Abstract

In this work, we explore the possibility of using hybrid graphene/GaN phototransistors to get high responsivity, high speed, and large photosensitive area. The responsivity of our hybrid graphene/GaN phototransistors with a relatively large 15.2 mm2 active area reaches 361 mA/W at 10 V and the response time is ~5 ms, much better performance than traditional GaN photodetectors. This is because graphene acts as the carrier transport channel with a high mobility and greatly increases the charge collection efficiency. Our results should shed more light on the role of graphene in hybrid phototransistors and open a feasible pathway to develop large area ultraviolet photodetectors with high responsivity and high speed.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. B. Kim, G. Yang, H. Kim, K. H. Baik, M. A. Mastro, and J. K. Hite, C. R. E. JrF. Ren, S. J. Pearton, and J. Kim, “GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes,” Opt. Express 21(23), 29025–29030 (2013).
    [Crossref] [PubMed]
  2. Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
    [Crossref] [PubMed]
  3. M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
    [Crossref]
  4. C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
    [Crossref]
  5. F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
    [Crossref]
  6. A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
    [Crossref]
  7. J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
    [Crossref]
  8. F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
    [Crossref]
  9. Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
    [Crossref]
  10. K. Y. Lee, M. K. Gupta, and S. Kim, “Transparent flexible stretchable piezoelectric and triboelectric nanogenerators for powering portable electronics,” Nano Energy 14, 139–160 (2015).
    [Crossref]
  11. Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
    [Crossref] [PubMed]
  12. S. Grover, S. Dubey, J. P. Mathew, and M. M. Deshmukh, “Limits on the bolometric response of graphene due to flicker noise,” Appl. Phys. Lett. 106(5), 051113 (2015).
    [Crossref]
  13. F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
    [Crossref] [PubMed]
  14. F. Liu and S. Kar, “Quantum carrier reinvestment-induced ultrahigh and broadband photocurrent responses in graphene-silicon junctions,” ACS Nano 8(10), 10270–10279 (2014).
    [Crossref] [PubMed]
  15. X. Guo, W. Wang, H. Nan, Y. Yu, J. Jiang, W. Zhao, J. Li, Z. Zafar, N. Xiang, Z. Ni, W. Hu, Y. You, and Z. Ni, “High-performance graphene photodetector by interfacial gating,” Optica 3(10), 1066–1070 (2016).
    [Crossref]
  16. G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
    [Crossref] [PubMed]
  17. H. W. Jang, S. Y. Kim, and J. L. Lee, “Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN,” J. Appl. Phys. 94(3), 1748–1752 (2003).
    [Crossref]
  18. L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
    [Crossref]
  19. A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
    [Crossref]
  20. C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
    [Crossref]
  21. M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
    [Crossref]
  22. G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
    [Crossref]
  23. G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
    [Crossref]
  24. X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
    [Crossref] [PubMed]
  25. Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
    [Crossref]
  26. D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
    [Crossref] [PubMed]
  27. N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
    [Crossref]
  28. A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
    [Crossref]

2017 (2)

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

2016 (3)

X. Guo, W. Wang, H. Nan, Y. Yu, J. Jiang, W. Zhao, J. Li, Z. Zafar, N. Xiang, Z. Ni, W. Hu, Y. You, and Z. Ni, “High-performance graphene photodetector by interfacial gating,” Optica 3(10), 1066–1070 (2016).
[Crossref]

M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
[Crossref]

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

2015 (6)

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

K. Y. Lee, M. K. Gupta, and S. Kim, “Transparent flexible stretchable piezoelectric and triboelectric nanogenerators for powering portable electronics,” Nano Energy 14, 139–160 (2015).
[Crossref]

S. Grover, S. Dubey, J. P. Mathew, and M. M. Deshmukh, “Limits on the bolometric response of graphene due to flicker noise,” Appl. Phys. Lett. 106(5), 051113 (2015).
[Crossref]

2014 (4)

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

F. Liu and S. Kar, “Quantum carrier reinvestment-induced ultrahigh and broadband photocurrent responses in graphene-silicon junctions,” ACS Nano 8(10), 10270–10279 (2014).
[Crossref] [PubMed]

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

2013 (3)

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

B. Kim, G. Yang, H. Kim, K. H. Baik, M. A. Mastro, and J. K. Hite, C. R. E. JrF. Ren, S. J. Pearton, and J. Kim, “GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes,” Opt. Express 21(23), 29025–29030 (2013).
[Crossref] [PubMed]

B. Kim, G. Yang, H. Kim, K. H. Baik, M. A. Mastro, and J. K. Hite, C. R. E. JrF. Ren, S. J. Pearton, and J. Kim, “GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes,” Opt. Express 21(23), 29025–29030 (2013).
[Crossref] [PubMed]

2012 (4)

J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
[Crossref]

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

2010 (1)

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
[Crossref]

2009 (1)

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

2004 (1)

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
[Crossref]

2003 (2)

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

H. W. Jang, S. Y. Kim, and J. L. Lee, “Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN,” J. Appl. Phys. 94(3), 1748–1752 (2003).
[Crossref]

1997 (1)

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Aggarwal, N.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Anand, K.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Atalla, M. R. M.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Avouris, P.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Babichev, A. V.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Badioli, M.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Baik, K. H.

Barvat, A.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Bathe, R.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

Bernechea, M.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Bonaccorso, F.

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
[Crossref]

Bullough, T. J.

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
[Crossref]

Cai, W.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Cao, Y.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Cha, H.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Chalker, P. R.

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
[Crossref]

Chen, D.

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

Chen, S.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Chen, Y.

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Chen, Z.

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Cheng, Z.

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Cho, B.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Cole, M. T.

J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
[Crossref]

Dai, Y.

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Deshmukh, M. M.

S. Grover, S. Dubey, J. P. Mathew, and M. M. Deshmukh, “Limits on the bolometric response of graphene due to flicker noise,” Appl. Phys. Lett. 106(5), 051113 (2015).
[Crossref]

Diouf, O. S.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

Dubey, S.

S. Grover, S. Dubey, J. P. Mathew, and M. M. Deshmukh, “Limits on the bolometric response of graphene due to flicker noise,” Appl. Phys. Lett. 106(5), 051113 (2015).
[Crossref]

Egawa, T.

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Egorov, A. Y.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Elahi, A. M.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Ferrari, A. C.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
[Crossref]

Fu, X.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Gan, L.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

Garcia de Arquer, F. P.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Gass, M. H.

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
[Crossref]

Gatti, F.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Gaudreau, L.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Gong, X.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Grover, S.

S. Grover, S. Dubey, J. P. Mathew, and M. M. Deshmukh, “Limits on the bolometric response of graphene due to flicker noise,” Appl. Phys. Lett. 106(5), 051113 (2015).
[Crossref]

Gu, H.

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

Gundimeda, A.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Guo, X.

X. Guo, W. Wang, H. Nan, Y. Yu, J. Jiang, W. Zhao, J. Li, Z. Zafar, N. Xiang, Z. Ni, W. Hu, Y. You, and Z. Ni, “High-performance graphene photodetector by interfacial gating,” Optica 3(10), 1066–1070 (2016).
[Crossref]

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

Gupta, G.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Gupta, M. K.

K. Y. Lee, M. K. Gupta, and S. Kim, “Transparent flexible stretchable piezoelectric and triboelectric nanogenerators for powering portable electronics,” Nano Energy 14, 139–160 (2015).
[Crossref]

Hahm, S.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Hao, X.

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Hasan, T.

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
[Crossref]

Heeger, A. J.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Heo, J.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Hite, J. K.

Ho, P.

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Hong, S.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Hu, W.

Hu, Z.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

Huang, X.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

Huo, Q.

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Husale, S.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Ishikawa, H.

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Jang, H. W.

H. W. Jang, S. Y. Kim, and J. L. Lee, “Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN,” J. Appl. Phys. 94(3), 1748–1752 (2003).
[Crossref]

Jeong, H.

M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
[Crossref]

Jiang, H.

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Jiang, J.

Jiang, Z.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Jimbo, T.

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Jin, C.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

Joyce, T. B.

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
[Crossref]

Julien, F. H.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Kang, S.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Kar, S.

F. Liu and S. Kar, “Quantum carrier reinvestment-induced ultrahigh and broadband photocurrent responses in graphene-silicon junctions,” ACS Nano 8(10), 10270–10279 (2014).
[Crossref] [PubMed]

Ke, F.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

Khanna, S. P.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Kim, B.

Kim, H.

Kim, J.

Kim, K.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Kim, S.

K. Y. Lee, M. K. Gupta, and S. Kim, “Transparent flexible stretchable piezoelectric and triboelectric nanogenerators for powering portable electronics,” Nano Energy 14, 139–160 (2015).
[Crossref]

Kim, S. Y.

H. W. Jang, S. Y. Kim, and J. L. Lee, “Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN,” J. Appl. Phys. 94(3), 1748–1752 (2003).
[Crossref]

Konstantatos, G.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Koppens, F. H. L.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Krishna, S.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Kumar, G.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Kumar, M.

M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
[Crossref]

Lavenus, P.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Lee, C.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Lee, D.

M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
[Crossref]

Lee, J.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Lee, J. H.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Lee, J. L.

H. W. Jang, S. Y. Kim, and J. L. Lee, “Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN,” J. Appl. Phys. 94(3), 1748–1752 (2003).
[Crossref]

Lee, K.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Lee, K. Y.

K. Y. Lee, M. K. Gupta, and S. Kim, “Transparent flexible stretchable piezoelectric and triboelectric nanogenerators for powering portable electronics,” Nano Energy 14, 139–160 (2015).
[Crossref]

Lee, Y. H.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Li, D.

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Li, J.

Li, X.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Li, Z.

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Liao, Z.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Lim, S. C.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Lin, C.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

Lin, F.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Lin, Y.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Lindvall, N.

J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
[Crossref]

Liu, F.

F. Liu and S. Kar, “Quantum carrier reinvestment-induced ultrahigh and broadband photocurrent responses in graphene-silicon junctions,” ACS Nano 8(10), 10270–10279 (2014).
[Crossref] [PubMed]

Liu, J.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Lu, H.

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

Luo, A.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Mastro, M. A.

Mathew, J. P.

S. Grover, S. Dubey, J. P. Mathew, and M. M. Deshmukh, “Limits on the bolometric response of graphene due to flicker noise,” Appl. Phys. Lett. 106(5), 051113 (2015).
[Crossref]

Maurya, K. K.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Meng, J.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Miao, G.

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Mohammad, S. N.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

Moon, J. S.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Motayed, A.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

Mueller, T.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Nan, H.

Nguyen, V. L.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Ni, Z.

Nilsson, B.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Okyay, A. K.

M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
[Crossref]

Osmond, J.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
[Crossref] [PubMed]

Pal, P.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Papworth, A. J.

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
[Crossref]

Park, H.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Park, S.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Pearton, S. J.

Polat, K.

M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
[Crossref]

Polini, M.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Prakash, N.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Ren, F.

B. Kim, G. Yang, H. Kim, K. H. Baik, M. A. Mastro, and J. K. Hite, C. R. E. JrF. Ren, S. J. Pearton, and J. Kim, “GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes,” Opt. Express 21(23), 29025–29030 (2013).
[Crossref] [PubMed]

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

Shao, Y.

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Sharma, A.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Sharma, N. D.

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

Shen, B.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Shieh, C. L.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Shin, Y. S.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Shu, C.

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Singh, M.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Singh, S. P.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Soga, T.

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Song, H.

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Sun, J.

J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
[Crossref]

Sun, Q.

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

Sun, X.

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Sun, Z.

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
[Crossref]

Tchernycheva, M.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Teo, K. B. K.

J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
[Crossref]

Tian, Y.

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Tong, M.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Tong, N.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

Tsang, H. K.

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Tse, G.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Tu, L.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Umeno, M.

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Vispute, R. D.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

Vitiello, M. S.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Vu, Q. A.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Wan, X.

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Wang, E.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

Wang, G.

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Wang, J.

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Wang, L.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Wang, W.

Watanabe, J.

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Wei, L.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Won, C.

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Wood, M. C.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

Wu, Y.

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Xia, Y.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

Xiang, N.

Xu, J.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Yang, G.

Yang, W.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

Yin, X.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

You, G.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

You, Y.

Yu, D.

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

Yu, G.

X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm,” Science 325(5948), 1665–1667 (2009).
[Crossref] [PubMed]

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

Yu, W. J.

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
[Crossref] [PubMed]

Yu, Y.

Yurgens, A.

J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
[Crossref]

Zafar, Z.

Zhang, H.

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

Zhang, L.

Y. Tian, Y. Shao, Y. Wu, X. Hao, L. Zhang, Y. Dai, and Q. Huo, “Direct growth of freestanding GaN on c-face SiC by HVPE,” Sci. Rep. 5(1), 10748 (2015).
[Crossref] [PubMed]

Zhang, R.

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

Zhang, W.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Zhang, Y.

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

Zhao, R.

C. Lin, X. Huang, F. Ke, C. Jin, N. Tong, X. Yin, L. Gan, X. Guo, R. Zhao, W. Yang, E. Wang, and Z. Hu, “Quasi-one-dimensional graphene superlattices formed on high-index surfaces,” Phys. Rev. B 89(8), 085416 (2014).
[Crossref]

Zhao, W.

Zheng, Y.

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

Zhou, J.

L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
[Crossref]

ACS Nano (1)

F. Liu and S. Kar, “Quantum carrier reinvestment-induced ultrahigh and broadband photocurrent responses in graphene-silicon junctions,” ACS Nano 8(10), 10270–10279 (2014).
[Crossref] [PubMed]

Adv. Mater. (1)

D. Li, X. Sun, H. Song, Z. Li, Y. Chen, H. Jiang, and G. Miao, “Realization of a high-performance GaN UV detector by nanoplasmonic enhancement,” Adv. Mater. 24(6), 845–849 (2012).
[Crossref] [PubMed]

Adv. Optical Mater. (1)

Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, P. Ho, and J. Xu, “High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode,” Adv. Optical Mater. 3(9), 1207–1214 (2015).
[Crossref]

Appl. Phys. Lett. (8)

F. Lin, S. Chen, J. Meng, G. Tse, X. Fu, B. Shen, Z. Liao, and D. Yu, “Graphene/GaN diodes for ultraviolet and visible photodetectors,” Appl. Phys. Lett. 105(7), 073103 (2014).
[Crossref]

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, and A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes,” Appl. Phys. Lett. 100(2), 022102 (2012).
[Crossref]

S. Grover, S. Dubey, J. P. Mathew, and M. M. Deshmukh, “Limits on the bolometric response of graphene due to flicker noise,” Appl. Phys. Lett. 106(5), 051113 (2015).
[Crossref]

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. Lin, L. Tu, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact,” Appl. Phys. Lett. 103(20), 201103 (2013).
[Crossref]

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker, “Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy,” Appl. Phys. Lett. 84(9), 1453–1455 (2004).
[Crossref]

G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]

IEEE Photonics Technol. Lett. (2)

G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, and Y. Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates,” IEEE Photonics Technol. Lett. 25(7), 652–654 (2013).
[Crossref]

Z. Jiang, W. Zhang, A. Luo, M. R. M. Atalla, G. You, X. Li, L. Wang, J. Liu, A. M. Elahi, L. Wei, Y. Zhang, and J. Xu, “Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors,” IEEE Photonics Technol. Lett. 27(9), 994–997 (2015).
[Crossref]

J. Appl. Phys. (2)

H. W. Jang, S. Y. Kim, and J. L. Lee, “Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN,” J. Appl. Phys. 94(3), 1748–1752 (2003).
[Crossref]

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93(2), 1087–1094 (2003).
[Crossref]

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M. Kumar, H. Jeong, K. Polat, A. K. Okyay, and D. Lee, “Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector,” J. Phys. D Appl. Phys. 49(27), 275105 (2016).
[Crossref]

Jpn. J. Appl. Phys. (1)

C. Lee, S. Kang, H. Cha, C. Won, S. Hong, B. Cho, H. Park, J. Lee, and S. Hahm, “GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes,” Jpn. J. Appl. Phys. 54(6S1), 06FF08 (2015).
[Crossref]

Nano Energy (1)

K. Y. Lee, M. K. Gupta, and S. Kim, “Transparent flexible stretchable piezoelectric and triboelectric nanogenerators for powering portable electronics,” Nano Energy 14, 139–160 (2015).
[Crossref]

Nano Lett. (1)

Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee, and W. J. Yu, “Tuning carrier tunneling in van der Waals heterostructures for ultra high detectivity,” Nano Lett. 17(1), 453–459 (2017).
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F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
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G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. Garcia de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7(6), 363–368 (2012).
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L. Gan, J. Zhou, F. Ke, H. Gu, D. Li, Z. Hu, Q. Sun, and X. Guo, “Tuning the properties of graphene using a reversible gas-phase reaction,” NPG Asia Mater. 4(11), e31 (2012).
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Figures (4)

Fig. 1
Fig. 1 (a) The plane structure with graphene. (b) The mesa structure with graphene. (c) Raman spectrum of the graphene sheet.
Fig. 2
Fig. 2 (a) Energy band diagram of the plane structure with graphene. (b) Schematics of the photocarrier movement and the energy band in the mesa structure with graphene. (c), (d) Photocurrent versus voltage for the plane structure without and with graphene at various levels of incident light power, 100% is 5.83 mW. (e), (f) Photocurrent versus voltage for the mesa structure without and with graphene at various levels of incident light power. The insets show the dark current. For simplicity, Gr. denotes graphene.
Fig. 3
Fig. 3 Photoresponse characters of devices for the light at wavelength of 325 nm. (a) Photocurrent and responsivity versus illumination power at the applied voltage of 10 V of plane structure without (w/o) and with (w) Gr.. (b) Photocurrent and responsivity versus illumination power at the applied voltage of 10 V of mesa structures without and with Gr..
Fig. 4
Fig. 4 The response time under 5.83mW incident light power. (a) τr is 5.05 ms and τf is 5.11 ms in the plane structure with graphene. (b) τr is 3.2 ms and τf is 1.1 ms in the mesa structure with graphene.

Tables (1)

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Table 1 Performance comparison of GaN-based photodetectors. “ ” indicates traditional GaN-based photodetectors, and “ ” indicates graphene/GaN photodetectors.

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