Abstract

Deep ultraviolet solar blind photodetectors based on an ultra-wide band gap semiconductor of β-Ga2O3 have attracted much attention for their potential applications, e.g., missile tracking, space communication, and ozone hole monitoring. As the active layer of photodetectors, the thickness of β-Ga2O3 films plays an important role in the photoelectric performance of the photodetector because it affects the ultraviolet light photoabsorption and the electric field distribution. Highly oriented (2¯01) direction β-Ga2O3 thin films with different thickness (90 nm-540 nm) were grown on (0001) sapphire substrates using radio frequency magnetron sputtering with a substrate temperature of 750 °C. Based on the different thicknesses of β-Ga2O3 thin films, the MSM structure photodetectors were fabricated and the photoelectric performances were investigated. A photodetector with 303 nm thick thin films has the highest light-to-dark current ratio (Ilight/Idark≈16250) and exhibits the best solar-blind photoelectric performance.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]

2018 (6)

S. Oh, C. K. Kim, and J. Kim, “High responsivity β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with ultra-violet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
[Crossref]

S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rrv. 5(1), 011301 (2018).
[Crossref]

M. Baldini, Z. Galazka, and G. Wagner, “Recent progress in the growth of β-Ga2O3 for power electronics applications,” Mat. Sci. Semicon. Proc. 78, 132 (2018)

C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

S. F. Li, S. J. Jiao, D. B. Wang, S. Y. Gao, and J. Z. Wang, “The influence of sputtering power on the structural, morphological and optical properties of beta-Ga2O3 thin films,” J. Alloys Compd. 753, 186–191 (2018).
[Crossref]

A. F. H. lsultany, Z. Hassan, N. M. Ahmed, N. G. Elassnen, and H. R. Abd, “Effects of ZnO seed layer thickness on catalyst-free growth of ZnO nanostructures for enhanced UV photoresponse,” Opt. Laser Technol. 98, 344–353 (2018).
[Crossref]

2017 (5)

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
[Crossref] [PubMed]

S. B. Cui, Z. X. Mei, Y. H. Zhang, H. L. Liang, and X. L. Du, “Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates,” Advanced Optical Materials 5(19), 1700454 (2017).
[Crossref]

Y. Kwon, G. Lee, S. Oh, J. Kim, S. J. Pearton, and F. Ren, “Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching,” Appl. Phys. Lett. 110(13), 131901 (2017).
[Crossref]

S. Manandhar and C. V. Ramana, “Direct, functional relationship between structural and optical properties in titanium-incorporated gallium oxide nanocrystalline thin films,” Appl. Phys. Lett. 110(6), 061902 (2017).
[Crossref]

R. A. Bilodeau, D. Zemlyanov, and R. K. Kramer, “Zemlyanow, and R. K. Kramer, “Liquid metal switches for environmentally responsive electronics,” Adv. Mater. Interfaces 4(5), 1600913 (2017).
[Crossref]

2016 (5)

W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
[Crossref]

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
[Crossref]

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
[Crossref]

2014 (3)

C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

2013 (4)

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates,” IEEE Electron Device Lett. 34, 493 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
[Crossref]

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

2012 (3)

A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
[Crossref] [PubMed]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates,” Appl. Phys. Lett. 100(1), 013504 (2012).
[Crossref]

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[Crossref]

2010 (2)

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

2009 (1)

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

2007 (2)

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

2000 (2)

M. Orita, H. Ohta, M. Hirano, and H. Hosno, “Deep-ultraviolet transparent conductive-Ga2O3 thin films,” Appl. Phys. Lett. 77(25), 4166–4168 (2000).
[Crossref]

G. Cappellini, G. Satta, K. Tenelsen, and F. Bechstedt, “Pressure and strain-dependent quasiparticle energies of cubic, wurtzite and hexagonal BN,” Phys. Status Solidi, B Basic Res. 217(2), 861–867 (2000).
[Crossref]

1999 (2)

E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez, and M. Razeghi, “High-quality visible-blind AlGaN p-i-n photodiodes,” Appl. Phys. Lett. 74(8), 1171–1173 (1999).
[Crossref]

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

1998 (1)

F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
[Crossref]

1994 (1)

M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, “Dielectric properties of electron‐beam deposited Ga2O3 films,” Appl. Phys. Lett. 64(20), 2715–2717 (1994).
[Crossref]

1982 (1)

A. Yoshii, H. Kitazawa, M. Tomizawa, S. Horiguchi, and T. Sudo, “A three-dimensional analysis of semiconductor devices”, IEEE Trans. Electron. Dev.  29, 184–189 (1982)

1976 (1)

T. T. Nang, M. Okuda, T. Matsushita, S. Yokota, and A. Suzuki, “Electrical and optical properties of GexSe1-x amorphous thin films,” Jpn. J. Appl. Phys. 15(5), 849–853 (1976).
[Crossref]

Abd, H. R.

A. F. H. lsultany, Z. Hassan, N. M. Ahmed, N. G. Elassnen, and H. R. Abd, “Effects of ZnO seed layer thickness on catalyst-free growth of ZnO nanostructures for enhanced UV photoresponse,” Opt. Laser Technol. 98, 344–353 (2018).
[Crossref]

Ahmed, N. M.

A. F. H. lsultany, Z. Hassan, N. M. Ahmed, N. G. Elassnen, and H. R. Abd, “Effects of ZnO seed layer thickness on catalyst-free growth of ZnO nanostructures for enhanced UV photoresponse,” Opt. Laser Technol. 98, 344–353 (2018).
[Crossref]

An, Y. H.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
[Crossref] [PubMed]

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
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Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
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M. Baldini, Z. Galazka, and G. Wagner, “Recent progress in the growth of β-Ga2O3 for power electronics applications,” Mat. Sci. Semicon. Proc. 78, 132 (2018)

Bando, Y.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
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A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
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C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
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F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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G. Cappellini, G. Satta, K. Tenelsen, and F. Bechstedt, “Pressure and strain-dependent quasiparticle energies of cubic, wurtzite and hexagonal BN,” Phys. Status Solidi, B Basic Res. 217(2), 861–867 (2000).
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S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rrv. 5(1), 011301 (2018).
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Castex, M. C.

F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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Chandiran, A. K.

A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
[Crossref] [PubMed]

Chen, S.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
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X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
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X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
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W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
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S. B. Cui, Z. X. Mei, Y. H. Zhang, H. L. Liang, and X. L. Du, “Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates,” Advanced Optical Materials 5(19), 1700454 (2017).
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Cui, W.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
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W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
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Delaunay, J. J.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
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Du, X. L.

S. B. Cui, Z. X. Mei, Y. H. Zhang, H. L. Liang, and X. L. Du, “Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates,” Advanced Optical Materials 5(19), 1700454 (2017).
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Elassnen, N. G.

A. F. H. lsultany, Z. Hassan, N. M. Ahmed, N. G. Elassnen, and H. R. Abd, “Effects of ZnO seed layer thickness on catalyst-free growth of ZnO nanostructures for enhanced UV photoresponse,” Opt. Laser Technol. 98, 344–353 (2018).
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Fang, G.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
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M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, “Dielectric properties of electron‐beam deposited Ga2O3 films,” Appl. Phys. Lett. 64(20), 2715–2717 (1994).
[Crossref]

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F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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M. Baldini, Z. Galazka, and G. Wagner, “Recent progress in the growth of β-Ga2O3 for power electronics applications,” Mat. Sci. Semicon. Proc. 78, 132 (2018)

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C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
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Gao, S. Y.

S. F. Li, S. J. Jiao, D. B. Wang, S. Y. Gao, and J. Z. Wang, “The influence of sputtering power on the structural, morphological and optical properties of beta-Ga2O3 thin films,” J. Alloys Compd. 753, 186–191 (2018).
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Gicquel, A.

F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
[Crossref]

Golberg, D.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[Crossref]

Grant, J. T.

C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
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A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
[Crossref] [PubMed]

Guo, D. Y.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
[Crossref] [PubMed]

W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
[Crossref]

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
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X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
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Hao, J. H.

Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
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X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
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A. F. H. lsultany, Z. Hassan, N. M. Ahmed, N. G. Elassnen, and H. R. Abd, “Effects of ZnO seed layer thickness on catalyst-free growth of ZnO nanostructures for enhanced UV photoresponse,” Opt. Laser Technol. 98, 344–353 (2018).
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K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates,” IEEE Electron Device Lett. 34, 493 (2013).
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M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
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K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts,” Appl. Phys. Express 6(8), 086502 (2013).
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M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates,” Appl. Phys. Lett. 100(1), 013504 (2012).
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Hosno, H.

M. Orita, H. Ohta, M. Hirano, and H. Hosno, “Deep-ultraviolet transparent conductive-Ga2O3 thin films,” Appl. Phys. Lett. 77(25), 4166–4168 (2000).
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A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
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F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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S. F. Li, S. J. Jiao, D. B. Wang, S. Y. Gao, and J. Z. Wang, “The influence of sputtering power on the structural, morphological and optical properties of beta-Ga2O3 thin films,” J. Alloys Compd. 753, 186–191 (2018).
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C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

Kamimura, T.

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
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A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
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S. Oh, C. K. Kim, and J. Kim, “High responsivity β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with ultra-violet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
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Koide, Y.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
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R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Kotru, S.

C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
[Crossref]

Koukitu, A.

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
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Kramer, R. K.

R. A. Bilodeau, D. Zemlyanov, and R. K. Kramer, “Zemlyanow, and R. K. Kramer, “Liquid metal switches for environmentally responsive electronics,” Adv. Mater. Interfaces 4(5), 1600913 (2017).
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C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

Krishnamurthy, D.

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
[Crossref]

Kumagai, Y.

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
[Crossref]

Kumar, S. S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Kung, P.

E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez, and M. Razeghi, “High-quality visible-blind AlGaN p-i-n photodiodes,” Appl. Phys. Lett. 74(8), 1171–1173 (1999).
[Crossref]

Kuramata, A.

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates,” IEEE Electron Device Lett. 34, 493 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates,” Appl. Phys. Lett. 100(1), 013504 (2012).
[Crossref]

Kwon, Y.

Y. Kwon, G. Lee, S. Oh, J. Kim, S. J. Pearton, and F. Ren, “Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching,” Appl. Phys. Lett. 110(13), 131901 (2017).
[Crossref]

Lee, G.

Y. Kwon, G. Lee, S. Oh, J. Kim, S. J. Pearton, and F. Ren, “Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching,” Appl. Phys. Lett. 110(13), 131901 (2017).
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Lei, M.

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

Li, B.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
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Li, L. H.

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
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W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
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Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
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D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
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D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
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Li, P. G.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
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Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
[Crossref]

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
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Li, S. F.

S. F. Li, S. J. Jiao, D. B. Wang, S. Y. Gao, and J. Z. Wang, “The influence of sputtering power on the structural, morphological and optical properties of beta-Ga2O3 thin films,” J. Alloys Compd. 753, 186–191 (2018).
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Li, Y. B.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
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Liang, H. L.

S. B. Cui, Z. X. Mei, Y. H. Zhang, H. L. Liang, and X. L. Du, “Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates,” Advanced Optical Materials 5(19), 1700454 (2017).
[Crossref]

Liao, M.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
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Liao, M. Y.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Liu, H.

Liu, K.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
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Liu, N.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
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Lodha, S.

C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

lsultany, A. F. H.

A. F. H. lsultany, Z. Hassan, N. M. Ahmed, N. G. Elassnen, and H. R. Abd, “Effects of ZnO seed layer thickness on catalyst-free growth of ZnO nanostructures for enhanced UV photoresponse,” Opt. Laser Technol. 98, 344–353 (2018).
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Manandhar, S.

S. Manandhar and C. V. Ramana, “Direct, functional relationship between structural and optical properties in titanium-incorporated gallium oxide nanocrystalline thin films,” Appl. Phys. Lett. 110(6), 061902 (2017).
[Crossref]

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Mannaerts, J. P.

M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, “Dielectric properties of electron‐beam deposited Ga2O3 films,” Appl. Phys. Lett. 64(20), 2715–2717 (1994).
[Crossref]

Marshall, R. D.

F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
[Crossref]

Martinez, G.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Mastro, M. A.

S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rrv. 5(1), 011301 (2018).
[Crossref]

Masui, T.

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates,” IEEE Electron Device Lett. 34, 493 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates,” Appl. Phys. Lett. 100(1), 013504 (2012).
[Crossref]

Matsushita, T.

T. T. Nang, M. Okuda, T. Matsushita, S. Yokota, and A. Suzuki, “Electrical and optical properties of GexSe1-x amorphous thin films,” Jpn. J. Appl. Phys. 15(5), 849–853 (1976).
[Crossref]

McPeak, S.

C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
[Crossref]

Mei, Z. X.

S. B. Cui, Z. X. Mei, Y. H. Zhang, H. L. Liang, and X. L. Du, “Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates,” Advanced Optical Materials 5(19), 1700454 (2017).
[Crossref]

Miura, K.

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Monroy, E.

E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez, and M. Razeghi, “High-quality visible-blind AlGaN p-i-n photodiodes,” Appl. Phys. Lett. 74(8), 1171–1173 (1999).
[Crossref]

Murakami, H.

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
[Crossref]

Museur, L.

F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
[Crossref]

Nakagomi, S.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Nang, T. T.

T. T. Nang, M. Okuda, T. Matsushita, S. Yokota, and A. Suzuki, “Electrical and optical properties of GexSe1-x amorphous thin films,” Jpn. J. Appl. Phys. 15(5), 849–853 (1976).
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Nazeeruddin, M. K.

A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
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S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Oh, S.

S. Oh, C. K. Kim, and J. Kim, “High responsivity β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with ultra-violet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
[Crossref]

Y. Kwon, G. Lee, S. Oh, J. Kim, S. J. Pearton, and F. Ren, “Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching,” Appl. Phys. Lett. 110(13), 131901 (2017).
[Crossref]

Ohira, S.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Ohkubo, I.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
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Ohta, H.

M. Orita, H. Ohta, M. Hirano, and H. Hosno, “Deep-ultraviolet transparent conductive-Ga2O3 thin films,” Appl. Phys. Lett. 77(25), 4166–4168 (2000).
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Ohtomo, A.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

Okuda, M.

T. T. Nang, M. Okuda, T. Matsushita, S. Yokota, and A. Suzuki, “Electrical and optical properties of GexSe1-x amorphous thin films,” Jpn. J. Appl. Phys. 15(5), 849–853 (1976).
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Okuno, T.

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Opila, R. L.

M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, “Dielectric properties of electron‐beam deposited Ga2O3 films,” Appl. Phys. Lett. 64(20), 2715–2717 (1994).
[Crossref]

Orita, M.

M. Orita, H. Ohta, M. Hirano, and H. Hosno, “Deep-ultraviolet transparent conductive-Ga2O3 thin films,” Appl. Phys. Lett. 77(25), 4166–4168 (2000).
[Crossref]

Oshima, T.

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Passlack, M.

M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, “Dielectric properties of electron‐beam deposited Ga2O3 films,” Appl. Phys. Lett. 64(20), 2715–2717 (1994).
[Crossref]

Pearton, S. J.

S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rrv. 5(1), 011301 (2018).
[Crossref]

Y. Kwon, G. Lee, S. Oh, J. Kim, S. J. Pearton, and F. Ren, “Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching,” Appl. Phys. Lett. 110(13), 131901 (2017).
[Crossref]

Qu, Y. Y.

Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
[Crossref]

Rafique, S.

C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

Rajian, S.

C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

Ramana, C. V.

S. Manandhar and C. V. Ramana, “Direct, functional relationship between structural and optical properties in titanium-incorporated gallium oxide nanocrystalline thin films,” Appl. Phys. Lett. 110(6), 061902 (2017).
[Crossref]

C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
[Crossref]

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Razeghi, M.

E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez, and M. Razeghi, “High-quality visible-blind AlGaN p-i-n photodiodes,” Appl. Phys. Lett. 74(8), 1171–1173 (1999).
[Crossref]

Ren, F.

S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rrv. 5(1), 011301 (2018).
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F. Foulon, P. Bergonzo, C. Borel, R. D. Marshall, C. Jany, L. Besombes, A. Brambilla, D. Riedel, L. Museur, M. C. Castex, and A. Gicquel, “Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization,” J. Appl. Phys. 84(9), 5331–5336 (1998).
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C. V. Ramana, E. J. Rubio, C. D. Barraza, A. M. Gallardo, S. McPeak, S. Kotru, and J. T. Grant, “Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films,” J. Appl. Phys. 115(4), 043508 (2014).
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S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
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E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez, and M. Razeghi, “High-quality visible-blind AlGaN p-i-n photodiodes,” Appl. Phys. Lett. 74(8), 1171–1173 (1999).
[Crossref]

Sasaki, K.

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates,” IEEE Electron Device Lett. 34, 493 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates,” Appl. Phys. Lett. 100(1), 013504 (2012).
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Satta, G.

G. Cappellini, G. Satta, K. Tenelsen, and F. Bechstedt, “Pressure and strain-dependent quasiparticle energies of cubic, wurtzite and hexagonal BN,” Phys. Status Solidi, B Basic Res. 217(2), 861–867 (2000).
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Schubert, E. F.

M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, “Dielectric properties of electron‐beam deposited Ga2O3 films,” Appl. Phys. Lett. 64(20), 2715–2717 (1994).
[Crossref]

Segawa, Y.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

Shen, D.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Shutthanandan, V.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

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A. Yoshii, H. Kitazawa, M. Tomizawa, S. Horiguchi, and T. Sudo, “A three-dimensional analysis of semiconductor devices”, IEEE Trans. Electron. Dev.  29, 184–189 (1982)

Sun, C. L.

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Suzuki, A.

T. T. Nang, M. Okuda, T. Matsushita, S. Yokota, and A. Suzuki, “Electrical and optical properties of GexSe1-x amorphous thin films,” Jpn. J. Appl. Phys. 15(5), 849–853 (1976).
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Suzuki, R.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
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S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rrv. 5(1), 011301 (2018).
[Crossref]

Tang, W. H.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
[Crossref] [PubMed]

Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
[Crossref]

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

Tenelsen, K.

G. Cappellini, G. Satta, K. Tenelsen, and F. Bechstedt, “Pressure and strain-dependent quasiparticle energies of cubic, wurtzite and hexagonal BN,” Phys. Status Solidi, B Basic Res. 217(2), 861–867 (2000).
[Crossref]

Tetreault, N.

A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
[Crossref] [PubMed]

Thevuthasan, S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Tian, W.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[Crossref]

Tokizono, T.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Tomizawa, M.

A. Yoshii, H. Kitazawa, M. Tomizawa, S. Horiguchi, and T. Sudo, “A three-dimensional analysis of semiconductor devices”, IEEE Trans. Electron. Dev.  29, 184–189 (1982)

Wagner, G.

M. Baldini, Z. Galazka, and G. Wagner, “Recent progress in the growth of β-Ga2O3 for power electronics applications,” Mat. Sci. Semicon. Proc. 78, 132 (2018)

Walker, D.

E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez, and M. Razeghi, “High-quality visible-blind AlGaN p-i-n photodiodes,” Appl. Phys. Lett. 74(8), 1171–1173 (1999).
[Crossref]

Wang, C.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Wang, D. B.

S. F. Li, S. J. Jiao, D. B. Wang, S. Y. Gao, and J. Z. Wang, “The influence of sputtering power on the structural, morphological and optical properties of beta-Ga2O3 thin films,” J. Alloys Compd. 753, 186–191 (2018).
[Crossref]

Wang, G. F.

Wang, J. Z.

S. F. Li, S. J. Jiao, D. B. Wang, S. Y. Gao, and J. Z. Wang, “The influence of sputtering power on the structural, morphological and optical properties of beta-Ga2O3 thin films,” J. Alloys Compd. 753, 186–191 (2018).
[Crossref]

Wang, X.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[Crossref]

Wong, M. H.

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
[Crossref]

Wu, Z. P.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
[Crossref] [PubMed]

W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
[Crossref]

Z. P. Wu, G. X. Bai, Y. Y. Qu, D. Y. Guo, L. H. Li, P. G. Li, J. H. Hao, and W. H. Tang, “Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films,” Appl. Phys. Lett. 108(21), 211903 (2016).
[Crossref]

X. C. Guo, N. H. Hao, D. Y. Guo, Z. P. Wu, Y. H. An, X. L. Chu, L. H. Li, P. G. Li, M. Lei, and W. H. Tang, “β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity,” J. Alloys Compd. 660, 136–140 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

Xia, Z. B.

C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

Yamada, I.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Yamakoshi, S.

M. Higashiwki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3 power devices,” J. Semicond. Tech. Sci. 31(3), 034001 (2016).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics,” Appl. Phys. Lett. 103(12), 123511 (2013).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates,” IEEE Electron Device Lett. 34, 493 (2013).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates,” Appl. Phys. Lett. 100(1), 013504 (2012).
[Crossref]

Yang, J. C.

S. J. Pearton, J. C. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rrv. 5(1), 011301 (2018).
[Crossref]

Yasuda, T.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

Yi, C.

A. K. Chandiran, N. Tetreault, R. Humphry-Baker, F. Kessler, E. Baranoff, C. Yi, M. K. Nazeeruddin, and M. Grätzel, “Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells,” Nano Lett. 12(8), 3941–3947 (2012).
[Crossref] [PubMed]

Yokota, S.

T. T. Nang, M. Okuda, T. Matsushita, S. Yokota, and A. Suzuki, “Electrical and optical properties of GexSe1-x amorphous thin films,” Jpn. J. Appl. Phys. 15(5), 849–853 (1976).
[Crossref]

Yoshii, A.

A. Yoshii, H. Kitazawa, M. Tomizawa, S. Horiguchi, and T. Sudo, “A three-dimensional analysis of semiconductor devices”, IEEE Trans. Electron. Dev.  29, 184–189 (1982)

Yuan, L.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zemlyanov, D.

R. A. Bilodeau, D. Zemlyanov, and R. K. Kramer, “Zemlyanow, and R. K. Kramer, “Liquid metal switches for environmentally responsive electronics,” Adv. Mater. Interfaces 4(5), 1600913 (2017).
[Crossref]

Zeng, W.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhai, T.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[Crossref]

Zhang, Y. H.

S. B. Cui, Z. X. Mei, Y. H. Zhang, H. L. Liang, and X. L. Du, “Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates,” Advanced Optical Materials 5(19), 1700454 (2017).
[Crossref]

Zhang, Y. M.

C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

Zhang, Z.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Zhao, D.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Zhao, H.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Zhao, H. P.

C. Joishi, S. Rafique, Z. B. Xia, L. Han, S. Krishnamoorthy, Y. M. Zhang, S. Lodha, H. P. Zhao, and S. Rajian, “Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes,” Appl. Phys. Lett. 11, 031101 (2018).

Zhao, X.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhao, X. L.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
[Crossref] [PubMed]

W. Cui, D. Y. Guo, X. L. Zhao, Z. P. Wu, P. G. Li, L. H. Li, C. Cui, and W. H. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Advances 6(103), 100683 (2016).
[Crossref]

Zheng, Q.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhi, C.

W. Tian, C. Zhi, T. Zhai, S. Chen, X. Wang, M. Liao, D. Golberg, and Y. Bando, “I-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[Crossref]

Zhi, Y. S.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness tuning photoelectric properties of β-Ga2O3 thin film based photodetectors,” J. Nanosci. Nanotechnol. 17(12), 1–4 (2017).
[Crossref] [PubMed]

Zhong, M.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, and J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Zhou, H.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zou, X.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zydzik, G. J.

M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, “Dielectric properties of electron‐beam deposited Ga2O3 films,” Appl. Phys. Lett. 64(20), 2715–2717 (1994).
[Crossref]

ACS Appl. Mater. Interfaces (2)

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “A self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

ACS Photonics (1)

S. Oh, C. K. Kim, and J. Kim, “High responsivity β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with ultra-violet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
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Figures (4)

Fig. 1
Fig. 1 Ga2O3 thin film: (a) XRD patterns at various substrate temperatures.(b)The UV absorbance spectrum and compared with the plot of (ahv)2 versus hv for the sample in inset. (c) Cross-sectional SEM image.
Fig. 2
Fig. 2 The MSM structure β-Ga2O3 solar blind photodetector: (a) the schematic diagram of MSM structure. (b) I-V characteristics curves, the current as a function of the light intensity in the inset. (c) Time-dependent photoresponse to 254 nm light with a light intensity of 1 mW/cm2 under an applied bias of 5 V. (d) Experimental and fitted curve of the rise and decay process photoresponse to 254 nm light.
Fig. 3
Fig. 3 (a) XRD patterns of the Ga2O3 thin film with various thickness ranging from 90 nm to 540 nm. (b) UV visible absorption spectra and the plot of ( a h v ) 2 versus h v in inset. (c) Optical bandgaps with different thickness and the corresponding exponential fitting. (d) Time-dependent photoresponse of the β-Ga2O3 photodetector to UV light under an applied bias of 5 V with various thickness.
Fig. 4
Fig. 4 (a) The incident light of UV light intensity P = 300 μW/cm2, transmitted light intensity decrease with the increase of β-Ga2O3 thin film thickness. (b) Schematic without light: The vertical distribution of electrostatic field schematic in the film based on the MSM structure is shown under an applied bias of 5 V. (c) (Ilight-Idark)/Idark with different thickness. (d) The 303 nm thickness β-Ga2O3 thin film: Time-dependent photoresponse of the MSM photodetector to UV light under an applied bias of 5 V.

Equations (2)

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I = I 0 + A e t τ
I = I 0 e α x

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