Abstract

Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6H-SiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed to surface state produced during the anodic etching.

© 2016 Optical Society of America

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    [Crossref]
  2. K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
    [Crossref]
  3. J. E. Spanier, G. T. Dunne, L. B. Rowland, and I. P. Herman, “Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering,” Appl. Phys. Lett. 76(26), 3879–3881 (2000).
    [Crossref]
  4. S. Kim, J. E. Spanier, and I. P. Herman, “Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC,” Jpn. J. Appl. Phys. 39(1), 5875–5878 (2000).
    [Crossref]
  5. T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
    [Crossref]
  6. H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
    [Crossref]
  7. S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
    [Crossref]
  8. J. S. Shor, I. Grimberg, B. Z. Weiss, and A. D. Kurtz, “Direct observation of porous SiC formed by anodization in HF,” Appl. Phys. Lett. 62(22), 2836–2838 (1993).
    [Crossref]
  9. Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, “Fabrication and morphology of porous p-type SiC,” J. Appl. Phys. 97(4), 044908 (2005).
    [Crossref]
  10. T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
    [Crossref]
  11. A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, “Photoluminescence studies of porous silicon carbide,” Appl. Phys. Lett. 66(17), 2250 (1995).
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  12. Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
    [Crossref] [PubMed]
  13. O. Jessensky, F. Müller, and U. Gösele, “Microstructure and photoluminescence of electrochemically etched porous SiC,” Thin Solid Films 297(1-2), 224–228 (1997).
    [Crossref]
  14. D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
    [Crossref]
  15. A. T. Cao, Q. N. T. Luong, and C. T. Dao, “Influence of the anodic etching current density on the morphology of the porous SiC layer,” AIP Adv. 4(3), 037105 (2014).
    [Crossref]
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    [Crossref]
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    [Crossref]
  18. A. M. Rossi, V. Ballarini, S. Ferrero, and F. Giorgis, “Vibrational and Emission Properties of Porous 6H-SiC,” Mater. Sci. Forum 457–460, 1475–1478 (2004).
    [Crossref]
  19. B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
    [Crossref]
  20. G. Dingemans and W. M. M. Kessels, “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells,” J. Vac. Sci. Technol. A-Vac. Surf. Films 30(4), 040802 (2012).
    [Crossref]
  21. D. Suh and K. Weber, “Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2stacks,” Phys. Status Solidi Rapid Res. Lett. 8(1), 40–43 (2014).
    [Crossref]
  22. I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).
  23. H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
    [Crossref]
  24. A. Richter, J. Benick, M. Hermle, and S. W. Glunz, “Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3,” Appl. Phys. Lett. 104(6), 061606 (2014).
    [Crossref]
  25. M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
    [Crossref]
  26. A. Dillon, A. Ott, J. Way, and S. George, “Surface chemistry of Al2 O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,” Surf. Sci. 322(1-3), 230–242 (1995).
    [Crossref]
  27. P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
    [Crossref]
  28. N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
    [Crossref]
  29. M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
    [Crossref]
  30. I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
    [Crossref]
  31. W.-J. Lee and M.-H. Hon, “Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition,” J. Phys. Chem. C 114(15), 6917–6921 (2010).
    [Crossref]
  32. C. Jin, B. Liu, Z. Lei, and J. Sun, “Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone,” Nanoscale Res. Lett. 10(1), 95 (2015).
    [Crossref] [PubMed]
  33. J. Fan, H. Li, J. Wang, and M. Xiao, “Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC,” Appl. Phys. Lett. 101(13), 131906 (2012).
    [Crossref]
  34. X. Zhang, T. Lin, P. Zhang, J. Xu, S. Lin, L. Xu, and K. Chen, “Highly efficient near-infrared emission in Er3+ doped silica films containing size-tunable SnO2 nanocrystals,” Opt. Express 22(1), 369–376 (2014).
    [Crossref] [PubMed]
  35. D. N. Goldstein, J. A. McCormick, and S. M. George, “Al2O3Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry,” J. Phys. Chem. C 112(49), 19530–19539 (2008).
    [Crossref]
  36. W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
    [Crossref] [PubMed]

2015 (3)

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

C. Jin, B. Liu, Z. Lei, and J. Sun, “Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone,” Nanoscale Res. Lett. 10(1), 95 (2015).
[Crossref] [PubMed]

2014 (6)

X. Zhang, T. Lin, P. Zhang, J. Xu, S. Lin, L. Xu, and K. Chen, “Highly efficient near-infrared emission in Er3+ doped silica films containing size-tunable SnO2 nanocrystals,” Opt. Express 22(1), 369–376 (2014).
[Crossref] [PubMed]

D. Suh and K. Weber, “Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2stacks,” Phys. Status Solidi Rapid Res. Lett. 8(1), 40–43 (2014).
[Crossref]

A. Richter, J. Benick, M. Hermle, and S. W. Glunz, “Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3,” Appl. Phys. Lett. 104(6), 061606 (2014).
[Crossref]

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

A. T. Cao, Q. N. T. Luong, and C. T. Dao, “Influence of the anodic etching current density on the morphology of the porous SiC layer,” AIP Adv. 4(3), 037105 (2014).
[Crossref]

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

2013 (2)

I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

2012 (3)

G. Dingemans and W. M. M. Kessels, “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells,” J. Vac. Sci. Technol. A-Vac. Surf. Films 30(4), 040802 (2012).
[Crossref]

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

J. Fan, H. Li, J. Wang, and M. Xiao, “Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC,” Appl. Phys. Lett. 101(13), 131906 (2012).
[Crossref]

2011 (3)

P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
[Crossref]

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

2010 (3)

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

W.-J. Lee and M.-H. Hon, “Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition,” J. Phys. Chem. C 114(15), 6917–6921 (2010).
[Crossref]

2009 (1)

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

2008 (1)

D. N. Goldstein, J. A. McCormick, and S. M. George, “Al2O3Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry,” J. Phys. Chem. C 112(49), 19530–19539 (2008).
[Crossref]

2005 (1)

Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, “Fabrication and morphology of porous p-type SiC,” J. Appl. Phys. 97(4), 044908 (2005).
[Crossref]

2004 (2)

A. M. Rossi, V. Ballarini, S. Ferrero, and F. Giorgis, “Vibrational and Emission Properties of Porous 6H-SiC,” Mater. Sci. Forum 457–460, 1475–1478 (2004).
[Crossref]

T. L. Rittenhouse, “Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide,” J. Appl. Phys. 95(2), 490 (2004).
[Crossref]

2000 (3)

J. E. Spanier, G. T. Dunne, L. B. Rowland, and I. P. Herman, “Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering,” Appl. Phys. Lett. 76(26), 3879–3881 (2000).
[Crossref]

S. Kim, J. E. Spanier, and I. P. Herman, “Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC,” Jpn. J. Appl. Phys. 39(1), 5875–5878 (2000).
[Crossref]

M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
[Crossref]

1998 (1)

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

1997 (1)

O. Jessensky, F. Müller, and U. Gösele, “Microstructure and photoluminescence of electrochemically etched porous SiC,” Thin Solid Films 297(1-2), 224–228 (1997).
[Crossref]

1996 (1)

S. Lau, J. Marshall, and L. Tessler, “Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC,” J. Non-Cryst. Solids 198, 907–910 (1996).
[Crossref]

1995 (2)

A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, “Photoluminescence studies of porous silicon carbide,” Appl. Phys. Lett. 66(17), 2250 (1995).
[Crossref]

A. Dillon, A. Ott, J. Way, and S. George, “Surface chemistry of Al2 O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,” Surf. Sci. 322(1-3), 230–242 (1995).
[Crossref]

1994 (1)

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

1993 (2)

J. S. Shor, I. Grimberg, B. Z. Weiss, and A. D. Kurtz, “Direct observation of porous SiC formed by anodization in HF,” Appl. Phys. Lett. 62(22), 2836–2838 (1993).
[Crossref]

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

Aimez, V.

P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
[Crossref]

Akasaki, I.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Amano, H.

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Anh, C. T.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Argyraki, A.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Bacherikov, Y. Y.

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Ballarini, V.

A. M. Rossi, V. Ballarini, S. Ferrero, and F. Giorgis, “Vibrational and Emission Properties of Porous 6H-SiC,” Mater. Sci. Forum 457–460, 1475–1478 (2004).
[Crossref]

Batra, N.

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

Benick, J.

A. Richter, J. Benick, M. Hermle, and S. W. Glunz, “Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3,” Appl. Phys. Lett. 104(6), 061606 (2014).
[Crossref]

Berezovska, N. I.

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Bluet, J.-M.

P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
[Crossref]

Buma, W. J.

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Cameron, M.

M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
[Crossref]

Cao, A. T.

A. T. Cao, Q. N. T. Luong, and C. T. Dao, “Influence of the anodic etching current density on the morphology of the porous SiC layer,” AIP Adv. 4(3), 037105 (2014).
[Crossref]

Cao, D. T.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Chen, C.

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

Chen, K.

Cheng, H.-E.

I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).

Choi, W.

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

Choyke, W. J.

Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, “Fabrication and morphology of porous p-type SiC,” J. Appl. Phys. 97(4), 044908 (2005).
[Crossref]

Dai, N. X.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Dao, C. T.

A. T. Cao, Q. N. T. Luong, and C. T. Dao, “Influence of the anodic etching current density on the morphology of the porous SiC layer,” AIP Adv. 4(3), 037105 (2014).
[Crossref]

de Boer, W. D.

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Devaty, R. P.

Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, “Fabrication and morphology of porous p-type SiC,” J. Appl. Phys. 97(4), 044908 (2005).
[Crossref]

Diaz, S.

M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
[Crossref]

Dillon, A.

A. Dillon, A. Ott, J. Way, and S. George, “Surface chemistry of Al2 O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,” Surf. Sci. 322(1-3), 230–242 (1995).
[Crossref]

Dingemans, G.

G. Dingemans and W. M. M. Kessels, “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells,” J. Vac. Sci. Technol. A-Vac. Surf. Films 30(4), 040802 (2012).
[Crossref]

Dohnalová, K.

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Dou, B.

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

Dunne, G. T.

J. E. Spanier, G. T. Dunne, L. B. Rowland, and I. P. Herman, “Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering,” Appl. Phys. Lett. 76(26), 3879–3881 (2000).
[Crossref]

Duong, P. H.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Fan, J.

J. Fan, H. Li, J. Wang, and M. Xiao, “Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC,” Appl. Phys. Lett. 101(13), 131906 (2012).
[Crossref]

Fang, Y.

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

Ferrero, S.

A. M. Rossi, V. Ballarini, S. Ferrero, and F. Giorgis, “Vibrational and Emission Properties of Porous 6H-SiC,” Mater. Sci. Forum 457–460, 1475–1478 (2004).
[Crossref]

Fréchette, L. G.

P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
[Crossref]

Futagi, T.

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

Gartland, I.

M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
[Crossref]

George, S.

M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
[Crossref]

A. Dillon, A. Ott, J. Way, and S. George, “Surface chemistry of Al2 O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,” Surf. Sci. 322(1-3), 230–242 (1995).
[Crossref]

George, S. M.

D. N. Goldstein, J. A. McCormick, and S. M. George, “Al2O3Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry,” J. Phys. Chem. C 112(49), 19530–19539 (2008).
[Crossref]

Giorgis, F.

A. M. Rossi, V. Ballarini, S. Ferrero, and F. Giorgis, “Vibrational and Emission Properties of Porous 6H-SiC,” Mater. Sci. Forum 457–460, 1475–1478 (2004).
[Crossref]

Glunz, S. W.

A. Richter, J. Benick, M. Hermle, and S. W. Glunz, “Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3,” Appl. Phys. Lett. 104(6), 061606 (2014).
[Crossref]

Goldstein, D. N.

D. N. Goldstein, J. A. McCormick, and S. M. George, “Al2O3Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry,” J. Phys. Chem. C 112(49), 19530–19539 (2008).
[Crossref]

Gope, J.

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

Gösele, U.

O. Jessensky, F. Müller, and U. Gösele, “Microstructure and photoluminescence of electrochemically etched porous SiC,” Thin Solid Films 297(1-2), 224–228 (1997).
[Crossref]

Gregorkiewicz, T.

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Grimberg, I.

J. S. Shor, I. Grimberg, B. Z. Weiss, and A. D. Kurtz, “Direct observation of porous SiC formed by anodization in HF,” Appl. Phys. Lett. 62(22), 2836–2838 (1993).
[Crossref]

Ha, H. T.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Ha, N. T. T.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Harris, C. I.

A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, “Photoluminescence studies of porous silicon carbide,” Appl. Phys. Lett. 66(17), 2250 (1995).
[Crossref]

Henry, A.

A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, “Photoluminescence studies of porous silicon carbide,” Appl. Phys. Lett. 66(17), 2250 (1995).
[Crossref]

Herman, I. P.

J. E. Spanier, G. T. Dunne, L. B. Rowland, and I. P. Herman, “Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering,” Appl. Phys. Lett. 76(26), 3879–3881 (2000).
[Crossref]

S. Kim, J. E. Spanier, and I. P. Herman, “Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC,” Jpn. J. Appl. Phys. 39(1), 5875–5878 (2000).
[Crossref]

Hermle, M.

A. Richter, J. Benick, M. Hermle, and S. W. Glunz, “Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3,” Appl. Phys. Lett. 104(6), 061606 (2014).
[Crossref]

Ho, J.

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

Hoa, P. T. M.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Hon, M.-H.

W.-J. Lee and M.-H. Hon, “Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition,” J. Phys. Chem. C 114(15), 6917–6921 (2010).
[Crossref]

Hsieh, W.

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

Huy, B.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Hwang, J.

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

Iatsunskyi, I.

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

Iwaya, M.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Jancelewicz, M.

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

Janzén, E.

A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, “Photoluminescence studies of porous silicon carbide,” Appl. Phys. Lett. 66(17), 2250 (1995).
[Crossref]

Jessensky, O.

O. Jessensky, F. Müller, and U. Gösele, “Microstructure and photoluminescence of electrochemically etched porous SiC,” Thin Solid Films 297(1-2), 224–228 (1997).
[Crossref]

Jia, R.

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

Jin, C.

C. Jin, B. Liu, Z. Lei, and J. Sun, “Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone,” Nanoscale Res. Lett. 10(1), 95 (2015).
[Crossref] [PubMed]

Jin, Z.

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

Jokubavicius, V.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Jurga, S.

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

Kaiser, M.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Kamiyama, S.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Kanemitsu, Y.

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

Kang, H.

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

Käsebier, T.

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

Ke, Y.

Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, “Fabrication and morphology of porous p-type SiC,” J. Appl. Phys. 97(4), 044908 (2005).
[Crossref]

Kempinski, M.

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

Kessels, W. M. M.

G. Dingemans and W. M. M. Kessels, “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells,” J. Vac. Sci. Technol. A-Vac. Surf. Films 30(4), 040802 (2012).
[Crossref]

Kim, D.-Y.

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

Kim, H.

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

Kim, J.

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

Kim, S.

S. Kim, J. E. Spanier, and I. P. Herman, “Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC,” Jpn. J. Appl. Phys. 39(1), 5875–5878 (2000).
[Crossref]

Konakova, R. V.

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Konstantinov, A. O.

A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, “Photoluminescence studies of porous silicon carbide,” Appl. Phys. Lett. 66(17), 2250 (1995).
[Crossref]

Kroll, M.

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

Kurtz, A. D.

J. S. Shor, I. Grimberg, B. Z. Weiss, and A. D. Kurtz, “Direct observation of porous SiC formed by anodization in HF,” Appl. Phys. Lett. 62(22), 2836–2838 (1993).
[Crossref]

Lau, S.

S. Lau, J. Marshall, and L. Tessler, “Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC,” J. Non-Cryst. Solids 198, 907–910 (1996).
[Crossref]

Lee, C.-S.

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

Lee, W.-J.

W.-J. Lee and M.-H. Hon, “Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition,” J. Phys. Chem. C 114(15), 6917–6921 (2010).
[Crossref]

Lei, Z.

C. Jin, B. Liu, Z. Lei, and J. Sun, “Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone,” Nanoscale Res. Lett. 10(1), 95 (2015).
[Crossref] [PubMed]

Li, H.

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

J. Fan, H. Li, J. Wang, and M. Xiao, “Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC,” Appl. Phys. Lett. 101(13), 131906 (2012).
[Crossref]

Liljedahl, R.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Lin, C.-T.

I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).

Lin, S.

Lin, T.

Lin, W.

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

Linets, L. G.

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Linnarsson, M. K.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Liu, B.

C. Jin, B. Liu, Z. Lei, and J. Sun, “Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone,” Nanoscale Res. Lett. 10(1), 95 (2015).
[Crossref] [PubMed]

Liu, X.

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

Luong, Q. N. T.

A. T. Cao, Q. N. T. Luong, and C. T. Dao, “Influence of the anodic etching current density on the morphology of the porous SiC layer,” AIP Adv. 4(3), 037105 (2014).
[Crossref]

Lysenko, V.

P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
[Crossref]

Lytvyn, O. S.

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Marshall, J.

S. Lau, J. Marshall, and L. Tessler, “Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC,” J. Non-Cryst. Solids 198, 907–910 (1996).
[Crossref]

Masumoto, Y.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

Matsumoto, T.

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

McCormick, J. A.

D. N. Goldstein, J. A. McCormick, and S. M. George, “Al2O3Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry,” J. Phys. Chem. C 112(49), 19530–19539 (2008).
[Crossref]

Mimura, H.

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

Miyoshi, K.

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Müller, F.

O. Jessensky, F. Müller, and U. Gösele, “Microstructure and photoluminescence of electrochemically etched porous SiC,” Thin Solid Films 297(1-2), 224–228 (1997).
[Crossref]

Newby, P.

P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
[Crossref]

Ngan, N. T. T.

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

Nishimura, T.

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Okhrimenko, O. B.

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Ott, A.

A. Dillon, A. Ott, J. Way, and S. George, “Surface chemistry of Al2 O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,” Surf. Sci. 322(1-3), 230–242 (1995).
[Crossref]

Otto, M.

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

Ou, H.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Ou, Y.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Panigrahi, J.

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

Richter, A.

A. Richter, J. Benick, M. Hermle, and S. W. Glunz, “Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3,” Appl. Phys. Lett. 104(6), 061606 (2014).
[Crossref]

Rittenhouse, T. L.

T. L. Rittenhouse, “Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide,” J. Appl. Phys. 95(2), 490 (2004).
[Crossref]

Rossi, A. M.

A. M. Rossi, V. Ballarini, S. Ferrero, and F. Giorgis, “Vibrational and Emission Properties of Porous 6H-SiC,” Mater. Sci. Forum 457–460, 1475–1478 (2004).
[Crossref]

Rowland, L. B.

J. E. Spanier, G. T. Dunne, L. B. Rowland, and I. P. Herman, “Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering,” Appl. Phys. Lett. 76(26), 3879–3881 (2000).
[Crossref]

Salzer, R.

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

Schimmel, S.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Shishkin, Y.

Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, “Fabrication and morphology of porous p-type SiC,” J. Appl. Phys. 97(4), 044908 (2005).
[Crossref]

Shor, J. S.

J. S. Shor, I. Grimberg, B. Z. Weiss, and A. D. Kurtz, “Direct observation of porous SiC formed by anodization in HF,” Appl. Phys. Lett. 62(22), 2836–2838 (1993).
[Crossref]

Singh, P. K.

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

Singh, R.

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

Smith, J.

M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
[Crossref]

Smyntyna, V.

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

Spanier, J. E.

J. E. Spanier, G. T. Dunne, L. B. Rowland, and I. P. Herman, “Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering,” Appl. Phys. Lett. 76(26), 3879–3881 (2000).
[Crossref]

S. Kim, J. E. Spanier, and I. P. Herman, “Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC,” Jpn. J. Appl. Phys. 39(1), 5875–5878 (2000).
[Crossref]

Suh, D.

D. Suh and K. Weber, “Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2stacks,” Phys. Status Solidi Rapid Res. Lett. 8(1), 40–43 (2014).
[Crossref]

Sun, J.

C. Jin, B. Liu, Z. Lei, and J. Sun, “Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone,” Nanoscale Res. Lett. 10(1), 95 (2015).
[Crossref] [PubMed]

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Sun, Y.

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

Svetlichnyi, A. M.

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Syväjärvi, M.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

Takahashi, J.

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

Takeuchi, T.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

Tamaki, T.

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

Teramae, F.

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Tessler, L.

S. Lau, J. Marshall, and L. Tessler, “Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC,” J. Non-Cryst. Solids 198, 907–910 (1996).
[Crossref]

Timmerman, D.

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Tünnermann, A.

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

Uto, H.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

Vandana, J.

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

Wang, J.

J. Fan, H. Li, J. Wang, and M. Xiao, “Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC,” Appl. Phys. Lett. 101(13), 131906 (2012).
[Crossref]

Wang, Y.-W.

I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).

Way, J.

A. Dillon, A. Ott, J. Way, and S. George, “Surface chemistry of Al2 O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,” Surf. Sci. 322(1-3), 230–242 (1995).
[Crossref]

Weber, K.

D. Suh and K. Weber, “Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2stacks,” Phys. Status Solidi Rapid Res. Lett. 8(1), 40–43 (2014).
[Crossref]

Wehrspohn, R. B.

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

Weiss, B. Z.

J. S. Shor, I. Grimberg, B. Z. Weiss, and A. D. Kurtz, “Direct observation of porous SiC formed by anodization in HF,” Appl. Phys. Lett. 62(22), 2836–2838 (1993).
[Crossref]

Wellmann, P.

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Wu, K.

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

Xiao, M.

J. Fan, H. Li, J. Wang, and M. Xiao, “Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC,” Appl. Phys. Lett. 101(13), 131906 (2012).
[Crossref]

Xu, J.

Xu, L.

Yakimova, R.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

Yang, Z.-P.

I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).

Yassievich, I. N.

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Yu, I.-S.

I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).

Zaleski, K.

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

Zhang, H.

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Zhang, P.

Zhang, X.

AIP Adv. (2)

A. T. Cao, Q. N. T. Luong, and C. T. Dao, “Influence of the anodic etching current density on the morphology of the porous SiC layer,” AIP Adv. 4(3), 037105 (2014).
[Crossref]

N. Batra, J. Gope, J. Vandana, J. Panigrahi, R. Singh, and P. K. Singh, “Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,” AIP Adv. 5(6), 067113 (2015).
[Crossref]

Appl. Catal. B (1)

H. Kang, C.-S. Lee, D.-Y. Kim, J. Kim, W. Choi, and H. Kim, “Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel,” Appl. Catal. B 104(1-2), 6–11 (2011).
[Crossref]

Appl. Phys. Lett. (7)

A. Richter, J. Benick, M. Hermle, and S. W. Glunz, “Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3,” Appl. Phys. Lett. 104(6), 061606 (2014).
[Crossref]

M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn, “Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition,” Appl. Phys. Lett. 100(19), 191603 (2012).
[Crossref]

J. Fan, H. Li, J. Wang, and M. Xiao, “Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC,” Appl. Phys. Lett. 101(13), 131906 (2012).
[Crossref]

T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, “Blue‐green luminescence from porous silicon carbide,” Appl. Phys. Lett. 64(2), 226–228 (1994).
[Crossref]

A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, “Photoluminescence studies of porous silicon carbide,” Appl. Phys. Lett. 66(17), 2250 (1995).
[Crossref]

J. E. Spanier, G. T. Dunne, L. B. Rowland, and I. P. Herman, “Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering,” Appl. Phys. Lett. 76(26), 3879–3881 (2000).
[Crossref]

J. S. Shor, I. Grimberg, B. Z. Weiss, and A. D. Kurtz, “Direct observation of porous SiC formed by anodization in HF,” Appl. Phys. Lett. 62(22), 2836–2838 (1993).
[Crossref]

Electron. Lett. (1)

K. Wu, Y. Fang, W. Hsieh, J. Ho, W. Lin, and J. Hwang, “High-responsivity porous-SiC thin-film pn junction photodetector,” Electron. Lett. 34(23), 2243–2244 (1998).
[Crossref]

Eur. Phys. J. B: Condensed Matter Physics (1)

H. Ou, Y. Ou, A. Argyraki, S. Schimmel, M. Kaiser, P. Wellmann, M. K. Linnarsson, V. Jokubavicius, J. Sun, R. Liljedahl, and M. Syväjärvi, “Advances in wide bandgap SiC for optoelectronics,” Eur. Phys. J. B: Condensed Matter Physics 87(3), 58 (2014).
[Crossref]

Int. J. Photoenergy (1)

I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, and C.-T. Lin, “Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells,” Int. J. Photoenergy 2013, 1–7 (2013).

J. Appl. Phys. (3)

B. Dou, R. Jia, Y. Sun, H. Li, C. Chen, Z. Jin, and X. Liu, “Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films,” J. Appl. Phys. 114(17), 174301 (2013).
[Crossref]

Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, “Fabrication and morphology of porous p-type SiC,” J. Appl. Phys. 97(4), 044908 (2005).
[Crossref]

T. L. Rittenhouse, “Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide,” J. Appl. Phys. 95(2), 490 (2004).
[Crossref]

J. Non-Cryst. Solids (1)

S. Lau, J. Marshall, and L. Tessler, “Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC,” J. Non-Cryst. Solids 198, 907–910 (1996).
[Crossref]

J. Phys. Chem. C (2)

D. N. Goldstein, J. A. McCormick, and S. M. George, “Al2O3Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry,” J. Phys. Chem. C 112(49), 19530–19539 (2008).
[Crossref]

W.-J. Lee and M.-H. Hon, “Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition,” J. Phys. Chem. C 114(15), 6917–6921 (2010).
[Crossref]

J. Phys. Conf. Ser. (1)

D. T. Cao, C. T. Anh, N. T. T. Ha, H. T. Ha, B. Huy, P. T. M. Hoa, P. H. Duong, N. T. T. Ngan, and N. X. Dai, “Effect of electrochemical etching solution composition on properties of porous SiC film,” J. Phys. Conf. Ser. 187, 012023 (2009).
[Crossref]

J. Semicond. (1)

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32(1), 013004 (2011).
[Crossref]

J. Vac. Sci. Technol. A-Vac. Surf. Films (1)

G. Dingemans and W. M. M. Kessels, “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells,” J. Vac. Sci. Technol. A-Vac. Surf. Films 30(4), 040802 (2012).
[Crossref]

Jpn. J. Appl. Phys. (1)

S. Kim, J. E. Spanier, and I. P. Herman, “Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC,” Jpn. J. Appl. Phys. 39(1), 5875–5878 (2000).
[Crossref]

Langmuir (1)

M. Cameron, I. Gartland, J. Smith, S. Diaz, and S. George, “Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport,” Langmuir 16(19), 7435–7444 (2000).
[Crossref]

Mater. Sci. Forum (1)

A. M. Rossi, V. Ballarini, S. Ferrero, and F. Giorgis, “Vibrational and Emission Properties of Porous 6H-SiC,” Mater. Sci. Forum 457–460, 1475–1478 (2004).
[Crossref]

Nanoscale Res. Lett. (1)

C. Jin, B. Liu, Z. Lei, and J. Sun, “Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone,” Nanoscale Res. Lett. 10(1), 95 (2015).
[Crossref] [PubMed]

Nat. Nanotechnol. (1)

W. D. de Boer, D. Timmerman, K. Dohnalová, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, “Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals,” Nat. Nanotechnol. 5(12), 878–884 (2010).
[Crossref] [PubMed]

Opt. Express (1)

Phys. Rev. B Condens. Matter (1)

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, “Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites,” Phys. Rev. B Condens. Matter 48(4), 2827–2830 (1993).
[Crossref] [PubMed]

Phys. Status Solidi Rapid Res. Lett. (1)

D. Suh and K. Weber, “Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2stacks,” Phys. Status Solidi Rapid Res. Lett. 8(1), 40–43 (2014).
[Crossref]

Phys. Status Solidi., C Curr. Top. Solid State Phys. (2)

P. Newby, J.-M. Bluet, V. Aimez, L. G. Fréchette, and V. Lysenko, “Structural properties of porous 6H silicon carbide,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(6), 1950–1953 (2011).
[Crossref]

T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “High efficiency violet to blue light emission in porous SiC produced by anodic method,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(10), 2459–2462 (2010).
[Crossref]

Semiconductors (1)

N. I. Berezovska, Y. Y. Bacherikov, R. V. Konakova, O. B. Okhrimenko, O. S. Lytvyn, L. G. Linets, and A. M. Svetlichnyi, “Characterization of porous silicon carbide according to absorption and photoluminescence spectra,” Semiconductors 48(8), 1028–1030 (2014).
[Crossref]

Surf. Sci. (1)

A. Dillon, A. Ott, J. Way, and S. George, “Surface chemistry of Al2 O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,” Surf. Sci. 322(1-3), 230–242 (1995).
[Crossref]

Thin Solid Films (1)

O. Jessensky, F. Müller, and U. Gösele, “Microstructure and photoluminescence of electrochemically etched porous SiC,” Thin Solid Films 297(1-2), 224–228 (1997).
[Crossref]

Vacuum (1)

I. Iatsunskyi, M. Kempiński, M. Jancelewicz, K. Załęski, S. Jurga, and V. Smyntyna, “Structural and XPS characterization of ALD Al2O3 coated porous silicon,” Vacuum 113, 52–58 (2015).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1 Planar and cross-sectional view of SEM images of sample d: (a) the hole on the surface is around 63nm and (b) the overview of the porous layer consisting of three layers with a total thickness of 38.88 µm, (c) the boundary between top layer and middle layer, and (d) the boundary between the middle and bottom layer.
Fig. 2
Fig. 2 Photographs of porous SiC with different etching time (a) 60 min, (b) 150 min, (c) 260 min and (d) 360 min. The corresponding cross-sectional SEM images are also shown underneath, taken near the interface between the porous layer and the substrate.
Fig. 3
Fig. 3 Relationship of porous thickness and dendritic thickness with etching time for 6H-SiC: the trend for total porous layer and dendritic layer (middle + bottom layer) was plotted for analyzation.
Fig. 4
Fig. 4 Comparison of the measured (a) reflectance and (b) transmittance spectra for the flat 6H-SiC sample and the porous samples a, b, c and d.
Fig. 5
Fig. 5 Planar and cross-sectional SEM images of sample d (360 min): (a) the surface holes, (b) top layer, (c) middle layer and (d) bottom layer covered with 20 nm thick TiO2.
Fig. 6
Fig. 6 PL spectra of porous samples (a) with different anodically etching time; (b) passivated by 20 nm thick Al2O3; (c) passivated by 20 nm thick TiO2.
Fig. 7
Fig. 7 The relationship between PL intensity and anodic etching time before and after passivation (PSV) by 20 nm Al2O3 or TiO2.

Equations (6)

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SiC + 6OH SiO 2 + CO 2 + 2H 2 O + 2H + + 8e
SiO 2 + 6F + 2H + H 2 SiF 6 + 2H 2 O + 4e
1 st halfreaction:   AlOH +Al ( CH 3 ) 3 AlOAl ( CH 3 ) 2 + CH 4
2 nd halfreaction:  AlOAl ( CH 3 ) 2 + 2H 2 O AlOAl ( OH ) 2 + 2CH 4
1 st halfreaction: TiOH + TiCl 4 TiO TiCl 3 + HCl
2 nd halfreaction: TiCl + H 2 O TiOH + HCl

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