Abstract

The optical and electrical properties of beryllium-doped GaInP grown by MBE have been investigated. An abnormal hole mobility of the material grown at low temperature was resulting from the two-dimensional holes accumulation at the GaInP/GaAs heterointerface. The optical properties of the materials were affected by the holes accumulation. Two photoluminescence (PL) peaks of the material with holes accumulation was observed. The PL decay characteristic was a double exponential curve and two radiative recombination mechanisms exist in the decay process. Different optical behaviors have shown that holes accumulation would result in the exciton localization effect at the GaInP/GaAs heterointerface.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
    [Crossref]
  2. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
    [Crossref]
  3. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
    [Crossref]
  4. M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins-Daukes, “Multi-junction III-V solar cells: current status and future potential,” Sol. Energy 79(1), 78–85 (2005).
    [Crossref]
  5. P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
    [Crossref]
  6. T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells,” Appl. Phys. Lett. 70(3), 381–383 (1997).
    [Crossref]
  7. I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “A 32.6% efficient lattice matched dual-junction solar cell working at 1000 suns,” Appl. Phys. Lett. 94(5), 053509 (2009).
    [Crossref]
  8. S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
    [Crossref]
  9. P. Leinonen, M. Pessa, J. Haapamaa, and K. Rakennus, “Advances in production MBE grown GaInP/GaAs cascade solar cells,” IEEE Xplore-Photovoltaic Specialists conference2000.
  10. S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
    [Crossref] [PubMed]
  11. D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
    [Crossref]
  12. L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
    [Crossref]
  13. P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
    [Crossref]
  14. M. Ikeda and K. Kaneko, “Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)In0.5P grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 66(11), 5285–5289 (1989).
    [Crossref]
  15. D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
    [Crossref]
  16. T. Kato, T. Matsumoto, and T. Ishida, “Electrical properties of Zn-doped In1-xGaxP,” Jpn. J. Appl. Phys. 19(12), 2367–2375 (1980).
    [Crossref]
  17. D. J. Friedman, A. E. Kibbler, and J. M. Olson, “Cation site ordering and conduction electron scattering in GaInP2,” Appl. Phys. Lett. 59(23), 2998–3000 (1991).
    [Crossref]
  18. N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
    [Crossref]
  19. P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
    [Crossref]
  20. S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
    [Crossref]
  21. P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
    [Crossref]
  22. W. Li, J. Likonen, J. Haapamaa, and M. Pessa, “Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy,” J. Appl. Phys. 87(10), 7592–7593 (2000).
    [Crossref]

2017 (1)

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

2016 (1)

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

2014 (1)

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

2013 (2)

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

2012 (1)

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

2011 (1)

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

2009 (2)

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “A 32.6% efficient lattice matched dual-junction solar cell working at 1000 suns,” Appl. Phys. Lett. 94(5), 053509 (2009).
[Crossref]

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

2007 (1)

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

2005 (1)

M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins-Daukes, “Multi-junction III-V solar cells: current status and future potential,” Sol. Energy 79(1), 78–85 (2005).
[Crossref]

2000 (2)

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

W. Li, J. Likonen, J. Haapamaa, and M. Pessa, “Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy,” J. Appl. Phys. 87(10), 7592–7593 (2000).
[Crossref]

1999 (1)

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

1997 (1)

T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells,” Appl. Phys. Lett. 70(3), 381–383 (1997).
[Crossref]

1996 (1)

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

1994 (1)

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

1991 (1)

D. J. Friedman, A. E. Kibbler, and J. M. Olson, “Cation site ordering and conduction electron scattering in GaInP2,” Appl. Phys. Lett. 59(23), 2998–3000 (1991).
[Crossref]

1990 (1)

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

1989 (1)

M. Ikeda and K. Kaneko, “Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)In0.5P grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 66(11), 5285–5289 (1989).
[Crossref]

1980 (1)

T. Kato, T. Matsumoto, and T. Ishida, “Electrical properties of Zn-doped In1-xGaxP,” Jpn. J. Appl. Phys. 19(12), 2367–2375 (1980).
[Crossref]

Aiken, D.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Algora, C.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “A 32.6% efficient lattice matched dual-junction solar cell working at 1000 suns,” Appl. Phys. Lett. 94(5), 053509 (2009).
[Crossref]

Araki, K.

M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins-Daukes, “Multi-junction III-V solar cells: current status and future potential,” Sol. Energy 79(1), 78–85 (2005).
[Crossref]

Arimochi, M.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Asaka, N.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

Bajgar, C.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Bertness, K. A.

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

Bian, L.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

Bian, L. F.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

Boca, A.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Cho, B.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Chumney, D.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Clevenger, M. B.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Cornfeld, A.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Dai, P.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Dunlop, E. D.

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Edmondson, K. M.

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Ekins-Daukes, N.

M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins-Daukes, “Multi-junction III-V solar cells: current status and future potential,” Sol. Energy 79(1), 78–85 (2005).
[Crossref]

Emery, K.

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Emery, K. A.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Ernst, P.

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

Fatemi, N.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Fetzer, C. M.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Frenzen, C. L.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

Friedman, D. J.

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

D. J. Friedman, A. E. Kibbler, and J. M. Olson, “Cation site ordering and conduction electron scattering in GaInP2,” Appl. Phys. Lett. 59(23), 2998–3000 (1991).
[Crossref]

Galiana, B.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “A 32.6% efficient lattice matched dual-junction solar cell working at 1000 suns,” Appl. Phys. Lett. 94(5), 053509 (2009).
[Crossref]

García, I.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “A 32.6% efficient lattice matched dual-junction solar cell working at 1000 suns,” Appl. Phys. Lett. 94(5), 053509 (2009).
[Crossref]

Geng, C.

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

Green, M. A.

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Haapamaa, J.

W. Li, J. Likonen, J. Haapamaa, and M. Pessa, “Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy,” J. Appl. Phys. 87(10), 7592–7593 (2000).
[Crossref]

P. Leinonen, M. Pessa, J. Haapamaa, and K. Rakennus, “Advances in production MBE grown GaInP/GaAs cascade solar cells,” IEEE Xplore-Photovoltaic Specialists conference2000.

Haegel, N. M.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

Hahn, G.

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

He, W.

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Hishikawa, Y.

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Ho-Baillie, A. W. Y.

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Ikeda, E.

T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells,” Appl. Phys. Lett. 70(3), 381–383 (1997).
[Crossref]

Ikeda, M.

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

M. Ikeda and K. Kaneko, “Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)In0.5P grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 66(11), 5285–5289 (1989).
[Crossref]

Ishida, T.

T. Kato, T. Matsumoto, and T. Ishida, “Electrical properties of Zn-doped In1-xGaxP,” Jpn. J. Appl. Phys. 19(12), 2367–2375 (1980).
[Crossref]

Jalonen, M.

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

Ji, L.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Kam, C. H.

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

Kaneko, K.

M. Ikeda and K. Kaneko, “Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)In0.5P grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 66(11), 5285–5289 (1989).
[Crossref]

Karam, N. H.

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Kato, T.

T. Kato, T. Matsumoto, and T. Ishida, “Electrical properties of Zn-doped In1-xGaxP,” Jpn. J. Appl. Phys. 19(12), 2367–2375 (1980).
[Crossref]

Keshavarzi, A.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Kibbler, A. E.

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

D. J. Friedman, A. E. Kibbler, and J. M. Olson, “Cation site ordering and conduction electron scattering in GaInP2,” Appl. Phys. Lett. 59(23), 2998–3000 (1991).
[Crossref]

King, R. R.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Kinsey, G. S.

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Köngäs, J.

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

Kramer, C.

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

Kurita, H.

T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells,” Appl. Phys. Lett. 70(3), 381–383 (1997).
[Crossref]

Kurtz, S. R.

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

Law, D. C.

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Leinonen, P.

P. Leinonen, M. Pessa, J. Haapamaa, and K. Rakennus, “Advances in production MBE grown GaInP/GaAs cascade solar cells,” IEEE Xplore-Photovoltaic Specialists conference2000.

Levi, D. H.

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Li, W.

W. Li, J. Likonen, J. Haapamaa, and M. Pessa, “Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy,” J. Appl. Phys. 87(10), 7592–7593 (2000).
[Crossref]

Likonen, J.

W. Li, J. Likonen, J. Haapamaa, and M. Pessa, “Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy,” J. Appl. Phys. 87(10), 7592–7593 (2000).
[Crossref]

Lin, Y.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Lu, S.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Lu, S. L.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

Lundstrom, M.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Mascarenhas, A.

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

Matsumoto, T.

T. Kato, T. Matsumoto, and T. Ishida, “Electrical properties of Zn-doped In1-xGaxP,” Jpn. J. Appl. Phys. 19(12), 2367–2375 (1980).
[Crossref]

McCarty, J.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Melloch, M. R.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Mills, T. J.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

Newman, F.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Ohmori, M.

T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells,” Appl. Phys. Lett. 70(3), 381–383 (1997).
[Crossref]

Olson, J. M.

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

D. J. Friedman, A. E. Kibbler, and J. M. Olson, “Cation site ordering and conduction electron scattering in GaInP2,” Appl. Phys. Lett. 59(23), 2998–3000 (1991).
[Crossref]

Orsila, S.

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

Pan, D.

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

Patel, P.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Pessa, M.

W. Li, J. Likonen, J. Haapamaa, and M. Pessa, “Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy,” J. Appl. Phys. 87(10), 7592–7593 (2000).
[Crossref]

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

P. Leinonen, M. Pessa, J. Haapamaa, and K. Rakennus, “Advances in production MBE grown GaInP/GaAs cascade solar cells,” IEEE Xplore-Photovoltaic Specialists conference2000.

Phillipp, F.

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

Rakennus, K.

P. Leinonen, M. Pessa, J. Haapamaa, and K. Rakennus, “Advances in production MBE grown GaInP/GaAs cascade solar cells,” IEEE Xplore-Photovoltaic Specialists conference2000.

Rey-Stolle, I.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “A 32.6% efficient lattice matched dual-junction solar cell working at 1000 suns,” Appl. Phys. Lett. 94(5), 053509 (2009).
[Crossref]

Savolainen, P.

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

Scandrett, C.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

Scholz, F.

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

Schweizer, H.

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

Sharps, P.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Sherif, R. A.

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Shi, W.

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

Spann, J.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Stan, M.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Steinfeldt, J.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Stellwag, T. B.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Strautin, C.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Tackeuchi, A.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

Takamoto, T.

M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins-Daukes, “Multi-junction III-V solar cells: current status and future potential,” Sol. Energy 79(1), 78–85 (2005).
[Crossref]

T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells,” Appl. Phys. Lett. 70(3), 381–383 (1997).
[Crossref]

Talmadge, M.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

Tan, M.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

Tobin, S. P.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Toivonen, M.

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

Uchida, S.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Uemura, M.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

Varghese, T.

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

Venkatensan, S.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Vernon, S. M.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Wang, X. Z.

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

Warta, W.

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Watanabe, T.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

Wojtczuk, S.

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

Wu, Y.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

Wu, Y. Y.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

Yamaguchi, M.

M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins-Daukes, “Multi-junction III-V solar cells: current status and future potential,” Sol. Energy 79(1), 78–85 (2005).
[Crossref]

Yan, H.

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

Yang, H.

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Yoon, H.

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

Yoon, S. F.

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

Yoshida, H.

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Zhang, D. H.

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

Zheng, H. Q.

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

Zhu, Y. Q.

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

Appl. Phys. Express (1)

P. Dai, S. L. Lu, S. Uchida, L. Ji, Y. Y. Wu, M. Tan, L. F. Bian, and H. Yang, “Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy,” Appl. Phys. Express 9(1), 016501 (2016).
[Crossref]

Appl. Phys. Lett. (5)

K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, “29.5%-efficient GaInP/GaAs tandem solar cells,” Appl. Phys. Lett. 65(8), 989–991 (1994).
[Crossref]

R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells,” Appl. Phys. Lett. 90(18), 183516 (2007).
[Crossref]

T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells,” Appl. Phys. Lett. 70(3), 381–383 (1997).
[Crossref]

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “A 32.6% efficient lattice matched dual-junction solar cell working at 1000 suns,” Appl. Phys. Lett. 94(5), 053509 (2009).
[Crossref]

D. J. Friedman, A. E. Kibbler, and J. M. Olson, “Cation site ordering and conduction electron scattering in GaInP2,” Appl. Phys. Lett. 59(23), 2998–3000 (1991).
[Crossref]

IEEE J. Photovolt. (1)

P. Patel, D. Aiken, A. Boca, B. Cho, D. Chumney, M. B. Clevenger, A. Cornfeld, N. Fatemi, Y. Lin, J. McCarty, F. Newman, P. Sharps, J. Spann, M. Stan, J. Steinfeldt, C. Strautin, and T. Varghese, “Experimental Results From Performance Improvement and radiation hardening of inverted metamorphic multijunction solar cells,” IEEE J. Photovolt. 2(3), 377–381 (2012).
[Crossref]

IEEE Tran. Elec. Device (1)

S. P. Tobin, S. M. Vernon, C. Bajgar, S. Wojtczuk, M. R. Melloch, A. Keshavarzi, T. B. Stellwag, S. Venkatensan, M. Lundstrom, and K. A. Emery, “Assessment of MOCVD- and MBE-grown GaAs for high-efficiency solar cell applications,” IEEE Tran. Elec. Device 37(2), 469–477 (1990).
[Crossref]

J. Appl. Phys. (4)

M. Ikeda and K. Kaneko, “Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)In0.5P grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 66(11), 5285–5289 (1989).
[Crossref]

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, and R. R. King, “Direct image of anisotropic minority-carrier diffusion in ordered GaInP,” J. Appl. Phys. 105(2), 023711 (2009).
[Crossref]

P. Ernst, C. Geng, G. Hahn, F. Scholz, H. Schweizer, F. Phillipp, and A. Mascarenhas, “Influence of domain size on optical properties of ordered GaInP2,” J. Appl. Phys. 79(5), 2633–2639 (1996).
[Crossref]

W. Li, J. Likonen, J. Haapamaa, and M. Pessa, “Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy,” J. Appl. Phys. 87(10), 7592–7593 (2000).
[Crossref]

J. Cryst. Growth (3)

S. Orsila, J. Köngäs, M. Toivonen, P. Savolainen, M. Jalonen, and M. Pessa, “Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes,” J. Cryst. Growth 201–202(3), 985–989 (1999).
[Crossref]

P. Dai, S. L. Lu, Y. Q. Zhu, L. Ji, W. He, M. Tan, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “The investigation of GaInP solar cell grown by all-solid MBE,” J. Cryst. Growth 378, 604–606 (2013).
[Crossref]

D. H. Zhang, W. Shi, H. Q. Zheng, S. F. Yoon, C. H. Kam, and X. Z. Wang, “Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell,” J. Cryst. Growth 211(1–4), 384–388 (2000).
[Crossref]

J. Semiconductors (1)

D. Pan, S. Lu, L. Ji, W. He, L. Bian, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy,” J. Semiconductors 34(10), 104006 (2013).
[Crossref]

Jpn. J. Appl. Phys. (1)

T. Kato, T. Matsumoto, and T. Ishida, “Electrical properties of Zn-doped In1-xGaxP,” Jpn. J. Appl. Phys. 19(12), 2367–2375 (1980).
[Crossref]

Nanoscale Res. Lett. (1)

S. Lu, L. Ji, W. He, P. Dai, H. Yang, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda, “High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy,” Nanoscale Res. Lett. 6(1), 576 (2011).
[Crossref] [PubMed]

Prog. Photovolt. Res. Appl. (1)

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, “Solar cell efficiency tables (version49),” Prog. Photovolt. Res. Appl. 25(1), 3–13 (2017).
[Crossref]

Sol. Energy (1)

M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins-Daukes, “Multi-junction III-V solar cells: current status and future potential,” Sol. Energy 79(1), 78–85 (2005).
[Crossref]

Sol. Energy Mater. Sol. Cells (1)

L. Ji, S. Lu, Y. Wu, P. Dai, L. Bian, M. Arimochi, T. Watanabe, N. Asaka, M. Uemura, A. Tackeuchi, S. Uchida, and H. Yan, “Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,” Sol. Energy Mater. Sol. Cells 127, 1–5 (2014).
[Crossref]

Other (1)

P. Leinonen, M. Pessa, J. Haapamaa, and K. Rakennus, “Advances in production MBE grown GaInP/GaAs cascade solar cells,” IEEE Xplore-Photovoltaic Specialists conference2000.

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Figures (6)

Fig. 1
Fig. 1 (a) Room-temperature hole mobility as a function of carrier concentration for Be doped GaInP by MBE growth and Zn-doped Ga0.5In0.5P by MOCVD growth; (b) room temperature TRPL spectra of the materials for different growth temperature, which are sample A at high Tg and sample B at low Tg. The inset shows (004) XRD ω/2θ scans of sample A and B.
Fig. 2
Fig. 2 (a) Hall mobility and (b) carrier concentration as a function of temperature for samples with different Tg.
Fig. 3
Fig. 3 The temperature-dependent PL for samples B (a) and C (b). The inset shows the excitation power dependent PL spectra of sample B at 3 K.
Fig. 4
Fig. 4 The temperature-dependent PL measurement of samples A (a) and D (b).
Fig. 5
Fig. 5 TRPL spectra for samples A (a) and B (b), the inset shows the PL decay curves for different emission peaks.
Fig. 6
Fig. 6 The calculated band diagram of GaInP/GaAs heterinterface.

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