Abstract

We demonstrated a (GaIn)2O3 films based UV photodetector with a planar photoconductor structure, and investigated the photoresponse properties of the fabricated devices. The (GaIn)2O3 films are of ohmic contact with a Au/Ti electrode. The fabricated photodetectors show relatively high photoresponsivity of more than 0.1 A/W. The turn-on wavelength of the photodetectors varied from 285 to 315 nm with the increase of the indium content from 0.25 to 0.49. The properties of the films were also further investigated. The films are of a (−201) oriented monoclinic phase with a high transmittance of more than 90% in the visible region and smooth surfaces without phase separation. The absorption edges of the films shift toward a longer UV wavelength region with the increase of indium content. The above results suggest that wavelength selective UV detectors can be realized based on these films.

© 2017 Optical Society of America

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References

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    [Crossref] [PubMed]
  3. M. J. Petersen, C. Hansen, and S. Craig, “Ultraviolet A Irradiation Stimulates Collagenase Production in Cultured Human Fibroblasts,” J. Invest. Dermatol. 99(4), 440–444 (1992).
    [Crossref] [PubMed]
  4. M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
    [Crossref]
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    [Crossref] [PubMed]
  7. K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
  10. P. Katiyar, C. Jin, and R. J. Narayan, “Electrical properties of amorphous aluminum oxide thin films,” Acta Mater. 53(9), 2617–2622 (2005).
    [Crossref]
  11. T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
    [Crossref]
  12. R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
    [Crossref]
  13. D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
  16. Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
    [Crossref]
  17. Y. Kokubun, T. Abe, and S. Nakagomi, “Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors,” Phys. Status Solidi 207(7), 1741–1745 (2010).
    [Crossref]
  18. F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
    [Crossref]
  19. X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
    [Crossref]
  20. F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
    [Crossref]
  21. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
    [Crossref]
  22. F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
    [Crossref]
  23. Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
    [Crossref]
  24. S. H. Abud, Z. Hassan, F. K. Yam, and C. W. Chin, “Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N,” Measurement 50, 172–174 (2014).
    [Crossref]
  25. K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
    [Crossref]
  26. X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
    [Crossref]
  27. N. Suzuki, K. Kaneko, and S. Fujita, “Growth of corundum-structured (InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers,” J. Cryst. Growth 401, 670–672 (2014).
    [Crossref]
  28. T. Oshima and S. Fujita, “Properties of Ga2O3-based (InxGa1-x)2O3 alloy thin films grown by molecular beam epitaxy,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 5(9), 3113–3115 (2008).
    [Crossref]

2017 (1)

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

2016 (1)

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

2015 (4)

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

S. Oh, Y. Jung, M. A. Mastro, J. K. Hite, C. R. Eddy, and J. Kim, “Development of solar-blind photodetectors based on Si-implanted β-Ga2O3,” Opt. Express 23(22), 28300–28305 (2015).
[Crossref] [PubMed]

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

2014 (6)

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
[Crossref]

Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
[Crossref]

S. H. Abud, Z. Hassan, F. K. Yam, and C. W. Chin, “Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N,” Measurement 50, 172–174 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

N. Suzuki, K. Kaneko, and S. Fujita, “Growth of corundum-structured (InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers,” J. Cryst. Growth 401, 670–672 (2014).
[Crossref]

2013 (1)

L. Sang, M. Liao, and M. Sumiya, “A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

2011 (2)

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

2010 (3)

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Y. Kokubun, T. Abe, and S. Nakagomi, “Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors,” Phys. Status Solidi 207(7), 1741–1745 (2010).
[Crossref]

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
[Crossref] [PubMed]

2009 (1)

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

2008 (4)

T. Oshima and S. Fujita, “Properties of Ga2O3-based (InxGa1-x)2O3 alloy thin films grown by molecular beam epitaxy,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 5(9), 3113–3115 (2008).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

2006 (1)

N. B. Chen and C. H. Sui, “Recent progress in research on MgxZn1–xO alloys,” Mater. Sci. Eng. B 126(1), 16–21 (2006).
[Crossref]

2005 (1)

P. Katiyar, C. Jin, and R. J. Narayan, “Electrical properties of amorphous aluminum oxide thin films,” Acta Mater. 53(9), 2617–2622 (2005).
[Crossref]

2003 (1)

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

1992 (1)

M. J. Petersen, C. Hansen, and S. Craig, “Ultraviolet A Irradiation Stimulates Collagenase Production in Cultured Human Fibroblasts,” J. Invest. Dermatol. 99(4), 440–444 (1992).
[Crossref] [PubMed]

Abe, T.

Y. Kokubun, T. Abe, and S. Nakagomi, “Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors,” Phys. Status Solidi 207(7), 1741–1745 (2010).
[Crossref]

Abud, S. H.

S. H. Abud, Z. Hassan, F. K. Yam, and C. W. Chin, “Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N,” Measurement 50, 172–174 (2014).
[Crossref]

An, Y. H.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Aono, M.

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
[Crossref] [PubMed]

Arai, N.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Arita, M.

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

Auer, E.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Bando, Y.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Calle, F.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

Chen, N. B.

N. B. Chen and C. H. Sui, “Recent progress in research on MgxZn1–xO alloys,” Mater. Sci. Eng. B 126(1), 16–21 (2006).
[Crossref]

Chen, X.

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

Chen, Z.

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

Chin, C. W.

S. H. Abud, Z. Hassan, F. K. Yam, and C. W. Chin, “Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N,” Measurement 50, 172–174 (2014).
[Crossref]

Chu, X. L.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Craig, S.

M. J. Petersen, C. Hansen, and S. Craig, “Ultraviolet A Irradiation Stimulates Collagenase Production in Cultured Human Fibroblasts,” J. Invest. Dermatol. 99(4), 440–444 (1992).
[Crossref] [PubMed]

Delaunay, J.-J.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Du, X.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Du, X. L.

Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
[Crossref]

Eddy, C. R.

Fan, M.-M.

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

Fan, X. W.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Fang, X.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Fujita, S.

N. Suzuki, K. Kaneko, and S. Fujita, “Growth of corundum-structured (InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers,” J. Cryst. Growth 401, 670–672 (2014).
[Crossref]

T. Oshima and S. Fujita, “Properties of Ga2O3-based (InxGa1-x)2O3 alloy thin films grown by molecular beam epitaxy,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 5(9), 3113–3115 (2008).
[Crossref]

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Gautam, U. K.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Golberg, D.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Gu, C. Z.

Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
[Crossref]

Guo, D.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Guo, D. Y.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Guo, Q.

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
[Crossref]

Guo, X. C.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Guo, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Hansen, C.

M. J. Petersen, C. Hansen, and S. Craig, “Ultraviolet A Irradiation Stimulates Collagenase Production in Cultured Human Fibroblasts,” J. Invest. Dermatol. 99(4), 440–444 (1992).
[Crossref] [PubMed]

Hassan, Z.

S. H. Abud, Z. Hassan, F. K. Yam, and C. W. Chin, “Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N,” Measurement 50, 172–174 (2014).
[Crossref]

Hite, J. K.

Hou, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Hou, Y. N.

Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
[Crossref]

Huang, F.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Jan, H.

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

Jiang, D. Y.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Jiao, L.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Jin, C.

P. Katiyar, C. Jin, and R. J. Narayan, “Electrical properties of amorphous aluminum oxide thin films,” Acta Mater. 53(9), 2617–2622 (2005).
[Crossref]

Ju, Z. G.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Jung, Y.

Kaneko, K.

N. Suzuki, K. Kaneko, and S. Fujita, “Growth of corundum-structured (InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers,” J. Cryst. Growth 401, 670–672 (2014).
[Crossref]

Katiyar, P.

P. Katiyar, C. Jin, and R. J. Narayan, “Electrical properties of amorphous aluminum oxide thin films,” Acta Mater. 53(9), 2617–2622 (2005).
[Crossref]

Kim, J.

Koide, Y.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Kokubun, Y.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Y. Kokubun, T. Abe, and S. Nakagomi, “Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors,” Phys. Status Solidi 207(7), 1741–1745 (2010).
[Crossref]

Kuznetsov, A. Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Li, B.-H.

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

Li, L.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Li, L. H.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Li, P. G.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Li, W.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Li, Y.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Liang, H. L.

Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
[Crossref]

Liao, M.

L. Sang, M. Liao, and M. Sumiya, “A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Liu, K.

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
[Crossref] [PubMed]

Liu, K. W.

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Liu, K.-W.

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

Liu, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Lugstein, A.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Mastro, M. A.

Mei, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Mei, Z. X.

Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
[Crossref]

Monroy, E.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

Nagaoka, T.

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

Nakagomi, S.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Y. Kokubun, T. Abe, and S. Nakagomi, “Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors,” Phys. Status Solidi 207(7), 1741–1745 (2010).
[Crossref]

Narayan, R. J.

P. Katiyar, C. Jin, and R. J. Narayan, “Electrical properties of amorphous aluminum oxide thin films,” Acta Mater. 53(9), 2617–2622 (2005).
[Crossref]

Nishio, M.

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
[Crossref]

Oh, S.

Ohira, S.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Okuno, T.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Omnès, F.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

Oshima, T.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

T. Oshima and S. Fujita, “Properties of Ga2O3-based (InxGa1-x)2O3 alloy thin films grown by molecular beam epitaxy,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 5(9), 3113–3115 (2008).
[Crossref]

Petersen, M. J.

M. J. Petersen, C. Hansen, and S. Craig, “Ultraviolet A Irradiation Stimulates Collagenase Production in Cultured Human Fibroblasts,” J. Invest. Dermatol. 99(4), 440–444 (1992).
[Crossref] [PubMed]

Saito, K.

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
[Crossref]

Sakurai, M.

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
[Crossref] [PubMed]

Sang, L.

L. Sang, M. Liao, and M. Sumiya, “A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

Shan, C. X.

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Shen, D. Z.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Shen, D.-Z.

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

Sui, C. H.

N. B. Chen and C. H. Sui, “Recent progress in research on MgxZn1–xO alloys,” Mater. Sci. Eng. B 126(1), 16–21 (2006).
[Crossref]

Sumiya, M.

L. Sang, M. Liao, and M. Sumiya, “A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

Sun, C. L.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Suzuki, N.

N. Suzuki, K. Kaneko, and S. Fujita, “Growth of corundum-structured (InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers,” J. Cryst. Growth 401, 670–672 (2014).
[Crossref]

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Suzuki, R.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Tanaka, T.

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
[Crossref]

Tang, W.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Tang, W. H.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Tokizono, T.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Wang, X.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

Wu, Z.

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Wu, Z. P.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Xue, Q.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Yam, F. K.

S. H. Abud, Z. Hassan, F. K. Yam, and C. W. Chin, “Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N,” Measurement 50, 172–174 (2014).
[Crossref]

Yamada, I.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Yao, B.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Zhai, T.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Zhang, F.

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
[Crossref]

Zhang, J. Y.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Zhang, T.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, Z.-Z.

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

Zhao, D. X.

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhao, H.-F.

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

Zhao, Y. M.

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Zhong, M.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

ACS Appl. Mater. Interfaces (1)

M.-M. Fan, K.-W. Liu, X. Chen, X. Wang, Z.-Z. Zhang, B.-H. Li, and D.-Z. Shen, “Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength,” ACS Appl. Mater. Interfaces 7(37), 20600–20606 (2015).
[Crossref] [PubMed]

Acta Mater. (1)

P. Katiyar, C. Jin, and R. J. Narayan, “Electrical properties of amorphous aluminum oxide thin films,” Acta Mater. 53(9), 2617–2622 (2005).
[Crossref]

Adv. Funct. Mater. (1)

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Adv. Mater. (1)

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Appl. Phys. Express (1)

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Appl. Phys. Lett. (5)

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, and Q. Guo, “Wide bandgap engineering of (AlGa)2O3 films,” Appl. Phys. Lett. 105(16), 162107 (2014).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du, “Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film,” Appl. Phys. Lett. 105(13), 133510 (2014).
[Crossref]

Ceram. Int. (1)

X. Wang, Z. Chen, F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition,” Ceram. Int. 42(11), 12783–12788 (2016).
[Crossref]

J. Cryst. Growth (1)

N. Suzuki, K. Kaneko, and S. Fujita, “Growth of corundum-structured (InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers,” J. Cryst. Growth 401, 670–672 (2014).
[Crossref]

J. Invest. Dermatol. (1)

M. J. Petersen, C. Hansen, and S. Craig, “Ultraviolet A Irradiation Stimulates Collagenase Production in Cultured Human Fibroblasts,” J. Invest. Dermatol. 99(4), 440–444 (1992).
[Crossref] [PubMed]

J. Mater. Chem. C Mater. Opt. Electron. Devices (2)

M.-M. Fan, K.-W. Liu, X. Chen, Z.-Z. Zhang, B.-H. Li, H.-F. Zhao, and D.-Z. Shen, “Realization of cubic ZnMgO photodetectors for UVB applications,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(2), 313–317 (2015).
[Crossref]

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang, and W. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

J. Phys. D Appl. Phys. (1)

K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, “The growth of ZnMgO alloy films for deep ultraviolet detection,” J. Phys. D Appl. Phys. 41(12), 125104 (2008).
[Crossref]

Mater. Sci. Eng. B (1)

N. B. Chen and C. H. Sui, “Recent progress in research on MgxZn1–xO alloys,” Mater. Sci. Eng. B 126(1), 16–21 (2006).
[Crossref]

Measurement (1)

S. H. Abud, Z. Hassan, F. K. Yam, and C. W. Chin, “Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N,” Measurement 50, 172–174 (2014).
[Crossref]

Nanoscale (1)

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Opt. Express (1)

Phys. Status Solidi (1)

Y. Kokubun, T. Abe, and S. Nakagomi, “Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors,” Phys. Status Solidi 207(7), 1741–1745 (2010).
[Crossref]

Phys. Status Solidi., C Curr. Top. Solid State Phys. (1)

T. Oshima and S. Fujita, “Properties of Ga2O3-based (InxGa1-x)2O3 alloy thin films grown by molecular beam epitaxy,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 5(9), 3113–3115 (2008).
[Crossref]

Semicond. Sci. Technol. (1)

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

Sensors (Basel) (2)

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
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L. Sang, M. Liao, and M. Sumiya, “A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
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Solid State Commun. (1)

F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, “Wide bandgap engineering of (GaIn)2O3 films,” Solid State Commun. 186, 28–31 (2014).
[Crossref]

Thin Solid Films (1)

F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, “Toward the understanding of annealing effects on (GaIn)2O3 films,” Thin Solid Films 578, 1–6 (2015).
[Crossref]

Other (1)

L. D. Marrett, “Non-solar sources of ultraviolet radiation and cutaneous malignant melanoma: a review of the evidence,” in Epidemiological Aspects of Cutaneous Malignant Melanoma, R. P. Gallagher, and J. M. Elwood, eds. (Springer US, 1994), pp. 107–127.

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Figures (8)

Fig. 1
Fig. 1 Schematic illustration of the MSM photodetector.
Fig. 2
Fig. 2 XRD patterns of films deposited from targets with indium content from 0.2 to 0.5.
Fig. 3
Fig. 3 AFM surface morphologies of (GaIn)2O3 films with indium content of (a) 0.25, (b)0.36 and (c)0.49.
Fig. 4
Fig. 4 Transmission spectra of (GaIn)2O3 films with indium content from 0.25 to 0.49.
Fig. 5
Fig. 5 Typical I-V characteristics curves of the (GaIn)2O3 photodetectors with the (a) linear and (b) logarithmic coordinate in the dark, under 200, 300 and 400 nm lights.
Fig. 6
Fig. 6 Typical experimental data and fitted curves of the rise and decay process of (Ga0.75In0.25)2O3 photodetectors.
Fig. 7
Fig. 7 Photo currents of (GaIn)2O3 film photodetectors versus incident wavelength. Insert shows the turn-on wavelength of the photodetectors as a function of indium content
Fig. 8
Fig. 8 Photoresponse of (GaIn)2O3 film photodetectors versus incident wavelength.

Equations (1)

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I= I 0 +Aexp( t τ 1 )+Bexp( t τ 2 )

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