Hybrid III–V/silicon single-mode laser with periodic microstructures

Abstract

In this Letter, a III–V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III–V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. Over 10,000 h lifetime can be reached.

© 2013 Optical Society of America

A hybrid silicon single mode laser with a slotted feedback structure

Yejin Zhang, Hongwei Qu, Hailing Wang, Siriguleng Zhang, Lei Liu, Shaodong Ma, and Wanhua Zheng
Opt. Express 21(1) 877-883 (2013)

Inclined emitting slotted single-mode laser with 1.7° vertical divergence angle for PIC applications

Yejin Zhang, Yanmei Su, Yu Bi, Jiaoqing Pan, Hongyan Yu, Yang Zhang, Jie Sun, Xiuyan Sun, and Ming Chong
Opt. Lett. 43(1) 86-89 (2018)

Electrically pumped hybrid AlGaInAs-silicon evanescent laser

Alexander W. Fang, Hyundai Park, Oded Cohen, Richard Jones, Mario J. Paniccia, and John E. Bowers
Opt. Express 14(20) 9203-9210 (2006)

Hybrid III–V/silicon laser with laterally coupled Bragg grating

Yu-Lian Cao, Xiao-Nan Hu, Xian-Shu Luo, Jun-Feng Song, Yuanbing Cheng, Cheng-Ming Li, Chong-Yang Liu, Hong Wang, Liow Tsung-Yang, Guo-Qiang Lo, and QiJie Wang
Opt. Express 23(7) 8800-8808 (2015)

4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width

Li Tao, Lijun Yuan, Yanping Li, Hongyan Yu, Baojun Wang, Qiang Kan, Weixi Chen, Jiaoqing Pan, Guangzhao Ran, and Wei Wang
Opt. Express 22(5) 5448-5454 (2014)