 (1)

N. M. Gasanly, A. Aydinli, A. Bek, and I. Yilmaz, “Low-temperature photoluminescence spectra of layered semiconductor TlGaS2,” Solid State Commun. 105(1), 21–24 (1998).
[Crossref]

1996 (1)

N. Kalkan, J. A. Kalomiros, M. Hanias, and A. N. Anagnostopoulos, “Optical and photoelectrical properties of the TlGaS2 ternary compound,” Solid State Commun. 99(6), 375–379 (1996).
[Crossref]

1994 (2)

T. D. Krauss and F. W. Wise, “Femtosecond measurement of nonlinear absorption and refraction in CdS, ZnSe, and ZnS,” Appl. Phys. Lett. 65(14), 1739–1741 (1994).
[Crossref]

M. D. Dvorak, W. A. Schroeder, D. R. Andersen, A. L. Smirl, and B. S. Wherrett, “Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors,” IEEE J. Quantum Electron. 30(2), 256–268 (1994).
[Crossref]

1992 (2)

M. P. Hanias, A. N. Anagnostopoulos, K. Kambas, and J. Spyridelis, “Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystals,” Mater. Res. Bull. 27(1), 25–38 (1992).
[Crossref]

M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia-Cotisel, and P. N. Prasad, “Optical heterodyning of the phase-tuned femtosecond optical Kerr gate signal for the determination of complex third-order susceptibilities,” Appl. Phys. Lett. 60(23), 2837–2839 (1992).
[Crossref]

Abdullayeva, S.

A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
[Crossref]

Acikgoz, M.

M. Acikgoz and F. A. Mikailzade, “Thermal and EPR investigations of thallium gallium disulphide single crystal,” Cryst. Res. Technol. 44(7), 763–768 (2009).
[Crossref]

Akinwande, D.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Aktas, B.

F. A. Mikailov, S. Kazan, B. Z. Rameev, A. M. Kulibekov, E. Kerimova, and B. Aktaş, “Twinned EPR spectra of Fe3+ centers in ternary layered TlGaS2 crystal,” Solid State Commun. 138(5), 239–241 (2006).
[Crossref]

Al Garni, S. E.

A. A. Al Ghamdi, A. T. Nagat, F. S. Bahabri, R. H. Al Orainy, and S. E. Al Garni, “Study of the switching phenomena of TlGaS2 single crystals,” Appl. Surf. Sci. 257(8), 3205–3210 (2011).
[Crossref]

Al Ghamdi, A. A.

A. A. Al Ghamdi, A. T. Nagat, F. S. Bahabri, R. H. Al Orainy, and S. E. Al Garni, “Study of the switching phenomena of TlGaS2 single crystals,” Appl. Surf. Sci. 257(8), 3205–3210 (2011).
[Crossref]

Al Orainy, R. H.

A. A. Al Ghamdi, A. T. Nagat, F. S. Bahabri, R. H. Al Orainy, and S. E. Al Garni, “Study of the switching phenomena of TlGaS2 single crystals,” Appl. Surf. Sci. 257(8), 3205–3210 (2011).
[Crossref]

Alem, N.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Anagnostopoulos, A. N.

N. Kalkan, J. A. Kalomiros, M. Hanias, and A. N. Anagnostopoulos, “Optical and photoelectrical properties of the TlGaS2 ternary compound,” Solid State Commun. 99(6), 375–379 (1996).
[Crossref]

M. P. Hanias, A. N. Anagnostopoulos, K. Kambas, and J. Spyridelis, “Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystals,” Mater. Res. Bull. 27(1), 25–38 (1992).
[Crossref]

Andersen, D. R.

M. D. Dvorak, W. A. Schroeder, D. R. Andersen, A. L. Smirl, and B. S. Wherrett, “Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors,” IEEE J. Quantum Electron. 30(2), 256–268 (1994).
[Crossref]

Anghel, S.

Ashraf, I. M.

I. M. Ashraf, “Photophysical properties of TlGaS2 layered single crystals,” J. Phys. Chem. B 108(30), 10765–10769 (2004).
[Crossref]

Autere, A.

A. Autere, H. Jussila, Y. Dai, Y. Wang, H. Lipsanen, and Z. Sun, “Nonlinear optics with 2D layered materials,” Adv. Mater. 30(24), e1705963 (2018).
[Crossref] [PubMed]

Aydinli, A.

N. M. Gasanly, A. Aydinli, A. Bek, and I. Yilmaz, “Low-temperature photoluminescence spectra of layered semiconductor TlGaS2,” Solid State Commun. 105(1), 21–24 (1998).
[Crossref]

Bahabri, F. S.

A. A. Al Ghamdi, A. T. Nagat, F. S. Bahabri, R. H. Al Orainy, and S. E. Al Garni, “Study of the switching phenomena of TlGaS2 single crystals,” Appl. Surf. Sci. 257(8), 3205–3210 (2011).
[Crossref]

Bao, Q.

Basko, D. M.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

Bek, A.

N. M. Gasanly, A. Aydinli, A. Bek, and I. Yilmaz, “Low-temperature photoluminescence spectra of layered semiconductor TlGaS2,” Solid State Commun. 105(1), 21–24 (1998).
[Crossref]

Berkdemir, A.

C. Torres-Torres, N. Perea-López, A. L. Elías, H. R. Gutiérrez, D. A. Cullen, A. Berkdemir, F. López-Urías, H. Terrones, and M. Terrones, “Third order nonlinear optical response exhibited by mono- and few-layers of WS2,” 2D Mater. 3(2), 021005 (2016).

Bhimanapati, G. R.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Bikorimana, S.

Blau, W. J.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Bonaccorso, F.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

Cha, J.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Chang, C.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

Chen, R.

Chen, W.

Chen, Z.

Cheng, X.

Ciret, C.

Coleman, J. N.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Cooper, V. R.

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Hanias, M.

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Jiang, T.

Jung, Y.

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Jussila, H.

A. Autere, H. Jussila, Y. Dai, Y. Wang, H. Lipsanen, and Z. Sun, “Nonlinear optics with 2D layered materials,” Adv. Mater. 30(24), e1705963 (2018).
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Kambas, K.

M. P. Hanias, A. N. Anagnostopoulos, K. Kambas, and J. Spyridelis, “Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystals,” Mater. Res. Bull. 27(1), 25–38 (1992).
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Kerimova, E.

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A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
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Lama, P.

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A. Autere, H. Jussila, Y. Dai, Y. Wang, H. Lipsanen, and Z. Sun, “Nonlinear optics with 2D layered materials,” Adv. Mater. 30(24), e1705963 (2018).
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K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
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Lv, B.

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T. Kawabata, Y. Shim, K. Wakita, and N. Mamedov, “Dielectric function spectra and inter-band optical transitions in TlGaS2,” Thin Solid Films 571(3), 589–592 (2014).
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A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
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Mi, J.

Q. Liu, X. Zhao, F. Gan, J. Mi, and S. Qian, “Femtosecond optical Kerr effect study of Ge10As40S30Se20 film,” Solid State Commun. 134(8), 513–517 (2005).
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Micu, A.

Mikailov, F. A.

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Nishigaki, M.

A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
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O’Neill, A.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
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M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia-Cotisel, and P. N. Prasad, “Optical heterodyning of the phase-tuned femtosecond optical Kerr gate signal for the determination of complex third-order susceptibilities,” Appl. Phys. Lett. 60(23), 2837–2839 (1992).
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Perea-López, N.

C. Torres-Torres, N. Perea-López, A. L. Elías, H. R. Gutiérrez, D. A. Cullen, A. Berkdemir, F. López-Urías, H. Terrones, and M. Terrones, “Third order nonlinear optical response exhibited by mono- and few-layers of WS2,” 2D Mater. 3(2), 021005 (2016).

Ping, L. K.

Popa, D.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

Prasad, P. N.

M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia-Cotisel, and P. N. Prasad, “Optical heterodyning of the phase-tuned femtosecond optical Kerr gate signal for the determination of complex third-order susceptibilities,” Appl. Phys. Lett. 60(23), 2837–2839 (1992).
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Privitera, G.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

Qasrawi, A. F.

A. F. Qasrawi and N. M. Gasanly, “Optoelectronic and electrical properties of TlGaS2 single crystal,” Phys. Status Solidi 202(13), 2501–2507 (2005).
[Crossref]

Qi, X.

Qian, S.

Q. Liu, X. Zhao, F. Gan, J. Mi, and S. Qian, “Femtosecond optical Kerr effect study of Ge10As40S30Se20 film,” Solid State Commun. 134(8), 513–517 (2005).
[Crossref]

Qiu, J.

Rameev, B. Z.

F. A. Mikailov, S. Kazan, B. Z. Rameev, A. M. Kulibekov, E. Kerimova, and B. Aktaş, “Twinned EPR spectra of Fe3+ centers in ternary layered TlGaS2 crystal,” Solid State Commun. 138(5), 239–241 (2006).
[Crossref]

Ringe, E.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
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Robinson, J. A.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
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Samoc, M.

M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia-Cotisel, and P. N. Prasad, “Optical heterodyning of the phase-tuned femtosecond optical Kerr gate signal for the determination of complex third-order susceptibilities,” Appl. Phys. Lett. 60(23), 2837–2839 (1992).
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Schaak, R. E.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
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Schroeder, W. A.

M. D. Dvorak, W. A. Schroeder, D. R. Andersen, A. L. Smirl, and B. S. Wherrett, “Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors,” IEEE J. Quantum Electron. 30(2), 256–268 (1994).
[Crossref]

Schuller, J. A.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Seneor, P.

Shim, Y.

T. Kawabata, Y. Shim, K. Wakita, and N. Mamedov, “Dielectric function spectra and inter-band optical transitions in TlGaS2,” Thin Solid Films 571(3), 589–592 (2014).
[Crossref]

Smirl, A. L.

M. D. Dvorak, W. A. Schroeder, D. R. Andersen, A. L. Smirl, and B. S. Wherrett, “Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors,” IEEE J. Quantum Electron. 30(2), 256–268 (1994).
[Crossref]

Son, Y.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Spyridelis, J.

M. P. Hanias, A. N. Anagnostopoulos, K. Kambas, and J. Spyridelis, “Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystals,” Mater. Res. Bull. 27(1), 25–38 (1992).
[Crossref]

Strano, M. S.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Sumpter, B. G.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Sun, Z.

A. Autere, H. Jussila, Y. Dai, Y. Wang, H. Lipsanen, and Z. Sun, “Nonlinear optics with 2D layered materials,” Adv. Mater. 30(24), e1705963 (2018).
[Crossref] [PubMed]

Z. Sun, A. Martinez, and F. Wang, “Optical modulators with 2D layered materials,” Nat. Photonics 10(4), 227–238 (2016).
[Crossref]

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

Swiatkiewicz, J.

M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia-Cotisel, and P. N. Prasad, “Optical heterodyning of the phase-tuned femtosecond optical Kerr gate signal for the determination of complex third-order susceptibilities,” Appl. Phys. Lett. 60(23), 2837–2839 (1992).
[Crossref]

Tang, D. Y.

Terrones, H.

C. Torres-Torres, N. Perea-López, A. L. Elías, H. R. Gutiérrez, D. A. Cullen, A. Berkdemir, F. López-Urías, H. Terrones, and M. Terrones, “Third order nonlinear optical response exhibited by mono- and few-layers of WS2,” 2D Mater. 3(2), 021005 (2016).

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Terrones, M.

C. Torres-Torres, N. Perea-López, A. L. Elías, H. R. Gutiérrez, D. A. Cullen, A. Berkdemir, F. López-Urías, H. Terrones, and M. Terrones, “Third order nonlinear optical response exhibited by mono- and few-layers of WS2,” 2D Mater. 3(2), 021005 (2016).

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Tian, J.-G.

F. Liu, X. Zhao, X.-Q. Yan, X. Xin, Z.-B. Liu, and J.-G. Tian, “Measuring third-order susceptibility tensor elements of monolayer MoS2 using the optical Kerr effect method,” Appl. Phys. Lett. 113(5), 051901 (2018).
[Crossref]

Tian, X.

Tomoaia-Cotisel, M.

M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia-Cotisel, and P. N. Prasad, “Optical heterodyning of the phase-tuned femtosecond optical Kerr gate signal for the determination of complex third-order susceptibilities,” Appl. Phys. Lett. 60(23), 2837–2839 (1992).
[Crossref]

Torres-Torres, C.

C. Torres-Torres, N. Perea-López, A. L. Elías, H. R. Gutiérrez, D. A. Cullen, A. Berkdemir, F. López-Urías, H. Terrones, and M. Terrones, “Third order nonlinear optical response exhibited by mono- and few-layers of WS2,” 2D Mater. 3(2), 021005 (2016).

Torrisi, F.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

Uchiki, H.

A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
[Crossref]

Virally, S.

Wakita, K.

T. Kawabata, Y. Shim, K. Wakita, and N. Mamedov, “Dielectric function spectra and inter-band optical transitions in TlGaS2,” Thin Solid Films 571(3), 589–592 (2014).
[Crossref]

Walser, A.

Wang, C.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

Wang, F.

Z. Sun, A. Martinez, and F. Wang, “Optical modulators with 2D layered materials,” Nat. Photonics 10(4), 227–238 (2016).
[Crossref]

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

Wang, J.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Wang, K.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Wang, Y.

A. Autere, H. Jussila, Y. Dai, Y. Wang, H. Lipsanen, and Z. Sun, “Nonlinear optics with 2D layered materials,” Adv. Mater. 30(24), e1705963 (2018).
[Crossref] [PubMed]

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Wei, R.

Wen, S. C.

Wherrett, B. S.

M. D. Dvorak, W. A. Schroeder, D. R. Andersen, A. L. Smirl, and B. S. Wherrett, “Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors,” IEEE J. Quantum Electron. 30(2), 256–268 (1994).
[Crossref]

Wise, F. W.

T. D. Krauss and F. W. Wise, “Femtosecond measurement of nonlinear absorption and refraction in CdS, ZnSe, and ZnS,” Appl. Phys. Lett. 65(14), 1739–1741 (1994).
[Crossref]

Xia, F.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Xiao, D.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Xiao, Q.

Xiao, S.

Xin, X.

F. Liu, X. Zhao, X.-Q. Yan, X. Xin, Z.-B. Liu, and J.-G. Tian, “Measuring third-order susceptibility tensor elements of monolayer MoS2 using the optical Kerr effect method,” Appl. Phys. Lett. 113(5), 051901 (2018).
[Crossref]

Xu, Z.

Yamazaki, M.

A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
[Crossref]

Yan, X.-Q.

F. Liu, X. Zhao, X.-Q. Yan, X. Xin, Z.-B. Liu, and J.-G. Tian, “Measuring third-order susceptibility tensor elements of monolayer MoS2 using the optical Kerr effect method,” Appl. Phys. Lett. 113(5), 051901 (2018).
[Crossref]

Yilmaz, I.

N. M. Gasanly, A. Aydinli, A. Bek, and I. Yilmaz, “Low-temperature photoluminescence spectra of layered semiconductor TlGaS2,” Solid State Commun. 105(1), 21–24 (1998).
[Crossref]

Yu, X.

Zhan, J.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

Zhang, H.

Zhang, J.

Zhang, K.

Zhang, L.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Zhang, X.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Zhang, Y.

Zhao, C. J.

Zhao, Q.

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Zhao, X.

F. Liu, X. Zhao, X.-Q. Yan, X. Xin, Z.-B. Liu, and J.-G. Tian, “Measuring third-order susceptibility tensor elements of monolayer MoS2 using the optical Kerr effect method,” Appl. Phys. Lett. 113(5), 051901 (2018).
[Crossref]

Q. Liu, X. Zhao, F. Gan, J. Mi, and S. Qian, “Femtosecond optical Kerr effect study of Ge10As40S30Se20 film,” Solid State Commun. 134(8), 513–517 (2005).
[Crossref]

Zheng, X.

Zhou, F.

Zhou, W.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Zhu, J.

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

2D Mater. (1)

C. Torres-Torres, N. Perea-López, A. L. Elías, H. R. Gutiérrez, D. A. Cullen, A. Berkdemir, F. López-Urías, H. Terrones, and M. Terrones, “Third order nonlinear optical response exhibited by mono- and few-layers of WS2,” 2D Mater. 3(2), 021005 (2016).

ACS Nano (3)

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4(2), 803–810 (2010).
[Crossref] [PubMed]

G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones, and J. A. Robinson, “Recent advances in two-dimensional materials beyond graphene,” ACS Nano 9(12), 11509–11539 (2015).
[Crossref] [PubMed]

Adv. Mater. (1)

A. Autere, H. Jussila, Y. Dai, Y. Wang, H. Lipsanen, and Z. Sun, “Nonlinear optics with 2D layered materials,” Adv. Mater. 30(24), e1705963 (2018).
[Crossref] [PubMed]

Appl. Phys. Lett. (3)

F. Liu, X. Zhao, X.-Q. Yan, X. Xin, Z.-B. Liu, and J.-G. Tian, “Measuring third-order susceptibility tensor elements of monolayer MoS2 using the optical Kerr effect method,” Appl. Phys. Lett. 113(5), 051901 (2018).
[Crossref]

T. D. Krauss and F. W. Wise, “Femtosecond measurement of nonlinear absorption and refraction in CdS, ZnSe, and ZnS,” Appl. Phys. Lett. 65(14), 1739–1741 (1994).
[Crossref]

M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia-Cotisel, and P. N. Prasad, “Optical heterodyning of the phase-tuned femtosecond optical Kerr gate signal for the determination of complex third-order susceptibilities,” Appl. Phys. Lett. 60(23), 2837–2839 (1992).
[Crossref]

Appl. Surf. Sci. (1)

A. A. Al Ghamdi, A. T. Nagat, F. S. Bahabri, R. H. Al Orainy, and S. E. Al Garni, “Study of the switching phenomena of TlGaS2 single crystals,” Appl. Surf. Sci. 257(8), 3205–3210 (2011).
[Crossref]

Cryst. Res. Technol. (1)

M. Acikgoz and F. A. Mikailzade, “Thermal and EPR investigations of thallium gallium disulphide single crystal,” Cryst. Res. Technol. 44(7), 763–768 (2009).
[Crossref]

IEEE J. Quantum Electron. (1)

M. D. Dvorak, W. A. Schroeder, D. R. Andersen, A. L. Smirl, and B. S. Wherrett, “Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors,” IEEE J. Quantum Electron. 30(2), 256–268 (1994).
[Crossref]

J. Optoelectron. Adv. Mater. (1)

N. M. Gasanly, “Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals,” J. Optoelectron. Adv. Mater. 13(1), 49–52 (2011).

J. Phys. Chem. B (1)

I. M. Ashraf, “Photophysical properties of TlGaS2 layered single crystals,” J. Phys. Chem. B 108(30), 10765–10769 (2004).
[Crossref]

J. Phys. Chem. Solids (1)

A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullayeva, E. Kerimova, H. Uchiki, and S. Iida, “Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2,” J. Phys. Chem. Solids 64(9), 1713–1716 (2003).
[Crossref]

Mater. Res. Bull. (1)

M. P. Hanias, A. N. Anagnostopoulos, K. Kambas, and J. Spyridelis, “Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystals,” Mater. Res. Bull. 27(1), 25–38 (1992).
[Crossref]

Nanoscale (1)

K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale 6(18), 10530–10535 (2014).
[Crossref] [PubMed]

Nat. Photonics (1)

Z. Sun, A. Martinez, and F. Wang, “Optical modulators with 2D layered materials,” Nat. Photonics 10(4), 227–238 (2016).
[Crossref]

Opt. Express (3)

Opt. Lett. (4)

Opt. Mater. Express (1)

Phys. Rev. B (1)

E. Dremetsika and P. Kockaert, “Enhanced optical Kerr effect method for a detailed characterization of the third-order nonlinearity of two-dimensional materials applied to graphene,” Phys. Rev. B 96(23), 235422 (2017).
[Crossref]

Phys. Scr. (1)

S. Duman and B. Gürbulak, “Urbach tail and optical absorption in layered semiconductor TlGaSe 2(1- x) S 2 x single crystals,” Phys. Scr. 72(1), 79–86 (2005).
[Crossref]

Phys. Status Solidi (1)

A. F. Qasrawi and N. M. Gasanly, “Optoelectronic and electrical properties of TlGaS2 single crystal,” Phys. Status Solidi 202(13), 2501–2507 (2005).
[Crossref]

Solid State Commun. (4)

N. M. Gasanly, A. Aydinli, A. Bek, and I. Yilmaz, “Low-temperature photoluminescence spectra of layered semiconductor TlGaS2,” Solid State Commun. 105(1), 21–24 (1998).
[Crossref]

N. Kalkan, J. A. Kalomiros, M. Hanias, and A. N. Anagnostopoulos, “Optical and photoelectrical properties of the TlGaS2 ternary compound,” Solid State Commun. 99(6), 375–379 (1996).
[Crossref]

F. A. Mikailov, S. Kazan, B. Z. Rameev, A. M. Kulibekov, E. Kerimova, and B. Aktaş, “Twinned EPR spectra of Fe3+ centers in ternary layered TlGaS2 crystal,” Solid State Commun. 138(5), 239–241 (2006).
[Crossref]

Q. Liu, X. Zhao, F. Gan, J. Mi, and S. Qian, “Femtosecond optical Kerr effect study of Ge10As40S30Se20 film,” Solid State Commun. 134(8), 513–517 (2005).
[Crossref]

Thin Solid Films (1)

T. Kawabata, Y. Shim, K. Wakita, and N. Mamedov, “Dielectric function spectra and inter-band optical transitions in TlGaS2,” Thin Solid Films 571(3), 589–592 (2014).
[Crossref]

Other (3)

R. W. Boyd, Nonlinear optics, 3rd edition (Elsevier Inc, 2008).

http://www.2dsemiconductors.com/tlgas2/ .

R. L. Sutherland, Handbook of nonlinear optics (CRC, 2003).

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Figures (7)

Fig. 1
Fig. 1 (a) The crystal structure of TlGaS2, a = b = 10.40 Ǻ, c = 15.17 Ǻ, γ(c/a) = 100°. (b) The optical microscopic image of the surface of bulk TlGaS2 after mechanical exfoliation treatment, the flat area was limited to be ∼1 × 0.4 mm2. (c) The schematic diagram of the prepared TlGaS2 sample: the accylic sheet is in blue, the TlGaS2 crystal is in yellow, the white circle represents the pinhole; the red arrow indicates the incident direction of the pulses. (d) The photograph of the prepared TlGaS2 sample: the point where the four lines mark is the position irradiated by laser pulses. (e) Schematic diagram of TPA in TlGaS2.
Fig. 2
Fig. 2 (a) Raman spectrum of TlGaS2 taken using 514 nm excitation wavelength. (b) Optical absorption spectrum of TlGaS2. (c) Dependence of transmittance on the linear polarization orientation of the incident pulses.
Fig. 3
Fig. 3 Experimental setup for (a) IDT, (b) time-resolved TA (with the reference beam) and OHD-OKE (without the reference beam). L1, L2, L3, L4, L5, L6 and L7 are lenses; GT1, GT2, and GT3 are Glan-Taylor prisms; BS1, BS2 and BS3 are beam splitters; D1, D2, D3 and D4 are photodetectors. The probe beam was normally incident into the sample and the linearly polarized pump beam was incident into sample at an angle of ∼30° with respect to the probe beam. A pinhole was placed after the sample to filter the scattered pump light. The polarization states of the pump and probe beams are depicted in the inset (b1) for the OHD-OKE.
Fig. 4
Fig. 4 (a) OA Z-scan trace of ZnSe. The dependence of transmittance on the energy of incident pulses for (b) ZnSe and (c) TlGaS2.
Fig. 5
Fig. 5 Time-resolved ΔT/T of TlGaS2, the ΔT/T data shows symmetric temporal profile. Insets: (a) linear dependence of the maximum ΔT on the pump fluence; (b) Sinusoidal dependence of maximum ΔT on the pump polarization respected to the probe polarization. The circles are experimental data and the solid lines show theoretical fit.
Fig. 6
Fig. 6 Time-resolved OHD-OKE signal of CS2, the pump fluence is 2.1 mJ/cm2. Inset: the dependence of peak signal at 0 delay time on the θ. The asymmetry in the curves of θ = ± 4° is caused by the extra contribution of the homodyne detection signal [2], which arises from the NLR of CS2.
Fig. 7
Fig. 7 Time-resolved OHD-OKE results of TlGaS2: for measuring (a) the real part and (b) the imaginary part of the susceptibility. The pump fluence is ∼0.11 mJ/cm2. Insets: the dependence of peak signal on the heterodyne angle (a1, b1) and pump fluence (a2, b2, θ = 4°).

Tables (1)

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Table 1 In-plane NLO parameters of TlGaS2 at 800 nm.

Equations (3)

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Im( χ x x x x ( 3 ) ) ( esu ) = [ n 0 Re ( n 0 ) c 12 π 2 10 7 ] ( λ β 4 π ) = [ n 0 Re ( n 0 ) λ 0.158 π ] β lin ( cm W )
Re ( χ x y x y ( 3 ) + χ x y y x ( 3 ) ) = ( I pump ref I probe ref I pump I probe ) ( b Re ( TlGaS 2 ) b 0 ref ) ( n 0 n ref,0 ) 2 ( χ x y x y ( 3 ) + χ x y y x ( 3 ) ) ref
Im ( χ x y x y ( 3 ) + χ x y y x ( 3 ) ) = ( I pump ref I probe ref I pump I probe ) ( b Im ( TlGaS 2 ) b 0 ref ) ( n 0 n ref,0 ) 2 ( χ x y x y ( 3 ) + χ x y y x ( 3 ) ) ref

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