Abstract

Ultrafast electro-optical conversion at nanoscale is of fundamental interest for information transfer and optical interconnects. Light emission from a quantum tunnel junction provides an opportunity owing to its unique capability of ultrafast response and small footprint. However, the main challenge to the wide adoption of the tunnel junction is its low emission efficiency caused by the low inelastic electron tunneling proportion and radiation efficiency. In this Letter, an electrically driven silicon light source with its efficiency enhanced by using a nano-antenna in a metal–insulator–semiconductor junction is proposed. Strong plasmon confinement in the nano-antenna provides large local density of optical states and bridges the wave vector mismatch between nanoscale volume field confinement and far-field radiation. Two orders of magnitude of emission enhancement are achieved over typical planar MIS junctions.

© 2019 Optical Society of America

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