Abstract

High-sensitivity, rapid response β-Ga2O3 film-based metal-semiconductor-metal (MSM) solar-blind photodetectors were obtained by replacing conventional Au/Ti electrodes with single-layer graphene (SLG) nanosheets. Compared with the photodetector with Au/Ti electrodes, the photodetector using SLG electrodes demonstrates enhanced deep ultraviolet photoresponse properties, including a more rapid response speed (0.078 s), a higher light-to-dark current ratio (~1.41 × 104%), a higher R254/R365 rejection ratio (~1020), and the larger detectivity (~6.29 × 1011 Jones). The integration of SLG with β-Ga2O3 offers a large transparent area to the incident photons, and narrows the barrier at the contact interface upon ultraviolet illumination, strongly suggesting an unlimited potential for deep ultraviolet optoelectronic devices.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga2O3 heterojunction

Mingzhu Chen, Jiangang Ma, Peng Li, Haiyang Xu, and Yichun Liu
Opt. Express 27(6) 8717-8726 (2019)

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

Xuanhu Chen, Fangfang Ren, Shulin Gu, and Jiandong Ye
Photon. Res. 7(4) 381-415 (2019)

Visible blind ultraviolet photodetector based on CH3NH3PbCl3 thin film

Wenzhen Wang, Haitao Xu, Jiang Cai, Jiabin Zhu, Chaowei Ni, Feng Hong, Zebo Fang, Fuzong Xu, Siwei Cui, Run Xu, Linjun Wang, Fei Xu, and Jian Huang
Opt. Express 24(8) 8411-8419 (2016)

References

  • View by:
  • |
  • |
  • |

  1. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
    [Crossref]
  2. Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
    [Crossref] [PubMed]
  3. P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
    [Crossref]
  4. R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
    [Crossref]
  5. P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
    [Crossref]
  6. D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
    [Crossref]
  7. Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
    [Crossref]
  8. R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
    [Crossref]
  9. W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
    [Crossref] [PubMed]
  10. R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
    [Crossref] [PubMed]
  11. W. Zheng, R. C. Lin, L. M. Jia, and F. Huang, “Vacuum ultraviolet photovoltaic arrays,” Photon. Res. 7(1), 98–102 (2019).
    [Crossref]
  12. W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
    [Crossref]
  13. Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
    [Crossref]
  14. C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
    [Crossref]
  15. A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
    [Crossref]
  16. W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
    [Crossref] [PubMed]
  17. S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
    [Crossref]
  18. S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
    [Crossref]
  19. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
    [Crossref] [PubMed]
  20. A. K. Geim, “Graphene: status and prospects,” Science 324(5934), 1530–1534 (2009).
    [Crossref] [PubMed]
  21. M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
    [Crossref]
  22. H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
    [Crossref]
  23. H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
    [Crossref]
  24. Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
    [Crossref]
  25. M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
    [Crossref]
  26. S. Chaitoglou and E. Bertran, “Effect of temperature on graphene grown by chemical vapor deposition,” J. Mater. Sci. 52(13), 8348–8356 (2017).
    [Crossref]
  27. N. Ferralis, “Probing mechanical properties of graphene with Raman spectroscopy,” J. Mater. Sci. 45(19), 5135–5149 (2010).
    [Crossref]
  28. S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
    [Crossref]
  29. M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
    [Crossref]
  30. X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
    [Crossref] [PubMed]
  31. N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
    [Crossref]
  32. N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
    [Crossref]
  33. S. Oh, C. K. Kim, and J. Kim, “High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes,” ACS Photonics 5(3), 1123–1128 (2017).
    [Crossref]
  34. B. D. Boruah, A. Mukherjee, and A. Misra, “Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector,” Nanotechnology 27(9), 095205 (2016).
    [Crossref] [PubMed]
  35. S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
    [Crossref]
  36. C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
    [Crossref] [PubMed]
  37. H. K. Park and J. Choi, “High Responsivity and Detectivity Graphene-Silicon Majority Carrier Tunneling Photodiodes with a Thin Native Oxide Layer,” ACS Photonics 5(7), 2895–2903 (2018).
    [Crossref]
  38. D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
    [Crossref]
  39. Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
    [Crossref]

2019 (1)

2018 (8)

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

H. K. Park and J. Choi, “High Responsivity and Detectivity Graphene-Silicon Majority Carrier Tunneling Photodiodes with a Thin Native Oxide Layer,” ACS Photonics 5(7), 2895–2903 (2018).
[Crossref]

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

2017 (8)

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

S. Oh, C. K. Kim, and J. Kim, “High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes,” ACS Photonics 5(3), 1123–1128 (2017).
[Crossref]

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

S. Chaitoglou and E. Bertran, “Effect of temperature on graphene grown by chemical vapor deposition,” J. Mater. Sci. 52(13), 8348–8356 (2017).
[Crossref]

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

2016 (5)

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
[Crossref]

B. D. Boruah, A. Mukherjee, and A. Misra, “Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector,” Nanotechnology 27(9), 095205 (2016).
[Crossref] [PubMed]

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

2015 (1)

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

2014 (3)

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

2013 (3)

M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
[Crossref]

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

2012 (2)

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

2011 (1)

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

2010 (2)

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

N. Ferralis, “Probing mechanical properties of graphene with Raman spectroscopy,” J. Mater. Sci. 45(19), 5135–5149 (2010).
[Crossref]

2009 (3)

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

A. K. Geim, “Graphene: status and prospects,” Science 324(5934), 1530–1534 (2009).
[Crossref] [PubMed]

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

2008 (1)

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

2006 (1)

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Aggarwal, N.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Ago, H.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Ahn, J. H.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Ai, M. L.

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

Amirmazlaghani, M.

M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
[Crossref]

An, Y. H.

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

Anand, K.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Arai, N.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Aziz, A.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Barvat, A.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Bertran, E.

S. Chaitoglou and E. Bertran, “Effect of temperature on graphene grown by chemical vapor deposition,” J. Mater. Sci. 52(13), 8348–8356 (2017).
[Crossref]

Bissett, M. A.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Boruah, B. D.

B. D. Boruah, A. Mukherjee, and A. Misra, “Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector,” Nanotechnology 27(9), 095205 (2016).
[Crossref] [PubMed]

Chabal, Y. J.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Chai, S. P.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Chaitoglou, S.

S. Chaitoglou and E. Bertran, “Effect of temperature on graphene grown by chemical vapor deposition,” J. Mater. Sci. 52(13), 8348–8356 (2017).
[Crossref]

Chang, S. J.

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

Chen, K.

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Chen, Y. C.

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Chen, Y. P.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Chen, Z. W.

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Cheng, F.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Cheng, T. C.

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

Cho, H.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Cho, K.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Choi, J.

H. K. Park and J. Choi, “High Responsivity and Detectivity Graphene-Silicon Majority Carrier Tunneling Photodiodes with a Thin Native Oxide Layer,” ACS Photonics 5(7), 2895–2903 (2018).
[Crossref]

Choi, J. Y.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Chu, X. L.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Cui, W.

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

Ding, S. J.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Dong, L.

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Du, G. T.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Fang, G. J.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Feng, P.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Ferralis, N.

N. Ferralis, “Probing mechanical properties of graphene with Raman spectroscopy,” J. Mater. Sci. 45(19), 5135–5149 (2010).
[Crossref]

Fornari, R.

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

Fromm, F.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Galazka, Z.

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

Gao, C. J.

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Geim, A. K.

A. K. Geim, “Graphene: status and prospects,” Science 324(5934), 1530–1534 (2009).
[Crossref] [PubMed]

Gong, C.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Gu, C. J.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Guo, D.

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

Guo, D. Y.

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Guo, X. C.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

Gupta, G.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Gupta, V.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Habibpour, O.

M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
[Crossref]

Hashim, U.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Hidayah, N. M. S.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Higashiwaki, M.

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
[Crossref]

Hinojos, D.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Hong, B. H.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Hsueh, H. T.

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

Huan, Y. W.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Huang, F.

W. Zheng, R. C. Lin, L. M. Jia, and F. Huang, “Vacuum ultraviolet photovoltaic arrays,” Photon. Res. 7(1), 98–102 (2019).
[Crossref]

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Husale, S.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Irmscher, K.

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

Jain, S. K.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Jang, H.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Janowitz, C.

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

Ji, X.

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

Jia, L. M.

W. Zheng, R. C. Lin, L. M. Jia, and F. Huang, “Vacuum ultraviolet photovoltaic arrays,” Photon. Res. 7(1), 98–102 (2019).
[Crossref]

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

Jiao, L.

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Juan, Y. M.

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

Jung, H. S.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Kang, C. J.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Kawahara, K.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Khanna, S. P.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Khe, C. S.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Kim, C. K.

S. Oh, C. K. Kim, and J. Kim, “High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes,” ACS Photonics 5(3), 1123–1128 (2017).
[Crossref]

Kim, J.

S. Oh, C. K. Kim, and J. Kim, “High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes,” ACS Photonics 5(3), 1123–1128 (2017).
[Crossref]

S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
[Crossref]

S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
[Crossref]

Kim, J. M.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Kim, K. S.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Kim, P.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Koch, R. J.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Kokubun, Y.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Komatsu, K.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Kong, W. Y.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Krishna, S.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Krishnamoorthy, S.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

Kumar, G.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Kumar, P.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Kumar, R.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Kumar, S. S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Kuramata, A.

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
[Crossref]

Lee, H. C.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Lee, J. S.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Lee, S. Y.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Li, L.

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

Li, L. H.

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Li, P. G.

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

Li, Q. H.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Li, W. H.

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Liang, H. W.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Liao, Q.

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

Lin, C. N.

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Lin, R.

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

Lin, R. C.

W. Zheng, R. C. Lin, L. M. Jia, and F. Huang, “Vacuum ultraviolet photovoltaic arrays,” Photon. Res. 7(1), 98–102 (2019).
[Crossref]

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

Liu, H.

Liu, N. S.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Liu, W. J.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Liu, W. W.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Lu, Y. J.

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Luo, L. B.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Luo, Y. M.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Manandhar, S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Manzke, R.

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

Martinez, G.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Masui, T.

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
[Crossref]

Min, K. J.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Misra, A.

B. D. Boruah, A. Mukherjee, and A. Misra, “Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector,” Nanotechnology 27(9), 095205 (2016).
[Crossref] [PubMed]

Mohamed, A. R.

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Mohamed, M.

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

Mukherjee, A.

B. D. Boruah, A. Mukherjee, and A. Misra, “Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector,” Nanotechnology 27(9), 095205 (2016).
[Crossref] [PubMed]

Muralidharan, R.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

Nakagomi, S.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Nath, D. N.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

Nijem, N.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Noor-A-Alam, M.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Ogawa, Y.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Oh, S.

S. Oh, C. K. Kim, and J. Kim, “High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes,” ACS Photonics 5(3), 1123–1128 (2017).
[Crossref]

S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
[Crossref]

Ohira, S.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Pal, P.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Park, H. K.

H. K. Park and J. Choi, “High Responsivity and Detectivity Graphene-Silicon Majority Carrier Tunneling Photodiodes with a Thin Native Oxide Layer,” ACS Photonics 5(7), 2895–2903 (2018).
[Crossref]

Pearton, S. J.

S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
[Crossref]

Prakash, N.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Qu, Y. Y.

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

Raissi, F.

M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
[Crossref]

Rajan, S.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

Ramana, C. V.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Ran, J.

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

Ren, F.

S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
[Crossref]

Rubio, E. J.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Sakaguchi, H.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Sasaki, K.

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
[Crossref]

Seyller, T.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Shan, B.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Shan, C. X.

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Shen, R. S.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Shi, H. Z.

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Shutthanandan, V.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Singh, M.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Singh, R. K.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Singh, S. P.

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

Singh Pratiyush, A.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

Son, S. Y.

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

Stake, J.

M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
[Crossref]

Sun, C. L.

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

Sun, S. M.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Suzuki, R.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

Tang, W.

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

Tang, W. H.

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

Tanoue, S.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Tao, P. C.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Thevuthasan, S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Tian, Y. Z.

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

Tsuji, M.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Tsukagoshi, K.

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Vishnu Solanke, S.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

Vukusic, J.

M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
[Crossref]

Wallace, R. M.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Wang, D. D.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Wang, G. F.

Wang, K. Y.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Wang, S. H.

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

Wang, S. L.

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Wang, T. H.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Wang, W.

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

Wang, X. L.

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Weng, W. Y.

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

Wu, C. L.

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

Wu, G. A.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Wu, Z.

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

Wu, Z. P.

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Xia, C. T.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Xia, X. C.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Xia, Z. B.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

Yamakoshi, S.

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
[Crossref]

Yan, H.

Yang, C.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Yang, H. J.

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

Yang, L.

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

Yu, H. Y.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Yuan, L. Y.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zeng, W.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhang, D.

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

Zhang, D. W.

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Zhang, H. Q.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Zhang, J. Y.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Zhang, T. F.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Zhang, Z.

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

Zhang, Z. Z.

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Zhao, X.

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

Zhao, X. Z.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhao, Y.

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Zheng, Q.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zheng, W.

W. Zheng, R. C. Lin, L. M. Jia, and F. Huang, “Vacuum ultraviolet photovoltaic arrays,” Photon. Res. 7(1), 98–102 (2019).
[Crossref]

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

Zhi, Y.

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

Zhi, Y. S.

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Zhou, H.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zou, X.

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zou, Y. F.

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

ACS Appl. Mater. Interfaces (3)

R. Lin, W. Zheng, D. Zhang, Z. Zhang, Q. Liao, L. Yang, and F. Huang, “High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,” ACS Appl. Mater. Interfaces 10(26), 22419–22426 (2018).
[Crossref] [PubMed]

X. Zhao, Z. Wu, W. Cui, Y. Zhi, D. Guo, L. Li, and W. Tang, “Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films,” ACS Appl. Mater. Interfaces 9(1), 983–988 (2017).
[Crossref] [PubMed]

N. S. Liu, G. J. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Y. Yuan, X. Zou, and X. Z. Zhao, “Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

ACS Nano (2)

C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, “Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control,” ACS Nano 6(6), 5381–5387 (2012).
[Crossref] [PubMed]

W. Zheng, R. Lin, J. Ran, Z. Zhang, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector,” ACS Nano 12(1), 425–431 (2018).
[Crossref] [PubMed]

ACS Photonics (2)

H. K. Park and J. Choi, “High Responsivity and Detectivity Graphene-Silicon Majority Carrier Tunneling Photodiodes with a Thin Native Oxide Layer,” ACS Photonics 5(7), 2895–2903 (2018).
[Crossref]

S. Oh, C. K. Kim, and J. Kim, “High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes,” ACS Photonics 5(3), 1123–1128 (2017).
[Crossref]

Adv. Mater. (1)

W. Y. Kong, G. A. Wu, K. Y. Wang, T. F. Zhang, Y. F. Zou, D. D. Wang, and L. B. Luo, “Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,” Adv. Mater. 28(48), 10725–10731 (2016).
[Crossref] [PubMed]

Adv. Opt. Mater. (1)

W. Zheng, R. C. Lin, D. Zhang, L. M. Jia, X. Ji, and F. Huang, “Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism,” Adv. Opt. Mater. 6(21), 1800697 (2018).
[Crossref]

Appl. Phys. Express (1)

H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi, “Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film,” Appl. Phys. Express 6(7), 075101 (2013).
[Crossref]

Appl. Phys. Lett. (7)

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. B. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal, S. P. Singh, and S. P. Khanna, “Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes,” Appl. Phys. Lett. 109(24), 242102 (2016).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R. Fornari, “Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3,” Appl. Phys. Lett. 101(13), 132106 (2012).
[Crossref]

Electrochem. Solid-State Lett. (1)

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, and R. K. Singh, “An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications,” Electrochem. Solid-State Lett. 11(4), H81–H83 (2008).
[Crossref]

IEEE J. Quantum Electron. (1)

M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR Detector,” IEEE J. Quantum Electron. 49(7), 589–594 (2013).
[Crossref]

J. Alloys Compd. (2)

Y. Y. Qu, Z. P. Wu, M. L. Ai, D. Y. Guo, Y. H. An, H. J. Yang, L. H. Li, and W. H. Tang, “Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes,” J. Alloys Compd. 680, 247–251 (2016).
[Crossref]

M. L. Ai, D. Y. Guo, Y. Y. Qu, W. Cui, Z. P. Wu, P. G. Li, L. H. Li, and W. H. Tang, “Fast-response solar-blind ultraviolet photodetector with a graphene/ β-Ga2O3/graphene hybrid structure,” J. Alloys Compd. 692, 634–638 (2017).
[Crossref]

J. Mater. Chem. C Mater. Opt. Electron. Devices (4)

P. G. Li, H. Z. Shi, K. Chen, D. Y. Guo, W. Cui, Y. S. Zhi, S. L. Wang, Z. P. Wu, Z. W. Chen, and W. H. Tang, “Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(40), 10562–10570 (2017).
[Crossref]

Z. P. Wu, L. Jiao, X. L. Wang, D. Y. Guo, W. H. Li, L. H. Li, F. Huang, and W. H. Tang, “A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction,” J. Mater. Chem. C Mater. Opt. Electron. Devices 5(34), 8688–8693 (2017).
[Crossref]

Y. C. Chen, Y. J. Lu, C. N. Lin, Y. Z. Tian, C. J. Gao, L. Dong, and C. X. Shan, “Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(21), 5727–5732 (2018).
[Crossref]

S. Oh, J. Kim, F. Ren, S. J. Pearton, and J. Kim, “Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(39), 9245–9250 (2016).
[Crossref]

J. Mater. Sci. (2)

S. Chaitoglou and E. Bertran, “Effect of temperature on graphene grown by chemical vapor deposition,” J. Mater. Sci. 52(13), 8348–8356 (2017).
[Crossref]

N. Ferralis, “Probing mechanical properties of graphene with Raman spectroscopy,” J. Mater. Sci. 45(19), 5135–5149 (2010).
[Crossref]

J. Mater. Sci. Mater. Electron. (1)

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci. Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

J. Phys. Chem. C (1)

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Nanoscale Res. Lett. (1)

Y. W. Huan, S. M. Sun, C. J. Gu, W. J. Liu, S. J. Ding, H. Y. Yu, C. T. Xia, and D. W. Zhang, “Recent Advances in β-Ga2O3-Metal Contacts,” Nanoscale Res. Lett. 13(1), 246 (2018).
[Crossref] [PubMed]

Nanotechnology (1)

B. D. Boruah, A. Mukherjee, and A. Misra, “Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector,” Nanotechnology 27(9), 095205 (2016).
[Crossref] [PubMed]

Nature (1)

K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature 457(7230), 706–710 (2009).
[Crossref] [PubMed]

Opt. Mater. Express (1)

Photon. Res. (1)

Phys. Status Solidi., A Appl. Mater. Sci. (1)

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Status Solidi., A Appl. Mater. Sci. 211(1), 21–26 (2014).
[Crossref]

RSC Advances (3)

C. Yang, H. W. Liang, Z. Z. Zhang, X. C. Xia, P. C. Tao, Y. P. Chen, H. Q. Zhang, R. S. Shen, Y. M. Luo, and G. T. Du, “Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3,” RSC Advances 8(12), 6341–6345 (2018).
[Crossref]

Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, W. Y. Weng, T. C. Cheng, and C. L. Wu, “Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor,” RSC Advances 5(103), 84776–84781 (2015).
[Crossref]

H. C. Lee, W. W. Liu, S. P. Chai, A. R. Mohamed, A. Aziz, C. S. Khe, N. M. S. Hidayah, and U. Hashim, “Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene,” RSC Advances 7(26), 15644–15693 (2017).
[Crossref]

Science (1)

A. K. Geim, “Graphene: status and prospects,” Science 324(5934), 1530–1534 (2009).
[Crossref] [PubMed]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1 Schematic diagram of the β-Ga2O3 wafer with SLG and Au/Ti electrodes, together with the optical microscopy image of electrode/β-Ga2O3/electrode hybrid structure.
Fig. 2
Fig. 2 (a) Raman spectrum of the SLG. (b) XRD pattern of the β-Ga2O3 thin film. (c) UV-vis absorbance spectrum of the β-Ga2O3 thin film with the plot of (αhν)2 versus hν for the sample in inset.
Fig. 3
Fig. 3 I-V characteristics curves on a linear scale toward the β-Ga2O3 photodetectors in dark and under (200μW/cm2) 365 nm and (200μW/cm2) 254nm light illumination: (a) The devices with Au/Ti-Au/Ti electrodes, SLG-Au/Ti electrodes and SLG-SLG electrodes, respectively. I-V characteristics curves on a logarithmic scale toward the β-Ga2O3 photodetectors in dark and under (200μW/cm2) 365 nm and (200μW/cm2) 254nm light illumination: (b) The devices with Au/Ti-Au/Ti electrodes, SLG-Au/Ti electrodes and SLG-SLG electrodes, respectively.
Fig. 4
Fig. 4 Time-dependent photoresponse of the β-Ga2O3 thin films photodetectors to 254nm light illumination curves on a logarithmic scale: (a) The devices with Au/Ti-Au/Ti electrodes, SLG-Au/Ti electrodes and SLG-SLG electrodes, respectively. Enlarged view of the rise/decay edges and the corresponding exponential fitting curves on a linear scale: (b) The devices with Au/Ti-Au/Ti electrodes, SLG-Au/Ti electrodes and SLG-SLG electrodes, respectively.
Fig. 5
Fig. 5 The detectivity of the β-Ga2O3 thin films photodetector under light illumination with diverse intensities: The photodetectors with Au/Ti-Au/Ti electrodes, SLG-Au/Ti electrodes and SLG-SLG electrodes, respectively.
Fig. 6
Fig. 6 Schematic energy band diagram of the electrode/β-Ga2O3 heterojunction at forward bias voltage: (a) The photodetector with SLG electrodes in dark conditions; (b) The photodetector with SLG electrodes under UV illumination; (c) The photodetector with Au/Ti electrodes in dark conditions; (d) The photodetector with Au/Ti electrodes under UV illumination.

Tables (1)

Tables Icon

Table 1 Summary of the key photoresponse parameters of the solar-blind PDs fabricated using β-Ga2O3 thin films.

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

I= I 0 + Ae t/ τ 1 + Be t/ τ 2 ,
D * = R S 1/2 ( 2e I dark ) 1/2 = I light P λ ( 2eS I dark ) 1/2 .

Metrics