Abstract

β-FeSi2 is of interest for Si-based optoelectronic applications in the past decades. We fabricated β-FeSi2 thin films on the SrTiO3 single crystal by KrF-pulsed laser deposition to open a new view of integrating β-FeSi2 with non-silicon functional materials. After investigating the lateral photovoltaic effect of β-FeSi2/SrTiO3 under the illumination of the 808 nm and 1064 nm steady lasers, we found that the position detection sensitivity can reach 2.68 mVmW−1mm−1 and 2.24 mVmW−1mm−1, respectively. The low degree of nonlinearities of position-sensitive and power-sensitive characteristics provide a promising application of SrTiO3-based β-FeSi2 thin films on position-sensitive detection devices.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  28. T. Miki, Y. Matsui, K. Matsubara, and K. Kishimoto, “Electron paramagnetic resonance of defects in β-iron disilicide ceramics,” J. Appl. Phys. 75(3), 1693–1698 (1994).
    [Crossref]
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    [Crossref]
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    [Crossref]
  32. E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
    [Crossref]
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    [Crossref]
  36. Y. Li, Z.-F. Shi, X.-J. Li, and C.-X. Shan, “Photodetectors based on inorganic halide perovskites: aterials and devices,” Chin. Phys. B 28(1), 017803 (2019).
    [Crossref]

2019 (1)

Y. Li, Z.-F. Shi, X.-J. Li, and C.-X. Shan, “Photodetectors based on inorganic halide perovskites: aterials and devices,” Chin. Phys. B 28(1), 017803 (2019).
[Crossref]

2018 (2)

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

W. Wang, Z. Yan, J. Zhang, J. Lu, H. Qin, and Z. Ni, “High-performance position-sensitive detector based on graphene–silicon heterojunction,” Optica 5(1), 27–31 (2018).
[Crossref]

2013 (1)

S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Appl. Phys. Lett. 102(3), 032107 (2013).
[Crossref]

2012 (1)

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

2011 (2)

J. Henry and J. Livingstone, “Optimizing the wavelength response in one-dimensional p-Si Schottky barrier optical PSDs,” Phys. Status Solidi., A Appl. Mater. Sci. 208(7), 1718–1725 (2011).
[Crossref]

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

2010 (2)

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

2009 (2)

M. Shaban, S. Izumi, K. Nomoto, and T. Yoshitake, “n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature,” Appl. Phys. Lett. 95(16), 162102 (2009).
[Crossref]

M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake, “Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature,” Appl. Phys. Lett. 94(22), 222113 (2009).
[Crossref]

2008 (1)

Z. Liu, M. Tanaka, R. Kuroda, M. Osamura, and Y. Makita, “Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate,” Appl. Phys. Lett. 93(2), 021907 (2008).
[Crossref]

2007 (1)

M. Shaban, K. Nakashima, and T. Yoshitake, “Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering,” Jpn. J. Appl. Phys. 46(12), 7708–7710 (2007).
[Crossref]

2006 (3)

J. H. Hao, J. Gao, and H. K. Wong, “Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications,” Thin Solid Films 515(2), 559–562 (2006).
[Crossref]

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

T. Sunohara, K. Kobayashi, and T. Suemasu, “Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,” Thin Solid Films 508(1-2), 371–375 (2006).
[Crossref]

2004 (1)

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

2003 (1)

J. Tani and H. Kido, “First-principle study of native point defects in β-FeSi2,” J. Alloys Compd. 352(1-2), 153–157 (2003).
[Crossref]

2002 (1)

S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiruma, “Room-temperature 1.56 µm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 11A), L1200–L1202 (2002).
[Crossref]

2001 (1)

K. van Benthem, C. Elsässer, and R. H. French, “Bulk electronic structure of SrTiO3: experiment and theory,” J. Appl. Phys. 90(12), 6156–6164 (2001).
[Crossref]

1999 (2)

H.-U. Habermeier, X. Li, P. Zhang, and B. Leibold, “Anisotropy of thermoelectric properties in La2/3Ca1/3MnO3 thin films studied by laser-induced transient voltages,” Solid State Commun. 110(9), 473–478 (1999).
[Crossref]

K. Okajima, C. Wen, M. Ihara, I. Sakata, and K. Yamada, “Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition,” Jpn. J. Appl. Phys. 38(Part 1, No. 2A), 781–786 (1999).
[Crossref]

1998 (1)

S. J. Clark, H. M. Al-Allak, S. Brand, and R. A. Abram, “Structure and electronic properties of FeSi2,” Phys. Rev. B Condens. Matter Mater. Phys. 58(16), 10389–10393 (1998).
[Crossref]

1996 (2)

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

1995 (3)

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
[Crossref]

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

H. Nagai, ““Effects of mechanical alloying and grinding on the preparation and thermoelectric properties of β-FeSi2,” Mater. Trans. JIM 36, 365–372 (1995).

1994 (2)

P. Muret, K. Lefki, T. T. A. Nguyen, A. Cola, and I. Ali, “Band discontinuities at beta-FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties,” Semicond. Sci. Technol. 9(7), 1395–1403 (1994).
[Crossref]

T. Miki, Y. Matsui, K. Matsubara, and K. Kishimoto, “Electron paramagnetic resonance of defects in β-iron disilicide ceramics,” J. Appl. Phys. 75(3), 1693–1698 (1994).
[Crossref]

1982 (1)

K. Wünstel and P. Wagner, “Interstitial iron and iron-acceptor pairs in silicon,” Appl. Phys., A Mater. Sci. Process. 27, 207–212 (1982).
[Crossref]

1979 (1)

K. N. Mason, “Growth and characterization of transition metal silicides,” Prog. Crystal Growth Charact. 2, 269–307 (1979).
[Crossref]

1973 (1)

H. Geserich, S. Sharma, and W. Theiner, “Some structural, electrical and optical investigations on a new amorphous material: FeSi2,” Philos. Mag. 27(4), 1001–1007 (1973).
[Crossref]

1968 (1)

U. Birkholz and J. Schelm, “Mechanism of electrical conduction in β-FeSi2,” Phys. Status Solidi, B Basic Res. 27(1), 413–425 (1968).
[Crossref]

Abram, R. A.

S. J. Clark, H. M. Al-Allak, S. Brand, and R. A. Abram, “Structure and electronic properties of FeSi2,” Phys. Rev. B Condens. Matter Mater. Phys. 58(16), 10389–10393 (1998).
[Crossref]

Al-Allak, H. M.

S. J. Clark, H. M. Al-Allak, S. Brand, and R. A. Abram, “Structure and electronic properties of FeSi2,” Phys. Rev. B Condens. Matter Mater. Phys. 58(16), 10389–10393 (1998).
[Crossref]

Ali, I.

P. Muret, K. Lefki, T. T. A. Nguyen, A. Cola, and I. Ali, “Band discontinuities at beta-FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties,” Semicond. Sci. Technol. 9(7), 1395–1403 (1994).
[Crossref]

Angelakeris, M.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Arushanov, E.

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

Birkholz, U.

U. Birkholz and J. Schelm, “Mechanism of electrical conduction in β-FeSi2,” Phys. Status Solidi, B Basic Res. 27(1), 413–425 (1968).
[Crossref]

Borisenko, V. E.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Brand, S.

S. J. Clark, H. M. Al-Allak, S. Brand, and R. A. Abram, “Structure and electronic properties of FeSi2,” Phys. Rev. B Condens. Matter Mater. Phys. 58(16), 10389–10393 (1998).
[Crossref]

Bucher, E.

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

Chen, Y.-C.

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Chen, Z.

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Chu, S.

S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiruma, “Room-temperature 1.56 µm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 11A), L1200–L1202 (2002).
[Crossref]

Clark, S. J.

S. J. Clark, H. M. Al-Allak, S. Brand, and R. A. Abram, “Structure and electronic properties of FeSi2,” Phys. Rev. B Condens. Matter Mater. Phys. 58(16), 10389–10393 (1998).
[Crossref]

Cola, A.

P. Muret, K. Lefki, T. T. A. Nguyen, A. Cola, and I. Ali, “Band discontinuities at beta-FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties,” Semicond. Sci. Technol. 9(7), 1395–1403 (1994).
[Crossref]

Dimitriadis, C.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Dong, L.

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Dorozhkin, N. N.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Elsässer, C.

K. van Benthem, C. Elsässer, and R. H. French, “Bulk electronic structure of SrTiO3: experiment and theory,” J. Appl. Phys. 90(12), 6156–6164 (2001).
[Crossref]

Fernandes, L.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
[Crossref]

Filonov, A. B.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Flevaris, N.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Fortunato, E.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
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K. van Benthem, C. Elsässer, and R. H. French, “Bulk electronic structure of SrTiO3: experiment and theory,” J. Appl. Phys. 90(12), 6156–6164 (2001).
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R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Gao, C.-J.

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Gao, J.

J. H. Hao, J. Gao, and H. K. Wong, “Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications,” Thin Solid Films 515(2), 559–562 (2006).
[Crossref]

Ge, C.

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
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H. Geserich, S. Sharma, and W. Theiner, “Some structural, electrical and optical investigations on a new amorphous material: FeSi2,” Philos. Mag. 27(4), 1001–1007 (1973).
[Crossref]

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H.-U. Habermeier, X. Li, P. Zhang, and B. Leibold, “Anisotropy of thermoelectric properties in La2/3Ca1/3MnO3 thin films studied by laser-induced transient voltages,” Solid State Commun. 110(9), 473–478 (1999).
[Crossref]

Hao, J. H.

J. H. Hao, J. Gao, and H. K. Wong, “Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications,” Thin Solid Films 515(2), 559–562 (2006).
[Crossref]

He, M.

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Henrion, W.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Henry, J.

J. Henry and J. Livingstone, “Optimizing the wavelength response in one-dimensional p-Si Schottky barrier optical PSDs,” Phys. Status Solidi., A Appl. Mater. Sci. 208(7), 1718–1725 (2011).
[Crossref]

Hirohada, T.

S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiruma, “Room-temperature 1.56 µm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 11A), L1200–L1202 (2002).
[Crossref]

Hiruma, T.

S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiruma, “Room-temperature 1.56 µm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 11A), L1200–L1202 (2002).
[Crossref]

Hohl, H.

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

Hoshino, Y.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Hu, C.

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

Huang, Y.

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Ihara, M.

K. Okajima, C. Wen, M. Ihara, I. Sakata, and K. Yamada, “Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition,” Jpn. J. Appl. Phys. 38(Part 1, No. 2A), 781–786 (1999).
[Crossref]

Ikuhara, Y.

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

Izumi, S.

S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Appl. Phys. Lett. 102(3), 032107 (2013).
[Crossref]

M. Shaban, S. Izumi, K. Nomoto, and T. Yoshitake, “n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature,” Appl. Phys. Lett. 95(16), 162102 (2009).
[Crossref]

M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake, “Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature,” Appl. Phys. Lett. 94(22), 222113 (2009).
[Crossref]

Jin, K.

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Kan, H.

S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiruma, “Room-temperature 1.56 µm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 11A), L1200–L1202 (2002).
[Crossref]

Kang, S.-J.

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

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J. Tani and H. Kido, “First-principle study of native point defects in β-FeSi2,” J. Alloys Compd. 352(1-2), 153–157 (2003).
[Crossref]

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D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Kishimoto, K.

T. Miki, Y. Matsui, K. Matsubara, and K. Kishimoto, “Electron paramagnetic resonance of defects in β-iron disilicide ceramics,” J. Appl. Phys. 75(3), 1693–1698 (1994).
[Crossref]

Kloc, C.

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

Kobayashi, K.

T. Sunohara, K. Kobayashi, and T. Suemasu, “Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,” Thin Solid Films 508(1-2), 371–375 (2006).
[Crossref]

Kong, Y. C.

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

Kuroda, R.

Z. Liu, M. Tanaka, R. Kuroda, M. Osamura, and Y. Makita, “Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate,” Appl. Phys. Lett. 93(2), 021907 (2008).
[Crossref]

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Lange, H.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Lavareda, G.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
[Crossref]

Lee, H.-S.

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

Lefki, K.

P. Muret, K. Lefki, T. T. A. Nguyen, A. Cola, and I. Ali, “Band discontinuities at beta-FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties,” Semicond. Sci. Technol. 9(7), 1395–1403 (1994).
[Crossref]

Leibold, B.

H.-U. Habermeier, X. Li, P. Zhang, and B. Leibold, “Anisotropy of thermoelectric properties in La2/3Ca1/3MnO3 thin films studied by laser-induced transient voltages,” Solid State Commun. 110(9), 473–478 (1999).
[Crossref]

Li, X.

H.-U. Habermeier, X. Li, P. Zhang, and B. Leibold, “Anisotropy of thermoelectric properties in La2/3Ca1/3MnO3 thin films studied by laser-induced transient voltages,” Solid State Commun. 110(9), 473–478 (1999).
[Crossref]

Li, X.-J.

Y. Li, Z.-F. Shi, X.-J. Li, and C.-X. Shan, “Photodetectors based on inorganic halide perovskites: aterials and devices,” Chin. Phys. B 28(1), 017803 (2019).
[Crossref]

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Y. Li, Z.-F. Shi, X.-J. Li, and C.-X. Shan, “Photodetectors based on inorganic halide perovskites: aterials and devices,” Chin. Phys. B 28(1), 017803 (2019).
[Crossref]

Liao, L.

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

Lin, C.-N.

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Liu, Z.

Z. Liu, M. Tanaka, R. Kuroda, M. Osamura, and Y. Makita, “Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate,” Appl. Phys. Lett. 93(2), 021907 (2008).
[Crossref]

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Livingstone, J.

J. Henry and J. Livingstone, “Optimizing the wavelength response in one-dimensional p-Si Schottky barrier optical PSDs,” Phys. Status Solidi., A Appl. Mater. Sci. 208(7), 1718–1725 (2011).
[Crossref]

Lu, H.

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Lu, J.

Lu, Y.-J.

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Ma, X.

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Makita, Y.

Z. Liu, M. Tanaka, R. Kuroda, M. Osamura, and Y. Makita, “Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate,” Appl. Phys. Lett. 93(2), 021907 (2008).
[Crossref]

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Malang, U.

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

Martins, R.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
[Crossref]

Mason, K. N.

K. N. Mason, “Growth and characterization of transition metal silicides,” Prog. Crystal Growth Charact. 2, 269–307 (1979).
[Crossref]

Matsubara, K.

T. Miki, Y. Matsui, K. Matsubara, and K. Kishimoto, “Electron paramagnetic resonance of defects in β-iron disilicide ceramics,” J. Appl. Phys. 75(3), 1693–1698 (1994).
[Crossref]

Matsui, Y.

T. Miki, Y. Matsui, K. Matsubara, and K. Kishimoto, “Electron paramagnetic resonance of defects in β-iron disilicide ceramics,” J. Appl. Phys. 75(3), 1693–1698 (1994).
[Crossref]

Migas, D. B.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Miki, T.

T. Miki, Y. Matsui, K. Matsubara, and K. Kishimoto, “Electron paramagnetic resonance of defects in β-iron disilicide ceramics,” J. Appl. Phys. 75(3), 1693–1698 (1994).
[Crossref]

Mise, T.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Mistui, J.

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

Mitsas, C.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Mizoguchi, T.

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

Muret, P.

P. Muret, K. Lefki, T. T. A. Nguyen, A. Cola, and I. Ali, “Band discontinuities at beta-FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties,” Semicond. Sci. Technol. 9(7), 1395–1403 (1994).
[Crossref]

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H. Nagai, ““Effects of mechanical alloying and grinding on the preparation and thermoelectric properties of β-FeSi2,” Mater. Trans. JIM 36, 365–372 (1995).

Nakajima, K.

S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiruma, “Room-temperature 1.56 µm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 11A), L1200–L1202 (2002).
[Crossref]

Nakashima, K.

M. Shaban, K. Nakashima, and T. Yoshitake, “Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering,” Jpn. J. Appl. Phys. 46(12), 7708–7710 (2007).
[Crossref]

Nakayama, Y.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Nguyen, T. T. A.

P. Muret, K. Lefki, T. T. A. Nguyen, A. Cola, and I. Ali, “Band discontinuities at beta-FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties,” Semicond. Sci. Technol. 9(7), 1395–1403 (1994).
[Crossref]

Ni, H.

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

Ni, Z.

Nomoto, K.

S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Appl. Phys. Lett. 102(3), 032107 (2013).
[Crossref]

M. Shaban, S. Izumi, K. Nomoto, and T. Yoshitake, “n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature,” Appl. Phys. Lett. 95(16), 162102 (2009).
[Crossref]

M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake, “Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature,” Appl. Phys. Lett. 94(22), 222113 (2009).
[Crossref]

Okajima, K.

K. Okajima, C. Wen, M. Ihara, I. Sakata, and K. Yamada, “Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition,” Jpn. J. Appl. Phys. 38(Part 1, No. 2A), 781–786 (1999).
[Crossref]

Ootsuka, T.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Osamura, M.

Z. Liu, M. Tanaka, R. Kuroda, M. Osamura, and Y. Makita, “Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate,” Appl. Phys. Lett. 93(2), 021907 (2008).
[Crossref]

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Otogawa, N.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Petrov, G. V.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Poulopoulos, P.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Promros, N.

S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Appl. Phys. Lett. 102(3), 032107 (2013).
[Crossref]

Qin, H.

Rosencher, E.

E. Rosencher and B. Vinter, Optoelectronics (Cambridge University, 2002).

Sakata, I.

K. Okajima, C. Wen, M. Ihara, I. Sakata, and K. Yamada, “Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition,” Jpn. J. Appl. Phys. 38(Part 1, No. 2A), 781–786 (1999).
[Crossref]

Schelm, J.

U. Birkholz and J. Schelm, “Mechanism of electrical conduction in β-FeSi2,” Phys. Status Solidi, B Basic Res. 27(1), 413–425 (1968).
[Crossref]

Shaban, M.

S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Appl. Phys. Lett. 102(3), 032107 (2013).
[Crossref]

M. Shaban, S. Izumi, K. Nomoto, and T. Yoshitake, “n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature,” Appl. Phys. Lett. 95(16), 162102 (2009).
[Crossref]

M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake, “Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature,” Appl. Phys. Lett. 94(22), 222113 (2009).
[Crossref]

M. Shaban, K. Nakashima, and T. Yoshitake, “Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering,” Jpn. J. Appl. Phys. 46(12), 7708–7710 (2007).
[Crossref]

Shan, C.-X.

Y. Li, Z.-F. Shi, X.-J. Li, and C.-X. Shan, “Photodetectors based on inorganic halide perovskites: aterials and devices,” Chin. Phys. B 28(1), 017803 (2019).
[Crossref]

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Shaposhnikov, V. L.

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

Sharma, S.

H. Geserich, S. Sharma, and W. Theiner, “Some structural, electrical and optical investigations on a new amorphous material: FeSi2,” Philos. Mag. 27(4), 1001–1007 (1973).
[Crossref]

Shi, Z.-F.

Y. Li, Z.-F. Shi, X.-J. Li, and C.-X. Shan, “Photodetectors based on inorganic halide perovskites: aterials and devices,” Chin. Phys. B 28(1), 017803 (2019).
[Crossref]

Siapkas, D.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Soares, F.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
[Crossref]

Suemasu, T.

T. Sunohara, K. Kobayashi, and T. Suemasu, “Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,” Thin Solid Films 508(1-2), 371–375 (2006).
[Crossref]

Sunohara, T.

T. Sunohara, K. Kobayashi, and T. Suemasu, “Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,” Thin Solid Films 508(1-2), 371–375 (2006).
[Crossref]

Suzuki, Y.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Tanaka, M.

Z. Liu, M. Tanaka, R. Kuroda, M. Osamura, and Y. Makita, “Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate,” Appl. Phys. Lett. 93(2), 021907 (2008).
[Crossref]

Tani, J.

J. Tani and H. Kido, “First-principle study of native point defects in β-FeSi2,” J. Alloys Compd. 352(1-2), 153–157 (2003).
[Crossref]

Tanoue, H.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Tassis, D.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Theiner, W.

H. Geserich, S. Sharma, and W. Theiner, “Some structural, electrical and optical investigations on a new amorphous material: FeSi2,” Philos. Mag. 27(4), 1001–1007 (1973).
[Crossref]

Tian, Y.-Z.

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Valassiades, O.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

van Benthem, K.

K. van Benthem, C. Elsässer, and R. H. French, “Bulk electronic structure of SrTiO3: experiment and theory,” J. Appl. Phys. 90(12), 6156–6164 (2001).
[Crossref]

Vinter, B.

E. Rosencher and B. Vinter, Optoelectronics (Cambridge University, 2002).

Wagner, P.

K. Wünstel and P. Wagner, “Interstitial iron and iron-acceptor pairs in silicon,” Appl. Phys., A Mater. Sci. Process. 27, 207–212 (1982).
[Crossref]

Wang, C.

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

Wang, J.

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

Wang, S.

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

Wang, W.

Wen, C.

K. Okajima, C. Wen, M. Ihara, I. Sakata, and K. Yamada, “Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition,” Jpn. J. Appl. Phys. 38(Part 1, No. 2A), 781–786 (1999).
[Crossref]

Wendl, M.

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

Wong, H. K.

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

J. H. Hao, J. Gao, and H. K. Wong, “Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications,” Thin Solid Films 515(2), 559–562 (2006).
[Crossref]

Wünstel, K.

K. Wünstel and P. Wagner, “Interstitial iron and iron-acceptor pairs in silicon,” Appl. Phys., A Mater. Sci. Process. 27, 207–212 (1982).
[Crossref]

Yamada, K.

K. Okajima, C. Wen, M. Ihara, I. Sakata, and K. Yamada, “Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition,” Jpn. J. Appl. Phys. 38(Part 1, No. 2A), 781–786 (1999).
[Crossref]

Yamamoto, T.

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

Yan, Z.

Yang, G.

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Yoshitake, T.

S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Appl. Phys. Lett. 102(3), 032107 (2013).
[Crossref]

M. Shaban, S. Izumi, K. Nomoto, and T. Yoshitake, “n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature,” Appl. Phys. Lett. 95(16), 162102 (2009).
[Crossref]

M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake, “Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature,” Appl. Phys. Lett. 94(22), 222113 (2009).
[Crossref]

M. Shaban, K. Nakashima, and T. Yoshitake, “Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering,” Jpn. J. Appl. Phys. 46(12), 7708–7710 (2007).
[Crossref]

Zhang, J.

Zhang, L.

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

Zhang, P.

H.-U. Habermeier, X. Li, P. Zhang, and B. Leibold, “Anisotropy of thermoelectric properties in La2/3Ca1/3MnO3 thin films studied by laser-induced transient voltages,” Solid State Commun. 110(9), 473–478 (1999).
[Crossref]

Zhao, G.

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

Zhao, K.

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Zhong, S. X.

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

Zhou, Y.

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Zorba, T.

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

Appl. Phys. Lett. (5)

S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Appl. Phys. Lett. 102(3), 032107 (2013).
[Crossref]

M. Shaban, S. Izumi, K. Nomoto, and T. Yoshitake, “n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature,” Appl. Phys. Lett. 95(16), 162102 (2009).
[Crossref]

M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake, “Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature,” Appl. Phys. Lett. 94(22), 222113 (2009).
[Crossref]

Z. Liu, M. Tanaka, R. Kuroda, M. Osamura, and Y. Makita, “Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate,” Appl. Phys. Lett. 93(2), 021907 (2008).
[Crossref]

L. Liao, K. Jin, C. Ge, C. Hu, H. Lu, and G. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

Appl. Phys., A Mater. Sci. Process. (1)

K. Wünstel and P. Wagner, “Interstitial iron and iron-acceptor pairs in silicon,” Appl. Phys., A Mater. Sci. Process. 27, 207–212 (1982).
[Crossref]

Chin. Phys. B (1)

Y. Li, Z.-F. Shi, X.-J. Li, and C.-X. Shan, “Photodetectors based on inorganic halide perovskites: aterials and devices,” Chin. Phys. B 28(1), 017803 (2019).
[Crossref]

Eur. Phys. J. Appl. Phys. (1)

K. Zhao, H. Lu, M. He, Y. Huang, K. Jin, Z. Chen, Y. Zhou, G. Yang, and X. Ma, “Anomalous photovoltaic effect in Las0.8Sr0.2MnO3 films grown on SrTiO3(001) substrates by laser molecular beam epitaxy,” Eur. Phys. J. Appl. Phys. 35(3), 173–176 (2006).
[Crossref]

Int. J. Photoenergy (1)

J. Wang, H. Ni, K. Zhao, Y. C. Kong, H. K. Wong, and S. X. Zhong, “Polarity switchable photovoltages in miscut La0.67Ca0.33MnO3 films,” Int. J. Photoenergy 2012, 1–5 (2012).

J. Alloys Compd. (2)

C. Kloc, E. Arushanov, M. Wendl, H. Hohl, U. Malang, and E. Bucher, “Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals,” J. Alloys Compd. 219(1-2), 93–96 (1995).
[Crossref]

J. Tani and H. Kido, “First-principle study of native point defects in β-FeSi2,” J. Alloys Compd. 352(1-2), 153–157 (2003).
[Crossref]

J. Appl. Phys. (4)

T. Miki, Y. Matsui, K. Matsubara, and K. Kishimoto, “Electron paramagnetic resonance of defects in β-iron disilicide ceramics,” J. Appl. Phys. 75(3), 1693–1698 (1994).
[Crossref]

D. Tassis, C. Mitsas, T. Zorba, C. Dimitriadis, O. Valassiades, D. Siapkas, M. Angelakeris, P. Poulopoulos, N. Flevaris, and G. Kiriakidis, “Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films,” J. Appl. Phys. 80(2), 962–968 (1996).
[Crossref]

K. van Benthem, C. Elsässer, and R. H. French, “Bulk electronic structure of SrTiO3: experiment and theory,” J. Appl. Phys. 90(12), 6156–6164 (2001).
[Crossref]

A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, and H. Lange, “Electronic and related properties of crystalline semiconducting iron disilicide,” J. Appl. Phys. 79(10), 7708–7712 (1996).
[Crossref]

J. Mater. Chem. C Mater. Opt. Electron. Devices (1)

Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Jpn. J. Appl. Phys. (3)

S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiruma, “Room-temperature 1.56 µm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 11A), L1200–L1202 (2002).
[Crossref]

K. Okajima, C. Wen, M. Ihara, I. Sakata, and K. Yamada, “Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition,” Jpn. J. Appl. Phys. 38(Part 1, No. 2A), 781–786 (1999).
[Crossref]

M. Shaban, K. Nakashima, and T. Yoshitake, “Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering,” Jpn. J. Appl. Phys. 46(12), 7708–7710 (2007).
[Crossref]

Mater. Trans. JIM (1)

H. Nagai, ““Effects of mechanical alloying and grinding on the preparation and thermoelectric properties of β-FeSi2,” Mater. Trans. JIM 36, 365–372 (1995).

Optica (1)

Philos. Mag. (1)

H. Geserich, S. Sharma, and W. Theiner, “Some structural, electrical and optical investigations on a new amorphous material: FeSi2,” Philos. Mag. 27(4), 1001–1007 (1973).
[Crossref]

Phys. Rev. B Condens. Matter Mater. Phys. (2)

S. J. Clark, H. M. Al-Allak, S. Brand, and R. A. Abram, “Structure and electronic properties of FeSi2,” Phys. Rev. B Condens. Matter Mater. Phys. 58(16), 10389–10393 (1998).
[Crossref]

H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. Kang, and Y. Ikuhara, “Defect energetics in SrTiO3 symmetric tilt grain boundaries,” Phys. Rev. B Condens. Matter Mater. Phys. 83(10), 104110 (2011).
[Crossref]

Phys. Status Solidi, B Basic Res. (1)

U. Birkholz and J. Schelm, “Mechanism of electrical conduction in β-FeSi2,” Phys. Status Solidi, B Basic Res. 27(1), 413–425 (1968).
[Crossref]

Phys. Status Solidi., A Appl. Mater. Sci. (1)

J. Henry and J. Livingstone, “Optimizing the wavelength response in one-dimensional p-Si Schottky barrier optical PSDs,” Phys. Status Solidi., A Appl. Mater. Sci. 208(7), 1718–1725 (2011).
[Crossref]

Prog. Crystal Growth Charact. (1)

K. N. Mason, “Growth and characterization of transition metal silicides,” Prog. Crystal Growth Charact. 2, 269–307 (1979).
[Crossref]

Semicond. Sci. Technol. (1)

P. Muret, K. Lefki, T. T. A. Nguyen, A. Cola, and I. Ali, “Band discontinuities at beta-FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties,” Semicond. Sci. Technol. 9(7), 1395–1403 (1994).
[Crossref]

Sens. Actuators A Phys. (1)

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2-3), 135–142 (1995).
[Crossref]

Solid State Commun. (2)

C. Ge, K. Jin, H. Lu, C. Wang, G. Zhao, L. Zhang, and G. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150(43-44), 2114–2117 (2010).
[Crossref]

H.-U. Habermeier, X. Li, P. Zhang, and B. Leibold, “Anisotropy of thermoelectric properties in La2/3Ca1/3MnO3 thin films studied by laser-induced transient voltages,” Solid State Commun. 110(9), 473–478 (1999).
[Crossref]

Thin Solid Films (3)

J. H. Hao, J. Gao, and H. K. Wong, “Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications,” Thin Solid Films 515(2), 559–562 (2006).
[Crossref]

R. Kuroda, Z. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita, “Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrate,” Thin Solid Films 461(1), 34–39 (2004).
[Crossref]

T. Sunohara, K. Kobayashi, and T. Suemasu, “Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,” Thin Solid Films 508(1-2), 371–375 (2006).
[Crossref]

Other (2)

V. V. Balashev, V. A. Vikulov, T. A. Pisarenko, and V. V. Korobtsov, “RHEED study of the texture in polycrystalline films of magnetite grown on oxidized silicon surface,” in Solid State Phenomena, (Trans Tech Publications 2016), pp. 118–123.

E. Rosencher and B. Vinter, Optoelectronics (Cambridge University, 2002).

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Figures (5)

Fig. 1
Fig. 1 Schematic of lateral photovoltaic effect measurement setup. The surface of β-FeSi2 thin films was equally zoning for laser illumination and marked with x-axis position.
Fig. 2
Fig. 2 RHEED images of films deposited with (a) 0 pulse, (b) 300 pulses and (c) 2000 pulses; XRD patterns of β-FeSi2 films deposited on SrTiO3 (001) substrate (d); SEM images of (e) SrTiO3 substrate and (f, g) β-FeSi2 films on SrTiO3 substrate.
Fig. 3
Fig. 3 Current-voltage (a) and resistance-temperature (b, c) characteristics of β-FeSi2 films under dark (black square) and illumination of 1064 nm (blue sphere) and 808 nm (red circle) stable laser.
Fig. 4
Fig. 4 Lateral photovoltaic signals of β-FeSi2 films under illumination of 808 nm (a1, a2) and 1064 nm (b1, b2) stable laser. (a1) and (b1) are the power dependence of photovoltage at incident position “-0.8mm”; (a2) and (b2) are the position dependence of photovoltage at light power intensity of 45 mW/mm2.
Fig. 5
Fig. 5 Position-sensitive characteristics of β-FeSi2 films under illumination of 808 nm and 1064 nm-stable laser (a). The photovoltage as a function of incident light power at the position of 0.8 mm away from the electrode (b). The infrared-photovoltaic response time of β-FeSi2 films (c).

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

1 ρ =σ=nμq
n= ( N V N d ) 1 2 e E a 2kT
lnρ= E a 2kT ( lnq+ 1 2 ln N V N d 2 +lnμ )
R sheet = ρ d
δ= 2 L i=1 N ( X i X i F ) 2 N

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