Abstract

Two InGaN/GaN multiple-quantum-well (MQW) samples with identical epitaxial structures are grown at different growth rates via metal-organic chemical vapor deposition system. The room temperature photoluminescence intensity of the fast-grown sample is much stronger than that of the slow-grown one. In addition, the fast-grown sample has two luminescence peaks at low temperatures, and the height of main peak anomalously increases with increasing temperature below 100 K. Such improved emission efficiency and the untypical temperature-induced increase of peak height can be attributed to the carrier’s transferring between two kinds of localized traps with different potential depth in the fast-grown sample, where the distribution of indium is seriously inhomogeneous. The enhanced fluctuation of indium is caused by the reduced migration time of adsorbed atoms due to the increased growth rate during the epitaxial growth of MQW region.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells

Liyuan Peng, Degang Zhao, Desheng Jiang, Jianjun Zhu, Zongshun Liu, Ping Chen, Jing Yang, Wei Liu, Feng Liang, Yao Xing, Shuangtao Liu, Liqun Zhang, Wenjie Wang, Mo Li, Yuantao Zhang, and Guotong Du
Opt. Express 26(17) 21736-21744 (2018)

Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du
Opt. Express 23(12) 15935-15943 (2015)

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers

Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park
Opt. Express 22(S4) A1164-A1173 (2014)

References

  • View by:
  • |
  • |
  • |

  1. E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
    [Crossref] [PubMed]
  2. C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
    [Crossref]
  3. D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
    [Crossref]
  4. L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
    [Crossref]
  5. D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
    [Crossref]
  6. Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
    [Crossref]
  7. F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
    [Crossref]
  8. M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
    [Crossref] [PubMed]
  9. C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
    [Crossref]
  10. P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
    [Crossref]
  11. D. S. P. Tanner, M. A. Caro, E. P. O’Reilly, and S. Schulz, “Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states,” RSC Advances 6(69), 64513–64530 (2016).
    [Crossref]
  12. K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
    [Crossref]
  13. S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
    [Crossref]
  14. T. Lin, H. C. Kuo, X. D. Jiang, and Z. C. Feng, “Recombination pathways in green InGaN/GaN multiple quantum wells,” Nanoscale Res. Lett. 12(1), 137 (2017).
    [Crossref] [PubMed]
  15. Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
    [Crossref]
  16. W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
    [Crossref] [PubMed]
  17. M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
    [Crossref] [PubMed]
  18. K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
    [Crossref]
  19. X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
    [Crossref]
  20. D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
    [Crossref] [PubMed]
  21. J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
    [Crossref]

2017 (9)

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
[Crossref]

T. Lin, H. C. Kuo, X. D. Jiang, and Z. C. Feng, “Recombination pathways in green InGaN/GaN multiple quantum wells,” Nanoscale Res. Lett. 12(1), 137 (2017).
[Crossref] [PubMed]

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

2016 (8)

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

D. S. P. Tanner, M. A. Caro, E. P. O’Reilly, and S. Schulz, “Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states,” RSC Advances 6(69), 64513–64530 (2016).
[Crossref]

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

2015 (2)

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

2005 (1)

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

1996 (1)

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Akasaki, I.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Aleksiejunas, R.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

Amano, H.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Auf der Maur, M.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Averboukh, B.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Baek, J. H.

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Caro, M. A.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

D. S. P. Tanner, M. A. Caro, E. P. O’Reilly, and S. Schulz, “Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states,” RSC Advances 6(69), 64513–64530 (2016).
[Crossref]

Chen, P.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Cheng, Y.

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

Cho, Y.-H.

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Choi, S.

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Chung, T.-H.

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Davies, M. J.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

Dawson, P.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

Di Carlo, A.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Du, G. T.

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Duan, L. H.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

Dunin-Borkowski, R. E.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

Feng, B.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

Feng, M. X.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Feng, Z. C.

T. Lin, H. C. Kuo, X. D. Jiang, and Z. C. Feng, “Recombination pathways in green InGaN/GaN multiple quantum wells,” Nanoscale Res. Lett. 12(1), 137 (2017).
[Crossref] [PubMed]

Griffiths, J. T.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

Han, Y. J.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Hao, Z. B.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

He, X. G.

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

Horton, M. K.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

Huang, Y.

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

Humphreys, C. J.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

Ikeda, M.

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Jarašiunas, K.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

Jiang, D. S.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Jiang, L. R.

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

Jiang, X. D.

T. Lin, H. C. Kuo, X. D. Jiang, and Z. C. Feng, “Recombination pathways in green InGaN/GaN multiple quantum wells,” Nanoscale Res. Lett. 12(1), 137 (2017).
[Crossref] [PubMed]

Jones, C. M.

C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
[Crossref]

Kappers, M. J.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

Kim, J. K.

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

Kim, M.

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Kioupakis, E.

C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
[Crossref]

Kovacs, A.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

Kovalev, D.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Ku, P.-C.

C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
[Crossref]

Kuo, H. C.

T. Lin, H. C. Kuo, X. D. Jiang, and Z. C. Feng, “Recombination pathways in green InGaN/GaN multiple quantum wells,” Nanoscale Res. Lett. 12(1), 137 (2017).
[Crossref] [PubMed]

Lee, J.-H.

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Li, D. Y.

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Li, H. T.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Li, J. M.

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Li, M.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

Li, X.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Li, X. J.

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

Li, Z. C.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Liang, F.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

Lin, T.

T. Lin, H. C. Kuo, X. D. Jiang, and Z. C. Feng, “Recombination pathways in green InGaN/GaN multiple quantum wells,” Nanoscale Res. Lett. 12(1), 137 (2017).
[Crossref] [PubMed]

Liu, B. T.

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Liu, J. P.

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Liu, W.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Liu, Z. Q.

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

Liu, Z. S.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Lugauer, H.-J.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

Luo, Y.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Ma, P.

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Massabuau, F. C.-P.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

Meyer, B. K.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Miasojedovas, S.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

Nomeika, K.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

O’Hanlon, T. J.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

O’Reilly, E. P.

D. S. P. Tanner, M. A. Caro, E. P. O’Reilly, and S. Schulz, “Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states,” RSC Advances 6(69), 64513–64530 (2016).
[Crossref]

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

Oehler, F.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

Oliver, R. A.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

Park, C.

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Pecchia, A.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Penazzi, G.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Pietzonka, I.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

Qi, C. L.

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

Ren, C. X.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

Rhode, S. L.

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

Rodrigues, W.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Schubert, E. F.

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

Schulz, S.

D. S. P. Tanner, M. A. Caro, E. P. O’Reilly, and S. Schulz, “Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states,” RSC Advances 6(69), 64513–64530 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

Shi, M.

Shi, Y. S.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

Strassburg, M.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

Sun, C. Z.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Sun, Q.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

Sutherland, D.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

Tang, F.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

Tanner, D. S. P.

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

D. S. P. Tanner, M. A. Caro, E. P. O’Reilly, and S. Schulz, “Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states,” RSC Advances 6(69), 64513–64530 (2016).
[Crossref]

Teng, C.-H.

C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
[Crossref]

Tian, A. Q.

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Tomašiunas, R.

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

Volm, D.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Wang, H.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Wang, J.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Wang, J. X.

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Wang, L.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Wang, Q. J.

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

Wang, W. J.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

Wang, Z. L.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Wen, P. Y.

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Wu, D. X.

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Xing, Y. C.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Xiong, B.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Yan, Q. M.

C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
[Crossref]

Yan, W.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

Yang, D.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Yang, H.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Yang, J.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

Yi, X. Y.

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

Yu, J. D.

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Zhan, T.

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

Zhang, L. Q.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Zhang, S.

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Zhang, S. M.

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Zhang, Y. T.

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Zhao, D. G.

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

Zhao, D. M.

Zhao, H. M.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

Zhou, K.

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

Zhu, J. J.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
[Crossref] [PubMed]

ACS Photonics (1)

Z. L. Wang, L. Wang, Y. C. Xing, D. Yang, J. D. Yu, Z. B. Hao, C. Z. Sun, B. Xiong, Y. J. Han, J. Wang, H. T. Li, and Y. Luo, “Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells,” ACS Photonics 4(8), 2078–2084 (2017).
[Crossref]

Appl. Phys. Lett. (2)

S. Schulz, D. S. P. Tanner, E. P. O’Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 109(22), 223102 (2016).
[Crossref]

C. M. Jones, C.-H. Teng, Q. M. Yan, P.-C. Ku, and E. Kioupakis, “Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations,” Appl. Phys. Lett. 111(11), 113501 (2017).
[Crossref]

Chin. Phys. B (1)

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, W. Liu, F. Liang, L. Q. Zhang, H. Yang, W. J. Wang, and M. Li, “Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,” Chin. Phys. B 26(7), 077101 (2017).
[Crossref]

J. Appl. Phys. (2)

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

F. C.-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O’Hanlon, A. Kovacs, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121(1), 013104 (2017).
[Crossref]

J. Cryst. Growth (1)

K. Zhou, M. Ikeda, J. P. Liu, S. M. Zhang, Z. C. Li, M. X. Feng, A. Q. Tian, P. Y. Wen, D. Y. Li, L. Q. Zhang, and H. Yang, “Abnormal InGaN growth behavior inindium-desorption regime in metalorganic chemical vapor deposition,” J. Cryst. Growth 409, 51–55 (2015).
[Crossref]

J. Lumin. (1)

K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, and H.-J. Lugauer, “Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures,” J. Lumin. 188, 301–306 (2017).
[Crossref]

J. Semicond. (5)

C. L. Qi, Y. Huang, T. Zhan, Q. J. Wang, X. Y. Yi, and Z. Q. Liu, “Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure,” J. Semicond. 38(8), 084005 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38(5), 051001 (2017).
[Crossref]

L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, and H. Yang, “GaN-based green laser diodes,” J. Semicond. 37(11), 111001 (2016).
[Crossref]

D. X. Wu, P. Ma, B. T. Liu, S. Zhang, J. X. Wang, and J. M. Li, “Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates,” J. Semicond. 37(10), 104003 (2016).
[Crossref]

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37(4), 044006 (2016).
[Crossref]

Nanoscale Res. Lett. (1)

T. Lin, H. C. Kuo, X. D. Jiang, and Z. C. Feng, “Recombination pathways in green InGaN/GaN multiple quantum wells,” Nanoscale Res. Lett. 12(1), 137 (2017).
[Crossref] [PubMed]

Opt. Express (1)

Phys. Rev. B Condens. Matter (1)

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, “Free exciton emission in GaN,” Phys. Rev. B Condens. Matter 54(4), 2518–2522 (1996).
[Crossref] [PubMed]

Phys. Rev. Lett. (1)

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

RSC Advances (1)

D. S. P. Tanner, M. A. Caro, E. P. O’Reilly, and S. Schulz, “Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states,” RSC Advances 6(69), 64513–64530 (2016).
[Crossref]

Sci. Rep. (1)

M. Kim, S. Choi, J.-H. Lee, C. Park, T.-H. Chung, J. H. Baek, and Y.-H. Cho, “Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis,” Sci. Rep. 7, 42221 (2017).
[Crossref] [PubMed]

Science (1)

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

Superlattices Microstruct. (1)

X. Li, D. G. Zhao, J. Yang, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, W. Liu, X. G. He, X. J. Li, F. Liang, L. Q. Zhang, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, “Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,” Superlattices Microstruct. 97, 186–192 (2016).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1 Room-temperature PL spectra of samples A (black) and B (red) measured under excitation power of 20 mW. The inset shows the (0002) high resolution XRD ω/2θ scan of both samples.
Fig. 2
Fig. 2 PL spectra of samples A (left) and B (right) at several different temperatures, measured under excitation power of 20 mW. The arrows indicate the main luminescence peaks and the colored circles denote the variation of main peak position. At very low temperatures, the phonon replica of main peak can be seen for all samples, and there is an additional higher-energy peak at the right side of main peak only for sample B.
Fig. 3
Fig. 3 Temperature dependencies of integral PL intensity (a) and main peak height (b) for samples A and B measured under excitation power of 20 mW.
Fig. 4
Fig. 4 PL spectra of sample B at several selected temperatures, measured under the laser power of 20 mW. The inset shows the variations of peak height of main peak (black squares) and higher-energy peak (red circles) with temperature, respectively.

Metrics