Abstract

A metal grating on top of a light-emitting diode (LED) with a designed grating period for compensating the momentum mismatch can enhance the surface plasmon polariton (SPP) coupling effect with the quantum wells (QWs) to improve LED performance. Here, we demonstrate the experimental results showing that the induced localized surface plasmon (LSP) resonance on such a metal grating can dominate the QW coupling effect for improving LED performance, particularly when grating ridge height is large. The finding is illustrated by fabricating Ag gratings on single-QW, green-emitting LEDs of different p-type thicknesses with varied grating ridge height and width such that the distance between the grating ridge tip and the QW can be controlled. Reflection spectra of the Ag grating structures are measured and simulated to identify the SPP or LSP resonance behaviors at the QW emission wavelength. The measured results of LED performances show that in the LED samples under study, both SPP and LSP couplings can lead to significant enhancements of internal quantum efficiency and electroluminescence intensity. At the designated QW emission wavelength, with a grating period theoretically designed for momentum matching, the LSP coupling effect is stronger, when compared with SPP coupling.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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2017 (2)

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

2016 (3)

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24(10), A856–A867 (2016).
[Crossref] [PubMed]

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

2015 (1)

2013 (2)

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

H. Zhang, J. Zhu, Z. Zhu, Y. Jin, Q. Li, and G. Jin, “Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating,” Opt. Express 21(11), 13492–13501 (2013).
[Crossref] [PubMed]

2012 (1)

2011 (4)

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

G. Sun and J. B. Khurgin, “Plasmon enhancement of luminescence by metal nanoparticles,” IEEE J. Sel. Top. Quantum Electron. 17(1), 110–118 (2011).
[Crossref]

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

2010 (2)

C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

2009 (2)

G. Sun, J. B. Khurgin, and C. C. Yang, “Impact of high-order surface plasmon modes of metal nanoparticles on enhancement of optical emission,” Appl. Phys. Lett. 95(17), 171103 (2009).
[Crossref]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

2008 (4)

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref] [PubMed]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

2007 (3)

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]

G. Sun, J. B. Khurgin, and R. A. Soref, “Practicable enhancement of spontaneous emission using surface plasmons,” Appl. Phys. Lett. 90(11), 111107 (2007).
[Crossref]

J. B. Khurgin, G. Sun, and R. A. Soref, “Enhancement of luminescence efficiency using surface plasmon polaritons: Figures of merit,” J. Opt. Soc. Am. B 24(8), 1968–1980 (2007).
[Crossref]

2005 (1)

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Bellessa, J.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Byeon, C. C.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Cao, W.

Chang, W. M.

Chen, C. Y.

C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012).
[Crossref] [PubMed]

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref] [PubMed]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]

Chen, H.

Chen, H. L.

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

Chen, H. S.

Chen, H. T.

Chen, S. H.

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

Chen, Y. S.

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

Chiang, H. C.

Cho, C. Y.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Cho, Y. H.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

Chuang, W. H.

Chung, W. L.

Dogan, S.

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Fu, H.

Fu, Y.

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Ge, H.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Guo, X.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Homeyer, E.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Hong, S. H.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

Hsieh, C.

Hu, X.

Huang, C. F.

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref] [PubMed]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]

Huang, J. J.

Huang, X.

Jagadish, C.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Jin, G.

Jin, Y.

Johnstone, D.

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Jung, G. Y.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

Khurgin, J. B.

G. Sun and J. B. Khurgin, “Plasmon enhancement of luminescence by metal nanoparticles,” IEEE J. Sel. Top. Quantum Electron. 17(1), 110–118 (2011).
[Crossref]

G. Sun, J. B. Khurgin, and C. C. Yang, “Impact of high-order surface plasmon modes of metal nanoparticles on enhancement of optical emission,” Appl. Phys. Lett. 95(17), 171103 (2009).
[Crossref]

G. Sun, J. B. Khurgin, and R. A. Soref, “Practicable enhancement of spontaneous emission using surface plasmons,” Appl. Phys. Lett. 90(11), 111107 (2007).
[Crossref]

J. B. Khurgin, G. Sun, and R. A. Soref, “Enhancement of luminescence efficiency using surface plasmon polaritons: Figures of merit,” J. Opt. Soc. Am. B 24(8), 1968–1980 (2007).
[Crossref]

Kiang, Y. W.

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

C. H. Lin, C. Y. Su, E. Zhu, Y. F. Yao, C. Hsieh, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Modulation behaviors of surface plasmon coupled light-emitting diode,” Opt. Express 23(6), 8150–8161 (2015).
[Crossref] [PubMed]

C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012).
[Crossref] [PubMed]

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

Kim, B. H.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Kim, J. Y.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Kim, K. S.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

Kim, S. T.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

Ko, H.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

Kuo, Y.

Kwon, M. K.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Lee, S. J.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

Lee, S. M.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

Li, Q.

Li, Y.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Liao, C. H.

Lin, C. H.

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

C. H. Lin, C. Y. Su, E. Zhu, Y. F. Yao, C. Hsieh, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Modulation behaviors of surface plasmon coupled light-emitting diode,” Opt. Express 23(6), 8150–8161 (2015).
[Crossref] [PubMed]

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

Liu, B.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Liu, W. H.

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

Lu, C. F.

Lu, Y. C.

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref] [PubMed]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]

Lu, Z.

Mattila, P.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Mikkelson, M.

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Moon, Y. T.

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Morkoç, H.

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Nykanen, H.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Oksanen, J.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Park, I. K.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Park, S. J.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Ren, F. F.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Sadi, T.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Shen, K. C.

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

Song, J. H.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

Sopanen, M.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Soref, R. A.

G. Sun, J. B. Khurgin, and R. A. Soref, “Practicable enhancement of spontaneous emission using surface plasmons,” Appl. Phys. Lett. 90(11), 111107 (2007).
[Crossref]

J. B. Khurgin, G. Sun, and R. A. Soref, “Enhancement of luminescence efficiency using surface plasmon polaritons: Figures of merit,” J. Opt. Soc. Am. B 24(8), 1968–1980 (2007).
[Crossref]

Su, C. Y.

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

C. H. Lin, C. Y. Su, E. Zhu, Y. F. Yao, C. Hsieh, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Modulation behaviors of surface plasmon coupled light-emitting diode,” Opt. Express 23(6), 8150–8161 (2015).
[Crossref] [PubMed]

Su, M. Y.

Suihkonen, S.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Sun, G.

G. Sun and J. B. Khurgin, “Plasmon enhancement of luminescence by metal nanoparticles,” IEEE J. Sel. Top. Quantum Electron. 17(1), 110–118 (2011).
[Crossref]

G. Sun, J. B. Khurgin, and C. C. Yang, “Impact of high-order surface plasmon modes of metal nanoparticles on enhancement of optical emission,” Appl. Phys. Lett. 95(17), 171103 (2009).
[Crossref]

G. Sun, J. B. Khurgin, and R. A. Soref, “Practicable enhancement of spontaneous emission using surface plasmons,” Appl. Phys. Lett. 90(11), 111107 (2007).
[Crossref]

J. B. Khurgin, G. Sun, and R. A. Soref, “Enhancement of luminescence efficiency using surface plasmon polaritons: Figures of merit,” J. Opt. Soc. Am. B 24(8), 1968–1980 (2007).
[Crossref]

Symonds, C.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Tan, H. H.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Ting, S. Y.

Tsai, F. J.

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

Tsai, M. C.

Tu, C. G.

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

C. H. Lin, C. Y. Su, E. Zhu, Y. F. Yao, C. Hsieh, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Modulation behaviors of surface plasmon coupled light-emitting diode,” Opt. Express 23(6), 8150–8161 (2015).
[Crossref] [PubMed]

Tulkki, J.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Tuomisto, F.

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

Wang, J. Y.

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

Wu, Y. R.

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

Xie, Z.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Yang, C. C.

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

C. H. Lin, C. Y. Su, E. Zhu, Y. F. Yao, C. Hsieh, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Modulation behaviors of surface plasmon coupled light-emitting diode,” Opt. Express 23(6), 8150–8161 (2015).
[Crossref] [PubMed]

C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012).
[Crossref] [PubMed]

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

G. Sun, J. B. Khurgin, and C. C. Yang, “Impact of high-order surface plasmon modes of metal nanoparticles on enhancement of optical emission,” Appl. Phys. Lett. 95(17), 171103 (2009).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref] [PubMed]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]

Yang, Y. J.

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

Yao, Y. F.

Ye, J.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Yeh, D. M.

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref] [PubMed]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]

Yu, Z. Y.

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

Yun, F.

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Zhang, G.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Zhang, H.

Zhang, R.

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Zhao, Y.

Zhu, E.

Zhu, J.

Zhu, Z.

ACS Photonics (1)

G. Zhang, X. Guo, F. F. Ren, Y. Li, B. Liu, J. Ye, H. Ge, Z. Xie, R. Zhang, H. H. Tan, and C. Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating,” ACS Photonics 3(10), 1912–1918 (2016).
[Crossref]

Adv. Mater. (1)

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. 20(7), 1253–1257 (2008).
[Crossref]

Appl. Phys. Lett. (10)

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[Crossref]

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[Crossref]

Y. C. Lu, Y. S. Chen, F. J. Tsai, J. Y. Wang, C. H. Lin, C. Y. Chen, Y. W. Kiang, and C. C. Yang, “Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor,” Appl. Phys. Lett. 94(23), 233113 (2009).
[Crossref]

C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]

E. Homeyer, P. Mattila, J. Oksanen, T. Sadi, H. Nykanen, S. Suihkonen, C. Symonds, J. Tulkki, F. Tuomisto, M. Sopanen, and J. Bellessa, “Enhanced light extraction from InGaN/GaN quantum wells with silver gratings,” Appl. Phys. Lett. 102(8), 081110 (2013).
[Crossref]

G. Sun, J. B. Khurgin, and R. A. Soref, “Practicable enhancement of spontaneous emission using surface plasmons,” Appl. Phys. Lett. 90(11), 111107 (2007).
[Crossref]

K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]

K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]

G. Sun, J. B. Khurgin, and C. C. Yang, “Impact of high-order surface plasmon modes of metal nanoparticles on enhancement of optical emission,” Appl. Phys. Lett. 95(17), 171103 (2009).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

G. Sun and J. B. Khurgin, “Plasmon enhancement of luminescence by metal nanoparticles,” IEEE J. Sel. Top. Quantum Electron. 17(1), 110–118 (2011).
[Crossref]

IEEE Trans. Electron Dev. (1)

C. Y. Su, C. G. Tu, W. H. Liu, C. H. Lin, Y. F. Yao, H. T. Chen, Y. R. Wu, Y. W. Kiang, and C. C. Yang, “Enhancing the hole injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron blocking layer,” IEEE Trans. Electron Dev. 64(8), 3226–3233 (2017).
[Crossref]

IEEE Transact. Electron Dev. (1)

C. H. Lin, C. G. Tu, Y. F. Yao, S. H. Chen, C. Y. Su, H. T. Chen, Y. W. Kiang, and C. C. Yang, “High modulation bandwidth of a light-emitting diode with surface plasmon coupling,” IEEE Transact. Electron Dev. 63(10), 3989–3995 (2016).
[Crossref]

J. Appl. Phys. (1)

K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]

J. Opt. Soc. Am. B (1)

Nanotechnology (1)

D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref] [PubMed]

Opt. Express (6)

C. H. Lin, C. Y. Su, E. Zhu, Y. F. Yao, C. Hsieh, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Modulation behaviors of surface plasmon coupled light-emitting diode,” Opt. Express 23(6), 8150–8161 (2015).
[Crossref] [PubMed]

C. Y. Su, C. H. Lin, Y. F. Yao, W. H. Liu, M. Y. Su, H. C. Chiang, M. C. Tsai, C. G. Tu, H. T. Chen, Y. W. Kiang, and C. C. Yang, “Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode,” Opt. Express 25(18), 21526–21536 (2017).
[Crossref] [PubMed]

H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24(10), A856–A867 (2016).
[Crossref] [PubMed]

C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012).
[Crossref] [PubMed]

H. Zhang, J. Zhu, Z. Zhu, Y. Jin, Q. Li, and G. Jin, “Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating,” Opt. Express 21(11), 13492–13501 (2013).
[Crossref] [PubMed]

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4Suppl 4), A914–A929 (2011).
[Crossref] [PubMed]

Phys. Status Solidi (1)

Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, “A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching,” Phys. Status Solidi 202(5), 718–721 (2005).
[Crossref]

Other (2)

S. A. Maier, Plasmonics: Fundamentals and Applications (Springer, 2007).

E. D. Palik, Handbook of Optical Constants of Solids (Academic Press, 1991).

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Figures (14)

Fig. 1
Fig. 1 Schematic demonstration of an LED structure with an Ag grating on the top.
Fig. 2
Fig. 2 (a) and (b): Plan-view SEM and tilted AFM images, respectively, of the grating structure before Ag deposition in sample B-1.
Fig. 3
Fig. 3 Time-resolved PL decay profiles of all the samples under study.
Fig. 4
Fig. 4 (a) and (b): Measured reflection spectra of sample A-1 under the y-z and x-z excitation conditions, respectively, when the incident angles are 15, 25, 45, and 65 degrees (in air from the sapphire side). The values within the parentheses indicate the corresponding incident angles in GaN. (c) and (d): Results similar to parts (a) and (b), respectively, for sample B-1. The vertical dashed lines indicate the QW emission wavelength at 515 nm.
Fig. 5
Fig. 5 (a) and (b): [(c) and (d):] Results similar to Figs. 4(a) and 4(b), respectively, for sample B-2 (C-1).
Fig. 6
Fig. 6 (a) and (b): [(c) and (d):] Results similar to Figs. 4(a) and 4(b), respectively, for sample C-2 (C-3).
Fig. 7
Fig. 7 Theoretical dispersion curves of SPP at the smooth Ag/GaN and grating interfaces as the red and blue curves, respectively. The slant lines, either continuous or dashed, labeled by angles correspond to the light lines of different incident directions in GaN. The horizontal dashed line indicates the QW emission wavelength at 515 nm. With the grating structure of Λ in period, the dispersion curve is left-shifted by 2π/Λ.
Fig. 8
Fig. 8 (a) and (b): Simulated reflection spectra for sample A-1 under the y-z and x-z excitation conditions, respectively, when the incident angles are 0, 15, 22.5, 30, 45, 60, and 75 degrees (in GaN). (c) and (d): Results similar to parts (a) and (b), respectively, for sample B-2.
Fig. 9
Fig. 9 (a) and (b): [(c) and (d):] Simulated results similar to Figs. 8(a) and 8(b), respectively, for sample C-1 (C-3).
Fig. 10
Fig. 10 (a1)-(a6): Simulated charge distributions at nT/6 in time (n = 0-5, respectively) in an electromagnetic oscillation period, T, for the feature at 565 nm with 0 degree in incidence angle of sample A-1 under the y-z excitation, as shown in Fig. 8(a). (b1)-(b6): Results similar to parts (a1)-(a6) for the feature at 665 nm with 45 degrees in incident angle of sample C-1 under the x-z excitation, as shown in Fig. 9(b).
Fig. 11
Fig. 11 I-V curves of the samples under study. The insert shows the magnified portion in the voltage range of 2.5-4.5 V and current range of 10-20 mA.
Fig. 12
Fig. 12 (a1)-(a3), (b1)-(b4), and (c1)-(c5): Photographs of lit LEDs at 100 mA in injected current of the samples under study, as labeled.
Fig. 13
Fig. 13 L-I curves of all the samples under study. The EL intensities are normalized with respect to that of sample A-R at 100 mA in injected current.
Fig. 14
Fig. 14 Variations of relative efficiency of all the samples with injected current. The efficiencies of all the samples are normalized with respect to that of sample C-3 at 10 mA.

Tables (2)

Tables Icon

Table 1 Sample designations and structure parameters.

Tables Icon

Table 2 Optical characterization results and LED performances of various samples.

Metrics