Abstract

Silicon nitride-based light-emitting devices were fabricated with a SiNx emitting layer grown on annealed Si film of dense nano-crystalline cones. Comparative studies revealed that the patterned SiNx emitting layer, with embedding nanocrystalline Si cones and a rough surface morphology of its own, manifests a much enhanced, even doubled at sufficiently large injected current density, electroluminescence efficiency. Both the increased light-extraction capability and the effective hole-blocking by the presence of Si nanocones, the latter is favorable for the balance of carrier injection in emitting layer, are responsible for this remarkable efficiency enhancement. The current work established an alternative approach toward the fabrication of more efficient SiN-based light-emitting devices.

© 2015 Optical Society of America

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
  4. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
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  5. N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
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  6. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater. 4(2), 143–146 (2005).
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
  22. D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
    [Crossref] [PubMed]
  23. W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).
  24. J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett. 93(15), 151116 (2008).
    [Crossref]
  25. M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
  26. A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
    [Crossref]
  27. D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
    [Crossref] [PubMed]
  28. R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express 18(2), 1144–1150 (2010).
    [Crossref] [PubMed]

2014 (3)

H.-Y. Tai, C.-H. Cheng, and G.-R. Lin, “Blue-green light emission from Si and SiC quantum dots co-doped Si-rich SiC p-i-n junction diode,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200507 (2014).

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express 4(2), 205–212 (2014).

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

2013 (4)

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron. 19(3), 4602504 (2013).
[Crossref]

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[Crossref]

2012 (1)

2011 (2)

Y. Liu, J. Xu, H. Sun, S. Sun, W. Xu, L. Xu, and K. Chen, “Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates,” Opt. Express 19(4), 3347–3352 (2011).
[Crossref] [PubMed]

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett. 98(6), 061105 (2011).
[Crossref]

2010 (3)

S. Yerci, R. Li, S. O. Kucheyev, T. V. Buuren, S. N. Basu, and L. D. Negro, “Visible and 1.54 m emission from amorphous silicon nitride films by reactive cosputtering,” IEEE J. Sel. Top. Quantum Electron. 16(1), 114–123 (2010).
[Crossref]

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett. 97(22), 221113 (2010).
[Crossref]

R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express 18(2), 1144–1150 (2010).
[Crossref] [PubMed]

2009 (2)

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

B. H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett. 95(15), 153103 (2009).
[Crossref]

2008 (2)

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett. 93(15), 151116 (2008).
[Crossref]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).

2007 (2)

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett. 91(9), 093122 (2007).
[Crossref]

2006 (2)

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

2005 (1)

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater. 4(2), 143–146 (2005).
[Crossref] [PubMed]

2002 (1)

A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
[Crossref]

2001 (1)

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

2000 (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

1992 (1)

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

1991 (1)

A. G. Cullis and L. T. Canham, “Visible light emission due to quantum size effects in highly porous crystalline silicon,” Nature 353(6342), 335–338 (1991).
[Crossref]

1984 (1)

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Abramov, A.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett. 97(22), 221113 (2010).
[Crossref]

Anopchenko, A.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).

Atwater, H. A.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater. 4(2), 143–146 (2005).
[Crossref] [PubMed]

Basu, S. N.

S. Yerci, R. Li, S. O. Kucheyev, T. V. Buuren, S. N. Basu, and L. D. Negro, “Visible and 1.54 m emission from amorphous silicon nitride films by reactive cosputtering,” IEEE J. Sel. Top. Quantum Electron. 16(1), 114–123 (2010).
[Crossref]

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett. 93(15), 151116 (2008).
[Crossref]

Bennett, A. J.

A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
[Crossref]

Bourianoff, G. I.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater. 4(2), 143–146 (2005).
[Crossref] [PubMed]

Brorson, S. D.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Buuren, T. V.

S. Yerci, R. Li, S. O. Kucheyev, T. V. Buuren, S. N. Basu, and L. D. Negro, “Visible and 1.54 m emission from amorphous silicon nitride films by reactive cosputtering,” IEEE J. Sel. Top. Quantum Electron. 16(1), 114–123 (2010).
[Crossref]

Canham, L. T.

A. G. Cullis and L. T. Canham, “Visible light emission due to quantum size effects in highly porous crystalline silicon,” Nature 353(6342), 335–338 (1991).
[Crossref]

Cen, Z. H.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Chen, D.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

Chen, K.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Y. Liu, J. Xu, H. Sun, S. Sun, W. Xu, L. Xu, and K. Chen, “Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates,” Opt. Express 19(4), 3347–3352 (2011).
[Crossref] [PubMed]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

Chen, K. J.

Chen, S.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

Chen, T. P.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Cheng, C.-H.

H.-Y. Tai, C.-H. Cheng, and G.-R. Lin, “Blue-green light emission from Si and SiC quantum dots co-doped Si-rich SiC p-i-n junction diode,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200507 (2014).

Cho, C.-H.

B. H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett. 95(15), 153103 (2009).
[Crossref]

Cho, K.-S.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Choi, C. J.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Chu, P. K.

Cullis, A. G.

A. G. Cullis and L. T. Canham, “Visible light emission due to quantum size effects in highly porous crystalline silicon,” Nature 353(6342), 335–338 (1991).
[Crossref]

Cutro, J. A.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Dal Negro, L.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett. 93(15), 151116 (2008).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Davis, R. F.

B. H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett. 95(15), 153103 (2009).
[Crossref]

DiMaria, D. J.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Ding, H. L.

Ding, L.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett. 98(6), 061105 (2011).
[Crossref]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Dong, D. W.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Dong, H.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

Feng, D.

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

Franzò, G.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Fung, S.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Goh, W. P.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Guo, Y.

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express 4(2), 205–212 (2014).

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[Crossref]

Guo, Y. Q.

Han, P.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

Hong, J. C.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Huang, J.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).

Huang, R.

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express 4(2), 205–212 (2014).

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[Crossref]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett. 37(4), 692–694 (2012).
[Crossref] [PubMed]

R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express 18(2), 1144–1150 (2010).
[Crossref] [PubMed]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

Huang, X.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

Huh, C.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Kamyab, L.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett. 98(6), 061105 (2011).
[Crossref]

Kim, B. H.

B. H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett. 95(15), 153103 (2009).
[Crossref]

Kim, K.-H.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Kim, T.-Y.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Kirtley, J. R.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Kuan, T. S.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Kucheyev, S. O.

S. Yerci, R. Li, S. O. Kucheyev, T. V. Buuren, S. N. Basu, and L. D. Negro, “Visible and 1.54 m emission from amorphous silicon nitride films by reactive cosputtering,” IEEE J. Sel. Top. Quantum Electron. 16(1), 114–123 (2010).
[Crossref]

Kuo, H. C.

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett. 91(9), 093122 (2007).
[Crossref]

Li, D.

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron. 19(3), 4602504 (2013).
[Crossref]

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

Li, H.

Li, R.

S. Yerci, R. Li, S. O. Kucheyev, T. V. Buuren, S. N. Basu, and L. D. Negro, “Visible and 1.54 m emission from amorphous silicon nitride films by reactive cosputtering,” IEEE J. Sel. Top. Quantum Electron. 16(1), 114–123 (2010).
[Crossref]

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett. 93(15), 151116 (2008).
[Crossref]

Li, W.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

Lin, C. J.

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett. 91(9), 093122 (2007).
[Crossref]

Lin, G. R.

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett. 91(9), 093122 (2007).
[Crossref]

Lin, G.-R.

H.-Y. Tai, C.-H. Cheng, and G.-R. Lin, “Blue-green light emission from Si and SiC quantum dots co-doped Si-rich SiC p-i-n junction diode,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200507 (2014).

Lin, H.

Lin, Z.

Liu, Y.

Y. Liu, J. Xu, H. Sun, S. Sun, W. Xu, L. Xu, and K. Chen, “Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates,” Opt. Express 19(4), 3347–3352 (2011).
[Crossref] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Liu, Z.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Lo, G.-Q.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett. 98(6), 061105 (2011).
[Crossref]

Ma, Z.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

Ma, Z. Y.

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Mu, W.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Murray, R.

A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
[Crossref]

Negro, L. D.

S. Yerci, R. Li, S. O. Kucheyev, T. V. Buuren, S. N. Basu, and L. D. Negro, “Visible and 1.54 m emission from amorphous silicon nitride films by reactive cosputtering,” IEEE J. Sel. Top. Quantum Electron. 16(1), 114–123 (2010).
[Crossref]

Pakulis, E. J.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Park, N. M.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Park, N.-M.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Park, S. J.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Park, S.-J.

B. H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett. 95(15), 153103 (2009).
[Crossref]

Parry, G.

A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
[Crossref]

Pavesi, L.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Pesavento, F. L.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Priolo, F.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Qian, B.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

Que, D.

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

Que, Q.

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron. 19(3), 4602504 (2013).
[Crossref]

Roberts, C.

A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
[Crossref]

Roberts, J. S.

A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
[Crossref]

Roca i Cabarrocas, P.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett. 97(22), 221113 (2010).
[Crossref]

Rusli, M. B. Yu.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett. 98(6), 061105 (2011).
[Crossref]

Seong, T. Y.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Shin, J.-H.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Song, C.

Song, J.

Stavrinou, P. N.

A. J. Bennett, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry, and J. S. Roberts, “A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm,” J. Appl. Phys. 92(10), 6215–6218 (2002).
[Crossref]

Suendo, V.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett. 97(22), 221113 (2010).
[Crossref]

Sun, H.

Sun, S.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Y. Liu, J. Xu, H. Sun, S. Sun, W. Xu, L. Xu, and K. Chen, “Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates,” Opt. Express 19(4), 3347–3352 (2011).
[Crossref] [PubMed]

Sung, G. Y.

K.-H. Kim, J.-H. Shin, N.-M. Park, C. Huh, T.-Y. Kim, K.-S. Cho, J. C. Hong, and G. Y. Sung, “Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern,” Appl. Phys. Lett. 89(19), 191120 (2006).
[Crossref]

Tai, H.-Y.

H.-Y. Tai, C.-H. Cheng, and G.-R. Lin, “Blue-green light emission from Si and SiC quantum dots co-doped Si-rich SiC p-i-n junction diode,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200507 (2014).

Theis, T. N.

D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, “Electroluminescence studies in silicon dioxide films containing tiny silicon islands,” J. Appl. Phys. 56(2), 401–416 (1984).
[Crossref]

Walters, R. J.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater. 4(2), 143–146 (2005).
[Crossref] [PubMed]

Wang, D. Q.

Wang, F.

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron. 19(3), 4602504 (2013).
[Crossref]

Wang, J.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett. 97(22), 221113 (2010).
[Crossref]

Wang, M.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).

Wang, X.

Warga, J.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett. 93(15), 151116 (2008).
[Crossref]

Wong, J. I.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Wu, X. L.

Xu, J.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Y. Liu, J. Xu, H. Sun, S. Sun, W. Xu, L. Xu, and K. Chen, “Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates,” Opt. Express 19(4), 3347–3352 (2011).
[Crossref] [PubMed]

R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express 18(2), 1144–1150 (2010).
[Crossref] [PubMed]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

Xu, L.

Xu, W.

Yang, D.

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

D. Li, F. Wang, D. Yang, and D. Que, “Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons,” Appl. Phys. Lett. 102(8), 081108 (2013).
[Crossref] [PubMed]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron. 19(3), 4602504 (2013).
[Crossref]

Yang, D. L. D.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).

Yang, M.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009).
[Crossref]

Yerci, S.

S. Yerci, R. Li, S. O. Kucheyev, T. V. Buuren, S. N. Basu, and L. D. Negro, “Visible and 1.54 m emission from amorphous silicon nitride films by reactive cosputtering,” IEEE J. Sel. Top. Quantum Electron. 16(1), 114–123 (2010).
[Crossref]

Yu, L.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett. 97(22), 221113 (2010).
[Crossref]

Yuan, Z.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. L. D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).

Zhang, P.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

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J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett. 97(22), 221113 (2010).
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W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

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Figures (6)

Fig. 1
Fig. 1 Atomic force microscopic images of (a) a ~20 nm thick layer of Si showing dense nanocones arising from thermal annealing; (b) the Si layer in (a) covered with a SiNx layer of 40 nm in thickness; and (c) a SiNx layer directly grown onto the Si substrate for comparison.
Fig. 2
Fig. 2 Reflectance spectra from the patterned SiNx layer (solid line) and from the flat SiNx layer (dashed line), respectively.
Fig. 3
Fig. 3 Integrated EL intensities as a function of the injected current density for devices prepared with the patterned SiNx emitting layer (empty square) and with a flat SiNx emitting layer (solid square), respectively. Inset shows the EL spectra of corresponding devices, driven by an injected current density of 793 mA/cm2. The driving voltage for the former (referring to the solid line) is 28 V, while for the latter (referring to the dashed line) it is 24 V.
Fig. 4
Fig. 4 Ratios of the integrated EL intensity to the injection current density as a function of the latter for the devices made of a patterned (empty square) and of a flat (solid square) SiNx emitting layer, respectively.
Fig. 5
Fig. 5 Ln (I) as a function of ln (P1/2) for the devices made of a patterned (empty triangle) and of a flat (solid triangle) SiNx emitting layer. The calculated Z parameter for each curve is also specified.
Fig. 6
Fig. 6 (a) Current-voltage characteristics of devices made of a patterned (empty triangle) and of a flat (solid triangle) SiNx emitting layer, respectively. Inset shows the band diagram for the LED made of patterned SiNx emitting layer, which is drawn according to the electron affinity (χe) and band gaps (Eg) of Si quantum dots, SiNx layer, nanocrystalline Si (nc-Si), bulk Si and aluminum-doped zinc oxide, respectively. The values are taken from Refs [2427]. (b) The trap-assisted tunneling plot based on the In(I)-E−1 relation for the device made of patterned SiNx emitting layer and the Poole-Frenkel plots based on the ln(J/E)-E1/2 relation for the device made of flat SiNx emitting layer, respectively. E is in MV cm−1.

Equations (2)

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I = N Z ( 1 < Z < 3 )
1n ( I )   = Z ln  ( P 1 / 2 ) + C

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