Abstract

An experimental comparison is made between the losses of S bends fabricated by impurity-induced layer disordering in GaAs–AlAs superlattices. For parallel waveguides offset by 100 μm, transition lengths corresponding to 3-dB excess loss were found to be ≈290 μm for approximately single-mode S bends in the form of a raised cosine and ≈335 μm for bends in the form of two constant-radius-of-curvature sections. These buried-channel bends appear to have losses that compare favorably with those formed from rib waveguides.

© 1988 Optical Society of America

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