Abstract

We report on the sensitized photoluminescence (PL) of Er silicates in a-Si-embedded Er silicate films. A two-step annealing process is utilized, where the first step determines the distribution and the sizes of the a-Si embedded structure and the second step modifies the crystal quality and the phase composition of Er silicates as well as the concentration of sensitizers. The determination of the annealing temperatures and the annealing time for each step requires an overall consideration of these factors. Optimized PL from Er silicates sensitized by luminescent centers (LCs) such as neutral oxygen vacancy (NOV) or non-bridging oxygen hole center (NBOHC) have been achieved in the film annealed at 1000 °C for 30 min followed by 1100 °C for 30 min, which is composed of well-crystallized y-Er2Si2O7 embedded with a-Si clusters.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
  19. O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
    [Crossref]
  20. J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
    [Crossref]
  21. L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
    [Crossref]
  22. D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
    [Crossref]
  23. D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
    [Crossref]
  24. H.-S. Han, S.-Y. Seo, and J. H. Shin, “Optical gain at 1.54 µm in erbium-doped silicon nanocluster sensitized waveguide,” Appl. Phys. Lett. 79(27), 4568–4570 (2001).
    [Crossref]
  25. R. Lo Savio, M. Miritello, A. M. Piro, F. Priolo, and F. Iacona, “The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films,” Appl. Phys. Lett. 93(2), 021919 (2008).
    [Crossref]
  26. K. Masaki, H. Isshiki, T. Kawaguchi, and T. Kimura, “The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction,” Opt. Mater. 28(6-7), 831–835 (2006).
    [Crossref]
  27. H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys. 82(8), 4028–4032 (1997).
    [Crossref]
  28. G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
    [Crossref]
  29. H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
    [Crossref]
  30. L. N. Skuja and A. R. Silin, “Optical properties and energetic structure of non-bridging oxygen centers in vitreous SiO2,” Phys. Status Solidi A 56(1), K11–K13 (1979).
    [Crossref]
  31. M. J. Estes and G. Moddel, “Luminescence from amorphous silicon nanostructures,” Phys. Rev. B 54(20), 14633–14642 (1996).
    [Crossref]
  32. Y. Kanemitsu, M. Iiboshi, and T. Kushida, “Photoluminescence dynamics of amorphous Si/SiO2 quantum wells,” Appl. Phys. Lett. 76(16), 2200–2202 (2000).
    [Crossref]
  33. I. Y. Kim, J. H. Shin, and K. J. Kim, “Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er–Er energy migration,” Appl. Phys. Lett. 95(22), 221101 (2009).
    [Crossref]
  34. B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
    [Crossref]
  35. B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
    [Crossref]

2019 (1)

2018 (1)

A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz, “Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals,” Appl. Phys. Lett. 113(3), 031109 (2018).
[Crossref]

2017 (2)

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

H. Shen, L. Xu, D. Li, and D. Yang, “Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework,” J. Appl. Phys. 122(11), 113103 (2017).
[Crossref]

2016 (1)

Q. Fu, Y. Gao, D. Li, and D. Yang, “Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film,” J. Appl. Phys. 119(20), 203106 (2016).
[Crossref]

2014 (1)

L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
[Crossref]

2013 (3)

J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Semicond. Sci. Technol. 103(7), 071101 (2013).
[Crossref]

2012 (3)

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Pitanti, F. Ferrarese-Lupi, B. Garrido, and L. Pavesi, “Silicon nanocluster sensitization of erbium ions under low-energy optical excitation,” J. Appl. Phys. 111(9), 094314 (2012).
[Crossref]

2010 (1)

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

2009 (2)

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

I. Y. Kim, J. H. Shin, and K. J. Kim, “Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er–Er energy migration,” Appl. Phys. Lett. 95(22), 221101 (2009).
[Crossref]

2008 (1)

R. Lo Savio, M. Miritello, A. M. Piro, F. Priolo, and F. Iacona, “The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films,” Appl. Phys. Lett. 93(2), 021919 (2008).
[Crossref]

2007 (3)

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

2006 (3)

I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, “Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals,” Phys. Rev. Lett. 97(20), 207401 (2006).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

K. Masaki, H. Isshiki, T. Kawaguchi, and T. Kimura, “The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction,” Opt. Mater. 28(6-7), 831–835 (2006).
[Crossref]

2005 (3)

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

A. J. Kenyon, “Erbium in silicon,” Semicond. Sci. Technol. 20(12), R65–R84 (2005).
[Crossref]

L. Pavesi, “Routes toward silicon-based lasers,” Mater. Today 8(1), 18–25 (2005).
[Crossref]

2003 (1)

D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
[Crossref]

2001 (1)

H.-S. Han, S.-Y. Seo, and J. H. Shin, “Optical gain at 1.54 µm in erbium-doped silicon nanocluster sensitized waveguide,” Appl. Phys. Lett. 79(27), 4568–4570 (2001).
[Crossref]

2000 (1)

Y. Kanemitsu, M. Iiboshi, and T. Kushida, “Photoluminescence dynamics of amorphous Si/SiO2 quantum wells,” Appl. Phys. Lett. 76(16), 2200–2202 (2000).
[Crossref]

1997 (3)

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys. 82(8), 4028–4032 (1997).
[Crossref]

A. Polman, “Erbium implanted thin film photonic materials,” J. Appl. Phys. 82(1), 1–39 (1997).
[Crossref]

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, “1.54 µm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[Crossref]

1996 (1)

M. J. Estes and G. Moddel, “Luminescence from amorphous silicon nanostructures,” Phys. Rev. B 54(20), 14633–14642 (1996).
[Crossref]

1995 (1)

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

1979 (1)

L. N. Skuja and A. R. Silin, “Optical properties and energetic structure of non-bridging oxygen centers in vitreous SiO2,” Phys. Status Solidi A 56(1), K11–K13 (1979).
[Crossref]

Anopchenko, A.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Bao, X.-M.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys. 82(8), 4028–4032 (1997).
[Crossref]

Berencén, Y.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Bongiorno, C.

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

Cao, J.

Chou, L. J.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Chueh, Y. L.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Coffey, K. R.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

Colonna, J. P.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Colonna, J.-P.

Daldosso, N.

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

Deren, Y.

J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[Crossref]

Dongsheng, L.

J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[Crossref]

Duanlin, Q.

J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[Crossref]

Estes, M. J.

M. J. Estes and G. Moddel, “Luminescence from amorphous silicon nanostructures,” Phys. Rev. B 54(20), 14633–14642 (1996).
[Crossref]

Estradé, S.

Fan, F.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

Fedeli, J. M.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Fedeli, J.-M.

Feng, W.

J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[Crossref]

Feng, X.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

Ferrarese Lupi, F.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Ferrarese-Lupi, F.

N. Prtljaga, D. Navarro-Urrios, A. Pitanti, F. Ferrarese-Lupi, B. Garrido, and L. Pavesi, “Silicon nanocluster sensitization of erbium ions under low-energy optical excitation,” J. Appl. Phys. 111(9), 094314 (2012).
[Crossref]

Franzò, G.

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
[Crossref]

Fu, Q.

Q. Fu, Y. Gao, D. Li, and D. Yang, “Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film,” J. Appl. Phys. 119(20), 203106 (2016).
[Crossref]

Fujii, M.

I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, “Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals,” Phys. Rev. Lett. 97(20), 207401 (2006).
[Crossref]

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, “1.54 µm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[Crossref]

Fujiwara, Y.

A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz, “Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals,” Appl. Phys. Lett. 113(3), 031109 (2018).
[Crossref]

Gao, Y.

Y. Gao, H. Shen, J. Cao, D. Li, and D. Yang, “Control of the formation and luminescent properties of polymorphic erbium silicates on silicon,” Opt. Mater. Express 9(4), 1716–1727 (2019).
[Crossref]

Q. Fu, Y. Gao, D. Li, and D. Yang, “Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film,” J. Appl. Phys. 119(20), 203106 (2016).
[Crossref]

García, C.

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

Garrido, B.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Pitanti, F. Ferrarese-Lupi, B. Garrido, and L. Pavesi, “Silicon nanocluster sensitization of erbium ions under low-energy optical excitation,” J. Appl. Phys. 111(9), 094314 (2012).
[Crossref]

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

Gourbilleau, F.

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

Gregorkiewicz, T.

A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz, “Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals,” Appl. Phys. Lett. 113(3), 031109 (2018).
[Crossref]

I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, “Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals,” Phys. Rev. Lett. 97(20), 207401 (2006).
[Crossref]

Han, H.-S.

H.-S. Han, S.-Y. Seo, and J. H. Shin, “Optical gain at 1.54 µm in erbium-doped silicon nanocluster sensitized waveguide,” Appl. Phys. Lett. 79(27), 4568–4570 (2001).
[Crossref]

Hayashi, S.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, “1.54 µm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[Crossref]

Heinrich, H.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

Iacona, F.

R. Lo Savio, M. Miritello, A. M. Piro, F. Priolo, and F. Iacona, “The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films,” Appl. Phys. Lett. 93(2), 021919 (2008).
[Crossref]

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
[Crossref]

Ieki, A.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Iiboshi, M.

Y. Kanemitsu, M. Iiboshi, and T. Kushida, “Photoluminescence dynamics of amorphous Si/SiO2 quantum wells,” Appl. Phys. Lett. 76(16), 2200–2202 (2000).
[Crossref]

Irrera, A.

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
[Crossref]

Isshiki, H.

K. Masaki, H. Isshiki, T. Kawaguchi, and T. Kimura, “The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction,” Opt. Mater. 28(6-7), 831–835 (2006).
[Crossref]

Ito, D.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Izeddin, I.

I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, “Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals,” Phys. Rev. Lett. 97(20), 207401 (2006).
[Crossref]

Jambois, O.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Jin, L.

L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
[Crossref]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Semicond. Sci. Technol. 103(7), 071101 (2013).
[Crossref]

Kalkman, J.

T. J. Kippenberg, J. Kalkman, A. Polman, and K. J. Vahala, “Demonstration of an Erbium Doped Microdisk Laser on a Silicon Chip,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), CFI1.

Kanemitsu, Y.

Y. Kanemitsu, M. Iiboshi, and T. Kushida, “Photoluminescence dynamics of amorphous Si/SiO2 quantum wells,” Appl. Phys. Lett. 76(16), 2200–2202 (2000).
[Crossref]

Kanzawa, Y.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, “1.54 µm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[Crossref]

Kawaguchi, T.

K. Masaki, H. Isshiki, T. Kawaguchi, and T. Kimura, “The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction,” Opt. Mater. 28(6-7), 831–835 (2006).
[Crossref]

Kenyon, A. J.

A. J. Kenyon, “Erbium in silicon,” Semicond. Sci. Technol. 20(12), R65–R84 (2005).
[Crossref]

Kik, P. G.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

Kim, I. Y.

I. Y. Kim, J. H. Shin, and K. J. Kim, “Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er–Er energy migration,” Appl. Phys. Lett. 95(22), 221101 (2009).
[Crossref]

Kim, K. J.

I. Y. Kim, J. H. Shin, and K. J. Kim, “Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er–Er energy migration,” Appl. Phys. Lett. 95(22), 221101 (2009).
[Crossref]

Kimura, T.

K. Masaki, H. Isshiki, T. Kawaguchi, and T. Kimura, “The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction,” Opt. Mater. 28(6-7), 831–835 (2006).
[Crossref]

Kippenberg, T. J.

T. J. Kippenberg, J. Kalkman, A. Polman, and K. J. Vahala, “Demonstration of an Erbium Doped Microdisk Laser on a Silicon Chip,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), CFI1.

Kushida, T.

Y. Kanemitsu, M. Iiboshi, and T. Kushida, “Photoluminescence dynamics of amorphous Si/SiO2 quantum wells,” Appl. Phys. Lett. 76(16), 2200–2202 (2000).
[Crossref]

Lebrun, D. M.

A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz, “Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals,” Appl. Phys. Lett. 113(3), 031109 (2018).
[Crossref]

Lesage, A.

A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz, “Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals,” Appl. Phys. Lett. 113(3), 031109 (2018).
[Crossref]

Li, D.

Y. Gao, H. Shen, J. Cao, D. Li, and D. Yang, “Control of the formation and luminescent properties of polymorphic erbium silicates on silicon,” Opt. Mater. Express 9(4), 1716–1727 (2019).
[Crossref]

H. Shen, L. Xu, D. Li, and D. Yang, “Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework,” J. Appl. Phys. 122(11), 113103 (2017).
[Crossref]

Q. Fu, Y. Gao, D. Li, and D. Yang, “Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film,” J. Appl. Phys. 119(20), 203106 (2016).
[Crossref]

L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
[Crossref]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Semicond. Sci. Technol. 103(7), 071101 (2013).
[Crossref]

Li, N.-S.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys. 82(8), 4028–4032 (1997).
[Crossref]

Li, Y.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

Lin, C. J.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Lin, C. K.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Lin, G. R.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Liu, Z.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

Lo Savio, R.

R. Lo Savio, M. Miritello, A. M. Piro, F. Priolo, and F. Iacona, “The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films,” Appl. Phys. Lett. 93(2), 021919 (2008).
[Crossref]

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

Lu, J.

J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[Crossref]

Luelue, X.

J. Lu, L. Dongsheng, X. Luelue, W. Feng, Y. Deren, and Q. Duanlin, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[Crossref]

Marconi, A.

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Masaki, K.

K. Masaki, H. Isshiki, T. Kawaguchi, and T. Kimura, “The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction,” Opt. Mater. 28(6-7), 831–835 (2006).
[Crossref]

Miritello, M.

R. Lo Savio, M. Miritello, A. M. Piro, F. Priolo, and F. Iacona, “The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films,” Appl. Phys. Lett. 93(2), 021919 (2008).
[Crossref]

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
[Crossref]

Moddel, G.

M. J. Estes and G. Moddel, “Luminescence from amorphous silicon nanostructures,” Phys. Rev. B 54(20), 14633–14642 (1996).
[Crossref]

Moskalenko, A. S.

I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, “Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals,” Phys. Rev. Lett. 97(20), 207401 (2006).
[Crossref]

Navarro-Urrios, D.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Pitanti, F. Ferrarese-Lupi, B. Garrido, and L. Pavesi, “Silicon nanocluster sensitization of erbium ions under low-energy optical excitation,” J. Appl. Phys. 111(9), 094314 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

Ning, C. Z.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

Nishikawa, H.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Nukala, H.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

Ohki, Y.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Pacifici, D.

D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
[Crossref]

Pavesi, L.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Pitanti, F. Ferrarese-Lupi, B. Garrido, and L. Pavesi, “Silicon nanocluster sensitization of erbium ions under low-energy optical excitation,” J. Appl. Phys. 111(9), 094314 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
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L. Pavesi, “Routes toward silicon-based lasers,” Mater. Today 8(1), 18–25 (2005).
[Crossref]

Pellegrino, P.

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

Piro, A. M.

R. Lo Savio, M. Miritello, A. M. Piro, F. Priolo, and F. Iacona, “The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films,” Appl. Phys. Lett. 93(2), 021919 (2008).
[Crossref]

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

Pitanti, A.

N. Prtljaga, D. Navarro-Urrios, A. Pitanti, F. Ferrarese-Lupi, B. Garrido, and L. Pavesi, “Silicon nanocluster sensitization of erbium ions under low-energy optical excitation,” J. Appl. Phys. 111(9), 094314 (2012).
[Crossref]

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

Polman, A.

A. Polman, “Erbium implanted thin film photonic materials,” J. Appl. Phys. 82(1), 1–39 (1997).
[Crossref]

T. J. Kippenberg, J. Kalkman, A. Polman, and K. J. Vahala, “Demonstration of an Erbium Doped Microdisk Laser on a Silicon Chip,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), CFI1.

Priolo, F.

R. Lo Savio, M. Miritello, A. M. Piro, F. Priolo, and F. Iacona, “The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films,” Appl. Phys. Lett. 93(2), 021919 (2008).
[Crossref]

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
[Crossref]

D. Pacifici, A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo, “Erbium-doped Si nanocrystals: optical properties and electroluminescent devices,” Phys. E 16(3-4), 331–340 (2003).
[Crossref]

Prtljaga, N.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Pitanti, F. Ferrarese-Lupi, B. Garrido, and L. Pavesi, “Silicon nanocluster sensitization of erbium ions under low-energy optical excitation,” J. Appl. Phys. 111(9), 094314 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

Que, D.

L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
[Crossref]

Ramírez, J. M.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[Crossref]

Rebled, J. M.

Rivallin, P.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

Rizk, R.

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples,” J. Appl. Phys. 108(5), 053518 (2010).
[Crossref]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, and L. Pavesi, “Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix,” Phys. Rev. B 79(19), 193312 (2009).
[Crossref]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[Crossref]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[Crossref]

Ruhge, F. R.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

Savchyn, O.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

Seo, S. Y.

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
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Seo, S.-Y.

H.-S. Han, S.-Y. Seo, and J. H. Shin, “Optical gain at 1.54 µm in erbium-doped silicon nanocluster sensitized waveguide,” Appl. Phys. Lett. 79(27), 4568–4570 (2001).
[Crossref]

Shen, H.

Y. Gao, H. Shen, J. Cao, D. Li, and D. Yang, “Control of the formation and luminescent properties of polymorphic erbium silicates on silicon,” Opt. Mater. Express 9(4), 1716–1727 (2019).
[Crossref]

H. Shen, L. Xu, D. Li, and D. Yang, “Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework,” J. Appl. Phys. 122(11), 113103 (2017).
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Shin, J. H.

I. Y. Kim, J. H. Shin, and K. J. Kim, “Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er–Er energy migration,” Appl. Phys. Lett. 95(22), 221101 (2009).
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H.-S. Han, S.-Y. Seo, and J. H. Shin, “Optical gain at 1.54 µm in erbium-doped silicon nanocluster sensitized waveguide,” Appl. Phys. Lett. 79(27), 4568–4570 (2001).
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L. N. Skuja and A. R. Silin, “Optical properties and energetic structure of non-bridging oxygen centers in vitreous SiO2,” Phys. Status Solidi A 56(1), K11–K13 (1979).
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Skuja, L. N.

L. N. Skuja and A. R. Silin, “Optical properties and energetic structure of non-bridging oxygen centers in vitreous SiO2,” Phys. Status Solidi A 56(1), K11–K13 (1979).
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Song, H.-Z.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys. 82(8), 4028–4032 (1997).
[Crossref]

Sun, H.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

Takiyama, M.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Tengattini, A.

J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology 24(11), 115202 (2013).
[Crossref]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J.-P. Colonna, J.-M. Fedeli, B. Garrido, and L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[Crossref]

J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
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A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz, “Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals,” Appl. Phys. Lett. 113(3), 031109 (2018).
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O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[Crossref]

Vahala, K. J.

T. J. Kippenberg, J. Kalkman, A. Polman, and K. J. Vahala, “Demonstration of an Erbium Doped Microdisk Laser on a Silicon Chip,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), CFI1.

Wang, F.

L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
[Crossref]

Watanabe, E.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
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Xiang, L.

L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
[Crossref]

Xu, L.

H. Shen, L. Xu, D. Li, and D. Yang, “Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework,” J. Appl. Phys. 122(11), 113103 (2017).
[Crossref]

L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
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L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Semicond. Sci. Technol. 103(7), 071101 (2013).
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Yamamoto, K.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, “1.54 µm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[Crossref]

Yang, D.

Y. Gao, H. Shen, J. Cao, D. Li, and D. Yang, “Control of the formation and luminescent properties of polymorphic erbium silicates on silicon,” Opt. Mater. Express 9(4), 1716–1727 (2019).
[Crossref]

H. Shen, L. Xu, D. Li, and D. Yang, “Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework,” J. Appl. Phys. 122(11), 113103 (2017).
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Q. Fu, Y. Gao, D. Li, and D. Yang, “Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film,” J. Appl. Phys. 119(20), 203106 (2016).
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L. Xu, D. Li, L. Jin, L. Xiang, F. Wang, D. Yang, and D. Que, “Evolution of the sensitized Er 3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica,” Nanoscale Res. Lett. 9(1), 456 (2014).
[Crossref]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Semicond. Sci. Technol. 103(7), 071101 (2013).
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I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, “Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals,” Phys. Rev. Lett. 97(20), 207401 (2006).
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Yin, L.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
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Yoshida, M.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, “1.54 µm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
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Zhang, J.-Y.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys. 82(8), 4028–4032 (1997).
[Crossref]

Zhao, S.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
[Crossref]

Zheng, Y.

H. Sun, L. Yin, Z. Liu, Y. Zheng, F. Fan, S. Zhao, X. Feng, Y. Li, and C. Z. Ning, “Giant optical gain in a single-crystal erbium chloride silicate nanowire,” Nat. Photonics 11(9), 589–593 (2017).
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Adv. Mater. (1)

M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Irrera, A. M. Piro, C. Bongiorno, and F. Priolo, “Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films,” Adv. Mater. 19(12), 1582–1588 (2007).
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Figures (3)

Fig. 1.
Fig. 1. (a) Infrared PL spectra of the Er-Si-O films excited at 980 nm. (b) PL decay curve at 1540 nm of sample 1. (c) PL decay curves at 1540 nm of sample 2 to sample 4.
Fig. 2.
Fig. 2. (a) PL spectra in the 400-1000 nm range of sample 2 to sample 4 excited at 325 nm. The red, blue and green lines represent Gaussian fits. (b) PL decay curves at 495 nm and 645 nm of sample 2 and the instrument response curve.
Fig. 3.
Fig. 3. (a) PL spectra of sample 2 to sample 4 excited at 473 nm. (b) PLE spectra of sample 2. (c) PL decay curves at 1540 nm of sample 2 to sample 4.

Tables (2)

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Table 1. Annealing processes and phase compositions of the Er-Si-O films

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Table 2. The lifetime of the fast and slow decay processes for the Er-Si-O films.

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