Abstract

The formation of large scale, highly uniform and controllable GaN microdome arrays based on a self-assembled low cost method was investigated. The deposition of a large area, hexagonally close-packed SiO2 microsphere monolayer on top of the III-nitride semiconductor using the dip-coating method was optimized, which leads to surface coverage of 87% of SiO2 on GaN (ideal close-packed microsphere surface coverage is 90.7%). Reactive ion etching was used to simultaneously etch both SiO2 microspheres and GaN substrate to form GaN microdomes. Experiments show that GaN microdomes with controllable size, shape, and aspect ratio are achievable through controlling the plasma etching conditions.

©2013 Optical Society of America

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    [Crossref]
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  4. M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
    [Crossref]
  5. D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref] [PubMed]
  24. R. G. Shimmin, A. J. DiMauro, and P. V. Braun, “Slow vertical deposition of colloidal Crystals: a Langmuir-Blodgett process?” Langmuir 22(15), 6507–6513 (2006).
    [Crossref] [PubMed]
  25. A. S. Dimitrov and K. Nagayama, “Continuous convective assembling of fine particles into two-dimensional arrays on solid surfaces,” Langmuir 12(5), 1303–1311 (1996).
    [Crossref]
  26. C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
    [Crossref]
  27. W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
    [Crossref]
  28. J. C. Hulteen and R. P. Vanduyne, “Nanosphere lithography: A materials general fabrication process for periodic particle array surfaces,” J. Vac. Sci. Technol. A 13(3), 1553–1558 (1995).
    [Crossref]
  29. C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
    [Crossref]

2013 (1)

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes with Microsphere Arrays,” Journal of Display Technology 9(5), 317–323 (2013).
[Crossref]

2012 (3)

2011 (1)

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

2010 (1)

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

2009 (5)

W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
[Crossref]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[Crossref] [PubMed]

J. Liu, J. Limb, Z. Lochner, D. Yoo, J.-H. Ryou, and R. D. Dupuis, “Green light-emitting diodes with pInGaN:Mg grown on C-plane sapphire and GaN substrates,” Phys. Status Solidi., A Appl. Mater. Sci. 206(4), 750–753 (2009).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94(6), 063505 (2009).
[Crossref]

2008 (2)

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays,” Langmuir 24(21), 12150–12157 (2008).
[Crossref] [PubMed]

2007 (2)

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using sio2 / polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

2006 (2)

R. G. Shimmin, A. J. DiMauro, and P. V. Braun, “Slow vertical deposition of colloidal Crystals: a Langmuir-Blodgett process?” Langmuir 22(15), 6507–6513 (2006).
[Crossref] [PubMed]

P. L. Biancaniello and J. C. Crocker, “Line optical tweezers instrument for measuring nanoscale interactions and kinetics,” Rev. Sci. Instrum. 77(11), 113702 (2006).
[Crossref]

2005 (2)

J. J. Diao, J. B. Hutchison, G. Luo, and M. E. Reeves, “Theoretical analysis of vertical colloidal deposition,” J. Chem. Phys. 122(18), 184710 (2005).
[Crossref] [PubMed]

P. Jiang and M. J. McFarland, “Wafer-scale periodic nanohole arrays templated from two-dimensional nonclose-packed colloidal crystals,” J. Am. Chem. Soc. 127(11), 3710–3711 (2005).
[Crossref] [PubMed]

2004 (1)

W. Lee, A. Chan, M. A. Bevan, J. A. Lewis, and P. V. Braun, “Nanoparticle-mediated epitaxial assembly of colloidal crystals on patterned substrates,” Langmuir 20(13), 5262–5270 (2004).
[Crossref] [PubMed]

2003 (1)

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
[Crossref]

2002 (1)

J. Han and A. V. Nurmikko, “Advances in AlGaInN blue and ultraviolet light emitters,” IEEE J. Sel. Top. Quantum Electron. 8(2), 289–297 (2002).
[Crossref]

2000 (2)

R. C. Bailey, K. J. Stevenson, and J. T. Hupp, “Assembly of micropatterned colloidal gold thin films via microtransfer molding and electrophoretic deposition,” Adv. Mater. 12(24), 1930–1934 (2000).
[Crossref]

R. C. Hayward, D. A. Saville, and I. A. Aksay, “Electrophoretic assembly of colloidal crystals with optically tunable micropatterns,” Nature 404(6773), 56–59 (2000).
[Crossref] [PubMed]

1996 (3)

A. S. Dimitrov and K. Nagayama, “Continuous convective assembling of fine particles into two-dimensional arrays on solid surfaces,” Langmuir 12(5), 1303–1311 (1996).
[Crossref]

A. S. Dimitrov and K. Nagayama, “Continuous convective assembling of fine particles into two-dimensional arrays on solid surfaces,” Langmuir 12(5), 1303–1311 (1996).
[Crossref]

C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
[Crossref]

1995 (2)

J. C. Hulteen and R. P. Vanduyne, “Nanosphere lithography: A materials general fabrication process for periodic particle array surfaces,” J. Vac. Sci. Technol. A 13(3), 1553–1558 (1995).
[Crossref]

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys. 34(Part 2, No. 10B), L1332–L1335 (1995).
[Crossref]

Abernathy, C. R.

C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
[Crossref]

Aksay, I. A.

R. C. Hayward, D. A. Saville, and I. A. Aksay, “Electrophoretic assembly of colloidal crystals with optically tunable micropatterns,” Nature 404(6773), 56–59 (2000).
[Crossref] [PubMed]

Arif, R. A.

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[Crossref] [PubMed]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using sio2 / polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007).
[Crossref]

Avramescu, A.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Bailey, R. C.

R. C. Bailey, K. J. Stevenson, and J. T. Hupp, “Assembly of micropatterned colloidal gold thin films via microtransfer molding and electrophoretic deposition,” Adv. Mater. 12(24), 1930–1934 (2000).
[Crossref]

Bevan, M. A.

W. Lee, A. Chan, M. A. Bevan, J. A. Lewis, and P. V. Braun, “Nanoparticle-mediated epitaxial assembly of colloidal crystals on patterned substrates,” Langmuir 20(13), 5262–5270 (2004).
[Crossref] [PubMed]

Biancaniello, P. L.

P. L. Biancaniello and J. C. Crocker, “Line optical tweezers instrument for measuring nanoscale interactions and kinetics,” Rev. Sci. Instrum. 77(11), 113702 (2006).
[Crossref]

Braun, P. V.

R. G. Shimmin, A. J. DiMauro, and P. V. Braun, “Slow vertical deposition of colloidal Crystals: a Langmuir-Blodgett process?” Langmuir 22(15), 6507–6513 (2006).
[Crossref] [PubMed]

W. Lee, A. Chan, M. A. Bevan, J. A. Lewis, and P. V. Braun, “Nanoparticle-mediated epitaxial assembly of colloidal crystals on patterned substrates,” Langmuir 20(13), 5262–5270 (2004).
[Crossref] [PubMed]

Breidenassel, A.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Brüderl, G.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Cai, D.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Chan, A.

W. Lee, A. Chan, M. A. Bevan, J. A. Lewis, and P. V. Braun, “Nanoparticle-mediated epitaxial assembly of colloidal crystals on patterned substrates,” Langmuir 20(13), 5262–5270 (2004).
[Crossref] [PubMed]

Chan, C.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Chen, C.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Chien, H.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Choi, H. W.

W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
[Crossref]

Crocker, J. C.

P. L. Biancaniello and J. C. Crocker, “Line optical tweezers instrument for measuring nanoscale interactions and kinetics,” Rev. Sci. Instrum. 77(11), 113702 (2006).
[Crossref]

Cruz, S. C.

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Dahal, R.

R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94(6), 063505 (2009).
[Crossref]

DenBaars, S. P.

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Diao, J. J.

J. J. Diao, J. B. Hutchison, G. Luo, and M. E. Reeves, “Theoretical analysis of vertical colloidal deposition,” J. Chem. Phys. 122(18), 184710 (2005).
[Crossref] [PubMed]

DiMauro, A. J.

R. G. Shimmin, A. J. DiMauro, and P. V. Braun, “Slow vertical deposition of colloidal Crystals: a Langmuir-Blodgett process?” Langmuir 22(15), 6507–6513 (2006).
[Crossref] [PubMed]

Dimitrov, A. S.

A. S. Dimitrov and K. Nagayama, “Continuous convective assembling of fine particles into two-dimensional arrays on solid surfaces,” Langmuir 12(5), 1303–1311 (1996).
[Crossref]

A. S. Dimitrov and K. Nagayama, “Continuous convective assembling of fine particles into two-dimensional arrays on solid surfaces,” Langmuir 12(5), 1303–1311 (1996).
[Crossref]

Dupuis, R. D.

J. Liu, J. Limb, Z. Lochner, D. Yoo, J.-H. Ryou, and R. D. Dupuis, “Green light-emitting diodes with pInGaN:Mg grown on C-plane sapphire and GaN substrates,” Phys. Status Solidi., A Appl. Mater. Sci. 206(4), 750–753 (2009).
[Crossref]

Ee, Y. K.

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[Crossref] [PubMed]

P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays,” Langmuir 24(21), 12150–12157 (2008).
[Crossref] [PubMed]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using sio2 / polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007).
[Crossref]

Ferguson, I.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Fischer, A.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Fu, W. Y.

W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
[Crossref]

Gil, A.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Gilchrist, J. F.

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[Crossref] [PubMed]

P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays,” Langmuir 24(21), 12150–12157 (2008).
[Crossref] [PubMed]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using sio2 / polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007).
[Crossref]

Han, J.

J. Han and A. V. Nurmikko, “Advances in AlGaInN blue and ultraviolet light emitters,” IEEE J. Sel. Top. Quantum Electron. 8(2), 289–297 (2002).
[Crossref]

Han, L.

Hayward, R. C.

R. C. Hayward, D. A. Saville, and I. A. Aksay, “Electrophoretic assembly of colloidal crystals with optically tunable micropatterns,” Nature 404(6773), 56–59 (2000).
[Crossref] [PubMed]

He, J. H.

C. H. Ho, K. Y. Lai, C. A. Lin, G. J. Lin, M. K. Hsing, and J. H. He, “Microdome InGaN-based multiple quantum well solar cells,” Appl. Phys. Lett. 101(2), 023902 (2012).
[Crossref]

Ho, C. H.

C. H. Ho, K. Y. Lai, C. A. Lin, G. J. Lin, M. K. Hsing, and J. H. He, “Microdome InGaN-based multiple quantum well solar cells,” Appl. Phys. Lett. 101(2), 023902 (2012).
[Crossref]

Honsberg, C.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Hou, C.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Hsing, M. K.

C. H. Ho, K. Y. Lai, C. A. Lin, G. J. Lin, M. K. Hsing, and J. H. He, “Microdome InGaN-based multiple quantum well solar cells,” Appl. Phys. Lett. 101(2), 023902 (2012).
[Crossref]

Hsu, K.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Hulteen, J. C.

J. C. Hulteen and R. P. Vanduyne, “Nanosphere lithography: A materials general fabrication process for periodic particle array surfaces,” J. Vac. Sci. Technol. A 13(3), 1553–1558 (1995).
[Crossref]

Hupp, J. T.

R. C. Bailey, K. J. Stevenson, and J. T. Hupp, “Assembly of micropatterned colloidal gold thin films via microtransfer molding and electrophoretic deposition,” Adv. Mater. 12(24), 1930–1934 (2000).
[Crossref]

Hutchison, J. B.

J. J. Diao, J. B. Hutchison, G. Luo, and M. E. Reeves, “Theoretical analysis of vertical colloidal deposition,” J. Chem. Phys. 122(18), 184710 (2005).
[Crossref] [PubMed]

Iwasa, N.

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys. 34(Part 2, No. 10B), L1332–L1335 (1995).
[Crossref]

Iza, M.

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Jani, O.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Jiang, H. X.

R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94(6), 063505 (2009).
[Crossref]

Jiang, P.

P. Jiang and M. J. McFarland, “Wafer-scale periodic nanohole arrays templated from two-dimensional nonclose-packed colloidal crystals,” J. Am. Chem. Soc. 127(11), 3710–3711 (2005).
[Crossref] [PubMed]

Johnson, N. M.

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
[Crossref]

Kneissl, M.

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
[Crossref]

Kumnorkaew, P.

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[Crossref] [PubMed]

P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays,” Langmuir 24(21), 12150–12157 (2008).
[Crossref] [PubMed]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using sio2 / polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007).
[Crossref]

Kurtz, S.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Lai, K. Y.

C. H. Ho, K. Y. Lai, C. A. Lin, G. J. Lin, M. K. Hsing, and J. H. He, “Microdome InGaN-based multiple quantum well solar cells,” Appl. Phys. Lett. 101(2), 023902 (2012).
[Crossref]

Lee, C.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Lee, J. W.

C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
[Crossref]

Lee, W.

W. Lee, A. Chan, M. A. Bevan, J. A. Lewis, and P. V. Braun, “Nanoparticle-mediated epitaxial assembly of colloidal crystals on patterned substrates,” Langmuir 20(13), 5262–5270 (2004).
[Crossref] [PubMed]

Lewis, J. A.

W. Lee, A. Chan, M. A. Bevan, J. A. Lewis, and P. V. Braun, “Nanoparticle-mediated epitaxial assembly of colloidal crystals on patterned substrates,” Langmuir 20(13), 5262–5270 (2004).
[Crossref] [PubMed]

Li, J.

R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94(6), 063505 (2009).
[Crossref]

Li, X. H.

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

Limb, J.

J. Liu, J. Limb, Z. Lochner, D. Yoo, J.-H. Ryou, and R. D. Dupuis, “Green light-emitting diodes with pInGaN:Mg grown on C-plane sapphire and GaN substrates,” Phys. Status Solidi., A Appl. Mater. Sci. 206(4), 750–753 (2009).
[Crossref]

Lin, C. A.

C. H. Ho, K. Y. Lai, C. A. Lin, G. J. Lin, M. K. Hsing, and J. H. He, “Microdome InGaN-based multiple quantum well solar cells,” Appl. Phys. Lett. 101(2), 023902 (2012).
[Crossref]

Lin, G. J.

C. H. Ho, K. Y. Lai, C. A. Lin, G. J. Lin, M. K. Hsing, and J. H. He, “Microdome InGaN-based multiple quantum well solar cells,” Appl. Phys. Lett. 101(2), 023902 (2012).
[Crossref]

Lin, J. Y.

R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94(6), 063505 (2009).
[Crossref]

Liu, G.

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes with Microsphere Arrays,” Journal of Display Technology 9(5), 317–323 (2013).
[Crossref]

Liu, J.

J. Liu, J. Limb, Z. Lochner, D. Yoo, J.-H. Ryou, and R. D. Dupuis, “Green light-emitting diodes with pInGaN:Mg grown on C-plane sapphire and GaN substrates,” Phys. Status Solidi., A Appl. Mater. Sci. 206(4), 750–753 (2009).
[Crossref]

Lochner, Z.

J. Liu, J. Limb, Z. Lochner, D. Yoo, J.-H. Ryou, and R. D. Dupuis, “Green light-emitting diodes with pInGaN:Mg grown on C-plane sapphire and GaN substrates,” Phys. Status Solidi., A Appl. Mater. Sci. 206(4), 750–753 (2009).
[Crossref]

Luo, G.

J. J. Diao, J. B. Hutchison, G. Luo, and M. E. Reeves, “Theoretical analysis of vertical colloidal deposition,” J. Chem. Phys. 122(18), 184710 (2005).
[Crossref] [PubMed]

Lutgen, S.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Mackenzie, J. D.

C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
[Crossref]

McFarland, M. J.

P. Jiang and M. J. McFarland, “Wafer-scale periodic nanohole arrays templated from two-dimensional nonclose-packed colloidal crystals,” J. Am. Chem. Soc. 127(11), 3710–3711 (2005).
[Crossref] [PubMed]

McGoogan, M. R.

Mishra, U. K.

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Miyashita, N.

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
[Crossref]

Mukai, T.

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys. 34(Part 2, No. 10B), L1332–L1335 (1995).
[Crossref]

Nagahama, S.

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys. 34(Part 2, No. 10B), L1332–L1335 (1995).
[Crossref]

Nagayama, K.

A. S. Dimitrov and K. Nagayama, “Continuous convective assembling of fine particles into two-dimensional arrays on solid surfaces,” Langmuir 12(5), 1303–1311 (1996).
[Crossref]

A. S. Dimitrov and K. Nagayama, “Continuous convective assembling of fine particles into two-dimensional arrays on solid surfaces,” Langmuir 12(5), 1303–1311 (1996).
[Crossref]

Nakamura, S.

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys. 34(Part 2, No. 10B), L1332–L1335 (1995).
[Crossref]

Neufeld, C. J.

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Nurmikko, A. V.

J. Han and A. V. Nurmikko, “Advances in AlGaInN blue and ultraviolet light emitters,” IEEE J. Sel. Top. Quantum Electron. 8(2), 289–297 (2002).
[Crossref]

Pantha, B.

R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94(6), 063505 (2009).
[Crossref]

Pearton, S. J.

C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
[Crossref]

Queren, D.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Reeves, M. E.

J. J. Diao, J. B. Hutchison, G. Luo, and M. E. Reeves, “Theoretical analysis of vertical colloidal deposition,” J. Chem. Phys. 122(18), 184710 (2005).
[Crossref] [PubMed]

Ryou, J.-H.

J. Liu, J. Limb, Z. Lochner, D. Yoo, J.-H. Ryou, and R. D. Dupuis, “Green light-emitting diodes with pInGaN:Mg grown on C-plane sapphire and GaN substrates,” Phys. Status Solidi., A Appl. Mater. Sci. 206(4), 750–753 (2009).
[Crossref]

Saville, D. A.

R. C. Hayward, D. A. Saville, and I. A. Aksay, “Electrophoretic assembly of colloidal crystals with optically tunable micropatterns,” Nature 404(6773), 56–59 (2000).
[Crossref] [PubMed]

Schillgalies, M.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Senoh, M.

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys. 34(Part 2, No. 10B), L1332–L1335 (1995).
[Crossref]

Shimmin, R. G.

R. G. Shimmin, A. J. DiMauro, and P. V. Braun, “Slow vertical deposition of colloidal Crystals: a Langmuir-Blodgett process?” Langmuir 22(15), 6507–6513 (2006).
[Crossref] [PubMed]

Shul, R. J.

C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
[Crossref]

Song, R. B.

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

Stevenson, K. J.

R. C. Bailey, K. J. Stevenson, and J. T. Hupp, “Assembly of micropatterned colloidal gold thin films via microtransfer molding and electrophoretic deposition,” Adv. Mater. 12(24), 1930–1934 (2000).
[Crossref]

Strauß, U.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Taillepierre, P.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Tansu, N.

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes with Microsphere Arrays,” Journal of Display Technology 9(5), 317–323 (2013).
[Crossref]

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[Crossref] [PubMed]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[Crossref] [PubMed]

P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays,” Langmuir 24(21), 12150–12157 (2008).
[Crossref] [PubMed]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using sio2 / polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007).
[Crossref]

Teepe, M.

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
[Crossref]

Toledo, N. G.

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Tong, H.

Treat, D. W.

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
[Crossref]

Vanduyne, R. P.

J. C. Hulteen and R. P. Vanduyne, “Nanosphere lithography: A materials general fabrication process for periodic particle array surfaces,” J. Vac. Sci. Technol. A 13(3), 1553–1558 (1995).
[Crossref]

Vartuli, C. B.

C. B. Vartuli, J. D. Mackenzie, J. W. Lee, C. R. Abernathy, S. J. Pearton, and R. J. Shul, “Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides,” J. Appl. Phys. 80(7), 3705–3709 (1996).
[Crossref]

Wong, K. K.-Y.

W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
[Crossref]

Yamada, T.

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys. 34(Part 2, No. 10B), L1332–L1335 (1995).
[Crossref]

Yang, S.

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Yoo, D.

J. Liu, J. Limb, Z. Lochner, D. Yoo, J.-H. Ryou, and R. D. Dupuis, “Green light-emitting diodes with pInGaN:Mg grown on C-plane sapphire and GaN substrates,” Phys. Status Solidi., A Appl. Mater. Sci. 206(4), 750–753 (2009).
[Crossref]

Zhang, J.

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes with Microsphere Arrays,” Journal of Display Technology 9(5), 317–323 (2013).
[Crossref]

Zhao, H.

Zhao, P.

Zhu, P.

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes with Microsphere Arrays,” Journal of Display Technology 9(5), 317–323 (2013).
[Crossref]

Adv. Mater. (1)

R. C. Bailey, K. J. Stevenson, and J. T. Hupp, “Assembly of micropatterned colloidal gold thin films via microtransfer molding and electrophoretic deposition,” Adv. Mater. 12(24), 1930–1934 (2000).
[Crossref]

Appl. Phys. B (1)

C. Chan, A. Fischer, A. Gil, P. Taillepierre, C. Lee, S. Yang, C. Hou, H. Chien, D. Cai, K. Hsu, and C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010).
[Crossref]

Appl. Phys. Lett. (8)

W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
[Crossref]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using sio2 / polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007).
[Crossref]

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82(15), 2386–2388 (2003).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94(6), 063505 (2009).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

C. H. Ho, K. Y. Lai, C. A. Lin, G. J. Lin, M. K. Hsing, and J. H. He, “Microdome InGaN-based multiple quantum well solar cells,” Appl. Phys. Lett. 101(2), 023902 (2012).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

J. Han and A. V. Nurmikko, “Advances in AlGaInN blue and ultraviolet light emitters,” IEEE J. Sel. Top. Quantum Electron. 8(2), 289–297 (2002).
[Crossref]

IEEE Photonics Journal (1)

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal 3(3), 489–499 (2011).
[Crossref]

J. Am. Chem. Soc. (1)

P. Jiang and M. J. McFarland, “Wafer-scale periodic nanohole arrays templated from two-dimensional nonclose-packed colloidal crystals,” J. Am. Chem. Soc. 127(11), 3710–3711 (2005).
[Crossref] [PubMed]

J. Appl. Phys. (1)

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Figures (7)

Fig. 1
Fig. 1 The process flow chart of forming III-nitride based microdomes via reactive ion etching for both III-nitride semiconductor and self-assembled SiO2 microsphere monolayer: (a) surface treatment to convert III-nitride surface from hydrophobic to hydrophilic; (b) dip-coating of SiO2 on III-nitride semiconductor to form close-packed monolayer; (c) RIE of both III-nitride semiconductor and SiO2 microspheres to form III-nitride microdomes; (d) HF etching to remove SiO2 residue.
Fig. 2
Fig. 2 The water contact angle of GaN substrate (a) before and (b) after surface hydrophilic treatment; (c) schematic of SiO2 microspheres dip-coating on GaN substrate; (d) SEM image of the hexagonal close-packed SiO2 microsphere monolayer deposited on GaN substrate.
Fig. 3
Fig. 3 The schematic of instrument set up for dip coating deposition.
Fig. 4
Fig. 4 (a) The microscope image of SiO2 microsphere array by dip-coating with colloidal solution components (weight percentage) of 32% silica microspheres, 37% DI-water and 31% ethanol; and (b) the corresponding high contrast microscope image with estimated surface coverage of 65%.
Fig. 5
Fig. 5 (a) The microscope image of SiO2 microsphere array by dip-coating with colloidal solution components (weight percentage) of 30% silica microspheres and 70% ethanol (inset: schematic of ideal close-packed hexagonal microsphere pattern with microsphere surface coverage of 90.7%); and (b) the corresponding high contrast microscope image with estimated surface coverage of 87%.
Fig. 6
Fig. 6 SEM image of SiO2 microspheres with diameter of 500nm deposited on GaN substrate.
Fig. 7
Fig. 7 SEM images of GaN microdome structures formed via four different RIE etching conditions: (a) sample 1; (b) sample 2; (c) sample 3; and (d) sample 4.

Tables (1)

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Table 1 Four different reactive ion etching process conditions for GaN substrates deposited with close-packed SiO2 microsphere monolayer (diameter of 1µm) to form GaN microdomes.

Equations (1)

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V w = βl j e φ ( 1ε )xd( 1φ )

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