Abstract

Self-powered photodetectors working in solar-blind region (below 280 nm) have attracted growing attention due to their wide applicability. Monoclinic Ga2O3 (β-Ga2O3) with excellent merits and a wide bandgap (4.9 eV) is regarded as a good candidate for solar-blind photodetector application. Self-powered photodetectors generally based on homo/heterojunction suffer from a complex fabrication process and slow photoresponse because of the interface defects and traps. Herein, we demonstrated a fabrication and characterization of a self-powered metal-semiconductor-metal (MSM) deep-ultraviolet (DUV) photodetector based on single crystal β-Ga2O3. The self-powered property was realized through a simple one-step deposition of an asymmetrical pair of Schottky interdigital contacts. The photocurrent and responsivity increase with the degenerating symmetrical contact. For the device with the most asymmetric interdigital contacts operated at 0 V bias, the maximum photocurrent reaches 2.7 nA. The responsivity Rλ, external quantum efficiency EQE, detectivity D*, and linear dynamic range LDR are 1.28 mA/W, 0.63, 1.77 × 1011 Jones, and 23.5 dB, respectively. The device exhibits excellent repeatability and stability at the same time. Besides, the device presents a fast response speed with a rise time of 0.03 s and a decay time of 0.08 s. All these results indicate a promising and simple method to fabricate a zero-powered DUV photodetector.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
  3. T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
    [Crossref]
  4. K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
    [Crossref]
  5. Z. Lou, L. Li, and G. Shen, “High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires,” Nano Res. 8(7), 2162–2169 (2015).
    [Crossref]
  6. H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
    [Crossref]
  7. H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
    [Crossref]
  8. L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
    [Crossref]
  9. S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
    [Crossref]
  10. S. Oh, C.-K. Kim, and J. Kim, “High Responsivity β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
    [Crossref]
  11. X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
    [Crossref] [PubMed]
  12. K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
    [Crossref]
  13. M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
    [Crossref]
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    [Crossref] [PubMed]
  15. W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
    [Crossref] [PubMed]
  16. M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
    [Crossref]
  17. B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
    [Crossref]
  18. D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
    [Crossref] [PubMed]
  19. L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, “Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3,” Sci. Rep. 7(1), 40160 (2017).
    [Crossref] [PubMed]
  20. R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind beta-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
    [Crossref]
  21. R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
    [Crossref] [PubMed]
  22. L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
    [Crossref]
  23. A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
    [Crossref]
  24. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
    [Crossref]
  25. D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
    [Crossref]
  26. H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
    [Crossref]
  27. L. Su, H. Chen, X. Xu, and X. Fang, “Novel BeZnO Based Self-Powered Dual-Color UV Photodetector Realized via a One-Step Fabrication Method,” Laser Photonics Rev. 11(6), 1700222 (2017).
    [Crossref]

2019 (1)

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

2018 (4)

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
[Crossref]

S. Oh, C.-K. Kim, and J. Kim, “High Responsivity β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
[Crossref]

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

2017 (7)

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, “Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3,” Sci. Rep. 7(1), 40160 (2017).
[Crossref] [PubMed]

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

L. Su, H. Chen, X. Xu, and X. Fang, “Novel BeZnO Based Self-Powered Dual-Color UV Photodetector Realized via a One-Step Fabrication Method,” Laser Photonics Rev. 11(6), 1700222 (2017).
[Crossref]

2016 (3)

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

2015 (3)

H. Chen, K. Liu, L. Hu, A. A. Al-Ghamdi, and X. Fang, “New concept ultraviolet photodetectors,” Mater. Today 18(9), 493–502 (2015).
[Crossref]

Z. Lou, L. Li, and G. Shen, “High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires,” Nano Res. 8(7), 2162–2169 (2015).
[Crossref]

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

2014 (3)

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

2009 (1)

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind beta-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

2008 (1)

T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, “Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity,” Appl. Phys. Lett. 92(10), 103502 (2008).
[Crossref]

2007 (1)

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

2005 (1)

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

2001 (2)

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[Crossref]

Al-Ghamdi, A. A.

H. Chen, K. Liu, L. Hu, A. A. Al-Ghamdi, and X. Fang, “New concept ultraviolet photodetectors,” Mater. Today 18(9), 493–502 (2015).
[Crossref]

Arai, N.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind beta-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Bahir, G.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[Crossref]

Chang, G.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

Chen, H.

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

L. Su, H. Chen, X. Xu, and X. Fang, “Novel BeZnO Based Self-Powered Dual-Color UV Photodetector Realized via a One-Step Fabrication Method,” Laser Photonics Rev. 11(6), 1700222 (2017).
[Crossref]

H. Chen, K. Liu, L. Hu, A. A. Al-Ghamdi, and X. Fang, “New concept ultraviolet photodetectors,” Mater. Today 18(9), 493–502 (2015).
[Crossref]

Chen, H. Y.

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

Chen, H.-Y.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Chen, M.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

Chen, X.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Chyi, J. I.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Cui, C.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Cui, Z.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Dong, L.

L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, “Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3,” Sci. Rep. 7(1), 40160 (2017).
[Crossref] [PubMed]

Fan, M.-M.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Fang, X.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

L. Su, H. Chen, X. Xu, and X. Fang, “Novel BeZnO Based Self-Powered Dual-Color UV Photodetector Realized via a One-Step Fabrication Method,” Laser Photonics Rev. 11(6), 1700222 (2017).
[Crossref]

H. Chen, K. Liu, L. Hu, A. A. Al-Ghamdi, and X. Fang, “New concept ultraviolet photodetectors,” Mater. Today 18(9), 493–502 (2015).
[Crossref]

Gao, H.

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

Garber, V.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[Crossref]

Geng, L.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

Gokkavas, M.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Guo, D.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Guo, L.

L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
[Crossref]

Hama, K.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Han, X.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

He, Y.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

Higashiwaki, M.

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Hu, G.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

Hu, J.

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

Hu, L.

H. Chen, K. Liu, L. Hu, A. A. Al-Ghamdi, and X. Fang, “New concept ultraviolet photodetectors,” Mater. Today 18(9), 493–502 (2015).
[Crossref]

Inal, A.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Inoue, M.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Jia, R.

L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
[Crossref]

L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, “Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3,” Sci. Rep. 7(1), 40160 (2017).
[Crossref] [PubMed]

Jiang, D. L.

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

Jiang, M.-M.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Jiao, S. J.

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

Johnson, J. W.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Jung, H. J.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Katz, O.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[Crossref]

Kim, C.-K.

S. Oh, C.-K. Kim, and J. Kim, “High Responsivity β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
[Crossref]

Kim, J.

S. Oh, C.-K. Kim, and J. Kim, “High Responsivity β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
[Crossref]

Kim, S. B.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Kim, S. M.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Kim, S.-K.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Koike, K.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Koishikawa, Y.

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

Kokubun, Y.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind beta-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Kong, W. Y.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Koukitu, A.

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Kumagai, Y.

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Kuramata, A.

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Lai, P. T.

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

Lee, K. M.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Lee, S. H.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Lee, S. W.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Lei, M.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Li, B.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Li, C.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Li, L.

Z. Lou, L. Li, and G. Shen, “High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires,” Nano Res. 8(7), 2162–2169 (2015).
[Crossref]

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

Li, P.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Li, X.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Li, Y.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Li, Y.-R.

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

Liao, M.

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

Lin, Z.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Liu, H.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Liu, K.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

H. Chen, K. Liu, L. Hu, A. A. Al-Ghamdi, and X. Fang, “New concept ultraviolet photodetectors,” Mater. Today 18(9), 493–502 (2015).
[Crossref]

Liu, K.-W.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Liu, Q.

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

Liu, R.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Liu, X.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

Liu, X.-Z.

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

Lou, Z.

Z. Lou, L. Li, and G. Shen, “High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires,” Nano Res. 8(7), 2162–2169 (2015).
[Crossref]

Lü, X.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Luo, B.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Luo, J.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

Luo, L. B.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Masui, T.

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Meyler, B.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[Crossref]

Moon, Y.-J.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Murakami, H.

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Nakagomi, S.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind beta-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Nakashima, I.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Ogata, K.-i.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Oh, S.

S. Oh, C.-K. Kim, and J. Kim, “High Responsivity β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
[Crossref]

Ohira, S.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind beta-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Ozbay, E.

T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, “Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity,” Appl. Phys. Lett. 92(10), 103502 (2008).
[Crossref]

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Pan, C.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

Park, S. S.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Park, Y. J.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Pearton, S. J.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Peng, B.

L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, “Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3,” Sci. Rep. 7(1), 40160 (2017).
[Crossref] [PubMed]

Qian, L.-X.

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

Qiao, Q.

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

Ren, F.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Salzman, J.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[Crossref]

Sang, L.

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

Sasa, S.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Sasaki, K.

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Seo, M. S.

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

Shen, D.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Shen, D.-Z.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Shen, G.

Z. Lou, L. Li, and G. Shen, “High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires,” Nano Res. 8(7), 2162–2169 (2015).
[Crossref]

Su, L.

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

L. Su, H. Chen, X. Xu, and X. Fang, “Novel BeZnO Based Self-Powered Dual-Color UV Photodetector Realized via a One-Step Fabrication Method,” Laser Photonics Rev. 11(6), 1700222 (2017).
[Crossref]

Suzuki, R.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind beta-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
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Takada, G.-y.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Tang, W.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Thieu, Q. T.

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

Tut, T.

T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, “Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity,” Appl. Phys. Lett. 92(10), 103502 (2008).
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T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
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T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, “Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity,” Appl. Phys. Lett. 92(10), 103502 (2008).
[Crossref]

Wakimoto, D.

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

Wang, C.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Wang, D. D.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Wang, F.

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

Wang, H.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Wang, K. Y.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
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Wang, L.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

Wang, Q.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Wang, S.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Wang, X.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

Wang, Z. L.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

Wu, G. A.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Wu, Z.

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

Wu, Z.-H.

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

Xie, X.-H.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Xin, B.

L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, “Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3,” Sci. Rep. 7(1), 40160 (2017).
[Crossref] [PubMed]

Xin, S.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Xu, X.

L. Su, H. Chen, X. Xu, and X. Fang, “Novel BeZnO Based Self-Powered Dual-Color UV Photodetector Realized via a One-Step Fabrication Method,” Laser Photonics Rev. 11(6), 1700222 (2017).
[Crossref]

Xu, Z. K.

D. L. Jiang, L. Li, H. Y. Chen, H. Gao, Q. Qiao, Z. K. Xu, and S. J. Jiao, “Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process,” Appl. Phys. Lett. 106(17), 171103 (2015).
[Crossref]

Yamakoshi, S.

K. Sasaki, D. Wakimoto, Q. T. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, and S. Yamakoshi, “First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes,” Ieee Electr Device L 38(6), 783–785 (2017).
[Crossref]

M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, “Recent progress in Ga2O3power devices,” Semicond. Sci. Technol. 31(3), 034001 (2016).
[Crossref]

Yang, H.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

Yano, M.

K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278, 288–292 (2005).
[Crossref]

Yelboga, T.

T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, “Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity,” Appl. Phys. Lett. 92(10), 103502 (2008).
[Crossref]

Yuan, K.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Yuan, L.

L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
[Crossref]

Zhang, A. P.

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Appl. Phys. Lett. 79(10), 1555–1557 (2001).
[Crossref]

Zhang, H.

L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
[Crossref]

Zhang, R.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Zhang, T. F.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Zhang, W.

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

Zhang, Y.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
[Crossref]

L. Yuan, H. Zhang, R. Jia, L. Guo, Y. Zhang, and Y. Zhang, “Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (−201),” Appl. Surf. Sci. 433, 530–534 (2018).
[Crossref]

L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, “Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3,” Sci. Rep. 7(1), 40160 (2017).
[Crossref] [PubMed]

Zhang, Y.-Y.

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

Zhang, Z.

H. Yang, L. Geng, Y. Zhang, G. Chang, Z. Zhang, X. Liu, M. Lei, and Y. He, “Graphene-templated synthesis of palladium nanoplates as novel electrocatalyst for direct methanol fuel cell,” Appl. Surf. Sci. 466, 385–392 (2019).
[Crossref]

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

Zhang, Z.-Z.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Zhao, B.

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

Zhao, D.

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Zhao, H.

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

Zhao, H.-F.

H.-Y. Chen, K.-W. Liu, X. Chen, Z.-Z. Zhang, M.-M. Fan, M.-M. Jiang, X.-H. Xie, H.-F. Zhao, and D.-Z. Shen, “Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(45), 9689–9694 (2014).
[Crossref]

Zhao, S.

H. Wang, R. Liu, Y. Li, X. Lü, Q. Wang, S. Zhao, K. Yuan, Z. Cui, X. Li, S. Xin, R. Zhang, M. Lei, and Z. Lin, “Durable and efficient hollow porous oxide spinel microspheres for oxygen reduction,” Joule 2(2), 337–348 (2018).
[Crossref]

Zheng, L.

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

Zou, R.

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented β-Ga2O3 Nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

R. Zou, Z. Zhang, Q. Liu, J. Hu, L. Sang, M. Liao, and W. Zhang, “High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga2O3 nanobelts,” Small 10(9), 1848–1856 (2014).
[Crossref] [PubMed]

Zou, Y. F.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

ACS Appl. Mater. Interfaces (2)

X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, “Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction,” ACS Appl. Mater. Interfaces 8(6), 4185–4191 (2016).
[Crossref] [PubMed]

D. Guo, H. Liu, P. Li, Z. Wu, S. Wang, C. Cui, C. Li, and W. Tang, “Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction,” ACS Appl. Mater. Interfaces 9(2), 1619–1628 (2017).
[Crossref] [PubMed]

ACS Photonics (3)

L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P. T. Lai, X.-Z. Liu, and Y.-R. Li, “Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide,” ACS Photonics 4(9), 2203–2211 (2017).
[Crossref]

S. H. Lee, S. B. Kim, Y.-J. Moon, S. M. Kim, H. J. Jung, M. S. Seo, K. M. Lee, S.-K. Kim, and S. W. Lee, “High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films,” ACS Photonics 4(11), 2937–2943 (2017).
[Crossref]

S. Oh, C.-K. Kim, and J. Kim, “High Responsivity β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes,” ACS Photonics 5(3), 1123–1128 (2018).
[Crossref]

Adv. Funct. Mater. (2)

M. Chen, B. Zhao, G. Hu, X. Fang, H. Wang, L. Wang, J. Luo, X. Han, X. Wang, C. Pan, and Z. L. Wang, “Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga2O3 Heterojuction Microwire,” Adv. Funct. Mater. 28(14), 1706379 (2018).
[Crossref]

B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, and X. Fang, “An Ultrahigh Responsivity (9.7 mA W−1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures,” Adv. Funct. Mater. 27(17), 1700264 (2017).
[Crossref]

Adv. Mater. (1)

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
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Figures (5)

Fig. 1
Fig. 1 (a) Schematic diagram and optical imagines of the Au/β-Ga2O3/Au MSM devices; (b) I-V curves of the DUVPD measured under dark condition, 254 nm and 365 nm light illumination, the inset shows the equivalent circuit of two back-to-back Schottky diodes.
Fig. 2
Fig. 2 (a) I-V curves of the DUVPDs measured under dark condition; (b) I-V curves of the DUVPDs measured under 254 nm light illumination; (c) I-V curve of the DUVPD R5 measured under 254 nm light illumination with various light intensities; (d) The relationship between the light intensity and photocurrent of the DUVPD R5 at 0 V bias.
Fig. 3
Fig. 3 (a) Responsivity Rλ and (b) External quantum efficiency (EQE) for DUVPD R5 as a function of bias voltage.
Fig. 4
Fig. 4 (a) Time-dependent photoresponse of the photodetector R5 illuminated by 254 nm light with the intensity of 1.78 mW/cm2 at a bias of 0 V;(b) enlarged view of the rise/decay edges and the corresponding fitting curves.
Fig. 5
Fig. 5 Energy band diagrams of R5 at 0 V bias in dark(a) and under 254 nm DUV light illumination (b).

Tables (2)

Tables Icon

Table 1 Comparison of the performance parameters of different MSM DUVPDs operated at 0 V under 254 nm light illumination (the light power density is 1.78 mW/cm2).

Tables Icon

Table 2 Comparison of the photodetector’s performance parameters based on Ga2O3 with different forms

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