Abstract

The power spectral density of the instantaneous oscillation frequency of single-mode semiconductor lasers under the influence of an external optical driving signal is directly measured for the first time to our knowledge. The experimental results show how the frequency noise of the slave is influenced by the value of the injected power and by the difference between the emission frequencies of the master and slave optical cavities and how it is correlated to the noise properties of both the master and the free-running slave.

© 1985 Optical Society of America

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