Abstract

We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy. This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide. A specially designed 3D substrate surface shape leads to a step-like indium content profile, with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%. Thanks to this approach, we were able to increase the width of the spectrum in processed devices from 2.6 nm (reference diode) to 15.5 nm.

© 2017 Chinese Laser Press

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Corrections

Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, and Piotr Perlin, "InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note," Photon. Res. 6, 652-652 (2018)
https://www.osapublishing.org/prj/abstract.cfm?uri=prj-6-6-652

17 May 2018: A typographical correction was made to the funding section.


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References

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  1. C. F. Lin and B. L. Lee, “Extremely broadband AlGaAs/GaAs superluminescent diodes,” Appl. Phys. Lett. 71, 1598–1600 (1997).
    [Crossref]
  2. Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
    [Crossref]
  3. Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
    [Crossref]
  4. L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
    [Crossref]
  5. M. Z. M. Khan, M. A. Majid, T. K. Ng, D. Cha, and B. S. Ooi, “Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700  nm,” Opt. Lett. 38, 3720–3723 (2013).
    [Crossref]
  6. S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
    [Crossref]
  7. E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
    [Crossref]
  8. M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  12. C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41, 2608–2611 (2016).
    [Crossref]
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    [Crossref]
  14. A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
    [Crossref]
  15. M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
    [Crossref]
  16. S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
    [Crossref]
  17. P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).
  18. A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
    [Crossref]

2016 (3)

2015 (2)

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

2013 (4)

M. Z. M. Khan, M. A. Majid, T. K. Ng, D. Cha, and B. S. Ooi, “Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700  nm,” Opt. Lett. 38, 3720–3723 (2013).
[Crossref]

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

2012 (1)

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

2010 (1)

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

2009 (2)

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

2005 (1)

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
[Crossref]

2004 (1)

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

1999 (1)

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

1997 (1)

C. F. Lin and B. L. Lee, “Extremely broadband AlGaAs/GaAs superluminescent diodes,” Appl. Phys. Lett. 71, 1598–1600 (1997).
[Crossref]

Alyamani, A. Y.

Bockowski, M.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

Bojarska, A.

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

Carlin, J.-F.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Carlinb, J.-F.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

Castiglia, A.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Cha, D.

Chen, S.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Childs, D.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Clarke, E.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Cosendey, G.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Czernecki, R.

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Czyszanowski, T.

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

DenBaars, S. P.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41, 2608–2611 (2016).
[Crossref]

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Ding, D.

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

Domagala, J. Z.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Dorsaz, J.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Drozdz, P. A.

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Duelk, M.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Eichler, C.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

El-Desouki, M. M.

Feltin, E.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Fiore, A.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
[Crossref]

Fujito, K.

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Gong, Q.

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

Goss, J.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

Grandjean, N.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Grzanka, E.

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Grzanka, S.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Hardy, M. T.

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Hogg, R.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Holc, K.

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

Hoss, C.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Hsu, P. S.

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Hugues, M.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Jin, P.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

Kafar, A.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

Kelchner, K. M.

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Kennedy, K.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Khachapuridze, A.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

Khan, M. Z. M.

Kopp, F.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Korona, K. P.

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Kucharski, R.

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

Laino, V.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Lee, B. L.

C. F. Lin and B. L. Lee, “Extremely broadband AlGaAs/GaAs superluminescent diodes,” Appl. Phys. Lett. 71, 1598–1600 (1997).
[Crossref]

Lell, A.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Leonard, J. T.

Leszczynski, M.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

Leszczyski, M.

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

Li, L. H.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
[Crossref]

Li, W.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Lin, C. F.

C. F. Lin and B. L. Lee, “Extremely broadband AlGaAs/GaAs superluminescent diodes,” Appl. Phys. Lett. 71, 1598–1600 (1997).
[Crossref]

Lin, Y. D.

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Liu, F. Q.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

Majid, M. A.

Makarowa, I.

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

Marona, L.

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Matuschek, N.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

Najda, S.

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

Najda, S. P.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

Nakamura, S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41, 2608–2611 (2016).
[Crossref]

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Ng, T. K.

Nowakowska-Siwinska, A.

Occhi, L.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
[Crossref]

Ohta, H.

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Ooi, B. S.

Orchard, J.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Oto, T.

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

Pawlowska, J.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

Perlin, P.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

Plesiewicz, J.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

Pourhashemi, A.

Rezzonico, R.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

Ristic, J.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Ross, I.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Rossetti, M.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
[Crossref]

Sarzynski, M.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Schwarz, U. T.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Shen, C.

Speck, J. S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41, 2608–2611 (2016).
[Crossref]

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

Staczyk, S.

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

Stanczyk, S.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

Staszczak, G.

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

Stojetz, B.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Strauss, U.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Sulmoni, L.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

Sun, Z. Z.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

Suski, T.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

Targowski, G.

A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate,” Opt. Express 24, 9673–9682 (2016).
[Crossref]

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

Tautz, S.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Velez, C.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
[Crossref]

Vélez, C.

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

Wada, O.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Wang, Z. G.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

Weig, T.

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Wisniewski, P.

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

Xu, B.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

Zhang, Z.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Zhang, Z. Y.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

Zhou, K.

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Zhou, W.

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

Appl. Phys. Express (3)

M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching,” Appl. Phys. Express 2, 121004 (2009).
[Crossref]

A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, and P. Perlin, “High-optical-power InGaN superluminescent diodes with “j-shape” waveguide,” Appl. Phys. Express 6, 092102 (2013).
[Crossref]

M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, and M. Leszczynski, “Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning,” Appl. Phys. Express 5, 021001 (2012).
[Crossref]

Appl. Phys. Lett. (3)

S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, and P. Perlin, “Graded-index separate confinement heterostructure InGaN laser diodes,” Appl. Phys. Lett. 103, 261107 (2013).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95, 081107 (2009).
[Crossref]

C. F. Lin and B. L. Lee, “Extremely broadband AlGaAs/GaAs superluminescent diodes,” Appl. Phys. Lett. 71, 1598–1600 (1997).
[Crossref]

Electron. Lett. (1)

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41, 41–43 (2005).
[Crossref]

IEEE Photon. Technol. Lett. (1)

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16, 27–29 (2004).
[Crossref]

J. Appl. Phys. (1)

K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, and P. Perlin, “Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures,” J. Appl. Phys. 108, 013110 (2010).
[Crossref]

Jpn. J. Appl. Phys. (1)

F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, and U. Strauss, “Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection,” Jpn. J. Appl. Phys. 52, 08JH07 (2013).
[Crossref]

Nanoscale Res. Lett. (1)

S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, and R. Hogg, “GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Res. Lett. 10, 340 (2015).
[Crossref]

Opt. Express (1)

Opt. Lett. (2)

Opt. Quantum Electron. (1)

Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, and Z. G. Wang, “Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum,” Opt. Quantum Electron. 31, 1235–1246 (1999).
[Crossref]

Phys. Status Solidi A (1)

A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, and P. Perlin, “Design and optimization of InGaN superluminescent diodes,” Phys. Status Solidi A 212, 997–1004 (2015).
[Crossref]

Proc. SPIE (1)

A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, and N. Grandjean, “GaN-based superluminescent diodes with long lifetime,” Proc. SPIE 9748, 97481V (2016).
[Crossref]

Other (1)

P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, and T. Suski, “Monolithic cyan—violet InGaN/GaN LED array,” Phys. Status Solidi A (to be published).

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Figures (9)

Fig. 1.
Fig. 1. Schemes of popular SLD waveguide geometries: (a) tilted facet, (b) tilted waveguide, (c) waveguide with an absorber section, and (d) bent waveguide (used in this study).
Fig. 2.
Fig. 2. Simulated changes in emission spectra shape resulting from light amplification in medium with a linear profile of indium.
Fig. 3.
Fig. 3. Example of a calculated emission spectrum of an SLD with a step-like indium content profile along the waveguide.
Fig. 4.
Fig. 4. Fabricated step vicinal angle profile. The inset presents a 3D scheme of the surface pattern.
Fig. 5.
Fig. 5. Scheme of the epitaxial structure design of the examined samples (indium content estimated for a non-patterned wafer).
Fig. 6.
Fig. 6. Microphotoluminescence maps of central emission wavelength measured for substrate areas with three types of patterns: (a) flat, (b) linear, and (c) step.
Fig. 7.
Fig. 7. Optical power versus current curves measured for all types of devices.
Fig. 8.
Fig. 8. Comparison of emission spectra measured for three types of SLDs: fabricated on a substrate with constant vicinal angle (flat), with a linear profile of vicinal angle (linear), and with a step-like profile (step). The measurement was performed under 250 mA of operating current.
Fig. 9.
Fig. 9. Evolution of the emission spectrum with applied current measured for SLD fabricated on a substrate with step-like indium content profile.

Equations (1)

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I n ( λ ) = I n 1 ( λ ) exp [ g n ( λ ) ( L / N ) ] + I sp , n ( λ ) ,

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